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Professor Peter James Parbrook BSc, PhD
Associations |
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| Association: International Advisory Committee for International Workshop on Nitride Semiconductors , Function/Role: Member |
| Association: Progamme Committee for ISSLED2010 , Function/Role: Member |
| Association: Steering Committee of EPSRC funded GaN grant at Cambridge University , Function/Role: Member |
| Association: EPSRC College (inc sitting on funding, mid-term review and advisory panels). , Function/Role: Member (Reviewer, Panel Assessor, Interviewer) |
| Association: Management committee for the UK Nitrides Consortium, treasurer from 2003-2008, Function/Role: Member |
| Association: International Conference on Nitride Semiconductors, Function/Role: Conference Co-chair |
| Association: UK Technology Strategy Board. , Function/Role: Reviewer |
| Association: Science Foundation Ireland, Function/Role: Reviewer |
| Association: Programme Committee for ISSLED2012, Function/Role: Member |
Conference Contributions |
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| M D Smith, D O'Mahony, L Floyd, P J Parbrook (2012) Theoretical Comparative Study of InAlN/GaN and AlGaN/GaN Devices Based on Preliminary Material Data. [Poster Presentation], 6th Space Agency-MOD Workshop on Wide Bandgap Semiconductors and Components, ESA-ESTEC, Noordwijk, The Netherlands , 08-OCT-12 - 09-OCT-12. |
| H N Li, T C Sadler, Z Quan, V Z Zubialevich, M Conroy, P J Parbrook (2012) Strain Relief for Aluminium Gallium Nitride using GaN/AlN interlayers. [Poster Presentation], UK Semiconductors 2012, Sheffield , 04-JUL-12 - 05-JUL-12. |
| M Smith, T C Sadler, H N Li, V Z Zubialevich, P J Parbrook (2012) The effect of NH3 flux on the MOCVD growth of AlN interlayers for InAlN HEMTs. [Poster Presentation], U K Semiconductors 2012, Sheffield, UK , 04-JUL-12 - 05-JUL-12. |
| G Naresh-Kumar, B Hourahine, P R Edwards, J Brickbauer, R W Martin, C Mauder, A P Day, A Winkelmann, P J Parbrook, A J Wilkinson, C Trager-Cowan (2012) Applications of electron channelling contrast imaging for characterising nitride semiconductor thin films in an scanning electron microscope. [Poster Presentation], UK Semiconductors 2012, Sheffield , 04-JUL-12 - 05-JUL-12. |
| M A Conroy, T C Sadler, H N Li, V Z Zubialevich, J D Holmes, P J Parbrook (2012) Structural Characterisation of Novel UV-LED Growth. [Poster Presentation], UK Semiconductors 2012, Sheffield , 04-JUL-12 - 05-JUL-12. |
| M D Smith, T C Sadler, H N Li, V Z Zubialevich, P J Parbrook (2012) Improved Carrier Mobility in InAlN/AlN/GaN HEMT Devices for Space Applications. [Oral Presentation], 6th Space Agency - MOD Workshop on Wideband Gap Semiconductors and Components, ESA-ESTEC, Noordwijk, The Netherlands , 08-OCT-12 - 09-OCT-12. |
| H N Li, T C Sadler, V Z Zubialevich, M Conroy, S Norouzian and P J Parbrook (2013) Effect of thin GaN layer between AlN-template and AlGaN buffer on optical properties of the 340 nm InAlN/AlGaN multiple quantum wells. [Oral Presentation], UK Nitrides Consortium Winter Meeting 2013, Cardiff, Wales , 08-JAN-13 - 09-JAN-13. |
| P J Parbrook (2013) -. [Chair Sessions at Symposia], UK Nitrides Consortium Winter Meeting 2013, Cardiff, Wales , 08-JAN-13 - 09-JAN-13. |
| N. Allehiani, N. Kumar, P. R. Edwards, B. Hourahine, H. Li, P. J. Parbrook, C. Trager-Cowan (2013) Correlating structural and luminescence properties of nitride semiconductor thin films using electron channelling contrast imaging and cathodoluminescence hyperspectral imaging. [Poster Presentation], UK Nitrides Consortium Winter Meeting 2013, Cardiff, Wales , 08-JAN-13 - 09-JAN-13. |
| D. O’Mahony, M. Smith, T. Sadler, P. Maaskant, B. Corbett and P. J. Parbrook (2013) Electrical Characteristics of Ohmic contacts on InAlN/GaN and AlGaN/GaN HEMTs. [Poster Presentation], UK Nitrides Consortium Winter Meeting 2013, Cardiff, Wales , 08-JAN-13 - 09-JAN-13. |
| M. Smith, L. Floyd, D. O’Mahony and P. J. Parbrook (2013) Comparative simulation study of InAlN/GaN and AlGaN/GaN HEMT devices. [Poster Presentation], UK Nitrides Consortium Winter Meeting 2013, Cardiff, Wales , 08-JAN-13 - 09-JAN-13. |
| Haoning Li, Thomas Sadler and Peter Parbrook (2012) Different approaches to successful AlN epitaxy by MOVPE. [Oral Presentation], UK Nitrides Consortium Winter Meeting 2012, Bath, England , 04-JAN-12 - 05-JAN-12. |
| V Zubialevich, T C Sadler, H N Li, Z Quan, P J Parbrook (2012) Growth of AlGaN on sapphire suing AlN/GaN superlattices as strain relaxing layers. [Poster Presentation], 4th International Symposium on Growth of III-Nitrides, St Petersburg, Russia , 16-JUL-12 - 19-JUL-12. |
| T C Sadler, H N Li, V Zubialevich, M Conroy, Z Quan, P J Parbrook (2012) Routes to Aluminium Gallium Nitride Buffer Layers for UV-LED Growth. [Oral Presentation], 9th International Symposium on Semiconductor Light Emitting Devices, Berlin, Germany , 22-JUL-12 - 27-JUL-12. |
| P J Parbrook (2012) MBE/Sputtering Session. [Chair Sessions at Symposia], 7th International Conference on Nitride Semiconductors, Sapporo, Japan , 15-OCT-12 - 19-OCT-12. |
| Thomas Sadler, Haoning Li and Peter Parbrook (2012) InAlN epitaxy on AlN: Comparisons and contrasts with epitaxy on GaN. [Oral Presentation], UK Nitrides Consortium Winter Meeting 2012, Bath, England , 04-JAN-12 - 05-JAN-12. |
| T C Sadler, H N Li, V Zubialevich, M Conroy, Z Quan, P J Parbrook (2012) Routes to Aluminium Gallium Nitride Buffer Layers for UV-LED Growth. [Poster Presentation], 4th International Symposium on Growth of III-Nitrides, St Petersburg, Russia , 16-JUL-12 - 19-JUL-12. |
| Matthew Smith, Thomas Sadler, Haoning Li and Peter Parbrook (2012) Initial investigations into InAlN HEMT reliability and the effects of including an AlN interlayer. [Poster Presentation], UK Nitrides Consortium Winter Meeting 2012, Bath, England , 04-JAN-12 - 05-JAN-12. |
| Donagh O‟Mahony, Peter Parbrook, Thomas Sadler and Brian Corbett (2012) Development of III-nitride/Si solar cells. [Poster Presentation], UK Nitrides Consortium Winter Meeting 2012, Bath, England , 04-JAN-12 - 05-JAN-12. |
| P J Parbrook (2012) Organisation. [Conference Organising Committee Member], Uk Nitrides Consortium Winter Meeting 2012, Bath, England , 04-JAN-12 - 05-JAN-12. |
| Thomas C Sadler, Elaine Taylor, Zhiheng Quan, Miguel Caro, Haoning Li, Michele A Conroy, Vitaly Zubialevich, Robert W Martin, Peter J Parbrook (2012) Flip Chip Ultraviolet Light Emitting Diodes Utilising Polarisation Matched InAlN/AlGaN MQWs. [Poster Presentation], 7th International Workshop on Nitride Semiconductors, Sapporo, Japan , 14-OCT-12 - 19-OCT-12. |
| Thomas C Sadler, Haoning Li, Zhiheng Quan, Michele A Conroy, Vitaly Zubialevich, Justin D Holmes, and Peter J Parbrook (2012) Aluminium gallium buffer layers for Ultraviolet Light Emitting Diodes incorporating sacrificial gallium nitride layers for flip chip processing. [Poster Presentation], 7th International Workshop on Nitride Semiconductors, Sapporo, Japan , 14-OCT-12 - 19-OCT-12. |
| Naresh Kumar Gunasekar, Ben Hourahine, Paul R Edwards, Jochen Bruckbauer, Robert W Martin, Christof Mauder, Austin Day, Aimo Winkelmann, Peter Parbrook, Angus J Wilkinson, Carol Trager Cowan (2012) Applications of electron channelling contrast imaging for characterizing nitride semiconductor thin films in a scanning electron microscope. [Oral Presentation], 7th International Workshop on Nitride Semiconductors, Sapporo, Japan , 14-OCT-12 - 19-OCT-12. |
| D. O’Mahony, N. Cordero, I. Mathews, B. Corbett, A. P. Morrison, P. Parbrook (2011) Theoretical Performance of InGaN Photovoltaic Cells under High Solar Concentration. [Poster Presentation], 9th International Conference on Nitride Semiconductors, Glasgow, Scotland , 10-JUL-11 - 15-JUL-11. |
| P J Parbrook (2011) Plenary Session. [Chair Sessions at Symposia], 9th International Conference on Nitride Semiconductors, Glasgow, Scotland , 10-JUL-11 - 15-JUL-11. |
| P J Parbrook (2011) What's the Next Big Thing in MOVPE. [Invited Oral Presentation], 9th International Conference on Nitride Semiconductors, Glasgow, Scotland , 10-JUL-11 - 15-JUL-11. |
| P J Parbrook (2011) III-Nitride Semiconductor Optoelectronics: Moving from the Visible to the Ultra-Violet. [Invited Lectures (Conference)], My Fab Users Meeting 2011, Gothenburg, Sweden , 12-APR-11 - 13-APR-11. |
| Parbrook P.J. (2010) Chair. [Conference Organising Committee Chairperson], UK Nitrides Consortium Winter Conference 2010, Cork, Ireland , 04-JAN-10 - 05-JAN-10. |
| Donagh O'Mahony, Nicolas Cordero, Brian Corbett, Peter Parbrook (2010) Tunnel junction considerations for monolithic multi-junction solar cells based on InGaN. [Oral Presentation], 6th International Workshop on Nitride Semiconductors, Tampa, Florida, USA , 18-SEP-11 - 24-SEP-10. |
| P J Parbrook (2009) Gallium Nitride Optoelectronics: From the Ultra-Violet to the Infrared?. [Invited Seminars/Guest Lectures], Toshiba Fellowship Alumni Meeting 2009, London, England , 28-NOV-09 - 28-NOV-09. |
| W S Tan, M W Low, R T Green, P J Parbrook, T Wang, P A Houston, M J Uren, R S Balmer, T Martin, P McGovern and P J Tasker; (2005) Variation in SiNx passivation of AlGaN/GaN HFETs. UK Nitrides Consortium Winter Meeting 2005, Manchester, England , 04-JAN-05 - 05-JAN-05. |
| J J Toriz-Garcia, P J Parbrook, T Wang, J P R David, R J Airey and G Hill; (2005) The optoelectronic characteristics of GaN p-i-n photodiodes. UK Nitrides Consortium Winter Meeting 2005, Manchester,England , 04-JAN-05 - 05-JAN-05. |
| I H Brown, P Blood, P M Smowton, J D Thompson, A M Fox, S M Olaizola, P J Parbrook and W W Chow ; (2005) Time evolution of the screening of piezoelectric fields in InGaN Quantum Wells. UK Nitrides Consortium Winter Meeting 2005, Manchester, England , 04-JAN-05 - 05-JAN-05. |
| A Hashemizadeh, J-P R Wells, J Brown, B D Jones, P Murzyn, T Wang, P J Parbrook, D J Mowbray, D O Kundys, A M Fox and M S Skolnick; (2005) The magnesium acceptor states in GaN: An investigation by optically detected magnetic resonance. [Oral Presentation], 6th International Conference on Nitride Semiconductors, Bremen, Germany , 26-JUN-05 - 01-JUL-05. |
| C Trager-Cowan, F Sweeny, P Trimby, A Day, A Gholinia, N-H Schmidt, P J Parbrook, A J Wilkinson and I M Watson ; (2005) Electron backscatter diffraction and forescatter imaging of nitride thin films. [Oral Presentation], UK Nitrides Consortium Winter Meeting 2005, Manchester, England , 04-JAN-05 - 05-JAN-05. |
| T Wang, P J Parbrook, F Ranalli, J Bai, K B Lee, A Tahraoui, R J Airey, G Hill and A G Cullis; (2005) AlGaN based UV emission. [Oral Presentation], UK Nitrides Consortium Summer Meeting 2005, Nottingham, England , 01-JAN-05 - 01-JAN-05. |
| D O Kundys, J-P R Wells, A Hashemizadeh, T Wang, P J Parbrook, M S Skolnick, A M Fox and D J Mowbray; (2005) Four-wave mixing spectroscopy of InGaN/GaN QWs. [Oral Presentation], UK Nitrides Consortium Summer Meeting 2005, Nottingham, England , 01-JUL-05 - 01-JUL-05. |
| F Ranalli, J Bai, T Wang, P J Parbrook, G Hill and A Tahraoui (2005) Growth and Properties of 350 nm AlInGaN UV-LEDs. UK Nitrides Consortium Winter Meeting 2005, Manchester, England , 04-JAN-05 - 05-JAN-05. |
| M P Halsall, B Sherliker, P Harrsion, V D Jovanovic, D Injin, Z Ikonic, P D Buckle, T Wang, M A Whitehead, and P J Parbrook; (2004) Nitride based quantum well infrared photodetectors (QWIPs), design, growth, spectroscopy and working devices. [Oral Presentation], UK Nitrides Consortium Winter Meeting 2004, Durham, England , 06-JAN-04 - 07-JAN-04. |
| G N Aliev, S Zeng, D Wolverson, S J Bingham, J J Davies and P J Parbrook; (2004) Mg-doped GaN: Annealing and concentration-dependence probed by optically detected magnetic resonance. [Oral Presentation], UK Nitrides Consortium Winter Meeting 2004, Durham, England , 06-JAN-04 - 07-JAN-04. |
| P J Parbrook, T Wang, M S Skolnick, D Sanvitto and C N Harrison; (2004) High reflectivity Bragg mirrors in the UV. [Oral Presentation], UK Nitrides Consortium Winter Meeting 2004, Durham, England , 06-JAN-04 - 07-JAN-04. |
| W H Fan, S M Olaizola, J-P R Wells, D J Mowbray, M S Skolnick, A M Fox, T Wang and P J Parbrook; (2004) Electron capture time in InGaN/GaN multiple quantum wells. Conf. Lasers and Electro-Optics, * , 01-JAN-04 - 01-JAN-04. |
| B Sherliker, M P Halsall, P J Parbrook and T Wang; (2004) Micro-photoluminescence and photocurrent studies of InGaN quantum dots grown by MOVPE at low surface densities on GaN. [Oral Presentation], 5th International Conference on Low Dimensional Structures and Superlattices, Cancun, Mexico , 01-DEC-04 - 01-DEC-04. |
| P J Parbrook, T Wang, F Ranalli, C N Harrison, J S Ng, J P R David, A Tahraoui, G Hill, W C Hung and A G Cullis; (2004) Development of Nitride Laser Diode. [Oral Presentation], UK Nitrides Consortium Summer Meeting 2004, QinetiQ, Malvern, England , 01-JUL-04 - 01-JUL-04. |
| J Toriz, P J Parbrook, T Wang, J P R David, J S Ng, and R J Airey ; (2004) Gallium nitride photodetectors. UK Nitrides Consortium Summer Meeting 2004, QinetiQ, Malvern, England , 01-JUL-04 - 01-JUL-04. |
| A Alyamani, D Sanvitto, T Wang, P J Parbrook and M S Skolnick; (2004) Ultra-violet Bragg mirrors and microcavities. [Oral Presentation], UK Nitrides Consortium Summer Meeting 2004, QinetiQ, Malvern, England , 01-JUL-04 - 01-JUL-04. |
| P J Parbrook, T Wang, M P Halsall, B Sherliker, P Harmer; (2004) Growth of low density InGaN quantum dot layers by MOVPE. 3rd International Workshop on Nitride Semiconductors, Pittsburgh, USA , 18-JUL-04 - 23-JUL-04. |
| P J Parbrook, T Wang, R J Lynch, C N Harrison, D Sanvitto and M S Skolnick; (2004) High reflectivity ultra-violet Bragg mirrors. 3rd International Workshop on Nitride Semiconductors, Pittsburgh, USA , 18-JUL-04 - 23-JUL-04. |
| T Wang and P J Parbrook ; (2004) MOCVD growth of high performance UV-LEDs and violet/blue LDs. [Invited Oral Presentation], International Conference on Physics Education and Frontier Research, 4th joint meeting of overseas Chinese physicists, Shanghai, China , 01-JAN-04 - 01-JAN-04. |
| M Lada, A G Cullis, P J Parbrook and M A Whitehead (2004) Effects of anneal on GaN nucleation layers and subsequent epilayers. [Oral Presentation], UK Nitrides Consortium Winter Meeting 2004, Durham, England , 06-JAN-04 - 07-JAN-04. |
| C Trager-Cowan, F Sweeney, P R Edwards, A J Wilkinson, R W Martin, P Trimby, N-H Schmidt, P J Parbrook and D Zubia; (2004) Characterisation of nitride thin films by the combination of electron backscatter diffraction, X-ray diffraction and cathodoluminescence. 3rd International Workshop on Nitride Semiconductors, Pittsburgh, USA , 18-JUL-04 - 23-JUL-04. |
Committees |
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| Committee : Electrical and Electronic Engineering Strategy Committee From:01-JAN-12 To: |
| Committee : Electrical and Electronic Engineering Postgraduate Committee From:01-JAN-12 To: |
| Committee : Promotion to Professor (Scale 2) Board From:19-OCT-12 To: |
Employment |
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| Employer: UCC Position: Stokes Professor of Nitride Materials and Devices From:27-APR-09 To: |
| Employer: Department of Electronic and Electrical Engineering, University of Sheffield, UK Position: Lecturer, Senior Lecturer, Reader in Electronic Engineering From:25-SEP-95 To: 26-APR-09 |
| Employer: Toshiba Central Research Laboratories, Toshiba Corporation, Kawasaki, Japan Position: Research Fellow From:20-FEB-91 To: 15-SEP-95 |
| Employer: Department of Physics, University of Strathclyde Position: Postgraduate Research Associate From:01-OCT-87 To: 30-SEP-90 |
Education |
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| Year 1987 Institution: University of Strathclyde Qualification: BSC Subject: Physics |
| Year 1991 Institution: University of Strathclyde Qualification: PHD Subject: Physics |
Languages |
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| English: |
| Japanese: |
| German: |
| French: |
Consultancy |
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| Client: : University of Strathclyde |
| Client: : University of Strathclyde |
Reviews |
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| Applied Physics Letters: Referee. |
| Journal Of Crystal Growth : Referee. |
| Optics Express: Referee. |
| Journal Of Applied Physics: Referee. |
Other Activities |
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| Asked on two occasions to act as expert witness in patent disputes relating to GaN based LED technology |
| Authored Commerical Report on use of GaN as photocathode material (2002) |
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Selected Research Grants, prior to coming to UCC. • EPSRC (UK) Support for the EPSRC National Centre for III-V Technologies at Sheffield (2006-10) £4,631,647 Co-investigator,
PI responsibility for III-N activity worth around £600,000 |
| External Examiner for 6 Ph.D. and 1 M.Phil. student |
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