Research Profile

Biography

Research Grants

 ProjectFunding
Body
Start DateEnd DateAward
SFI Starting Investigator Research GrantScience Foundation Ireland01-SEP-1431-AUG-18€448,328.00
Royal Irish Academy/Royal Society International Exchange Cost Share Agreement 2016Royal Irish Academy (RIA)01-APR-1630-MAR-18€4,344.00
IRCSET Embark Initiative Postdoctoral FellowshipIrish Research Council01-DEC-0830-NOV-10€83,100.00
Feodor-Lynen Postdoctoral Research FellowshipAlexander Von Humboldt Foundation01-MAY-0830-NOV-08€18,000.00

Publications

Book Chapters

 YearPublication
(2017)'Electronic Band Structure'
S. Schulz, E. P. O'Reilly (2017) 'Electronic Band Structure' In: Joachim Piprek (eds). HANDBOOK OF OPTOELECTRONIC DEVICE MODELING AND SIMULATION. Oxford: Taylor & Francis Books. [Details]
(2014)'Analysis of Reduced Built-In Polarization Fields and Electronic Structure of InGaN/GaN Quantum Dot Molecules'
S. Schulz and E. P. O'Reilly (2014) 'Analysis of Reduced Built-In Polarization Fields and Electronic Structure of InGaN/GaN Quantum Dot Molecules' In: Jiang Wu and Zhiming M. Wang (eds). Quantum Dot Molecules. New York: Springer.   [DOI] [Details]
(2014)'Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures'
Eoin P O’Reilly, Oliver Marquardt, Stefan Schulz and Aleksey D. Andreev (2014) 'Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures' In: Matthias Ehrhardt and Thomas Koprucki (eds). Multi-Band Effective Mass Approximations Lecture Notes in Computational Science and Engineering. Heidelberg: Springer International Publishing.   [Details]

Peer Reviewed Journals

 YearPublication
(2016)'Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots'
R Benchamekh, S Schulz, EP O'Reilly (2016) 'Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots'. Physical Review B: Condensed Matter, 94 [DOI] [Details]
(2016)'The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells'
P Dawson, S Schulz, RA Oliver, MJ Kapper, CJ Humphreys (2016) 'The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells'. Journal of Applied Physics, 119 (18) [DOI] [Details]
(2016)'Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states'
Daniel SP Tanner, Miguel A Caro, Eoin P O'Reilly, Stefan Schulz (2016) 'Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states'. RSC Advances, 6 (69) [DOI] [Details]
(2016)'Strongly nonparabolic variation of the band gap in In x Al1− x N with low indium content'
Vitaly Z Zubialevich, Duc V Dinh, Shahab N Alam, Stefan Schulz, Eoin P O’Reilly, Peter J Parbrook (2016) 'Strongly nonparabolic variation of the band gap in In x Al1− x N with low indium content'. Semiconductor Science and Technology, 31 (2) [Details]
(2016)'Atomistic analysis of the electronic structure of m‐plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations'
Daniel P Tanner, Miguel A Caro, Eoin P O'Reilly, Stefan Schulz (2016) 'Atomistic analysis of the electronic structure of m‐plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations'. Physica Status Solidi (B), 253 (5) [DOI] [Details]
(2016)'Polar, semi-and non-polar nitride-based quantum dots: influence of substrate orientation and material parameter sets on electronic and optical properties'
Patra, S Kanta and Marquardt, O and Schulz, S (2016) 'Polar, semi-and non-polar nitride-based quantum dots: influence of substrate orientation and material parameter sets on electronic and optical properties'. Optical and Quantum Electronics, 48 (2):1-10 [Details]
(2015)'Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory'
Caro, MA;Schulz, S;O'Reilly, EP (2015) 'Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory'. Physical Review B, 91 [DOI] [Details]
(2015)'Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory'
Schulz, S;Tanner, DP;O'Reilly, EP;Caro, MA;Martin, TL;Bagot, PAJ;Moody, MP;Tang, F;Griffiths, JT;Oehler, F;Kappers, MJ;Oliver, RA;Humphreys, CJ;Sutherland, D;Davies, MJ;Dawson, P (2015) 'Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory'. Physical Review B, 92 [DOI] [Details]
(2015)'Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells'
Stefan Schulz, Miguel A. Caro, Conor Coughlan, and Eoin P. O'reilly (2015) 'Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells'. Physical Review B: Condensed Matter, 91   [DOI] [Details]
(2015)'Electronic Structure of Polar and Semipolar (11-22)-Oriented Nitride Dot-in-a-Well Systems'
S Schulz, O Marquardt (2015) 'Electronic Structure of Polar and Semipolar (11-22)-Oriented Nitride Dot-in-a-Well Systems'. Physical Review Aphysical Review A, 3 (6) [DOI] [Details]
(2015)'Color stability, wave function overlap and leakage currents in InGaN-based LED structures: the role of the substrate orientation'
Grzegorz Kozlowski, Brian Corbett, Stefan Schulz (2015) 'Color stability, wave function overlap and leakage currents in InGaN-based LED structures: the role of the substrate orientation'. Semiconductor Science and Technology, 30 (5) [Details]
(2015)'Band gap bowing and optical polarization switching in Al1−xGaxN alloys'
Conor Coughlan, Stefan Schulz, Miguel A. Caro, and Eoin P. O'Reilly (2015) 'Band gap bowing and optical polarization switching in Al1−xGaxN alloys'. Physica Status Solidi (B), [DOI] [Details]
(2014)'Polarization matching design of InGaN-based semi-polar quantum wells-A case study of (11(2)over-bar2) orientation'
Kozlowski, G,Schulz, S,Corbett, B (2014) 'Polarization matching design of InGaN-based semi-polar quantum wells-A case study of (11(2)over-bar2) orientation'. Applied Physics Letters, 104 [DOI] [Details]
(2014)'Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap'
Schulz S.; M. A. Caro; O'Reilly E. P. (2014) 'Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap'. Physica Status Solidi (C) Current Topics in Solid State Physics, 11 (3-4):762-765 [DOI] [Details]
(2014)'Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian'
Marquardt, O,O'Reilly, EP,Schulz, S (2014) 'Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian'. Journal of Physics-Condensed Matter, 26 [DOI] [Details]
(2014)'Impact of cation-based localized electronic states on the conduction and valence band structure of Al1-xInxN alloys'
Schulz, S,Caro, MA,O'Reilly, EP (2014) 'Impact of cation-based localized electronic states on the conduction and valence band structure of Al1-xInxN alloys'. Applied Physics Letters, 104 [DOI] [Details]
(2014)'A generalized plane-wave formulation of k·p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures'
Oliver Marquardt, Sixten Boeck, Christoph Freysoldt, Tilmann Hickel, Stefan Schulz, Jörg Neugebauer, Eoin P. O’Reilly (2014) 'A generalized plane-wave formulation of k·p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures'. Computational Materials Science, 95 :280-287 [DOI] [Details]
(2014)'Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire'
Kundys, D.; Schulz, S.; Oehler, F.; Sutherland, D.; Badcock, T. J.; Dawson, P.; Kappers, M. J.; Oliver, R. A.; Humphreys, C. J. (2014) 'Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire'. Journal of Applied Physics, 115 (11) [DOI] [Details]
(2013)'Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions'
Crowley, MT,Heck, SC,Healy, SB,Osborne, S,Williams, DP,Schulz, S,O'Reilly, EP (2013) 'Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions'. Semiconductor Science and Technology, 28 [DOI] [Details]
(2013)'Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides'
Caro, MA,Schulz, S,O'Reilly, EP (2013) 'Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides'. Physical Review B, 88 [DOI] [Details]
(2013)'Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study'
Schulz, S,Caro, MA,Tan, LT,Parbrook, PJ,Martin, RW,O'Reilly, EP (2013) 'Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study'. Applied Physics Express, 6 [DOI] [Details]
(2013)'Comparison of stress and total energy methods for calculation of elastic properties of semiconductors'
Caro, MA,Schulz, S,O'Reilly, EP (2013) 'Comparison of stress and total energy methods for calculation of elastic properties of semiconductors'. Journal of Physics-Condensed Matter, 25 [DOI] [Details]
(2012)'Ground state switching in InGaN/GaN quantum dot molecules'
Schulz, S,O'Reilly, EP (2012) 'Ground state switching in InGaN/GaN quantum dot molecules'. Physica Status Solidi B-Basic Solid State Physics, 249 :516-520 [DOI] [Details]
(2012)'Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides'
Caro, MA,Schulz, S,O'Reilly, EP (2012) 'Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides'. Physical Review B, 86 [DOI] [Details]
(2012)'Piezoelectric properties of zinc blende quantum dots'
Schulz, S,Caro, MA,O'Reilly, EP,Marquardt, O (2012) 'Piezoelectric properties of zinc blende quantum dots'. Physica Status Solidi B-Basic Solid State Physics, 249 :521-525 [DOI] [Details]
(2012)'Built-in field control in nitride nanostructures operating in the UV'
Caro, M. A.; Schulz, S.; Healy, S. B.; O'Reilly, E. P. (2012) 'Built-in field control in nitride nanostructures operating in the UV'. Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (3-4):838-841 [DOI] [Details]
(2012)'Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots'
Schulz, S,Caro, MA,O'Reilly, EP (2012) 'Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots'. Applied Physics Letters, 101 [DOI] [Details]
(2012)'Effect of alloy fluctuations on the local polarization in nitride nanostructures'
Caro, MA,Schulz, S,O'Reilly, EP (2012) 'Effect of alloy fluctuations on the local polarization in nitride nanostructures'. Physica Status Solidi B-Basic Solid State Physics, 249 :526-530 [DOI] [Details]
(2012)'A flexible, plane-wave based multiband k center dot p model'
Marquardt, O,Schulz, S,Freysoldt, C,Boeck, S,Hickel, T,O'Reilly, EP,Neugebauer, J (2012) 'A flexible, plane-wave based multiband k center dot p model'. Optical and Quantum Electronics, 44 :183-188 [DOI] [Details]
(2011)'Built-in field reduction in InGaN/GaN quantum dot molecules'
Schulz, S,O'Reilly, EP (2011) 'Built-in field reduction in InGaN/GaN quantum dot molecules'. Applied Physics Letters, 99 [DOI] [Details]
(2011)'Built-in fields in stacked InGaN/GaN quantum dots'
Schulz, S,O'Reilly, EP; (2011) 'Built-in fields in stacked InGaN/GaN quantum dots'. Physica Status Solidi A-Applications and Materials Science, 208 :1551-1554 [DOI] [Details]
(2011)'Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots'
Schulz, S,Caro, MA,O'Reilly, EP,Marquardt, O; (2011) 'Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots'. Physical Review B: Condensed Matter, 84 [DOI] [Details]
(2011)'Built-in field control in alloyed c-plane III-N quantum dots and wells'
Caro, MA,Schulz, S,Healy, SB,O'Reilly, EP; (2011) 'Built-in field control in alloyed c-plane III-N quantum dots and wells'. Journal of Applied Physics, 109 [DOI] [Details]
(2011)'Tight-binding model for the electronic and optical properties of nitride-based quantum dots'
Schulz, S,Mourad, D,Schumacher, S,Czycholl, G (2011) 'Tight-binding model for the electronic and optical properties of nitride-based quantum dots'. Physica Status Solidi B-Basic Solid State Physics, 248 :1853-1866 [DOI] [Details]
(2011)'Optical spectra of nitride quantum-dot systems: From tight-binding states to many-body effects'
Seebeck, J,Lorke, M,Schulz, S,Schuh, K,Gartner, P,Jahnke, F (2011) 'Optical spectra of nitride quantum-dot systems: From tight-binding states to many-body effects'. Physica Status Solidi B-Basic Solid State Physics, 248 :1871-1878 [DOI] [Details]
(2010)'Built-in fields in non-polar In(x)Ga(1-x)N quantum dots'
Schulz, S.; O'Reilly, E. P. (2010) 'Built-in fields in non-polar In(x)Ga(1-x)N quantum dots'. Physica Status Solidi (C) Current Topics in Solid State Physics, 7 (1):80-83 [DOI] [Details]
(2010)'Characterising the degree of polarisation anisotropy in an a-plane GaN film'
Badcock, T. J.; Schulz, S.; Moram, M. A.; Kappers, M. J.; Dawson, P.; O'Reilly, E. P.; Humphreys, C. J. (2010) 'Characterising the degree of polarisation anisotropy in an a-plane GaN film'. Physica Status Solidi (C) Current Topics in Solid State Physics, 7 (7-8) [DOI] [Details]
(2010)'Excitonic binding energies in non-polar GaN quantum wells'
Schulz, S.; O'Reilly, E. P. (2010) 'Excitonic binding energies in non-polar GaN quantum wells'. Physica Status Solidi (C) Current Topics in Solid State Physics, 7 (7-8) [DOI] [Details]
(2010)'Electronic and optical properties of nonpolar a-plane GaN quantum wells'
Schulz, S,Badcock, TJ,Moram, MA,Dawson, P,Kappers, MJ,Humphreys, CJ,O'Reilly, EP; (2010) 'Electronic and optical properties of nonpolar a-plane GaN quantum wells'. Physical Review B: Condensed Matter, 82 [DOI] [Details]
(2010)'Theory of reduced built-in polarization field in nitride-based quantum dots'
Schulz, S,O'Reilly, EP; (2010) 'Theory of reduced built-in polarization field in nitride-based quantum dots'. Physical Review B: Condensed Matter, 82 [DOI] [Details]
(2009)'Multiband description of the optical properties of zincblende nitride quantum dots'
Schulz, S,Mourad, D,Czycholl, G (2009) 'Multiband description of the optical properties of zincblende nitride quantum dots'. Physical Review B, 80 [DOI] [Details]
(2009)'Polarization fields in nitride-based quantum dots grown on nonpolar substrates'
Schulz, S,Berube, A,O'Reilly, EP (2009) 'Polarization fields in nitride-based quantum dots grown on nonpolar substrates'. Physical Review B: Rapid Communications, 79 [DOI] [Details]
(2009)'Theory of Gan Quantum Dots For Optical Applications'
Williams, DP, Schulz, S, Andreev, AD, O'Reilly, EP; (2009) 'Theory of Gan Quantum Dots For Optical Applications'. IEEE Journal of Selected Topics In Quantum Electronics, 15 (4):1092-1103 [DOI] [Details]
(2009)'Excitation-induced energy shifts in the optical gain spectra of InN quantum dots'
Lorke, M,Seebeck, J,Gartner, P,Jahnke, F,Schulz, S (2009) 'Excitation-induced energy shifts in the optical gain spectra of InN quantum dots'. Applied Physics Letters, 95 [DOI] [Details]
(2009)'Theory of GaN Quantum Dots for Optical Applications'
Williams, DP,Schulz, S,Andreev, AD,O'Reilly, EP; (2009) 'Theory of GaN Quantum Dots for Optical Applications'. IEEE Journal of Selected Topics In Quantum Electronics, 15 :1092-1103 [DOI] [Details]
(2008)'Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure'
Schulz, S.; Schumacher, S.; Czycholl, G. (2008) 'Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure'. The European Physical Journal B, 64 (1):51-60 [DOI] [Details]
(2008)'Comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots'
Marquardt, O.; Mourad, D.; Schulz, S.; Hickel, T.; Czycholl, G.; Neugebauer, J. (2008) 'Comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots'. Physical Review B: Condensed Matter, 78 (23) [DOI] [Details]
(2007)'Semiconductor nanocrystals and embedded quantum dots: Electronic and optical properties'
Schulz, S.; Schumacher, S.; Czycholl, G. (2007) 'Semiconductor nanocrystals and embedded quantum dots: Electronic and optical properties'. Physica Status Solidi B-Basic Solid State Physics, 244 (7):2399-2406 [DOI] [Details]
(2007)'Influence of symmetry and Coulomb correlation effects on the optical properties of nitride quantum dots'
Baer, N.; Schulz, S.; Gartner, P.; Schumacher, S.; Czycholl, G.; Jahnke, F. (2007) 'Influence of symmetry and Coulomb correlation effects on the optical properties of nitride quantum dots'. Physical Review B: Condensed Matter, 76 (7) [DOI] [Details]
(2006)'Tight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra'
Schulz, S.; Schumacher, S.; Czycholl, G. (2006) 'Tight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra'. Physical Review B: Condensed Matter, 73 (24) [DOI] [Details]
(2006)'Electronic states in nitride semiconductor quantum dots: A tight-binding approach'
Schulz, S. ; Czycholl, G. (2006) 'Electronic states in nitride semiconductor quantum dots: A tight-binding approach'. Physica Status Solidi (C) Current Topics in Solid State Physics, 3 (6):1675-1678 [DOI] [Details]
(2006)'Microscopic tight-binding description for electronic and optical properties of InN/GaN quantum dots'
Schulz, S. ;Baer, N. ;Schumacher, S. ;Gartner, P. ;Jahnke, F. ;Czycholl, G. (2006) 'Microscopic tight-binding description for electronic and optical properties of InN/GaN quantum dots'. Physica Status Solidi (C) Current Topics in Solid State Physics, :3827-3831 [DOI] [Details]
(2005)'Tight-binding model for semiconductor nanostructures'
Schulz, S. ;Czycholl, G (2005) 'Tight-binding model for semiconductor nanostructures'. Physical Review B: Condensed Matter, 72 (16) [Details]
(2005)'Optical properties of self-organized wurtzite InN/GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation'
Baer, N ; Schulz, S ; Schumacher, S ; Gartner, P ; Czycholl, G ; Jahnke, F (2005) 'Optical properties of self-organized wurtzite InN/GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation'. Applied Physics Letters, 87 (23) [DOI] [Details]

Conference Publications

 YearPublication
(2016)SPIE OPTO, Photonics West
B Corbett, Z Quan, DV Dinh, G Kozlowski, D O'Mahony, M Akhter, S Schulz, P Parbrook, P Maaskant, M Caliebe, M Hocker, K Thonke, F Scholz, M Pristovsek, Y Han, CJ Humphreys, F Brunner, M Weyers, TM Meyer, L Lymperakis (2016) Development of semipolar (11-22) LEDs on GaN templates . In: Heonsu Jeon; Li-Wei Tu; Michael R. Krames; Martin Strassburg eds. SPIE OPTO, Photonics West [DOI] [Details]
(2015)2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
EP O'Reilly, S Schulz, D Tanner, C Coughlan, Miguel A Caro (2015) Impact of random composition fluctuations on electron and hole states in InAlN and InGaN alloys 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Taiwan, , 07-SEP-15 - 11-SEP-15 [DOI] [Details]
(2015)2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Stefan Schulz, Oliver Marquardt (2015) Electronic properties of polar and semi-polar dot-in-a-well heterostructures 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Taiwan, , 07-SEP-15 - 11-SEP-15 [DOI] [Details]
(2015)SPIE OPTO, Photonics West
S Schulz, O Marquardt, C Coughlan, MA Caro, O Brandt, EP O'Reilly (2015) Atomistic description of wave function localization effects in InxGa1-xN alloys and quantum wells . In: Bernd Witzigmann; Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa eds. SPIE OPTO, Photonics West San Francisco, [DOI] [Details]
(2012)Built-in field control in nitride nanostructures operating in the UV
Caro, MA,Schulz, S,Healy, SB,O'Reilly, EP,Parbrook, PJ,Martin, RW,Halsall, MP (2012) PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 Built-in field control in nitride nanostructures operating in the UV , pp.838-841 [DOI] [Details]
(2009)29th International Conference on Physics of Semiconductors
Mourad, D.; Schulz S.; Czycholl G. (2009) Electronic and Optical Properties of Group-III-Nitride Semiconductor Quantum Dots . In: Caldas, MJ; Studart, N eds. 29th International Conference on Physics of Semiconductors Rio de Janeiro, BRAZIL, , 27-JUL-08 - 01-AUG-08 , pp.285-286 [Details]
(2006)28th International Conference on the Physics of Semiconductors (ICPS-28)
Schulz, S.; Schumacher, S.; Czycholl, G. (2006) InN/GaN quantum dots: Electronic and optical properties 28th International Conference on the Physics of Semiconductors (ICPS-28) Vienna, AUSTRIA, , 24-JUL-06 - 28-JUL-06 , pp.897-898 [Details]

Professional Activities

Honours and Awards

 YearTitleAwarding Body
2016Royal Irish Academy - Royal Society International Exchange Cost Share Programme Royal Irish Acadamy (RIA) & Royal Society (RS)
2015Best Poster Award at 11th International Conference on Nitride Semiconductors, Beijing, China International Conference on Nitride Semiconductors
2013Starting Investigator Research Grant Science Foundation Ireland
2008IRCSET Embark Initiative Postdoctoral Fellowship Irish Research Council
2008Feodor-Lynen Postdoctoral Research Fellowship Alexander von Humboldt Foundation
2008Bremer Studienpreis 2008 University of Bremen
2007YACHT TECCON doctoral thesis award University of Bremen

Professional Associations

 AssociationFunctionFrom / To
German Physical Society (DPG) Member/
Material Research Society (MRS) Member/

Conference Contributions

 YearPublication
(2016)International Workshop on Nitride Semiconductors,
Stefan Schulz (2016) Electronic and Optical Properties of c‐ and m‐Plane InGaN Quantum Wells—Influence of Structural Inhomogeneities and Random Alloy Fluctuations. [Invited Oral Presentation], International Workshop on Nitride Semiconductors, Orlando, Florida, USA , 02-OCT-16 - 07-OCT-16. [Details]
(2016)Research Seminar at Technical University Berlin,
Stefan Schulz (2016) Electronic and optical properties of polar & m-plane InGaN/GaN quantum wells: Influence of indium content, random alloy and well width fluctuations. [Invited Seminars/Guest Lectures], Research Seminar at Technical University Berlin, Berlin, Germany , 15-JUN-16 - 15-JUN-16. [Details]
(2016)Graduate Lecture,
Stefan Schulz (2016) Carrier localization effects in wurtzite InGaN and InAlN systems: Impact of random alloy fluctuations and structural inhomogeneities. [Invited Seminars/Guest Lectures], Graduate Lecture, University of Paderborn, Paderborn, Germany , 08-JUN-16. [Details]
(2016)Workshop on Tight Binding Atomistic Theory of Optoelectronic Properties of Semiconductor Nanostructures,
Stefan Schulz (2016) Lectures, including a hands-on sessions, on tight binding theory and practical implementation for nanostructures. [Invited Lectures (Workshops)], Workshop on Tight Binding Atomistic Theory of Optoelectronic Properties of Semiconductor Nanostructures, Aalto University, Espoo, Finland , 17-FEB-16 - 18-FEB-16. [Details]
(2015)15th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD),
Stefan Schulz, Daniel S. P. Tanner, Conor Coughlan, Miguel A. Caro, Eoin P. O'Reilly (2015) Impact of random composition fluctuations on electron and hole states in InAlN and InGaN alloys and heterostructures. [Invited Lectures (Conference)], 15th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Taipei, Taiwan , 07-SEP-15 - 11-SEP-15. [Details]
(2016)Research Seminar at Aalto University,
Stefan Schulz (2016) Random alloy fluctuations in InAlN and InGaN alloys and heterostructures: Consequences for electronic & optical properties. [Invited Seminars/Guest Lectures], Research Seminar at Aalto University, Aalto University, Espoo, Finland . [Details]
(2014)The International Workshop on Nitride Semiconductors (IWN 2014),
Schulz S.; M. A. Caro; O'Reilly E. P. (2014) Impact of alloy fluctuations on the electronic and optical properties of InAlN and InGaN systems: Insights from atomistic calculations. [Invited Oral Presentation], The International Workshop on Nitride Semiconductors (IWN 2014), Wrocław, Poland , 24-AUG-14 - 29-AUG-14. [Details]
(2013)GaN Workshop,
Schulz S (2013) Insights into built-in polarization fields, electronic structure and optical properties of nitride-based nanostructures. [Invited Lectures (Workshops)], GaN Workshop, Cambridge, United Kingdom , 17-JUL-13 - 18-JUL-13. [Details]
(2012)INTERNATIONAL CONFERENCE ON METALLURGICAL COATINGS & THIN FILMS (39th ICMCTF),
Schulz, S.; Caro M. A., O'Reilly E. P. (2012) Control and Engineering of Spontaneous and Piezoelectric Polarisation in Nitride-based Nanostructures. [Invited Oral Presentation], INTERNATIONAL CONFERENCE ON METALLURGICAL COATINGS & THIN FILMS (39th ICMCTF), San Diego , 23-APR-12. [Details]
(2009)Workshop on Physics of nitride-based, nanostructured, light emitting devices,
Schulz S (2009) Built-in fields in polar and non-polar nitride-based nanostructures. [Invited Oral Presentation], Workshop on Physics of nitride-based, nanostructured, light emitting devices, Bremen , 30-SEP-09 - 02-OCT-09. [Details]

Journal Activities

 JournalRoleTo / From
Physical Review B: Condensed Matter Referee-
Applied Physics Letters Referee-
Journal Of Physics D-Applied Physics Referee-
Physica Status Solidi B-Basic Solid State Physics Referee-
Ieee Journal Of Selected Topics In Quantum Electronics Referee-
Physica E-Low-Dimensional Systems & Nanostructuresphysica E-Low-Dimensional Systems & Nanostructures Referee-
Superlattices And Microstructures Referee-
Semiconductor Science And Technology Referee-

Teaching Activities

Teaching Interests

  • From Janunary 2017 Module Lecturer at the Department of Physics, UCC
  • From 2013 - 2016 Module Lecturer at the School of Mathematical Sciences, UCC.

Teaching Resources:
  • PY2102: Introduction to Quantum Physics
  • AM2006 & AM6014: Mathematical Modelling for Biological and Environmental Sciences


Recent Postgraduates

 Graduation YearStudent NameInstitutionDegree TypeThesis Title
2013Miguel A. Caro Bayo University College CorkPhDTheory of elasticity and electronic polarization effects in the group-III nitrides

Current Postgraduate Students

 StudentDegree Type
Patra Saroj Kanta Doctoral Degree
Tanner Daniel Doctoral Degree
Kirwan Amy Catherine Masters Degree by Research

Research Information

Internal Collaborators

 NameInstituteCountry
Eoin P. O'Reilly Tyndall National InstituteIRELAND
Peter J. Parbrook Tyndall National InstituteIRELAND
Brian Corbett Tyndall National InstituteIRELAND

External Collaborators

 NameOrganisation / InstituteCountry
Philip Dawson The University of ManchesterENGLAND
Colin J. Humphreys University of CambridgeENGLAND
Rachel A. Oliver University of CambridgeENGLAND
Robert Taylor University of OxfordENGLAND
Robert W. Martin University of StrathclydeSCOTLAND
Frank Jahnke University of BremenGERMANY
Gerd Czycholl University of BremenGERMANY
Oliver Marquardt Paul Drude InstituteGERMANY

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School of Food and Nutritional Sciences

School of Food and Nutritional Sciences, Room 240 Food Science Building, University College, Cork

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