Research Profile

Karim Cherkaoui

Biography

Research Grants

 ProjectFunding
Body
Start DateEnd DateAward
EI - Epitaxial Nanostructured GaAs on Si for Next Generation ElectronicsEnterprise Irl01-JAN-0930-SEP-12€372,156.00

Publications

Book Chapters

 YearPublication
(2010)'Gate Stacks'
O. Engstrom, I.Z. Mitrovic, S. Hall, P.K. Hurley, K. Cherkaoui, S. Monaghan, H.D.B. Gottlob, M.C. Lemme (2010) 'Gate Stacks' In: Nanoscale CMOS Innovative Materials, Modeling and Characterization. 111 River Street, Hoboken, NJ, USA: John Wiley & Sons, Inc. [Details]

Peer Reviewed Journals

 YearPublication
(2008)'Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films'
Farrell RA, Petkov N, Cherkaoui K, Amenitsch H, Holmes JD, Hurley PK, Morris MA; (2008) 'Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films'. Chemphyschem, 9 (11):1524-1527 [DOI] [Details]
(2013)'Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors'
Miranda, E,Jimenez, D,Sune, J,O'Connor, E,Monaghan, S,Povey, I,Cherkaoui, K,Hurley, PK (2013) 'Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors'. Journal of Vacuum Science & Technology B, 31 [DOI] [Details]
(2013)'Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors'
Monaghan, S,O'Connor, E,Povey, IM,Sheehan, BJ,Cherkaoui, K,Hutchinson, BJA,Hurley, PK,Ferdousi, F,Rios, R,Kuhn, KJ,Rahman, A (2013) 'Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors'. Journal of Vacuum Science & Technology B, 31 [DOI] [Details]
(2012)'Impact of Forming Gas Annealing on the Performance of Surface-Channel In0.53Ga0.47As MOSFETs With an ALD Al2O3 Gate Dielectric'
Djara, V,Cherkaoui, K,Schmidt, M,Monaghan, S,O'Connor, E,Povey, IM,O'Connell, D,Pemble, ME,Hurley, PK (2012) 'Impact of Forming Gas Annealing on the Performance of Surface-Channel In0.53Ga0.47As MOSFETs With an ALD Al2O3 Gate Dielectric'. IEEE Transactions On Electron Devices, 59 :1084-1090 [DOI] [Details]
(2012)'Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation'
Gity, F,Byun, KY,Lee, KH,Cherkaoui, K,Hayes, JM,Morrison, AP,Colinge, C,Corbett, B (2012) 'Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation'. Applied Physics Letters, 100 [DOI] [Details]
(2012)'Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates'
O'Connor, E,Cherkaoui, K,Monaghan, S,O'Connell, D,Povey, I,Casey, P,Newcomb, SB,Gomeniuk, YY,Provenzano, G,Crupi, F,Hughes, G,Hurley, PK (2012) 'Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates'. Journal of Applied Physics, 111 (12):124104-1-124104-7 [DOI] [Details]
(2012)'On the activation of implanted silicon ions in p-In0.53Ga0.47As'
Djara, V,Cherkaoui, K,Newcomb, SB,Thomas, K,Pelucchi, E,O'Connell, D,Floyd, L,Dimastrodonato, V,Mereni, LO,Hurley, PK (2012) 'On the activation of implanted silicon ions in p-In0.53Ga0.47As'. Semiconductor Science and Technology, 27 [DOI] [Details]
(2012)'Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011)'
Long, RD,Shin, B,Monaghan, S,Cherkaoui, K,Cagnon, J,Stemmer, S,McIntyre, PC,Hurley, PK (2012) 'Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011)'. Journal of the Electrochemical Society, 159 :17-17 [DOI] [Details]
(2011)'Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer'
Monaghan, S,O'Mahony, A,Cherkaoui, K,O'Connor, E,Povey, IM,Nolan, MG,O'Connell, D,Pemble, ME,Hurley, PK,Provenzano, G,Crupi, F,Newcomb, SB; (2011) 'Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer'. Journal of Vacuum Science & Technology B, 29 (1):01A8071-01A8078 [DOI] [Details]
(2011)'Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer'
Monaghan, S,O'Mahony, A,Cherkaoui, K,O'Connor, E,Povey, IM,Nolan, MG,O'Connell, D,Pemble, ME,Hurley, PK,Provenzano, G,Crupi, F,Newcomb, SB; (2011) 'Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer'. Journal of Vacuum Science & Technology B, 29 (1):01A8071-01A8078 [DOI] [Details]
(2011)'A systematic study of (NH4)(2)S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers'
O'Connor, E, Brennan, B, Djara, V, Cherkaoui, K, Monaghan, S, Newcomb, SB, Contreras, R, Milojevic, M, Hughes, G, Pemble, ME, Wallace, RM, Hurley, PK; (2011) 'A systematic study of (NH4)(2)S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers'. Journal of Applied Physics, 109 (2):024101-1-024101-10 [DOI] [Details]
(2011)'Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors'
Long, R. D., Shin, B., Monaghan, S., Cherkaoui, K., Cagnon, J., Stemmer, S., McIntyre, P. C., Hurley, P.K.; (2011) 'Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors'. Journal of the Electrochemical Society, 158 :103-107 [DOI] [Details]
(2011)'Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application'
Benedicto, M, Galiana, B, Molina-Aldareguia, JM, Monaghan, S, Hurley, PK, Cherkaoui, K, Vazquez, L, Tejedor, P; (2011) 'Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application'. Nanoscale Research Letters, 6 (400):1-6 [DOI] [Details]
(2011)'Transport and interface states in high-kappa LaSiOx dielectric'
Gomeniuk, YY,Gomeniuk, YV,Tyagulskii, IP,Tyagulskii, SI,Nazarov, AN,Lysenko, VS,Cherkaoui, K,Monaghan, S,Hurley, PK (2011) 'Transport and interface states in high-kappa LaSiOx dielectric'. Microelectronic Engineering, 88 :1342-1345 [DOI] [Details]
(2011)'Investigation of bulk defects in amorphous and crystalline HfO2 thin films'
Modreanu, M, Monaghan, S, Povey, IM, Cherkaoui, K, Hurley, PK, Androulidaki, M (2011) 'Investigation of bulk defects in amorphous and crystalline HfO2 thin films'. Microelectronic Engineering, 88 (7):1499-1502 [DOI] [Details]
(2011)'Investigation of bulk defects in amorphous and crystalline HfO2 thin films'
Modreanu, M, Monaghan, S, Povey, IM, Cherkaoui, K, Hurley, PK, Androulidaki, M (2011) 'Investigation of bulk defects in amorphous and crystalline HfO2 thin films'. Microelectronic Engineering, 88 (7):1499-1502 [DOI] [Details]
(2011)'Multi-technique characterisation of MOVPE-grown GaAs on Si'
Wong, CS,Bennett, NS,McNally, PJ,Galiana, B,Tejedor, P,Benedicto, M,Molina-Aldareguia, JM,Monaghan, S,Hurley, PK,Cherkaoui, K (2011) 'Multi-technique characterisation of MOVPE-grown GaAs on Si'. Microelectronic Engineering, 88 (4):472-475 [DOI] [Details]
(2010)'Electron energy band alignment at the (100)Si/MgO interface'
Afanas'ev, VV,Stesmans, A,Cherkaoui, K,Hurley, PK; (2010) 'Electron energy band alignment at the (100)Si/MgO interface'. Applied Physics Letters, 96 [DOI] [Details]
(2010)'Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer'
O'Mahony, A,Monaghan, S,Provenzano, G,Povey, IM,Nolan, MG,O'Connor, E,Cherkaoui, K,Newcomb, SB,Crupi, F,Hurley, PK,Pemble, ME; (2010) 'Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer'. Applied Physics Letters, 97 [DOI] [Details]
(2009)'Degradation Dynamics and Breakdown of MgO Gate Oxides'
Miranda, E, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK; (2009) 'Degradation Dynamics and Breakdown of MgO Gate Oxides'. Microelectronic Engineering, 86 (7-9):1715-1717 [DOI] [Details]
(2009)'Electrical Characterization of The Soft Breakdown Failure Mode In Mgo Layers'
Miranda, E, O'Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK, Hughes, G, Casey, P; (2009) 'Electrical Characterization of The Soft Breakdown Failure Mode In Mgo Layers'. Applied Physics Letters, 95 (1) [DOI] [Details]
(2009)'Leakage Current Effects On C-V Plots of High-K Metal-Oxide-Semiconductor Capacitors'
Lu, Y, Hall, S, Tan, LZ, Mitrovic, IZ, Davey, WM, Raeissi, B, Engstrom, O, Cherkaoui, K, Monaghan, S, Hurley, PK, Gottlob, HDB, Lemme, MC; (2009) 'Leakage Current Effects On C-V Plots of High-K Metal-Oxide-Semiconductor Capacitors'. Journal of Vacuum Science & Technology B, 27 (1):352-355 [DOI] [Details]
(2009)'Temperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods'
O'Connor, E, Monaghan, S, Long, RD, O'Mahony, A, Povey, IM, Cherkaoui, K, Pemble, ME, Brammertz, G, Heyns, M, Newcomb, SB, Afanas'ev, VV, Hurley, PK; (2009) 'Temperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods'. Applied Physics Letters, 94 (10) [DOI] [Details]
(2009)'TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors with Subnanometer CET using ALD-Deposited ZrO2 for DRAM Applications'
Monaghan, S, Cherkaoui, K, O'Connor, E, Djara, V, Hurley, PK, Oberbeck, L, Tois, E, Wilde, L, Teichert, S; (2009) 'TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors with Subnanometer CET using ALD-Deposited ZrO2 for DRAM Applications'. IEEE Electron Device Letters, 30 (3):219-221 [DOI] [Details]
(2009)'Analysis of Electron Mobility In Hfo2/Tin Gate Metal-Oxide-Semiconductor Field Effect Transistors: The Influence of Hfo2 Thickness, Temperature, and Oxide Charge'
Negara, MA, Cherkaoui, K, Hurley, PK, Young, CD, Majhi, P, Tsai, W, Bauza, D, Ghibaudo, G; (2009) 'Analysis of Electron Mobility In Hfo2/Tin Gate Metal-Oxide-Semiconductor Field Effect Transistors: The Influence of Hfo2 Thickness, Temperature, and Oxide Charge'. Journal of Applied Physics, 105 (2) [DOI] [Details]
(2009)'Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures'
Monaghan, S, Hurley, PK, Cherkaoui, K, Negara, MA, Schenk, A; (2009) 'Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures'. Solid-State Electronics, 53 (4):438-444 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge'
Negara, MA,Cherkaoui, K,Hurley, PK,Young, CD,Majhi, P,Tsai, W,Bauza, D,Ghibaudo, G; (2009) 'Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge'. Journal of Applied Physics, 105 [DOI] [Details]
(2009)'TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications'
Monaghan, S,Cherkaoui, K,O'Connor, E,Djara, V,Hurley, PK,Oberbeck, L,Tois, E,Wilde, L,Teichert, S; (2009) 'TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications'. IEEE Electron Device Letters, 30 :219-221 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2008)'High-K-Oxide/Silicon Interfaces Characterized By Capacitance Frequency Spectroscopy'
Raeissi, B, Piscator, J, Engstrom, O, Hall, S, Buiu, O, Lemme, MC, Gottlob, HDB, Hurley, PK, Cherkaoui, K, Osten, HJ; (2008) 'High-K-Oxide/Silicon Interfaces Characterized By Capacitance Frequency Spectroscopy'. Solid-State Electronics, 52 (9):1274-1279 [DOI] [Details]
(2008)'Electrical, Structural, and Chemical Properties of Hfo2 Films Formed By Electron Beam Evaporation'
Cherkaoui, K, Monaghan, S, Negara, MA, Modreanu, M, Hurley, PK, O'Connell, D, McDonnell, S, Hughes, G, Wright, S, Barklie, RC, Bailey, P, Noakes, TCQ; (2008) 'Electrical, Structural, and Chemical Properties of Hfo2 Films Formed By Electron Beam Evaporation'. Journal of Applied Physics, 104 (6) [DOI] [Details]
(2008)'Facile and Controlled Synthesis of Ultra-Thin Low Dielectric Constant Meso/Microporous Silica Films'
Farrell, RA, Petkov, N, Cherkaoui, K, Amenitsch, H, Holmes, JD, Hurley, PK, Morris, MA; (2008) 'Facile and Controlled Synthesis of Ultra-Thin Low Dielectric Constant Meso/Microporous Silica Films'. Chemphyschem, 9 (11):1524-1527 [DOI] [Details]
(2008)'In Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric'
O'Connor, E, Long, RD, Cherkaoui, K, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK, Brennan, B, Hughes, G, Newcomb, SB; (2008) 'In Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric'. Applied Physics Letters, 92 (2) [DOI] [Details]
(2008)'Interface Defects In Hfo2, Lasiox, and Gd2o3 High-K/Metal-Gate Structures On Silicon'
Hurley, PK, Cherkaoui, K, O'Connor, E, Lemme, MC, Gottlob, HDB, Schmidt, M, Hall, S, Lu, Y, Buiu, O, Raeissi, B, Piscator, J, Engstrom, O, Newcomb, SB; (2008) 'Interface Defects In Hfo2, Lasiox, and Gd2o3 High-K/Metal-Gate Structures On Silicon'. Journal of the Electrochemical Society, 155 (2):13-20 [DOI] [Details]
(2008)'Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films'
Farrell, RA,Petkov, N,Cherkaoui, K,Amenitsch, H,Holmes, JD,Hurley, PK,Morris, MA; (2008) 'Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films'. Chemphyschem, 9 :1524-1527 [DOI] [Details]
(2008)'High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy'
Raeissi, B,Piscator, J,Engstrom, O,Hall, S,Buiu, O,Lemme, MC,Gottlob, HDB,Hurley, PK,Cherkaoui, K,Osten, HJ; (2008) 'High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy'. Solid-State Electronics, 52 :1274-1279 [DOI] [Details]
(2008)'Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon'
Hurley, PK,Cherkaoui, K,O'Connor, E,Lemme, MC,Gottlob, HDB,Schmidt, M,Hall, S,Lu, Y,Buiu, O,Raeissi, B,Piscator, J,Engstrom, O,Newcomb, SB; (2008) 'Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon'. Journal of the Electrochemical Society, 155 :13-20 [DOI] [Details]
(2008)'In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric'
O'Connor, E,Long, RD,Cherkaoui, K,Thomas, KK,Chalvet, F,Povey, IM,Pemble, ME,Hurley, PK,Brennan, B,Hughes, G,Newcomb, SB; (2008) 'In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric'. Applied Physics Letters, 92 [DOI] [Details]
(2007)'Characterisation and Passivation of Interface Defects In (100)-Si/Sio2/Hfo2/Tin Gate Stacks'
Hurley, PK, Cherkaoui, K, McDonnell, S, Hughes, G, Groenland, AW; (2007) 'Characterisation and Passivation of Interface Defects In (100)-Si/Sio2/Hfo2/Tin Gate Stacks'. Microelectronics Reliability, 47 (8):1195-1201 [DOI] [Details]
(2007)'Characterisation and passivation of interface defects in (100)-Si/SiO2/HfO2/TiN gate stacks'
Hurley, PK,Cherkaoui, K,McDonnell, S,Hughes, G,Groenland, AW; (2007) 'Characterisation and passivation of interface defects in (100)-Si/SiO2/HfO2/TiN gate stacks'. Microelectronics Reliability, 47 :1195-1201 [DOI] [Details]
(2004)'High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications'
Ginige, R,Cherkaoui, K,Kwan, VW,Kelleher, C,Corbett, B; (2004) 'High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications'. Journal of Applied Physics, 95 :2809-2815 [DOI] [Details]
(2009)'Electrical characterization of the soft breakdown failure mode in MgO layers'
Miranda, E, O'Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK, Hughes, G, Casey, P (2009) 'Electrical characterization of the soft breakdown failure mode in MgO layers'. Applied Physics Letters, 95 (1):012901-1-012901-3 [DOI] [Details]
(2011)'The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system'
Zhang, P. F.,Nagle, R. E.,Deepak, N.,Povey, I. M.,Gomeniuk, Y. Y.,O'Connor, E.,Petkov, N.,Schmidt, M.,O'Regan, T. P.,Cherkaoui, K.,Pemble, M. E.,Hurley, P. K.,Whatmore, R. W. (2011) 'The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system'. Microelectronic Engineering, 88 (77):1054-10571054   [Details]
(2007)'Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films'
Farrell, R. A.,Cherkaoui, K.,Petkov, N.,Amenitsch, H.,Holmes, J. D.,Hurley, P. K.,Morris, M. A.; (2007) 'Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films'. Microelectronics Reliability, 47 (4-5):759-763   [Details]
(2008)'Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films'
Farrell, R. A.,Petkov, N.,Cherkaoui, K.,Amenitsch, H.,Holmes, J. D.,Hurley, P. K.,Morris, M. A.; (2008) 'Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films'. Chemphyschem, 9 (11):1524-7   [Details]
(2013)'Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors'
Monaghan, S. and O'Connor, E. and Povey, I.M. and Sheehan, B.J. and Cherkaoui, K. and Hutchinson, B.J.A. and Hurley, P.K. and Ferdousi, F. and Rios, R. and Kuhn, K.J. and Rahman, A. (2013) 'Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors'. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 31 (1)   [Details]
(2013)'Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors'
Miranda, E. and Jiménez, D. and Suñé, J. and O'Connor, E. and Monaghan, S. and Povey, I. and Cherkaoui, K. and Hurley, P.K. (2013) 'Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors'. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 31 (1)   [CORA Link] [Details]
(2013)'An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors'
Lin, J., Gomeniuk, Y.Y., Monaghan, S., Povey, I.M., Cherkaoui, K., O'Connor, É., Power, M., Hurley, P.K. (2013) 'An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors'. Journal of Applied Physics, 114 (14) [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2012)'Impact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric'
Djara, V. and Cherkaoui, K. and Schmidt, M. and Monaghan, S. and O'Connor, É. and Povey, I.M. and O'Connell, D. and Pemble, M.E. and Hurley, P.K. (2012) 'Impact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric'. IEEE Transactions on Electron Devices, 59 (4):1084-1090   [Details]
(2012)'The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications'
Toomey, B. and Cherkaoui, K. and Monaghan, S. and Djara, V. and O'Connor, E. and O'Connell, D. and Oberbeck, L. and Tois, E. and Blomberg, T. and Newcomb, S.B. and Hurley, P.K. (2012) 'The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications'. Microelectronic Engineering, 94 :7-10 [DOI] [Details]
(2012)'Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?'
Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K. (2012) 'Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?'. Electrochemical Society Transactions, 45 (3):79-88 [DOI] [Details]
(2012)'Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103))'
Long, R.D. and Shin, B. and Monaghan, S. and Cherkaoui, K. and Cagnon, J. and Stemmer, S. and McIntyre, P.C. and Hurley, P.K. (2012) 'Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103))'. Journal of the Electrochemical Society, 159 (6)   [DOI] [Details]
(2011)'Electrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs'
Gomeniuk, Y.Y.a and Gomeniuk, Y.V.a and Nazarov, A.N.a and Hurley, P.K.b and Cherkaoui, K.b and Monaghan, S.b and Hellström, P.-E.c and Gottlob, H.D.B.d and Schubert, J.e and Lopes, J.M.J.e (2011) 'Electrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs'. Advanced Materials Research, 276 :87-93   [Details]
(2011)'Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric'
O'Connor, É., Djara, V., Monaghan, S., Hurley, P.K., Cherkaoui, K. (2011) 'Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric'. Electrochemical Society Transactions, 35 (3):415-430 [DOI] [Details]
(2011)'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment'
O'Connor, E. and Monaghan, S. and Cherkaoui, K. and Povey, I.M. and Hurley, P.K. (2011) 'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment'. Applied Physics Letters, 99 (21):212901-1-212901-3 [DOI] [Details]
(2011)'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment'
O'Connor, E. and Monaghan, S. and Cherkaoui, K. and Povey, I.M. and Hurley, P.K. (2011) 'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment'. Applied Physics Letters, 99 (21):212901-1-212901-3 [DOI] [Details]
(2011)'Transport and interface states in high-κ LaSiO x dielectric'
Gomeniuk, Y.Y. and Gomeniuk, Y.V. and Tyagulskii, I.P. and Tyagulskii, S.I. and Nazarov, A.N. and Lysenko, V.S. and Cherkaoui, K. and Monaghan, S. and Hurley, P.K. (2011) 'Transport and interface states in high-κ LaSiO x dielectric'. Microelectronic Engineering, 88 (7):1342-1345   [Details]
(2010)'Electrical properties of LaLuO 3/Si(100) structures prepared by molecular beam deposition'
Gomeniuk, Y.Y., Gomeniuk, Y.V., Nazarov, A.N., Hurley, P.K., Cherkaoui, K., Monaghan, S., Gottlob, H.D.B., Schmidt, M., Schubert, J., Lopes, J.M.J., Engström, O. (2010) 'Electrical properties of LaLuO 3/Si(100) structures prepared by molecular beam deposition'. Electrochemical Society Transactions, 33 (3):221-227 [Details]
(2010)'Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer'
O'Mahony, A., Monaghan, S., Provenzano, G., Povey, I. M., Nolan, M. G., O'Connor, E., Cherkaoui, K., Newcomb, S. B., Crupi, F., Hurley, P. K., Pemble, M. E (2010) 'Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer'. Applied Physics Letters, 97 (5):052904-1-052904-3 [DOI] [Details]
(2010)'Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer'
O'Mahony, A., Monaghan, S., Provenzano, G., Povey, I. M., Nolan, M. G., O'Connor, E., Cherkaoui, K., Newcomb, S. B., Crupi, F., Hurley, P. K., Pemble, M. E (2010) 'Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer'. Applied Physics Letters, 97 (5):052904-1-052904-3 [DOI] [Details]
(2009)'TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications'
Monaghan, S. and Cherkaoui, K. and O'Connor, É. and Djara, V. and Hurley, P.K. and Oberbeck, L. and Tois, E. and Wilde, L. and Teichert, S. (2009) 'TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications'. IEEE Electron Device Letters, 30 (3):219-221   [Details]
(2009)'Degradation dynamics and breakdown of MgO gate oxides'
Miranda, E. and O'Connor, E. and Hughes, G. and Casey, P. and Cherkaoui, K. and Monaghan, S. and Long, R. and O'Connell, D. and Hurley, P.K. (2009) 'Degradation dynamics and breakdown of MgO gate oxides'. Microelectronic Engineering, 86 (7-9):1715-1717   [Details]
(2009)'Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors'
Lu, Y. and Hall, S. and Tan, L.Z. and Mitrovic, I.Z. and Davey, W.M. and Raeissi, B. and Engström, O. and Cherkaoui, K. and Monaghan, S. and Hurley, P.K. and Gottlob, H.D.B. and Lemme, M.C. (2009) 'Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors'. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27 (1):352-355   [Details]
(2009)'Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers'
Miranda, E., O'Connor, E., Hughes, G., Casey, P., Cherkaoui, K., Monaghan, S., Long, R.D., O'Connell, D., Hurley, P.K. (2009) 'Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers'. Electrochemical Society Transactions, 25 (6):79-86 [DOI] [Details]
(2008)'In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric'
O'Connor, E.,Long, R. D.,Cherkaoui, K.,Thomas, K. K.,Chalvet, F.,Povey, I. M.,Pemble, M. E.,Hurley, P. K.,Brennan, B.,Hughes, G.,Newcomb, S. B. (2008) 'In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric'. Applied Physics Letters, 92 (22)   [Details]
(2008)'Thin and continuous films with controlled bi- and tri-modal porosities by embedment of zeolite nanoparticles in a mesoporous matrix'
Farrell RA, Petkov, N; Cherkaoui K, Hurley P, Amenitsch H, Holmes JD and Morris MA; (2008) 'Thin and continuous films with controlled bi- and tri-modal porosities by embedment of zeolite nanoparticles in a mesoporous matrix'. J. Mat. Chem, 18 [Details]
(2008)'Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films'
Farrell RA, Petkov, N; Cherkaoui K, Hurley P, Amenitsch H, Holmes JD and Morris MA; (2008) 'Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films'. Chem. Phys. Chem, 9 [Details]
(2012)'On the activation of implanted silicon ions in p-In0.53Ga0.47As'
Djara, V. and Cherkaoui, K. and Newcomb, S. B. and Thomas, K. and Pelucchi, E. and O'Connell, D. and Floyd, L. and Dimastrodonato, V. and Mereni, L. O. and Hurley, P. K. (2012) 'On the activation of implanted silicon ions in p-In0.53Ga0.47As'. Semiconductor Science and Technology, 27 (8) [Details]
(2011)'Electrical analysis of three-stage passivated In(0.53)Ga(0.47)As capacitors with varying HfO(2) thicknesses and incorporating an Al(2)O(3) interface control layer'
Monaghan, S. and O'Mahony, A. and Cherkaoui, K. and O'Connor, E. and Povey, I. M. and Nolan, M. G. and O'Connell, D. and Pemble, M. E. and Hurley, P. K. and Provenzano, G. and Crupi, F. and Newcomb, S. B. (2011) 'Electrical analysis of three-stage passivated In(0.53)Ga(0.47)As capacitors with varying HfO(2) thicknesses and incorporating an Al(2)O(3) interface control layer'. Journal of Vacuum Science & Technology B, 29 (1) [Details]
(2011)'A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As/InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers'
O'Connor, É. and Brennan, B. and Djara, V. and Cherkaoui, K. and Monaghan, S. and Newcomb, S.B. and Contreras, R. and Milojevic, M. and Hughes, G. and Pemble, M.E. and Wallace, R.M. and Hurley, P.K. (2011) 'A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As/InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers'. Journal of Applied Physics, 109 (2)   [Details]
(2002)'Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer'
Cherkaoui, K,Murtagh, ME,Kelly, PV,Crean, GM,Cassette, S,Delage, SL,Bland, SW (2002) 'Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer'. Journal of Applied Physics, 92 :2803-2806 [DOI] [Details]
(2013)'Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs'
Negara, MA,Djara, V,O'Regan, TP,Cherkaoui, K,Burke, M,Gomeniuk, YY,Schmidt, M,O'Connor, E,Povey, IM,Quinn, AJ,Hurley, PK (2013) 'Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs'. Solid-State Electronics, 88 :37-42 [DOI] [Details]
(2013)'The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System'
Hurley, PK,O'Connor, E,Djara, V,Monaghan, S,Povey, IM,Long, RD,Sheehan, B,Lin, J,McIntyre, PC,Brennan, B,Wallace, RM,Pemble, ME,Cherkaoui, K (2013) 'The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System'. IEEE Transactions on Device and Materials Reliability, 13 :429-443 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V,O'Regan, TP,Cherkaoui, K,Schmidt, M,Monaghan, S,O'Connor, E,Povey, IM,O'Connell, D,Pemble, ME,Hurley, PK (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Method for Extracting Doping Concentration and Flat-Band Voltage in Junctionless Multigate MOSFETs Using 2-D Electrostatic Effects'
Rudenko, T,Yu, R,Barraud, S,Cherkaoui, K,Nazarov, A (2013) 'Method for Extracting Doping Concentration and Flat-Band Voltage in Junctionless Multigate MOSFETs Using 2-D Electrostatic Effects'. IEEE Electron Device Letters, 34 :957-959 [DOI] [Details]
(2013)'An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors'
Lin, J,Gomeniuk, YY,Monaghan, S,Povey, IM,Cherkaoui, K,O'Connor, E,Power, M,Hurley, PK (2013) 'An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors'. Journal of Applied Physics, 114 [DOI] [Details]
(2013)'Performance of 22 nm Tri-Gate Junctionless Nanowire Transistors at Elevated Temperatures'
Das, S,Yu, R,Cherkaoui, K,Razavi, P,Barraud, S (2013) 'Performance of 22 nm Tri-Gate Junctionless Nanowire Transistors at Elevated Temperatures'. Ecs Solid State Letters, 2 :62-65 [DOI] [Details]
(2011)'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)(2)S treatment'
O'Connor, E,Monaghan, S,Cherkaoui, K,Povey, IM,Hurley, PK (2011) 'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)(2)S treatment'. Applied Physics Letters, 99 [DOI] [Details]
(2009)'Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures'
Monaghan, S,Hurley, PK,Cherkaoui, K,Negara, MA,Schenk, A (2009) 'Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures'. Solid-State Electronics, 53 :438-444 [DOI] [Details]
(2014)'On the mobility behavior in highly doped junctionless nanowire SOI MOSFETs'
Rudenko, T.,Yu, R.,Barraud, S.,Cherkaoui, K.,Razavi, P.,Fagas, G.,Nazarov, A. N. (2014) 'On the mobility behavior in highly doped junctionless nanowire SOI MOSFETs'. Functional Nanomaterials and Devices Vii, 854 :35-43   [Details]
(2008)'In situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric'
OConnor, E and Long, RD and Cherkaoui, K and Thomas, KK and Chalvet, F and Povey, IM and Pemble, ME and Hurley, PK and Brennan, B and Hughes, G and others (2008) 'In situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric'. Applied Physics Letters, 92 (2):022902-022902 [Details]
(2013)'Electrically active interface defects in the In< sub> 0.53 Ga< sub> 0.47 As MOS system'
Djara, V and O’Regan, TP and Cherkaoui, K and Schmidt, M and Monaghan, S and O’Connor, \'E and Povey, IM and O’Connell, D and Pemble, ME and Hurley, PK (2013) 'Electrically active interface defects in the In< sub> 0.53 Ga< sub> 0.47 As MOS system'. Microelectronic Engineering, 109 :182-188 [Details]
(2013)'Electron mobility in heavily doped junctionless nanowire SOI MOSFETs'
Rudenko, T.,Nazarov, A.,Yu, R.,Barraud, S.,Cherkaoui, K.,Razavi, P.,Fagas, G. (2013) 'Electron mobility in heavily doped junctionless nanowire SOI MOSFETs'. Microelectronic Engineering, 109 :326-329   [Details]
(2011)'A systematic study of (NH4) 2S passivation (22\%, 10\%, 5\%, or 1\%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers'
O’Connor, \'E and Brennan, B and Djara, V and Cherkaoui, K and Monaghan, S and Newcomb, SB and Contreras, R and Milojevic, M and Hughes, G and Pemble, ME and others (2011) 'A systematic study of (NH4) 2S passivation (22\%, 10\%, 5\%, or 1\%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers'. Journal of Applied Physics, 109 (2) [Details]
(2011)'The structural and electrical properties of the SrTa< sub> 2 O< sub> 6/In< sub> 0.53 Ga< sub> 0.47 As/InP system'
Zhang, PF and Nagle, RE and Deepak, N and Povey, IM and Gomeniuk, YY and O’Connor, E and Petkov, N and Schmidt, M and O’Regan, TP and Cherkaoui, K and others (2011) 'The structural and electrical properties of the SrTa< sub> 2 O< sub> 6/In< sub> 0.53 Ga< sub> 0.47 As/InP system'. Microelectronic Engineering, 88 (7):1054-1057 [Details]
(2008)'Electrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation'
Cherkaoui, K.,Monaghan, S.,Negara, M. A.,Modreanu, M.,Hurley, P. K.,O'Connell, D.,McDonnell, S.,Hughes, G.,Wright, S.,Barklie, R. C.,Bailey, P.,Noakes, T. C. Q. (2008) 'Electrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation'. Journal of Applied Physics, 104 (66)   [Details]
(2013)'Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure'
Gomeniuk, YY and Gomeniuk, YV and Nazarov, AN and Monaghan, S and Cherkaoui, K and O'Connor, \'E and Povey, I and Djara, V and Hurley, PK (2013) 'Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure'. ECS Transactions, 58 (7):379-384 [Details]

Conference Publications

 YearPublication
(2012)28th International Conference on Microelectronics - Proceedings (MIEL) 2012, art. no. 6222790
Miranda, E. , Jiménez, D. , Suñé, J. , O'Connor, E. , Monaghan, S. , Cherkaoui, K. , Hurley, P.K. (2012) Spatial statistics for micro/nanoelectronics and materials science 28th International Conference on Microelectronics - Proceedings (MIEL) 2012, art. no. 6222790 , pp.23-30 [DOI] [Details]
(2012)13th International Conference on Ultimate Integration on Silicon (ULIS) 2012, art. no. 6193349
Djara, V. , Cherkaoui, K. , Schmidt, M. , Gomeniuk, Y.Y. , O'Connor, É. , Povey, I.M. , O'Connell, D. , Monaghan, S. , Pemble, M.E. , Hurley, P.K. (2012) Study of interface and oxide defects in high-k/In0.53Ga0.47As n-MOSFETs 13th International Conference on Ultimate Integration on Silicon (ULIS) 2012, art. no. 6193349 , pp.29-32 [DOI] [Details]
(2012)221st Electrochemical Society Meeting
Gity, F; Byun, K; Lee, K; Cherkaoui, K; Hayes, J; Morrison, A. P.; Colinge, C; Corbett, B; (2012) Ge/Si p-n Diode Fabricated by Direct Wafer Bonding and Layer Exfoliation 221st Electrochemical Society Meeting Seattle, Washington, USA, [Details]
(2012)5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting; Code93682
Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K. (2012) Can metal/Al 2O 3/In 0.53Ga 0.47As/InP MOSCAP properties translate to metal/Al 2O 3/In 0.53Ga 0.47As/InP MOSFET characteristics? . In: Dielectric Science and Technology Division of ECS,Electronics and Photonics,Sensor,New Technology Subcommittee,IEEE Electron Device Society (EDS) eds. 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting; Code93682 Seattle, WA, USA, , 06-MAY-12 - 10-MAY-12 , pp.79-88   [DOI] [Details]
(2006)25th International Conference on Microelectronics
Cherkaoui, K.,Negara, A.,McDonnell, S.,Hughes, G.,Modreanu, M.,Hurley, P. K.,Ieee, (2006) Electrical properties of HfO(2) films formed by ion assisted deposition. 2006 25th International Conference on Microelectronics , pp.379-382   [Details]
(2009)IEEE International Reliability Physics Symposium Proceedings 2009, art. no. 5173330
Miranda, E. , O'Connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O'Connell, D. , Hurley, P.K. (2009) Soft breakdown in MgO dielectric layers IEEE International Reliability Physics Symposium Proceedings 2009, art. no. 5173330 , pp.688-691 [DOI] [Details]
(2008)9th International Conference on ULtimate Integration of Silicon (ULIS) 2008, art. no. 4527151
Monaghan, S. , Hurley, P.K. , Cherkaoui, K. , Negara, M.A. , Schenk, A. (2008) Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling 9th International Conference on ULtimate Integration of Silicon (ULIS) 2008, art. no. 4527151 , pp.107-110 [DOI] [Details]
(2012)Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Djara, V and Cherkaoui, K and Schmidt, M and Gomeniuk, YY and O'Connor, E and Povey, IM and O'Connell, D and Monaghan, S and Pemble, ME and Hurley, PK (2012) Study of interface and oxide defects in high-k/In 0.53 Ga 0.47 As n-MOSFETs Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on , pp.29-32 [Details]
(2013)Device Research Conference (DRC), 2013 71st Annual
Djara, V and Cherkaoui, K and Lopez, T and O'Connor, E and Povey, IM and Thomas, KK and Hurley, PK (2013) Junctionless InGaAs MOSFETs with InAlAs barrier isolation and channel thinning by digital wet etching Device Research Conference (DRC), 2013 71st Annual , pp.131-132 [Details]
(2009)Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2009, art. no. 5232695
Miranda, E. , O'connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O'Connell, D. , Hurley, P.K. (2009) Post-breakdown conduction in metal gate/MgO/InP structures Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2009, art. no. 5232695 , pp.71-74 [DOI] [Details]

Other

 YearPublication
(2011)The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system.
Zhang, PF,Nagle, RE,Deepak, N,Povey, IM,Gomeniuk, YY,O'Connor, E,Petkov, N,Schmidt, M,O'Regan, TP,Cherkaoui, K,Pemble, ME,Hurley, PK,Whatmore, RW (2011) The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system. Other [DOI] [Details]
(2001)Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p(+)GaAs base layers.
Moriarty, GR,Murtagh, M,Cherkaoui, K,Gouez, G,Kelly, PV,Crean, GM,Bland, SW (2001) Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p(+)GaAs base layers. Other [Details]
(2009)Gd Silicate: A High-K Dielectric Compatible With High Temperature Annealing.
Gottlob, HDB, Stefani, A, Schmidt, M, Lemme, MC, Kurz, H, Mitrovic, IZ, Werner, M, Davey, WM, Hall, S, Chalker, PR, Cherkaoui, K, Hurley, PK, Piscator, J, Engstrom, O, Newcomb, SB; (2009) Gd Silicate: A High-K Dielectric Compatible With High Temperature Annealing. Other [DOI] [Details]
(2009)Gd silicate: A high-k dielectric compatible with high temperature annealing.
Gottlob, HDB,Stefani, A,Schmidt, M,Lemme, MC,Kurz, H,Mitrovic, IZ,Werner, M,Davey, WM,Hall, S,Chalker, PR,Cherkaoui, K,Hurley, PK,Piscator, J,Engstrom, O,Newcomb, SB (2009) Gd silicate: A high-k dielectric compatible with high temperature annealing. Other [DOI] [Details]
(2009)Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors.
Lu, Y,Hall, S,Tan, LZ,Mitrovic, IZ,Davey, WM,Raeissi, B,Engstrom, O,Cherkaoui, K,Monaghan, S,Hurley, PK,Gottlob, HDB,Lemme, MC (2009) Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors. Other [DOI] [Details]
(2009)Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics.
Gottlob, HDB,Schmidt, M,Stefani, A,Lemme, MC,Kurz, H,Mitrovic, IZ,Davey, WM,Hall, S,Werner, M,Chalker, PR,Cherkaoui, K,Hurley, PK,Piscator, J,Engstrom, O,Newcomb, SB (2009) Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics. Other [DOI] [Details]
(2009)Degradation dynamics and breakdown of MgO gate oxides.
Miranda, E,O'Connor, E,Hughes, G,Casey, P,Cherkaoui, K,Monaghan, S,Long, R,O'Connell, D,Hurley, PK (2009) Degradation dynamics and breakdown of MgO gate oxides. Other [DOI] [Details]
(2008)Gentle Fusi Nisi Metal Gate Process For High-K Dielectric Screening.
Gottlob, HDB, Lemme, MC, Schmidt, M, Echtermeyer, TJ, Mollenhauer, T, Kurz, H, Cherkaoui, K, Hurley, PK, Newcomb, SB; (2008) Gentle Fusi Nisi Metal Gate Process For High-K Dielectric Screening. Other [DOI] [Details]
(2008)Gentle FUSI NiSi metal gate process for high-k dielectric screening.
Gottlob, HDB,Lemme, MC,Schmidt, M,Echtermeyer, TJ,Mollenhauer, T,Kurz, H,Cherkaoui, K,Hurley, PK,Newcomb, SB (2008) Gentle FUSI NiSi metal gate process for high-k dielectric screening. Other [DOI] [Details]
(2007)Extracting The Relative Dielectric Constant For High-K Layers From Cv Measurements - Errors and Error Propagation.
Buiu, O, Hall, S, Engstrom, O, Raeissi, B, Lemme, M, Hurley, PK, Cherkaoui, K; (2007) Extracting The Relative Dielectric Constant For High-K Layers From Cv Measurements - Errors and Error Propagation. Other [DOI] [Details]
(2007)Physical and Electrical Properties of Low Dielectric Constant Self-Assembled Mesoporous Silica Thin Films.
Farrell, RA, Cherkaoui, K, Petkov, N, Amenitsch, H, Holmes, JD, Hurley, PK, Morris, MA; (2007) Physical and Electrical Properties of Low Dielectric Constant Self-Assembled Mesoporous Silica Thin Films. Other [DOI] [Details]
(2007)The Influence of Hfo2 Film Thickness On The Interface State Density and Low Field Mobility of N Channel Hfo2/Tin Gate Mosfets.
Negara, AA, Cherkaoui, K, Majhi, P, Young, CD, Tsai, W, Bauza, D, Ghibaudo, G, Hurley, PK; (2007) The Influence of Hfo2 Film Thickness On The Interface State Density and Low Field Mobility of N Channel Hfo2/Tin Gate Mosfets. Other [DOI] [Details]
(2007)Navigation Aids In The Search For Future High-K Dielectrics: Physical and Electrical Trends.
Engstrom, O, Raeissi, B, Hall, S, Buiu, O, Lemme, MC, Gottlob, HDB, Hurley, PK, Cherkaoui, K; (2007) Navigation Aids In The Search For Future High-K Dielectrics: Physical and Electrical Trends. Other [DOI] [Details]
(2007)The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETs.
Negara, AA,Cherkaoui, K,Majhi, P,Young, CD,Tsai, W,Bauza, D,Ghibaudo, G,Hurley, PK (2007) The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETs. Other [DOI] [Details]
(2007)Extracting the relative dielectric constant for high-k layers from CV measurements - Errors and error propagation.
Buiu, O,Hall, S,Engstrom, O,Raeissi, B,Lemme, M,Hurley, PK,Cherkaoui, K (2007) Extracting the relative dielectric constant for high-k layers from CV measurements - Errors and error propagation. Other [DOI] [Details]
(2007)Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films.
Farrell, RA,Cherkaoui, K,Petkov, N,Amenitsch, H,Holmes, JD,Hurley, PK,Morris, MA (2007) Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films. Other [DOI] [Details]
(2007)Navigation aids in the search for future high-k dielectrics: Physical and electrical trends.
Engstrom, O,Raeissi, B,Hall, S,Buiu, O,Lemme, MC,Gottlob, HDB,Hurley, PK,Cherkaoui, K (2007) Navigation aids in the search for future high-k dielectrics: Physical and electrical trends. Other [DOI] [Details]
(2006)Electrically Active Defects At The Interface Between (100)Si and Hafnium Dioxide Thin Films.
Hurley, PK, Cherkaoui, K; (2006) Electrically Active Defects At The Interface Between (100)Si and Hafnium Dioxide Thin Films. Other [Details]
(2006)Electrical Properties of Hfo2 Films Formed By Ion Assisted Deposition.
Cherkaoui, K, Negara, A, McDonnell, S, Hughes, G, Modreanu, M, Hurley, PK; (2006) Electrical Properties of Hfo2 Films Formed By Ion Assisted Deposition. Other [Details]
(2005)Impact of H-2/N-2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks.
Schmidt, M,Lemme, MC,Kurz, H,Witters, T,Schram, T,Cherkaoui, K,Negara, A,Hurley, PK (2005) Impact of H-2/N-2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks. Other [DOI] [Details]
(2009)Scaling Potential and Mosfet Integration of Thermally Stable Gd Silicate Dielectrics.
Gottlob, HDB, Schmidt, M, Stefani, A, Lemme, MC, Kurz, H, Mitrovic, IZ, Davey, WM, Hall, S, Werner, M, Chalker, PR, Cherkaoui, K, Hurley, PK, Piscator, J, Engstrom, O, Newcomb, SB; (2009) Scaling Potential and Mosfet Integration of Thermally Stable Gd Silicate Dielectrics. Other [DOI] [Details]

Professional Activities

Patents

 Patent NumberTitleInventorGranted
WO2014162018-A1Three dimensional (3D) complementary metal oxide semiconductor (CMOS) inverter HURLEY P, CHERKAOUI K, DJARA V09-OCT-14

Committees

 CommitteeFunctionFrom / To
Technical Committee of the Workshop on Dielectrics in Microelectronics Conference organisation, topics/papers selection and reviewing2008 /

Education

 YearInstitutionQualificationSubject
1998Institut des Sciences Appliquées, Lyon, France Doctor of ScienceSemiconductor Physics

Languages

 LanguageReadingWritingSpeaking
French FluentFluentFluent

Journal Activities

 JournalRoleTo / From
J Vac Sci Technol B Referee-
Thin Solid Films Referee-
Ieee Electron Device Letters Referee-
J Appl Phys Referee-
Appl Surf Sci Referee-
Ieee Transactions On Electron Devices Referee-

Teaching Activities

Recent Postgraduates

 Graduation YearStudent NameInstitutionDegree TypeThesis Title
2012Brian Toomey NUI (UCC)MScErbium doped Hafnium oxide MIM capacitors for DRAM application
2015Eamon O'Connor UCCPHDInvestigation of electrically active defects at the interface of high-k dielectrics and compound semiconductors
2014Vladimir Djara UCCPHDDevelopment of Inversion-Mode and Junctionless Indium-Gallium-Arsenide MOSFETs

Contact details


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School of Biological, Earth and Environmental Sciences

An Scoil Eolaíochtaí Bitheolaíocha, Domhaneolaíocha agus Comhshaoil

University College Cork, Distillery Fields, North Mall, Cork, Ireland T23 N73K

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