Tyndall Micronano Electronics
UCC

T: +353 21 490 3000
E: @ucc.ie
Head of Group Nanoelectronic Mat & Devic
Tyndall Micronano Electronics
University College Cork
Cork
Ireland

T: +353-21-490-3000
F: +353 21 490 3000
E: paul.hurley@tyndall.ie
W: http://www.ucc.ie/

Dr. Hurley received his Ph.D. (1990) and B.Eng. (1985, 1st class honors) in Electronic Engineering at the University of Liverpool. Paul is a currently Senior Research Scientist and Head of the Nanoelectronic Materials and Devices Group at the Tyndall National Institute at University College Cork.  

Paul leads a research team of ten PhD students, post-doctoral researchers, visiting students and Tyndall Research staff who perform basic research on high dielectric constant (high-k) thin films for applications in nanoelectronics. The current research work covers use of high-k oxides in conjunction with III-V and 2D semiconductor materials for future energy efficient logic devices and the use of high-k films in integrated capacitors. The groups are also exploring the use of MOS systems in energy applications as well as investigating the electrical properties of emerging phase change materials. Paul received an Intel Outstanding Researcher award for his work in high-k/III-V interface defect studies in 2012.

Paul is a member of the Technical Committee of the Insulating Films on Semiconductors (INFOS) conference and the International Workshop on Dielectrics in Microelectronics (WoDiM). In addition to research activities, he is a part time lecturer in the Department of Electrical Engineering at University College Cork.

He has published over one hundred papers in the field of micro and nanoelectronics, and has given over 30 invited presentations and seminars in the high-k area from 2006 to 2014.

 

Research Interests

Paul leads a research team of ten PhD students, post-doctoral researchers, visiting students and Tyndall Research staff who perform basic research on high dielectric constant (high-k) thin films for applications in nanoelectronics. The current research work covers use of high-k oxides in conjunction with III-V and 2D semiconductor materials for future energy efficient logic devices and the use of high-k films in integrated capacitors. The groups are also exploring the use of MOS systems in energy applications as well as investigating the electrical properties of emerging phase change materials. Paul received an Intel Outstanding Researcher award for his work in high-k/III-V interface defect studies in 2012.

Paul is a member of the Technical Committee of the Insulating Films on Semiconductors (INFOS) conference and the International Workshop on Dielectrics in Microelectronics (WoDiM). In addition to research activities, he is a part time lecturer in the Department of Electrical Engineering at University College Cork.

He has published over one hundred papers in the field of micro and nanoelectronics, and has given over 25 invited presentations and seminars in the high-k area from 2006 to 2014.

Research Grants

 ProjectFunding
Body
Start DateEnd DateAward
Understanding the nature of Interfaces in two dimensional Electronic Devices.Science Foundation of Ireland01-NOV-1430-NOV-17€435,610.00
Compound Semiconductors for 3D integration.European Union01-NOV-1331-OCT-16€482,628.00
Characteristaion of 2D MaterialsIntel Corporation01-MAR-1428-FEB-15€100,000.00
Copper diffusion barrier layers for advanced interconnect integration.Science Foundation of Ireland01-SEP-1431-AUG-18€262,243.00
Hopkins Communicaqtions WoDIM Conference 2014Industry01-DEC-1301-MAY-14€51,150.00
Investigating the capacitance and conductance of narrow band gap MOS systems and its possible application to Cox extractionIntel Corporation01-APR-1328-MAR-14€40,000.00
"Investigating Emerging Non-Silicon Transistors (INVENT)"Science Foundation Ireland01-APR-1031-AUG-15€851,853.00
“Research into Emerging Nano-structured Electrodes for the splitting of Water (RENEW)Science Foundation Ireland01-DEC-1330-NOV-16€302,000.00
SYnthesis and functionality of chalcogenide NAnostructure for PhasSE change memories.European Union01-DEC-1230-NOV-15€306,686.00
The junctionless InGaAs MOSFET - The platform and the process.Science Foundation of Ireland01-JAN-1201-FEB-14€123,650.00
Dit extractions and interpretation on III-V device related structuresIntel Corporation02-APR-1229-MAR-13€40,000.00
Fabrication and characterisation of Schottky contacts and capacitor structures on Chalcogenide passivated germanium.Science Foundation of Ireland01-JAN-1231-DEC-12€6,655.00
Future Oxides and Channel Materials for Ultimate Scaling (FOCUS)Science Foundation of Ireland01-OCT-0931-DEC-15€286,538.00
Epitaxial Nanostructured GaAs on silicon for next generation Electronics (ENGAGE)Enterprise Ireland03-FEB-0931-AUG-12€372,000.00
IRCSET-Marie Curie International Mobility Fellowships in Science Engineering and TechnologyIrish Research Council for Science, Engineering & Technology (IRCSET)01-OCT-0930-SEP-12€228,948.00
An investigation of carrier transport in compound semiconductor MOSFETsIrish Research Council01-OCT-0928-SEP-12€255,000.00
Total External Reflection X-ray Fluorescence Spectrometer for Compositional Analysis of Thin FilmsScience Foundation of Ireland01-DEC-0730-MAY-08€129,204.00
SFI "High Dielectric Constant Materials for Future ICT"Science Foundation of Ireland01-AUG-0530-JUN-12€729,850.00
SFI-Summer Student David KohenScience Foundation of Ireland05-JUN-0728-AUG-07€5,795.00
EU 'Silicon-based Nanostructures & Nanodevices for Long Term Nanoelectronics Applications'European Union01-JAN-0831-DEC-15€128,925.00
SFI"Future Oxides & Channel Materials for Ultimate Scaling" FOCUSScience Foundation of Ireland01-MAY-0831-OCT-08€3,800.00
Fieldeffect controllable antifuse structures based on dielectric breakdownOther: Not Listed01-AUG-1031-JUL-12€15,000.00
Development of measurement capability for high-k/InGaAs systems and CV and GV analysis of samples from INTEL CRIntel Corporation01-APR-1130-MAR-12€110,000.00
FORMEScience Foundation Ireland01-DEC-0731-MAY-13€618,512.00
Summer Student - David HondagneuScience Foundation of Ireland05-JUN-0628-AUG-06€5,794.00
IRCSET Scholarship - Rathnait LongIrish Research Council for Science, Engineering & Technology (IRCSET)01-OCT-0628-FEB-10€48,006.00
‘Deposition of High-k Dielectrics on III-V Substrates’Irish Research Council02-OCT-0625-SEP-09€80,000.00
Pulling the Limits of NanoCMOS electronics (PULLNANO) EU Integrated ProjectEuropean Commission01-JUN-0630-SEP-09€140,000.00
Silicon-based nanostructures and nanodevices for nanoelectronics (NANOSIL) EU Network of ExcellenceEuropean Commission01-JAN-0830-DEC-10€130,000.00
Ferroelectrics for Europe (FLEUR)European Commission03-SEP-0125-AUG-04€285,000.00
Tantalum pentoxide photodeposition on silicon (TOPS)European Commission01-JUN-0030-JUN-03€345,000.00

Book Chapters

YearPublication
(2010)'Chapter 2: Gate Stacks'
O. Engström, I. Z. Mitrovic, S. Hall, P. K. Hurley, K. Cherkaoui, S. Monaghan, H. D. B. Gottlob and M. C. Lemme (2010) 'Chapter 2: Gate Stacks' In: Nanoscale CMOS: Innovative Materials, Modelling, and Characterisation. 111 River Street, Hoboken, NJ, USA: John Wiley & Sons, Inc. Globe icon [Details]
(2003)'Optical characterization of high-k dielectrics HfO(2) thin films obtained by MOCVD. Opto-Ireland 2002: Optics and Photonics Technologies and Applications, Pts 1 and 2'
Modreanu, M.,Hurley, P. K.,O'Sullivan, B. J.,O'Looney, B.,Senateur, J. P.,Rousell, H.,Rousell, F.,Audier, M.,Dubourdieu, C.,Boyd, I. W.,Fang, Q.,Leedham, T. L.,Rushworth, S.,Jones, A. C.,Davies, H.,Jimenez, C.,Blau, W. J.,Donegan, J. F.,Duke, A. F.,MacCraith, J. A.,McMillan, N. D.,Oconnor, G. M.,Omongain, E.,Toal, V.,McLaughlin, J. A. (2003) 'Optical characterization of high-k dielectrics HfO(2) thin films obtained by MOCVD. Opto-Ireland 2002: Optics and Photonics Technologies and Applications, Pts 1 and 2' In: Opto-Ireland 2002: Optics and Photonics Technologies and Applications, Pts 1 and 2Opto-Ireland 2002: Optics and Photonics Technologies and Applications, Pts 1 and 2. Globe icon [Details]
(2010)'Gate Stacks'
O. Engstrom, I.Z. Mitrovic, S. Hall, P.K. Hurley, K. Cherkaoui, S. Monaghan, H.D.B. Gottlob, M.C. Lemme (2010) 'Gate Stacks' In: Nanoscale CMOS Innovative Materials, Modeling and Characterization. 111 River Street, Hoboken, NJ, USA: John Wiley & Sons, Inc. [Details]

Peer Reviewed Journals

YearPublication
(2002)'Comparing leakage currents and dark count rates in Geiger-Mode avalanche photodiodes'
J. C. Jackson, P. K. Hurley, A. P. Morrison, B. Lane, and A. Mathewson.; (2002) 'Comparing leakage currents and dark count rates in Geiger-Mode avalanche photodiodes'. Applied Physics Letters, 80 (22):4100-4102 [Details]
(2011)'Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer'
S. Monaghan, A. O'Mahony, K. Cherkaoui, É. O'Connor, I. M. Povey, M. G. Nolan, D. O'Connell, M. E. Pemble, P. K. Hurley, G. Provenzano, F. Crupi, S. B. Newcomb; (2011) 'Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer'. Journal of Vacuum Science &Amp; Technology B, 29 [Details]
(2010)'A systematic study of NH42S passivation '22%, 10%, 5%, or 1%''
É. O'Connor; B. Brennan; V. Djara; K. Cherkaoui; S. Monaghan; S. B. Newcomb; R. Contreras; M. Milojevic; G. Hughes; M. E. Pemble; R. M. Wallace; P. K. Hurley; (2010) 'A systematic study of NH42S passivation '22%, 10%, 5%, or 1%''. Journal of Applied Physics, 109 [Details]
(2003)'Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices'
Modreanu, M,Gartner, A,Aperathitis, E,Tomozeiu, N,Androulidaki, M,Cristea, D,Hurley, P (2003) 'Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices'. Physica E-Low-Dimensional Systems & Nanostructures, 16 :461-466 [Details]
(2011)'The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system'
Zhang, P. F.,Nagle, R. E.,Deepak, N.,Povey, I. M.,Gomeniuk, Y. Y.,O'Connor, E.,Petkov, N.,Schmidt, M.,O'Regan, T. P.,Cherkaoui, K.,Pemble, M. E.,Hurley, P. K.,Whatmore, R. W. (2011) 'The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system'. Microelectronic Engineering, 88 (77):1054-10571054 Globe icon [Details]
(2012)'Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103))'
Long, R.D. and Shin, B. and Monaghan, S. and Cherkaoui, K. and Cagnon, J. and Stemmer, S. and McIntyre, P.C. and Hurley, P.K. (2012) 'Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103))'. Journal of the Electrochemical Society, 159 (6) Globe icon [DOI] [Details]
(2009)'Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors'
Lu, Y. and Hall, S. and Tan, L.Z. and Mitrovic, I.Z. and Davey, W.M. and Raeissi, B. and Engström, O. and Cherkaoui, K. and Monaghan, S. and Hurley, P.K. and Gottlob, H.D.B. and Lemme, M.C. (2009) 'Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors'. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27 (1):352-355 Globe icon [Details]
(2009)'Degradation dynamics and breakdown of MgO gate oxides'
Miranda, E. and O'Connor, E. and Hughes, G. and Casey, P. and Cherkaoui, K. and Monaghan, S. and Long, R. and O'Connell, D. and Hurley, P.K. (2009) 'Degradation dynamics and breakdown of MgO gate oxides'. Microelectronic Engineering, 86 (7-9):1715-1717 Globe icon [Details]
(2011)'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment'
O'Connor, E. and Monaghan, S. and Cherkaoui, K. and Povey, I.M. and Hurley, P.K. (2011) 'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment'. Applied Physics Letters, 99 (21):212901-1-212901-3 [DOI] [Details]
(2011)'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment'
O'Connor, E. and Monaghan, S. and Cherkaoui, K. and Povey, I.M. and Hurley, P.K. (2011) 'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment'. Applied Physics Letters, 99 (21):212901-1-212901-3 [DOI] [Details]
(2011)'Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors'
Long, R. D., Shin, B., Monaghan, S., Cherkaoui, K., Cagnon, J., Stemmer, S., McIntyre, P. C., Hurley, P.K.; (2011) 'Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors'. Journal of the Electrochemical Society, 158 :103-107 [DOI] [Details]
(2012)'The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications'
Toomey, B. and Cherkaoui, K. and Monaghan, S. and Djara, V. and O'Connor, E. and O'Connell, D. and Oberbeck, L. and Tois, E. and Blomberg, T. and Newcomb, S.B. and Hurley, P.K. (2012) 'The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications'. Microelectronic Engineering, 94 :7-10 [DOI] [Details]
(2011)'On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors'
Sonnet, A. M. and Galatage, R. V. and Hurley, P. K. and Pelucchi, E. and Thomas, K. K. and Gocalinska, A. and Huang, J. and Goel, N. and Bersuker, G. and Kirk, W. P. and Hinkle, C. L. and Wallace, R. M. and Vogel, E. M. (2011) 'On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors'. Applied Physics Letters, 98 (19) [Details]
(2011)'Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs'
Sonnet, A. M. and Galatage, R. V. and Hurley, P. M. and Pelucchi, E. and Thomas, K. and Gocalinska, A. and Huang, J. and Goel, N. and Bersuker, G. and Kirk, W. P. and Hinkle, C. L. and Vogel, E. M. (2011) 'Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs'. Microelectronic Engineering, 88 (7) [Details]
(2003)'Improving the accuracy and efficiency of junction capacitance characterization: Strategies for probing configuration and data set size'
MacSweeney, D,McCarthy, KG,Floyd, L,Duane, R,Hurley, P,Power, JA,Kelly, SC,Mathewson, A (2003) 'Improving the accuracy and efficiency of junction capacitance characterization: Strategies for probing configuration and data set size'. IEEE Transactions on Semiconductor Manufacturing, 16 :207-214 [DOI] [Details]
(1994)'EVALUATION OF HOT-CARRIER DEGRADATION OF N-CHANNEL MOSFETS AT LOW GATE BIAS'
MEEHAN, A,OSULLIVAN, P,HURLEY, P,MATHEWSON, A; (1994) 'EVALUATION OF HOT-CARRIER DEGRADATION OF N-CHANNEL MOSFETS AT LOW GATE BIAS'. Microelectronics Journal, 25 :463-467 [Details]
(2008)'Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films'
Farrell RA, Petkov, N; Cherkaoui K, Hurley P, Amenitsch H, Holmes JD and Morris MA; (2008) 'Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films'. Chem. Phys. Chem, 9 [Details]
(2008)'Thin and continuous films with controlled bi- and tri-modal porosities by embedment of zeolite nanoparticles in a mesoporous matrix'
Farrell RA, Petkov, N; Cherkaoui K, Hurley P, Amenitsch H, Holmes JD and Morris MA; (2008) 'Thin and continuous films with controlled bi- and tri-modal porosities by embedment of zeolite nanoparticles in a mesoporous matrix'. J. Mat. Chem, 18 [Details]
(2007)'Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films'
Farrell, R. A.,Cherkaoui, K.,Petkov, N.,Amenitsch, H.,Holmes, J. D.,Hurley, P. K.,Morris, M. A.; (2007) 'Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films'. Microelectronics Reliability, 47 (4-5):759-763 Globe icon [Details]
(2008)'Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films'
Farrell, R. A.,Petkov, N.,Cherkaoui, K.,Amenitsch, H.,Holmes, J. D.,Hurley, P. K.,Morris, M. A.; (2008) 'Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films'. Chemphyschem, 9 (11):1524-7 Globe icon [Details]
(1995)'Capacitance-Voltage Characteristics of Heavily Doped Silicon-Insulator-Silicon Capacitors [B2669]'
Hurley, P. K.; Wall, L.; Moran, S.; Mathewson, A.; (1995) 'Capacitance-Voltage Characteristics of Heavily Doped Silicon-Insulator-Silicon Capacitors [B2669]'. Semiconductor Science and Technology, 10.2 :190-196 [Details]
(1996)'Impact of Oxide Degradation on the Low Frequency (1/f) Noise Behaviour of p Channel MO'SFETs [B2671]'
Hurley, P. K.; Sheehan, E.; Moran, S.; Mathewson, A.; (1996) 'Impact of Oxide Degradation on the Low Frequency (1/f) Noise Behaviour of p Channel MO'SFETs [B2671]'. Microelectronics and Reliability, 36.11/12 :1679-1682 [Details]
(2003)'Improving the Accuracy and Efficiency of Junction Capacitance Characterization: Strategies for Probing Configuration and Data Set Size'
MacSweeney,D.; McCarthy,K.G.; Floyd,L.; Duane,R.; Hurley, P.; Power, J.A.; Kelly, S.C.; Mathewson, A.; (2003) 'Improving the Accuracy and Efficiency of Junction Capacitance Characterization: Strategies for Probing Configuration and Data Set Size'. IEEE Transactions on Semiconductor Manufacturing, 16 (2):207-214 [Details]
(1995)'HOT-CARRIER RELIABILITY LIFETIMES AS PREDICTED BY BERKELEYS MODEL'
MEEHAN, A,OSULLIVAN, P,HURLEY, P,MATHEWSON, A (1995) 'HOT-CARRIER RELIABILITY LIFETIMES AS PREDICTED BY BERKELEYS MODEL'. Quality and Reliability Engineering International, 11 :269-272 [Details]
(2012)'Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?'
Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K. (2012) 'Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?'. Electrochemical Society Transactions, 45 (3):79-88 [DOI] [Details]
(2013)'An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors'
Lin, J., Gomeniuk, Y.Y., Monaghan, S., Povey, I.M., Cherkaoui, K., O'Connor, É., Power, M., Hurley, P.K. (2013) 'An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors'. Journal of Applied Physics, 114 (14) [DOI] [Details]
(2008)'Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al(2)O(3) and HfO(2)'
Afanas'ev, V. V.,Badylevich, M.,Stesmans, A.,Brammertz, G.,Delabie, A.,Sionke, S.,O'Mahony, A.,Povey, I. M.,Pemble, M. E.,O'Connor, E.,Hurley, P. K.,Newcomb, S. B. (2008) 'Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al(2)O(3) and HfO(2)'. Applied Physics Letters, 93 (2121) Globe icon [Details]
(2013)'Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors'
Miranda, E. and Jiménez, D. and Suñé, J. and O'Connor, E. and Monaghan, S. and Povey, I. and Cherkaoui, K. and Hurley, P.K. (2013) 'Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors'. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 31 (1) Globe icon [CORA Link] [Details]
(2013)'Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors'
Monaghan, S. and O'Connor, E. and Povey, I.M. and Sheehan, B.J. and Cherkaoui, K. and Hutchinson, B.J.A. and Hurley, P.K. and Ferdousi, F. and Rios, R. and Kuhn, K.J. and Rahman, A. (2013) 'Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors'. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 31 (1) Globe icon [Details]
(2011)'Electrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs'
Gomeniuk, Y.Y.a and Gomeniuk, Y.V.a and Nazarov, A.N.a and Hurley, P.K.b and Cherkaoui, K.b and Monaghan, S.b and Hellström, P.-E.c and Gottlob, H.D.B.d and Schubert, J.e and Lopes, J.M.J.e (2011) 'Electrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs'. Advanced Materials Research, 276 :87-93 Globe icon [Details]
(1996)'Effects of Fowler-Nordheim stress on interface trap density and emission cross sections in n-MOSFET's studied by three-level charge pumping'
Yuan, XJ,Kivi, M,Taylor, S,Hurley, P; (1996) 'Effects of Fowler-Nordheim stress on interface trap density and emission cross sections in n-MOSFET's studied by three-level charge pumping'. IEEE Electron Device Letters, 17 :239-241 [Details]
(2013)'Chemical and electrical characterization of the HfO2/InAlAs interface'
Brennan, B. and Galatage, R. V. and Thomas, K. and Pelucchi, E. and Hurley, P. K. and Kim, J. and Hinkle, C. L. and Vogel, E. M. and Wallace, R. M. (2013) 'Chemical and electrical characterization of the HfO2/InAlAs interface'. Journal of Applied Physics, 114 (10) [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2008)'In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric'
O'Connor, E.,Long, R. D.,Cherkaoui, K.,Thomas, K. K.,Chalvet, F.,Povey, I. M.,Pemble, M. E.,Hurley, P. K.,Brennan, B.,Hughes, G.,Newcomb, S. B. (2008) 'In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric'. Applied Physics Letters, 92 (22) Globe icon [Details]
(2009)'Band offsets at interfaces of (100)InxGa1-xAs (0 <= x <= 0.53) with Al2O3 and HfO2'
Afanas'ev, V. V.,Stesmans, A.,Brammertz, G.,Delabie, A.,Sionke, S.,O'Mahony, A.,Povey, I. M.,Pemble, M. E.,O'Connor, E.,Hurley, P. K.,Newcomb, S. B. (2009) 'Band offsets at interfaces of (100)InxGa1-xAs (0 <= x <= 0.53) with Al2O3 and HfO2'. Microelectronic Engineering, 86 (7-97-9):1550-15531550 Globe icon [Details]
(2009)'Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2'
Afanas'ev, V. V.,Stesmans, A.,Brammertz, G.,Delabie, A.,Sionke, S.,O'Mahony, A.,Povey, I. M.,Pemble, M. E.,O'Connor, E.,Hurley, P. K.,Newcomb, S. B. (2009) 'Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2'. Applied Physics Letters, 94 (2020) Globe icon [Details]
(2011)'Electrical analysis of three-stage passivated In(0.53)Ga(0.47)As capacitors with varying HfO(2) thicknesses and incorporating an Al(2)O(3) interface control layer'
Monaghan, S. and O'Mahony, A. and Cherkaoui, K. and O'Connor, E. and Povey, I. M. and Nolan, M. G. and O'Connell, D. and Pemble, M. E. and Hurley, P. K. and Provenzano, G. and Crupi, F. and Newcomb, S. B. (2011) 'Electrical analysis of three-stage passivated In(0.53)Ga(0.47)As capacitors with varying HfO(2) thicknesses and incorporating an Al(2)O(3) interface control layer'. Journal of Vacuum Science & Technology B, 29 (1) [Details]
(2012)'Impact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric'
Djara, V. and Cherkaoui, K. and Schmidt, M. and Monaghan, S. and O'Connor, É. and Povey, I.M. and O'Connell, D. and Pemble, M.E. and Hurley, P.K. (2012) 'Impact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric'. IEEE Transactions on Electron Devices, 59 (4):1084-1090 Globe icon [Details]
(2009)'TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications'
Monaghan, S. and Cherkaoui, K. and O'Connor, É. and Djara, V. and Hurley, P.K. and Oberbeck, L. and Tois, E. and Wilde, L. and Teichert, S. (2009) 'TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications'. IEEE Electron Device Letters, 30 (3):219-221 Globe icon [Details]
(2011)'Transport and interface states in high-κ LaSiO x dielectric'
Gomeniuk, Y.Y. and Gomeniuk, Y.V. and Tyagulskii, I.P. and Tyagulskii, S.I. and Nazarov, A.N. and Lysenko, V.S. and Cherkaoui, K. and Monaghan, S. and Hurley, P.K. (2011) 'Transport and interface states in high-κ LaSiO x dielectric'. Microelectronic Engineering, 88 (7):1342-1345 Globe icon [Details]
(2011)'A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As/InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers'
O'Connor, É. and Brennan, B. and Djara, V. and Cherkaoui, K. and Monaghan, S. and Newcomb, S.B. and Contreras, R. and Milojevic, M. and Hughes, G. and Pemble, M.E. and Wallace, R.M. and Hurley, P.K. (2011) 'A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As/InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers'. Journal of Applied Physics, 109 (2) Globe icon [Details]
(2011)'Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric'
O'Connor, É., Djara, V., Monaghan, S., Hurley, P.K., Cherkaoui, K. (2011) 'Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric'. Electrochemical Society Transactions, 35 (3):415-430 [DOI] [Details]
(2010)'Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer'
O'Mahony, A., Monaghan, S., Provenzano, G., Povey, I. M., Nolan, M. G., O'Connor, E., Cherkaoui, K., Newcomb, S. B., Crupi, F., Hurley, P. K., Pemble, M. E (2010) 'Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer'. Applied Physics Letters, 97 (5):052904-1-052904-3 [DOI] [Details]
(2009)'Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers'
Miranda, E., O'Connor, E., Hughes, G., Casey, P., Cherkaoui, K., Monaghan, S., Long, R.D., O'Connell, D., Hurley, P.K. (2009) 'Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers'. Electrochemical Society Transactions, 25 (6):79-86 [DOI] [Details]
(2010)'Electrical properties of LaLuO 3/Si(100) structures prepared by molecular beam deposition'
Gomeniuk, Y.Y., Gomeniuk, Y.V., Nazarov, A.N., Hurley, P.K., Cherkaoui, K., Monaghan, S., Gottlob, H.D.B., Schmidt, M., Schubert, J., Lopes, J.M.J., Engström, O. (2010) 'Electrical properties of LaLuO 3/Si(100) structures prepared by molecular beam deposition'. Electrochemical Society Transactions, 33 (3):221-227 [Details]
(2012)'On the activation of implanted silicon ions in p-In0.53Ga0.47As'
Djara, V. and Cherkaoui, K. and Newcomb, S. B. and Thomas, K. and Pelucchi, E. and O'Connell, D. and Floyd, L. and Dimastrodonato, V. and Mereni, L. O. and Hurley, P. K. (2012) 'On the activation of implanted silicon ions in p-In0.53Ga0.47As'. Semiconductor Science and Technology, 27 (8) [Details]
(2014)'Diffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing'
Cabrera, W and Brennan, B and Dong, H and O'Regan, TP and Povey, IM and Monaghan, S and O'Connor, \'E and Hurley, PK and Wallace, RM and Chabal, YJ (2014) 'Diffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing'. Applied Physics Letters, 104 (1) [Details]
(2009)'Energy barriers at interfaces between (100) InxGa1- xAs (0= x= 0.53) and atomic-layer deposited Al2O3 and HfO2'
Afanas’ev, VV and Stesmans, Andre and Brammertz, G and Delabie, Annelies and Sionke, S and O’Mahony, A and Povey, IM and Pemble, ME and O’Connor, E and Hurley, PK and others (2009) 'Energy barriers at interfaces between (100) InxGa1- xAs (0= x= 0.53) and atomic-layer deposited Al2O3 and HfO2'. Applied Physics Letters, 94 (20) [Details]
(2009)'Energy barriers at interfaces between (100) InxGa1- xAs (0= x= 0.53) and atomic-layer deposited Al2O3 and HfO2'
Afanas’ev, VV and Stesmans, Andre and Brammertz, G and Delabie, Annelies and Sionke, S and O’Mahony, A and Povey, IM and Pemble, ME and O’Connor, E and Hurley, PK and others (2009) 'Energy barriers at interfaces between (100) InxGa1- xAs (0= x= 0.53) and atomic-layer deposited Al2O3 and HfO2'. Applied Physics Letters, 94 (20) [Details]
(2009)'Band offsets at interfaces of (100) In< i> x Ga< sub> 1-< i> x As (0¿< i> x¿ 0.53) with Al< sub> 2 O< sub> 3 and HfO< sub> 2'
Afanas’ev, VV and Stesmans, Andre and Brammertz, G and Delabie, Annelies and Sionke, S and O’Mahony, A and Povey, IM and Pemble, ME and O’Connor, E and Hurley, PK and others (2009) 'Band offsets at interfaces of (100) In< i> x Ga< sub> 1-< i> x As (0¿< i> x¿ 0.53) with Al< sub> 2 O< sub> 3 and HfO< sub> 2'. Microelectronic Engineering, 86 (7):1550-1553 [Details]
(2004)'Electrical evaluation of defects at the Si(100)/HfO2 interface'
O'Sullivan, B. J.,Hurley, P. K.,O'Connor, E.,Modreanu, M.,Roussel, H.,Jimenez, C.,Dubourdieu, C.,Audier, M.,Senateur, J. P. (2004) 'Electrical evaluation of defects at the Si(100)/HfO2 interface'. Journal of the Electrochemical Society, 151 (88) Globe icon [Details]
(2009)'TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications'
Monaghan, S,Cherkaoui, K,O'Connor, E,Djara, V,Hurley, PK,Oberbeck, L,Tois, E,Wilde, L,Teichert, S; (2009) 'TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications'. IEEE Electron Device Letters, 30 :219-221 [DOI] [Details]
(2000)'Ultraviolet assisted injection liquid source chemical vapour deposition (UVILS-CVD) of tantalum pentoxide'
Kelly, PV,Mooney, MB,Beechinor, JT,O'Sullivan, BJ,Hurley, PK,Crean, GM,Zhang, JY,Boyd, IW,Paillous, M,Jimenez, C,Senateur, JP; (2000) 'Ultraviolet assisted injection liquid source chemical vapour deposition (UVILS-CVD) of tantalum pentoxide'. Advanced Materials, 10 :115-122 [Details]
(2005)'Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD'
Decams, J. M.,Guillon, H.,Jimenez, C.,Audier, M.,Senateur, J. P.,Dubourdieu, C.,Cadix, O.,O'Sullivan, B. J.,Modreanu, M.,Hurley, P. K.,Rusworth, S.,Leedham, T. J.,Davies, H.,Fang, Q.,Boyd, I. (2005) 'Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD'. Microelectronics Reliability, 45 (5-65-6):929-932 Globe icon [Details]
(2008)'Electrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation'
Cherkaoui, K.,Monaghan, S.,Negara, M. A.,Modreanu, M.,Hurley, P. K.,O'Connell, D.,McDonnell, S.,Hughes, G.,Wright, S.,Barklie, R. C.,Bailey, P.,Noakes, T. C. Q. (2008) 'Electrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation'. Journal of Applied Physics, 104 (66) Globe icon [Details]
(2011)'A systematic study of (NH4) 2S passivation (22\%, 10\%, 5\%, or 1\%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers'
O’Connor, \'E and Brennan, B and Djara, V and Cherkaoui, K and Monaghan, S and Newcomb, SB and Contreras, R and Milojevic, M and Hughes, G and Pemble, ME and others (2011) 'A systematic study of (NH4) 2S passivation (22\%, 10\%, 5\%, or 1\%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers'. Journal of Applied Physics, 109 (2) [Details]
(2008)'Energy barriers at interfaces of (100) GaAs with atomic layer deposited Al 2 O 3 and HfO 2'
Afanasev, VV and Badylevich, Mikhail and Stesmans, Andre and Brammertz, Guy and Delabie, Annelies and Sionke, S and OMahony, A and Povey, IM and Pemble, ME and OConnor, E and others (2008) 'Energy barriers at interfaces of (100) GaAs with atomic layer deposited Al 2 O 3 and HfO 2'. Applied Physics Letters, 93 (21):212104-212104 [Details]
(2014)'Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing'
Cabrera, W,Brennan, B,Dong, H,O'Regan, TP,Povey, IM,Monaghan, S,O'Connor, E,Hurley, PK,Wallace, RM,Chabal, YJ (2014) 'Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing'. Applied Physics Letters, 104 [DOI] [Details]
(2013)'An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors'
Lin, J,Gomeniuk, YY,Monaghan, S,Povey, IM,Cherkaoui, K,O'Connor, E,Power, M,Hurley, PK (2013) 'An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors'. Journal of Applied Physics, 114 [DOI] [Details]
(2013)'The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System'
Hurley, PK,O'Connor, E,Djara, V,Monaghan, S,Povey, IM,Long, RD,Sheehan, B,Lin, J,McIntyre, PC,Brennan, B,Wallace, RM,Pemble, ME,Cherkaoui, K (2013) 'The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System'. IEEE Transactions on Device and Materials Reliability, 13 :429-443 [DOI] [Details]
(2012)'Impact of Forming Gas Annealing on the Performance of Surface-Channel In0.53Ga0.47As MOSFETs With an ALD Al2O3 Gate Dielectric'
Djara, V,Cherkaoui, K,Schmidt, M,Monaghan, S,O'Connor, E,Povey, IM,O'Connell, D,Pemble, ME,Hurley, PK (2012) 'Impact of Forming Gas Annealing on the Performance of Surface-Channel In0.53Ga0.47As MOSFETs With an ALD Al2O3 Gate Dielectric'. IEEE Transactions On Electron Devices, 59 :1084-1090 [DOI] [Details]
(2012)'A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures'
Walsh, LA,Hughes, G,Hurley, PK,Lin, J,Woicik, JC (2012) 'A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures'. Applied Physics Letters, 101 [DOI] [Details]
(2011)'Investigation of bulk defects in amorphous and crystalline HfO2 thin films'
Modreanu, M, Monaghan, S, Povey, IM, Cherkaoui, K, Hurley, PK, Androulidaki, M (2011) 'Investigation of bulk defects in amorphous and crystalline HfO2 thin films'. Microelectronic Engineering, 88 (7):1499-1502 [DOI] [Details]
(2011)'Investigation of bulk defects in amorphous and crystalline HfO2 thin films'
Modreanu, M, Monaghan, S, Povey, IM, Cherkaoui, K, Hurley, PK, Androulidaki, M (2011) 'Investigation of bulk defects in amorphous and crystalline HfO2 thin films'. Microelectronic Engineering, 88 (7):1499-1502 [DOI] [Details]
(2010)'Electron energy band alignment at the (100)Si/MgO interface'
Afanas'ev, VV,Stesmans, A,Cherkaoui, K,Hurley, PK; (2010) 'Electron energy band alignment at the (100)Si/MgO interface'. Applied Physics Letters, 96 [DOI] [Details]
(2010)'Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections'
O'Regan, TP,Hurley, PK,Soree, B,Fischetti, MV; (2010) 'Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections'. Applied Physics Letters, 96 [DOI] [Details]
(2010)'Electron band alignment between (100)InP and atomic-layer deposited Al2O3'
Chou, HY,Afanas'ev, VV,Stesmans, A,Lin, HC,Hurley, PK,Newcomb, SB; (2010) 'Electron band alignment between (100)InP and atomic-layer deposited Al2O3'. Applied Physics Letters, 97 [DOI] [Details]
(2009)'Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2o Oxidation of Al2o3 On In0.53ga0.47as'
Brennan, B, Milojevic, M, Kim, HC, Hurley, PK, Kim, J, Hughes, G, Wallace, RM; (2009) 'Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2o Oxidation of Al2o3 On In0.53ga0.47as'. Electrochemical and Solid State Letters, 12 (6):205-207 [DOI] [Details]
(2009)'Electrical characterization of the soft breakdown failure mode in MgO layers'
Miranda, E, O'Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK, Hughes, G, Casey, P (2009) 'Electrical characterization of the soft breakdown failure mode in MgO layers'. Applied Physics Letters, 95 (1):012901-1-012901-3 [DOI] [Details]
(2009)'Electrical Characterization of The Soft Breakdown Failure Mode In Mgo Layers'
Miranda, E, O'Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK, Hughes, G, Casey, P; (2009) 'Electrical Characterization of The Soft Breakdown Failure Mode In Mgo Layers'. Applied Physics Letters, 95 (1) [DOI] [Details]
(2009)'TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors with Subnanometer CET using ALD-Deposited ZrO2 for DRAM Applications'
Monaghan, S, Cherkaoui, K, O'Connor, E, Djara, V, Hurley, PK, Oberbeck, L, Tois, E, Wilde, L, Teichert, S; (2009) 'TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors with Subnanometer CET using ALD-Deposited ZrO2 for DRAM Applications'. IEEE Electron Device Letters, 30 (3):219-221 [DOI] [Details]
(2009)'Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2O Oxidation of Al2O3 on In0.53Ga0.47As'
Brennan, B,Milojevic, M,Kim, HC,Hurley, PK,Kim, J,Hughes, G,Wallace, RM; (2009) 'Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2O Oxidation of Al2O3 on In0.53Ga0.47As'. Electrochemical and Solid State Letters, 12 :205-207 [DOI] [Details]
(2009)'Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge'
Negara, MA,Cherkaoui, K,Hurley, PK,Young, CD,Majhi, P,Tsai, W,Bauza, D,Ghibaudo, G; (2009) 'Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge'. Journal of Applied Physics, 105 [DOI] [Details]
(2009)'Temperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods'
O'Connor, E, Monaghan, S, Long, RD, O'Mahony, A, Povey, IM, Cherkaoui, K, Pemble, ME, Brammertz, G, Heyns, M, Newcomb, SB, Afanas'ev, VV, Hurley, PK; (2009) 'Temperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods'. Applied Physics Letters, 94 (10) [DOI] [Details]
(2008)'Energy Barriers At Interfaces of (100)Gaas With Atomic Layer Deposited Al2o3 and Hfo2'
Afanas'ev, VV, Badylevich, M, Stesmans, A, Brammertz, G, Delabie, A, Sionke, S, O'Mahony, A, Povey, IM, Pemble, ME, O'Connor, E, Hurley, PK, Newcomb, SB; (2008) 'Energy Barriers At Interfaces of (100)Gaas With Atomic Layer Deposited Al2o3 and Hfo2'. Applied Physics Letters, 93 (21) [DOI] [Details]
(2008)'In Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric'
O'Connor, E, Long, RD, Cherkaoui, K, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK, Brennan, B, Hughes, G, Newcomb, SB; (2008) 'In Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric'. Applied Physics Letters, 92 (2) [DOI] [Details]
(2008)'High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy'
Raeissi, B,Piscator, J,Engstrom, O,Hall, S,Buiu, O,Lemme, MC,Gottlob, HDB,Hurley, PK,Cherkaoui, K,Osten, HJ; (2008) 'High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy'. Solid-State Electronics, 52 :1274-1279 [DOI] [Details]
(2008)'Facile and Controlled Synthesis of Ultra-Thin Low Dielectric Constant Meso/Microporous Silica Films'
Farrell, RA, Petkov, N, Cherkaoui, K, Amenitsch, H, Holmes, JD, Hurley, PK, Morris, MA; (2008) 'Facile and Controlled Synthesis of Ultra-Thin Low Dielectric Constant Meso/Microporous Silica Films'. Chemphyschem, 9 (11):1524-1527 [DOI] [Details]
(2008)'Energy State Distributions of The P-B Centers At The (100), (110), and (111) Si/Sio2 Interfaces Investigated By Laplace Deep Level Transient Spectroscopy'
Dobaczewski, L, Bernardini, S, Kruszewski, P, Hurley, PK, Markevich, VP, Hawkins, ID, Peaker, AR; (2008) 'Energy State Distributions of The P-B Centers At The (100), (110), and (111) Si/Sio2 Interfaces Investigated By Laplace Deep Level Transient Spectroscopy'. Applied Physics Letters, 92 (24) [DOI] [Details]
(2001)'XPS investigation of UV-annealed ultrathin Ta(2)O(5) films on silicon'
Fang, Q,Zhang, JY,Wang, ZM,Wu, JX,O'Sullivan, BJ,Hurley, PK,Leedham, TL,Audier, MA,Senateur, JP,Boyd, IW (2001) 'XPS investigation of UV-annealed ultrathin Ta(2)O(5) films on silicon'. Journal De Physique Iv, 11 :301-305 [Details]
(2001)'Photo-CVD deposited TiO(2) films studied by Raman and XPS spectroscopy'
Zhang, JY,Fang, Q,Wu, JX,Xu, CY,O'Sullivan, BJ,Hurley, PK,Leedham, TL,Audier, MA,Senateur, JP,Boyd, IW (2001) 'Photo-CVD deposited TiO(2) films studied by Raman and XPS spectroscopy'. Journal De Physique Iv, 11 :295-299 [Details]
(2000)'Thin tantalum pentoxide films deposited by photo-induced chemical vapor deposition using an injection liquid source'
Zhang, JY,Boyd, IW,Mooney, MB,Hurley, PK,Beechinor, JT,O'Sullivan, BJ,Kelly, PV,Crean, GM,Senateur, JP,Jimenez, C,Paillous, M; (2000) 'Thin tantalum pentoxide films deposited by photo-induced chemical vapor deposition using an injection liquid source'. Applied Physics Part A: Materials Science & Processing, 70 :647-649 [Details]
(2013)'Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure'
Gomeniuk, YY and Gomeniuk, YV and Nazarov, AN and Monaghan, S and Cherkaoui, K and O'Connor, \'E and Povey, I and Djara, V and Hurley, PK (2013) 'Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure'. ECS Transactions, 58 (7):379-384 [Details]
(2008)'In situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric'
OConnor, E and Long, RD and Cherkaoui, K and Thomas, KK and Chalvet, F and Povey, IM and Pemble, ME and Hurley, PK and Brennan, B and Hughes, G and others (2008) 'In situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric'. Applied Physics Letters, 92 (2):022902-022902 [Details]
(2003)'SPECIAL SECTION ON THE INTERNATIONAL CONFERENCE ON MICROELECTRONICS TEST STRUCTURES-SPECIAL SECTION PAPERS-Improving the Accuracy and Efficiency of Junction Capacitance Characterization'
MacSweeney, D and McCarthy, KG and Floyd, L and Duane, R and Hurley, P and Power, JA and Kelly, SC and Mathewson, A (2003) 'SPECIAL SECTION ON THE INTERNATIONAL CONFERENCE ON MICROELECTRONICS TEST STRUCTURES-SPECIAL SECTION PAPERS-Improving the Accuracy and Efficiency of Junction Capacitance Characterization'. IEEE Transactions on Semiconductor Manufacturing, 16 (2):207-214 [Details]
(2014)'Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers'
Gajula, D.R. and Baine, P. and Modreanu, M. and Hurley, P.K. and Armstrong, B.M. and McNeill, D.W. (2014) 'Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers'. Applied Physics Letters, 104 (1) Globe icon [Details]
(2014)'Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers'
Gajula, D.R. and Baine, P. and Modreanu, M. and Hurley, P.K. and Armstrong, B.M. and McNeill, D.W. (2014) 'Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers'. Applied Physics Letters, 104 (1) Globe icon [Details]
(2014)'A spectroscopic method for the evaluation of surface passivation treatments on metal-oxide-semiconductor structures'
Walsh, LA,Hurley, PK,Lin, J,Cockayne, E,O'Regan, TP,Woicik, JC,Hughes, G (2014) 'A spectroscopic method for the evaluation of surface passivation treatments on metal-oxide-semiconductor structures'. Applied Surface Science, 301 :40-45 [DOI] [Details]
(2013)'Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors'
Monaghan, S,O'Connor, E,Povey, IM,Sheehan, BJ,Cherkaoui, K,Hutchinson, BJA,Hurley, PK,Ferdousi, F,Rios, R,Kuhn, KJ,Rahman, A (2013) 'Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors'. Journal of Vacuum Science & Technology B, 31 [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X,Sune, J,Monaghan, S,Hurley, PK,Miranda, E (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 [DOI] [Details]
(2010)'Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer'
O'Mahony, A,Monaghan, S,Provenzano, G,Povey, IM,Nolan, MG,O'Connor, E,Cherkaoui, K,Newcomb, SB,Crupi, F,Hurley, PK,Pemble, ME; (2010) 'Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer'. Applied Physics Letters, 97 [DOI] [Details]
(2003)'Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices'
Modreanu, M.,Gartner, A.,Aperathitis, E.,Tomozeiu, N.,Androulidaki, M.,Cristea, D.,Hurley, P. (2003) 'Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices'. Physica E-Low-Dimensional Systems & Nanostructures, 16 (3-43-4):461-466 Globe icon [Details]
(2005)'Post deposition UV-induced O(2) annealing of HfO(2) thin films'
Fang, Q.,Liaw, I.,Modreanu, M.,Hurley, P. K.,Boyd, I. W. (2005) 'Post deposition UV-induced O(2) annealing of HfO(2) thin films'. Microelectronics Reliability, 45 (5-65-6):957-960 Globe icon [Details]
(2004)'Interface of ultrathin HfO2 films deposited by UV-photo-CVD'
Fang, Q.,Zhang, J. Y.,Wang, Z.,Modreanu, M.,O'Sullivan, B. J.,Hurley, P. K.,Leedham, T. L.,Hywel, D.,Audier, M. A.,Jimenez, C.,Senateur, J. P.,Boyd, I. W. (2004) 'Interface of ultrathin HfO2 films deposited by UV-photo-CVD'. Thin Solid Films, 453 :203-207 Globe icon [Details]
(2014)'A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures'
Lin, J,Walsh, L,Hughes, G,Woicik, JC,Povey, IM,O'Regan, TP,Hurley, PK (2014) 'A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures'. Journal of Applied Physics, 116 [DOI] [Details]
(2013)'Electrically active interface defects in the In< sub> 0.53 Ga< sub> 0.47 As MOS system'
Djara, V and O’Regan, TP and Cherkaoui, K and Schmidt, M and Monaghan, S and O’Connor, \'E and Povey, IM and O’Connell, D and Pemble, ME and Hurley, PK (2013) 'Electrically active interface defects in the In< sub> 0.53 Ga< sub> 0.47 As MOS system'. Microelectronic Engineering, 109 :182-188 [Details]
(2013)'Chemical and electrical characterization of the HfO2/InAlAs interface'
Brennan, B,Galatage, RV,Thomas, K,Pelucchi, E,Hurley, PK,Kim, J,Hinkle, CL,Vogel, EM,Wallace, RM (2013) 'Chemical and electrical characterization of the HfO2/InAlAs interface'. Journal of Applied Physics, 114 [DOI] [Details]
(2013)'Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/Al2O3/GaAs(100) metal-oxide-semiconductor structures'
Walsh, LA,Hughes, G,Lin, J,Hurley, PK,O'Regan, TP,Cockayne, E,Woicik, JC (2013) 'Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/Al2O3/GaAs(100) metal-oxide-semiconductor structures'. Physical Review B, 88 [DOI] [Details]
(2013)'Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress'
Saura, X,Moix, D,Sune, J,Hurley, PK,Miranda, E (2013) 'Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress'. Microelectronics Reliability, 53 :1257-1260 [DOI] [Details]
(2013)'Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors'
Miranda, E,Jimenez, D,Sune, J,O'Connor, E,Monaghan, S,Povey, I,Cherkaoui, K,Hurley, PK (2013) 'Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors'. Journal of Vacuum Science & Technology B, 31 [DOI] [Details]
(2013)'Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs'
Negara, MA,Djara, V,O'Regan, TP,Cherkaoui, K,Burke, M,Gomeniuk, YY,Schmidt, M,O'Connor, E,Povey, IM,Quinn, AJ,Hurley, PK (2013) 'Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs'. Solid-State Electronics, 88 :37-42 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V,O'Regan, TP,Cherkaoui, K,Schmidt, M,Monaghan, S,O'Connor, E,Povey, IM,O'Connell, D,Pemble, ME,Hurley, PK (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2012)'Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates'
O'Connor, E,Cherkaoui, K,Monaghan, S,O'Connell, D,Povey, I,Casey, P,Newcomb, SB,Gomeniuk, YY,Provenzano, G,Crupi, F,Hughes, G,Hurley, PK (2012) 'Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates'. Journal of Applied Physics, 111 (12):124104-1-124104-7 [DOI] [Details]
(2012)'Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011)'
Long, RD,Shin, B,Monaghan, S,Cherkaoui, K,Cagnon, J,Stemmer, S,McIntyre, PC,Hurley, PK (2012) 'Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011)'. Journal of the Electrochemical Society, 159 :17-17 [DOI] [Details]
(2012)'Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3'
Chou, HY,O'Connor, E,Hurley, PK,Afanas'ev, VV,Houssa, M,Stesmans, A,Ye, PD,Newcomb, SB (2012) 'Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3'. Applied Physics Letters, 100 [DOI] [Details]
(2012)'On the activation of implanted silicon ions in p-In0.53Ga0.47As'
Djara, V,Cherkaoui, K,Newcomb, SB,Thomas, K,Pelucchi, E,O'Connell, D,Floyd, L,Dimastrodonato, V,Mereni, LO,Hurley, PK (2012) 'On the activation of implanted silicon ions in p-In0.53Ga0.47As'. Semiconductor Science and Technology, 27 [DOI] [Details]
(2011)'Transport and interface states in high-kappa LaSiOx dielectric'
Gomeniuk, YY,Gomeniuk, YV,Tyagulskii, IP,Tyagulskii, SI,Nazarov, AN,Lysenko, VS,Cherkaoui, K,Monaghan, S,Hurley, PK (2011) 'Transport and interface states in high-kappa LaSiOx dielectric'. Microelectronic Engineering, 88 :1342-1345 [DOI] [Details]
(2011)'On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors'
Sonnet, AM,Galatage, RV,Hurley, PK,Pelucchi, E,Thomas, KK,Gocalinska, A,Huang, J,Goel, N,Bersuker, G,Kirk, WP,Hinkle, CL,Wallace, RM,Vogel, EM (2011) 'On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors'. Applied Physics Letters, 98 [DOI] [Details]
(2011)'In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition'
Milojevic, M,Contreras-Guerrero, R,O'Connor, E,Brennan, B,Hurley, PK,Kim, J,Hinkle, CL,Wallace, RM; (2011) 'In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition'. Applied Physics Letters, 99 [DOI] [Details]
(2011)'A systematic study of (NH4)(2)S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers'
O'Connor, E, Brennan, B, Djara, V, Cherkaoui, K, Monaghan, S, Newcomb, SB, Contreras, R, Milojevic, M, Hughes, G, Pemble, ME, Wallace, RM, Hurley, PK; (2011) 'A systematic study of (NH4)(2)S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers'. Journal of Applied Physics, 109 (2):024101-1-024101-10 [DOI] [Details]
(2011)'Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application'
Benedicto, M, Galiana, B, Molina-Aldareguia, JM, Monaghan, S, Hurley, PK, Cherkaoui, K, Vazquez, L, Tejedor, P; (2011) 'Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application'. Nanoscale Research Letters, 6 (400):1-6 [DOI] [Details]
(2011)'Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors'
Negara, MA,Veksler, D,Huang, J,Ghibaudo, G,Hurley, PK,Bersuker, G,Goel, N,Kirsch, P (2011) 'Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors'. Applied Physics Letters, 99 [DOI] [Details]
(2011)'Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer'
Monaghan, S,O'Mahony, A,Cherkaoui, K,O'Connor, E,Povey, IM,Nolan, MG,O'Connell, D,Pemble, ME,Hurley, PK,Provenzano, G,Crupi, F,Newcomb, SB; (2011) 'Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer'. Journal of Vacuum Science & Technology B, 29 (1):01A8071-01A8078 [DOI] [Details]
(2011)'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)(2)S treatment'
O'Connor, E,Monaghan, S,Cherkaoui, K,Povey, IM,Hurley, PK (2011) 'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)(2)S treatment'. Applied Physics Letters, 99 [DOI] [Details]
(2011)'Multi-technique characterisation of MOVPE-grown GaAs on Si'
Wong, CS,Bennett, NS,McNally, PJ,Galiana, B,Tejedor, P,Benedicto, M,Molina-Aldareguia, JM,Monaghan, S,Hurley, PK,Cherkaoui, K (2011) 'Multi-technique characterisation of MOVPE-grown GaAs on Si'. Microelectronic Engineering, 88 (4):472-475 [DOI] [Details]
(2011)'Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures'
O'Regan, TP,Hurley, PK (2011) 'Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures'. Applied Physics Letters, 99 [DOI] [Details]
(2010)'Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells'
Young, RJ,Mereni, LO,Petkov, N,Knight, GR,Dimastrodonato, V,Hurley, PK,Hughes, G,Pelucchi, E; (2010) 'Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells'. Journal of Crystal Growth, 312 :1546-1550 [DOI] [Details]
(2008)'Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation'
Cherkaoui, K,Monaghan, S,Negara, MA,Modreanu, M,Hurley, PK,O'Connell, D,McDonnell, S,Hughes, G,Wright, S,Barklie, RC,Bailey, P,Noakes, TCQ; (2008) 'Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation'. Journal of Applied Physics, 104 (6):064113-1-064113-10 [DOI] [Details]
(2009)'Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001)'
Shin, B,Cagnon, J,Long, RD,Hurley, PK,Stemmer, S,McIntyre, PC; (2009) 'Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001)'. Electrochemical and Solid State Letters, 12 :40-43 [DOI] [Details]
(2009)'Energy Barriers At Interfaces Between (100) Inxga1-Xas (0 &Lt;= X &Lt;= 0.53) and Atomic-Layer Deposited Al2o3 and Hfo2'
Afanas'ev, VV, Stesmans, A, Brammertz, G, Delabie, A, Sionke, S, O'Mahony, A, Povey, IM, Pemble, ME, O'Connor, E, Hurley, PK, Newcomb, SB; (2009) 'Energy Barriers At Interfaces Between (100) Inxga1-Xas (0 &Lt;= X &Lt;= 0.53) and Atomic-Layer Deposited Al2o3 and Hfo2'. Applied Physics Letters, 94 (20) [DOI] [Details]
(2009)'Analysis of Electron Mobility In Hfo2/Tin Gate Metal-Oxide-Semiconductor Field Effect Transistors: The Influence of Hfo2 Thickness, Temperature, and Oxide Charge'
Negara, MA, Cherkaoui, K, Hurley, PK, Young, CD, Majhi, P, Tsai, W, Bauza, D, Ghibaudo, G; (2009) 'Analysis of Electron Mobility In Hfo2/Tin Gate Metal-Oxide-Semiconductor Field Effect Transistors: The Influence of Hfo2 Thickness, Temperature, and Oxide Charge'. Journal of Applied Physics, 105 (2) [DOI] [Details]
(2009)'Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures'
Monaghan, S,Hurley, PK,Cherkaoui, K,Negara, MA,Schenk, A (2009) 'Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures'. Solid-State Electronics, 53 :438-444 [DOI] [Details]
(2009)'Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures'
Monaghan, S, Hurley, PK, Cherkaoui, K, Negara, MA, Schenk, A; (2009) 'Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures'. Solid-State Electronics, 53 (4):438-444 [DOI] [Details]
(2008)'Electrical, Structural, and Chemical Properties of Hfo2 Films Formed By Electron Beam Evaporation'
Cherkaoui, K, Monaghan, S, Negara, MA, Modreanu, M, Hurley, PK, O'Connell, D, McDonnell, S, Hughes, G, Wright, S, Barklie, RC, Bailey, P, Noakes, TCQ; (2008) 'Electrical, Structural, and Chemical Properties of Hfo2 Films Formed By Electron Beam Evaporation'. Journal of Applied Physics, 104 (6) [DOI] [Details]
(2008)'High-K-Oxide/Silicon Interfaces Characterized By Capacitance Frequency Spectroscopy'
Raeissi, B, Piscator, J, Engstrom, O, Hall, S, Buiu, O, Lemme, MC, Gottlob, HDB, Hurley, PK, Cherkaoui, K, Osten, HJ; (2008) 'High-K-Oxide/Silicon Interfaces Characterized By Capacitance Frequency Spectroscopy'. Solid-State Electronics, 52 (9):1274-1279 [DOI] [Details]
(2008)'Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films'
Farrell RA, Petkov N, Cherkaoui K, Amenitsch H, Holmes JD, Hurley PK, Morris MA; (2008) 'Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films'. Chemphyschem, 9 (11):1524-1527 [DOI] [Details]
(2007)'Characterisation and passivation of interface defects in (100)-Si/SiO2/HfO2/TiN gate stacks'
Hurley, PK,Cherkaoui, K,McDonnell, S,Hughes, G,Groenland, AW; (2007) 'Characterisation and passivation of interface defects in (100)-Si/SiO2/HfO2/TiN gate stacks'. Microelectronics Reliability, 47 :1195-1201 [DOI] [Details]
(2005)'Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies'
Dubourdieu, C,Roussel, H,Jimenez, C,Audier, M,Senateur, JP,Lhostis, S,Auvray, L,Ducroquet, F,O'Sullivan, BJ,Hurley, PK,Rushworth, S,Hubert-Pfalzgraf, L (2005) 'Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies'. Materials Science and Engineering B-Solid State Materials For Advanced Technology, 118 :105-111 [DOI] [Details]
(2004)'Electrical evaluation of defects at the Si(100)/HfO2 interface'
O'Sullivan, BJ,Hurley, PK,O'Connor, E,Modreanu, M,Roussel, H,Jimenez, C,Dubourdieu, C,Audier, M,Senateur, JP (2004) 'Electrical evaluation of defects at the Si(100)/HfO2 interface'. Journal of the Electrochemical Society, 151 :493-496 [DOI] [Details]
(2002)'Examination of the Si(111)-SiO2, Si(110)-SiO2, and Si(100)-SiO2 interfacial properties following rapid thermal annealing'
Hurley, PK,O'Sullivan, BJ,Cubaynes, FN,Stolk, PA,Widdershoven, FP,Das, JH; (2002) 'Examination of the Si(111)-SiO2, Si(110)-SiO2, and Si(100)-SiO2 interfacial properties following rapid thermal annealing'. Journal of the Electrochemical Society, 149 :194-197 [DOI] [Details]
(2001)'Si(100)-SiO2 interface properties following rapid thermal processing'
O'Sullivan, BJ,Hurley, PK,Leveugle, C,Das, JH (2001) 'Si(100)-SiO2 interface properties following rapid thermal processing'. Journal of Applied Physics, 89 :3811-3820 [Details]
(2001)'Effects of active surface nitridation on the properties of high permittivity films deposited by UV-assisted CVD'
O'Sullivan, BJ,O'Connor, E,Howley, R,Hurley, PK,Zhang, JY,Kaliwoh, N,Fang, Q,Boyd, IW,Dubourdieu, C,Audier, MA,Senateur, JP,Davies, HO,Leedham, TJ,Jones, AC,Semmache, B (2001) 'Effects of active surface nitridation on the properties of high permittivity films deposited by UV-assisted CVD'. Journal De Physique Iv, 11 :261-265 [Details]
(1999)'Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source'
Mooney, MB,Hurley, PK,O'Sullivan, BJ,Beechinor, JT,Zhang, JY,Boyd, IW,Kelly, PV,Senateur, JP,Crean, GM,Jimenez, C,Paillous, M (1999) 'Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source'. Microelectronic Engineering, 48 :283-286 [Details]
(1995)'CAPACITANCE-VOLTAGE CHARACTERISTICS OF HEAVILY-DOPED SILICON INSULATOR SILICON CAPACITORS'
HURLEY, PK,WALL, L,MORAN, S,MATHEWSON, A; (1995) 'CAPACITANCE-VOLTAGE CHARACTERISTICS OF HEAVILY-DOPED SILICON INSULATOR SILICON CAPACITORS'. Semiconductor Science and Technology, 10 :190-196 [Details]
(2009)'Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2'
Afanas'ev, VV,Stesmans, A,Brammertz, G,Delabie, A,Sionke, S,O'Mahony, A,Povey, IM,Pemble, ME,O'Connor, E,Hurley, PK,Newcomb, SB; (2009) 'Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2'. Applied Physics Letters, 94 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Band Offsets At Interfaces of (100)Inxga1-Xas (0 ≪= X ≪= 0.53) With Al2o3 and Hfo2'
Afanas'ev, VV, Stesmans, A, Brammertz, G, Delabie, A, Sionke, S, O'Mahony, A, Povey, IM, Pemble, ME, O'Connor, E, Hurley, PK, Newcomb, SB; (2009) 'Band Offsets At Interfaces of (100)Inxga1-Xas (0 ≪= X ≪= 0.53) With Al2o3 and Hfo2'. Microelectronic Engineering, 86 (7-9):1550-1553 [DOI] [Details]
(2008)'Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon'
Hurley, PK,Cherkaoui, K,O'Connor, E,Lemme, MC,Gottlob, HDB,Schmidt, M,Hall, S,Lu, Y,Buiu, O,Raeissi, B,Piscator, J,Engstrom, O,Newcomb, SB; (2008) 'Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon'. Journal of the Electrochemical Society, 155 :13-20 [DOI] [Details]
(2003)'Analysis of P-b centers at the Si(111)/SiO2 interface following rapid thermal annealing'
Hurley, PK,Stesmans, A,Afanas'ev, VV,O'Sullivan, BJ,O'Callaghan, E (2003) 'Analysis of P-b centers at the Si(111)/SiO2 interface following rapid thermal annealing'. Journal of Applied Physics, 93 :3971-3973 [DOI] [Details]
(2010)'Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates'
Shin, B,Weber, JR,Long, RD,Hurley, PK,Van de Walle, CG,McIntyre, PC; (2010) 'Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates'. Applied Physics Letters, 96 [DOI] [Details]
(2009)'Degradation Dynamics and Breakdown of MgO Gate Oxides'
Miranda, E, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK; (2009) 'Degradation Dynamics and Breakdown of MgO Gate Oxides'. Microelectronic Engineering, 86 (7-9):1715-1717 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Leakage Current Effects On C-V Plots of High-K Metal-Oxide-Semiconductor Capacitors'
Lu, Y, Hall, S, Tan, LZ, Mitrovic, IZ, Davey, WM, Raeissi, B, Engstrom, O, Cherkaoui, K, Monaghan, S, Hurley, PK, Gottlob, HDB, Lemme, MC; (2009) 'Leakage Current Effects On C-V Plots of High-K Metal-Oxide-Semiconductor Capacitors'. Journal of Vacuum Science & Technology B, 27 (1):352-355 [DOI] [Details]
(2009)'Unpinned Interface Between Al2o3 Gate Dielectric Layer Grown By Atomic Layer Deposition and Chemically Treated N-In0.53ga0.47as(001)'
Shin, B, Cagnon, J, Long, RD, Hurley, PK, Stemmer, S, McIntyre, PC; (2009) 'Unpinned Interface Between Al2o3 Gate Dielectric Layer Grown By Atomic Layer Deposition and Chemically Treated N-In0.53ga0.47as(001)'. Electrochemical and Solid State Letters, 12 (8):40-43 [DOI] [Details]
(2008)'Energy state distributions of the P-b centers at the (100), (110), and (111) Si/SiO2 interfaces investigated by Laplace deep level transient spectroscopy'
Dobaczewski, L,Bernardini, S,Kruszewski, P,Hurley, PK,Markevich, VP,Hawkins, ID,Peaker, AR; (2008) 'Energy state distributions of the P-b centers at the (100), (110), and (111) Si/SiO2 interfaces investigated by Laplace deep level transient spectroscopy'. Applied Physics Letters, 92 [DOI] [Details]
(2008)'Interface Defects In Hfo2, Lasiox, and Gd2o3 High-K/Metal-Gate Structures On Silicon'
Hurley, PK, Cherkaoui, K, O'Connor, E, Lemme, MC, Gottlob, HDB, Schmidt, M, Hall, S, Lu, Y, Buiu, O, Raeissi, B, Piscator, J, Engstrom, O, Newcomb, SB; (2008) 'Interface Defects In Hfo2, Lasiox, and Gd2o3 High-K/Metal-Gate Structures On Silicon'. Journal of the Electrochemical Society, 155 (2):13-20 [DOI] [Details]
(2008)'Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films'
Farrell, RA,Petkov, N,Cherkaoui, K,Amenitsch, H,Holmes, JD,Hurley, PK,Morris, MA; (2008) 'Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films'. Chemphyschem, 9 :1524-1527 [DOI] [Details]
(2008)'In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric'
O'Connor, E,Long, RD,Cherkaoui, K,Thomas, KK,Chalvet, F,Povey, IM,Pemble, ME,Hurley, PK,Brennan, B,Hughes, G,Newcomb, SB; (2008) 'In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric'. Applied Physics Letters, 92 [DOI] [Details]
(2008)'Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2'
Afanas'ev, VV,Badylevich, M,Stesmans, A,Brammertz, G,Delabie, A,Sionke, S,O'Mahony, A,Povey, IM,Pemble, ME,O'Connor, E,Hurley, PK,Newcomb, SB; (2008) 'Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2'. Applied Physics Letters, 93 [DOI] [Details]
(2007)'Characterisation and Passivation of Interface Defects In (100)-Si/Sio2/Hfo2/Tin Gate Stacks'
Hurley, PK, Cherkaoui, K, McDonnell, S, Hughes, G, Groenland, AW; (2007) 'Characterisation and Passivation of Interface Defects In (100)-Si/Sio2/Hfo2/Tin Gate Stacks'. Microelectronics Reliability, 47 (8):1195-1201 [DOI] [Details]
(2005)'Interface states and Pb defects at the Si(100)/HfO2 interface'
Hurley, PK,O'Sullivan, BJ,Afanas'ev, VV,Stesmans, A; (2005) 'Interface states and Pb defects at the Si(100)/HfO2 interface'. Electrochemical and Solid State Letters, 8 :44-46 [DOI] [Details]
(2004)'Avalanche photodiode-based active pixel imager'
Marshall, GF,Jackson, JC,Denton, J,Hurley, PK,Braddell, O,Mathewson, A (2004) 'Avalanche photodiode-based active pixel imager'. IEEE Transactions On Electron Devices, 51 :509-511 [DOI] [Details]
(2004)'Interface of ultrathin HfO2 films deposited by UV-photo-CVD'
Fang, Q,Zhang, JY,Wang, Z,Modreanu, M,O'Sullivan, BJ,Hurley, PK,Leedham, TL,Hywel, D,Audier, MA,Jimenez, C,Senateur, JP,Boyd, IW (2004) 'Interface of ultrathin HfO2 films deposited by UV-photo-CVD'. Thin Solid Films, 453 :203-207 [DOI] [Details]
(2003)'Interface of tantalum oxide films on silicon by UV annealing at low temperature'
Fang, Q,Zhang, JY,Wang, ZM,Wu, JX,O'Sullivan, BJ,Hurley, PK,Leedham, TL,Davies, H,Audier, MA,Jimenez, C,Senateur, JP,Boyd, IW (2003) 'Interface of tantalum oxide films on silicon by UV annealing at low temperature'. Thin Solid Films, 428 :248-252 [Details]
(2002)'Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes'
Jackson, JC,Hurley, PK,Lane, B,Mathewson, A,Morrison, AP; (2002) 'Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes'. Applied Physics Letters, 80 :4100-4102 [DOI] [Details]
(1997)'Dopants (P, As, and B) in the polycrystalline silicon/titanium silicide system: Redistribution and activation'
Kalnitsky, A,Hurley, PK,Lepert, A; (1997) 'Dopants (P, As, and B) in the polycrystalline silicon/titanium silicide system: Redistribution and activation'. Journal of the Electrochemical Society, 144 :1090-1095 [Details]

Other Journals

YearPublication
(2004)'Interface of ultrathin HfO2 films deposited by UV-photo-CVD'
Fang, Q. and Zhang, J.-Y. and Wang, Z. and Modreanu, M. and O'Sullivan, B.J. and Hurley, P.K. and Leedham, T.L. and Hywel, D. and Audier, M.A. and Jimenez, C. and Senateur, J.-P. and Boyd, I.W. (2004) 'Interface of ultrathin HfO2 films deposited by UV-photo-CVD' Thin Solid Films, 453-454 :203-207. Globe icon [Details]
(1996)'Investigation of trapped charge in oxides under Fowler-Nordheim stress using low bias conditions'
Duane, R and Martin, A and O'Donovan, P and Hurley, P and O'Sullivan, P and Mathewson, A (1996) 'Investigation of trapped charge in oxides under Fowler-Nordheim stress using low bias conditions' Microelectronics Reliability, 36 (11) :1623-1626. [Details]
(1998)'Hot carrier degradation mechanisms in sub-micron< i> p channel MOSFETs: Impact on low frequency (1/f) noise behaviour'
Sheehan, E and Hurley, PK and Mathewson, A (1998) 'Hot carrier degradation mechanisms in sub-micron< i> p channel MOSFETs: Impact on low frequency (1/f) noise behaviour' Microelectronics Reliability, 38 (6) :931-936. [Details]
(1998)'Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures'
Leveugle, C and Hurley, PK and Mathewson, A and Moran, S and Sheehan, E and Kalnitsky, A (1998) 'Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures' Microelectronics Reliability, 38 (2) :233-237. [Details]
(2000)'Interface properties of the Si (100)--SiO< sub> 2 system formed by rapid thermal oxidation'
O’Sullivan, BJ and Hurley, PK and Mathewson, A and Das, JH and Daniel, AD (2000) 'Interface properties of the Si (100)--SiO< sub> 2 system formed by rapid thermal oxidation' Microelectronics Reliability, 40 (4) :645-648. [Details]
(2003)'Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices'
Modreanu, M. and Gartner, M. and Aperathitis, E. and Tomozeiu, N. and Androulidaki, M. and Cristea, D. and Hurley, P. (2003) 'Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices' Physica E: Low-Dimensional Systems and Nanostructures, 16 (3-4) :461-466. Globe icon [Details]
(2002)'Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes'
Jackson, JC and Hurley, PK and Lane, B and Mathewson, A and Morrison, AP (2002) 'Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes' Applied physics letters, 80 (22) :4100-4102. [Details]
(2004)'Avalanche photodiode-based active pixel imager'
Marshall, GF and Jackson, JC and Denton, J and Hurley, PK and Braddell, O and Mathewson, A (2004) 'Avalanche photodiode-based active pixel imager' Electron Devices, IEEE Transactions on, 51 (3) :509-511. [Details]
(2005)'Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD'
Decams, J.M. and Guillon, H. and Jiménez, C. and Audier, M. and Sénateur, J.P. and Dubourdieu, C. and Cadix, O. and O'Sullivan, B.J. and Modreanu, M. and Hurley, P.K. and Rusworth, S. and Leedham, T.J. and Davies, H. and Fang, Q. and Boyd, I. (2005) 'Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD' Microelectronics Reliability, 45 (5-6) :929-932. Globe icon [Details]
(2002)'Nanocrystalline TiO< sub> 2 films studied by optical, XRD and FTIR spectroscopy'
Zhang, Jun-Ying and Boyd, Ian W and O'Sullivan, BJ and Hurley, PK and Kelly, PV and Senateur, J-P (2002) 'Nanocrystalline TiO< sub> 2 films studied by optical, XRD and FTIR spectroscopy' Journal of non-crystalline solids, 303 (1) :134-138. [Details]
(2007)'Navigation aids in the search for future high-< i> k dielectrics: Physical and electrical trends'
Engstr\"om, Olof and Raeissi, Bahman and Hall, Steve and Buiu, Octavian and Lemme, Max C and Gottlob, HDB and Hurley, PK and Cherkaoui, Karim (2007) 'Navigation aids in the search for future high-< i> k dielectrics: Physical and electrical trends' Solid-State Electronics, 51 (4) :622-626. [Details]
(2001)'Si (100)--SiO 2 interface properties following rapid thermal processing'
OSullivan, BJ and Hurley, PK and Leveugle, C and Das, JH (2001) 'Si (100)--SiO 2 interface properties following rapid thermal processing' Journal of Applied Physics, 89 (7) :3811-3820. [Details]
(2003)'Investigation of TiO< sub> 2-doped HfO< sub> 2 thin films deposited by photo-CVD'
Fang, Q and Zhang, J-Y and Wang, ZM and Wu, JX and O'Sullivan, BJ and Hurley, PK and Leedham, TL and Davies, H and Audier, MA and Jimenez, C and others (2003) 'Investigation of TiO< sub> 2-doped HfO< sub> 2 thin films deposited by photo-CVD' Thin Solid Films, 428 (1) :263-268. [Details]
(2004)'Interface of ultrathin HfO< sub> 2 films deposited by UV-photo-CVD'
Fang, Q and Zhang, J-Y and Wang, Z and Modreanu, M and O'Sullivan, BJ and Hurley, PK and Leedham, TL and Hywel, D and Audier, MA and Jimenez, C and others (2004) 'Interface of ultrathin HfO< sub> 2 films deposited by UV-photo-CVD' Thin Solid Films, 453 :203-207. [Details]
(2003)'Characterisation of HfO< sub> 2 deposited by photo-induced chemical vapour deposition'
Fang, Q and Zhang, J-Y and Wang, ZM and Wu, JX and O'Sullivan, BJ and Hurley, PK and Leedham, TL and Davies, H and Audier, MA and Jimenez, C and others (2003) 'Characterisation of HfO< sub> 2 deposited by photo-induced chemical vapour deposition' Thin Solid Films, 427 (1) :391-396. [Details]
(2003)'Investigation on preparation and physical properties of nanocrystalline Si/SiO< sub> 2 superlattices for Si-based light-emitting devices'
Modreanu, M and Gartner, M and Aperathitis, E and Tomozeiu, N and Androulidaki, M and Cristea, D and Hurley, Paul (2003) 'Investigation on preparation and physical properties of nanocrystalline Si/SiO< sub> 2 superlattices for Si-based light-emitting devices' Physica E: Low-dimensional Systems and Nanostructures, 16 (3) :461-466. [Details]
(2005)'Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies'
Dubourdieu, C and Roussel, H and Jimenez, C and Audier, M and S\'enateur, JP and Lhostis, S and Auvray, L and Ducroquet, F and O'sullivan, BJ and Hurley, PK and others (2005) 'Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies' Materials Science and Engineering: B, 118 (1) :105-111. [Details]
(1998)'The Impact of Rapid Thermal Annealing on the Properties of the Si (100)-SiO2 Interface'
Hurley, PK and Leveugle, C and Mathewson, A and Doyle, D and Whiston, S and Prendergast, J and Lundgren, P (1998) 'The Impact of Rapid Thermal Annealing on the Properties of the Si (100)-SiO2 Interface' MRS Proceedings, 510 . [Details]
(1997)'Impact of the polysilicon doping level on the properties of the< i> silicon/oxide interface in polysilicon/oxide/silicon capacitor structures'
Leveugle, C and Hurley, PK and Mathewson, A and Moran, S and Sheehan, E and Kalnitsky, A and Lepert, A and Beinglass, I and Venkatesan, M (1997) 'Impact of the polysilicon doping level on the properties of the< i> silicon/oxide interface in polysilicon/oxide/silicon capacitor structures' Microelectronic engineering, 36 (1) :215-218. [Details]
(2005)'Post deposition UV-induced O2 annealing of HfO2 thin films'
Fang, Q. and Liaw, I. and Modreanu, M. and Hurley, P.K. and Boyd, I.W. (2005) 'Post deposition UV-induced O2 annealing of HfO2 thin films' Microelectronics Reliability, 45 (5-6) :957-960. Globe icon [Details]

Conference Publications

YearPublication
(2003)International Reliability Physics Symposium (IRPS03)
J. C. Jackson, G. Healy, A-M. Kelleher, J. Alderman, J. Donnelly, P. K. Hurley, A. P. Morrison, and A. Mathewson.; (2003) Defect passivation and dark count in Geiger-mode avalanche photodiodes . In: * eds. International Reliability Physics Symposium (IRPS03) Dallas, Texas, USA, , 30-MAR-03 - 03-APR-03 , pp.*-* [Details]
(2012)Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Djara, V and Cherkaoui, K and Schmidt, M and Gomeniuk, YY and O'Connor, E and Povey, IM and O'Connell, D and Monaghan, S and Pemble, ME and Hurley, PK (2012) Study of interface and oxide defects in high-k/In 0.53 Ga 0.47 As n-MOSFETs Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on , pp.29-32 [Details]
(2012)13th International Conference on Ultimate Integration on Silicon (ULIS) 2012, art. no. 6193349
Djara, V. , Cherkaoui, K. , Schmidt, M. , Gomeniuk, Y.Y. , O'Connor, É. , Povey, I.M. , O'Connell, D. , Monaghan, S. , Pemble, M.E. , Hurley, P.K. (2012) Study of interface and oxide defects in high-k/In0.53Ga0.47As n-MOSFETs 13th International Conference on Ultimate Integration on Silicon (ULIS) 2012, art. no. 6193349 , pp.29-32 [DOI] [Details]
(2002)International Conference on Microelectronic Test Structures (ICMTS 2002)
MacSweeney,D.; McCarthy,K.G.; Floyd,L.; Mathewson,A.; Hurley,P.; Power,S.; Kelly,S.; (2002) Influence of Probing Configuration and Data Set Size for Bipolar Capacitance Determination . In: Walton,A.J.; Mathewson,A eds. International Conference on Microelectronic Test Structures (ICMTS 2002) Cork, Ireland, , 08-APR-02 - 11-APR-02 , pp.127-132 [Details]
(2013)Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Cabrera, W., Dong, H., Brennan, B., O'Connor, E., Carolan, P., Galatage, R., Monaghan, S., Povey, I., Hurley, P.K., Hinkle, C.L., Chabal, Y., Wallace, R.M. (2013) Atomic layer deposition of HfO2 on III-V semiconductors - An interfacial chemistry perspective Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 Washington, DC; United States, , 12-MAY-13 - 16-MAY-13 , pp.Volume 2, page 1-Volume 2, page 4 [DOI] [Details]
(2012)5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting; Code93682
Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K. (2012) Can metal/Al 2O 3/In 0.53Ga 0.47As/InP MOSCAP properties translate to metal/Al 2O 3/In 0.53Ga 0.47As/InP MOSFET characteristics? . In: Dielectric Science and Technology Division of ECS,Electronics and Photonics,Sensor,New Technology Subcommittee,IEEE Electron Device Society (EDS) eds. 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting; Code93682 Seattle, WA, USA, , 06-MAY-12 - 10-MAY-12 , pp.79-88 Globe icon [DOI] [Details]
(2008)9th International Conference on ULtimate Integration of Silicon (ULIS) 2008, art. no. 4527151
Monaghan, S. , Hurley, P.K. , Cherkaoui, K. , Negara, M.A. , Schenk, A. (2008) Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling 9th International Conference on ULtimate Integration of Silicon (ULIS) 2008, art. no. 4527151 , pp.107-110 [DOI] [Details]
(2009)IEEE International Reliability Physics Symposium Proceedings 2009, art. no. 5173330
Miranda, E. , O'Connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O'Connell, D. , Hurley, P.K. (2009) Soft breakdown in MgO dielectric layers IEEE International Reliability Physics Symposium Proceedings 2009, art. no. 5173330 , pp.688-691 [DOI] [Details]
(2012)28th International Conference on Microelectronics - Proceedings (MIEL) 2012, art. no. 6222790
Miranda, E. , Jiménez, D. , Suñé, J. , O'Connor, E. , Monaghan, S. , Cherkaoui, K. , Hurley, P.K. (2012) Spatial statistics for micro/nanoelectronics and materials science 28th International Conference on Microelectronics - Proceedings (MIEL) 2012, art. no. 6222790 , pp.23-30 [DOI] [Details]
(2002)Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on
MacSweeney, D and McCarthy, KG and Floyd, L and Mathewson, A and Hurley, P and Power, JA and Kelly, SC (2002) Influence of probing configuration and data set size for bipolar junction capacitance determination Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on , pp.127-132 [Details]
(1996)Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Moran, S and Hurley, PK and Mathewson, A (1996) Test structure for investigating activated doping concentrations in polycrystalline silicon Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on , pp.217-220 [Details]
(2001)Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on
Jackson, JC and Morrison, AP and Hurley, P and Harrell, WR and Damjanovic, D and Lane, B and Mathewson, A (2001) Process monitoring and defect characterization of single photon avalanche diodes Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on , pp.165-170 [Details]
(1995)Solid State Device Research Conference, 1995. ESSDERC'95. Proceedings of the 25th European
Kalnitsky, Alex and Hurley, P and Lepert, Arnaud and Mallardeau, C and Sheehan, Eoin and Mathewson, A (1995) Phosphorus in the Polysilicon TiSi 2 System: Dopant Redistribution Solid State Device Research Conference, 1995. ESSDERC'95. Proceedings of the 25th European , pp.371-374 [Details]
(1994)Solid State Device Research Conference, 1994. ESSDERC'94. 24th European
Hurley, PK and Moran, S and Wall, L and Mathewson, A and Mason, B (1994) Mechanisms of Low Frequency Noise in P Channel MOSFETs Solid State Device Research Conference, 1994. ESSDERC'94. 24th European , pp.147-150 [Details]
(2006)25th International Conference on Microelectronics
Cherkaoui, K.,Negara, A.,McDonnell, S.,Hughes, G.,Modreanu, M.,Hurley, P. K.,Ieee, (2006) Electrical properties of HfO(2) films formed by ion assisted deposition. 2006 25th International Conference on Microelectronics , pp.379-382 Globe icon [Details]
(1993)Solid State Device Research Conference, 1993. ESSDERC'93. 23rd European
Hurley, PK and Wall, L and Mathewson, A (1993) Double Polysilicon Capacitors in 1 $\mu$m Analogue CMOS Technology Solid State Device Research Conference, 1993. ESSDERC'93. 23rd European , pp.569-572 [Details]
(1999)Solid-State Device Research Conference, 1999. Proceeding of the 29th European
OSullivan, BJ and Hurley, PK and Mathewson, A and Beanland, R and Rodrigues, R and Kay, P (1999) The Effect of Oxide Patterned Layers on the Rapid Thermal Oxidation of Polycrystalline Silicon Solid-State Device Research Conference, 1999. Proceeding of the 29th European , pp.424-427 [Details]
(2013)Device Research Conference (DRC), 2013 71st Annual
Djara, V and Cherkaoui, K and Lopez, T and O'Connor, E and Povey, IM and Thomas, KK and Hurley, PK (2013) Junctionless InGaAs MOSFETs with InAlAs barrier isolation and channel thinning by digital wet etching Device Research Conference (DRC), 2013 71st Annual , pp.131-132 [Details]
(2003)Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Jackson, JC and Healy, G and Kelleher, AM and Alderman, J and Donnelly, J and Hurley, PK and Morrison, AP and Mathewson, A (2003) Defect passivation and dark count in Geiger-mode avalanche photodiodes Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International , pp.586-587 [Details]
(1999)Plasma Process-Induced Damage, 1999 4th International Symposium on
Hurley, PK and Rodrigues, R and Kay, P and Thakur, RPS and Clarke, D and Sheehan, E and Mathewson, A (1999) Plasma process induced degradation of thin inter-polysilicon dielectric layers Plasma Process-Induced Damage, 1999 4th International Symposium on , pp.45-48 [Details]
(2009)Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2009, art. no. 5232695
Miranda, E. , O'connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O'Connell, D. , Hurley, P.K. (2009) Post-breakdown conduction in metal gate/MgO/InP structures Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2009, art. no. 5232695 , pp.71-74 [DOI] [Details]

Other

YearPublication
(1998)Strategies for MilliRad sensitivity in PMOS dosimeters.
Conneely, C,O'Connell, B,Hurley, P,Lane, W,Adams, L (1998) Strategies for MilliRad sensitivity in PMOS dosimeters. Other [Details]
(1996)The impact of oxide degradation on the low frequency (1/F) noise behaviour of P channel MOSFETs.
Hurley, PK,Sheehan, E,Moran, S,Mathewson, A (1996) The impact of oxide degradation on the low frequency (1/F) noise behaviour of P channel MOSFETs. Other [Details]
(2007)The Influence of Hfo2 Film Thickness On The Interface State Density and Low Field Mobility of N Channel Hfo2/Tin Gate Mosfets.
Negara, AA, Cherkaoui, K, Majhi, P, Young, CD, Tsai, W, Bauza, D, Ghibaudo, G, Hurley, PK; (2007) The Influence of Hfo2 Film Thickness On The Interface State Density and Low Field Mobility of N Channel Hfo2/Tin Gate Mosfets. Other [DOI] [Details]
(2010)Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III-V stacks using functional summary statistics.
Miranda, E,O'Connor, E,Hurley, PK (2010) Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III-V stacks using functional summary statistics. Other [DOI] [Details]
(2009)Growth, Ambient Stability and Electrical Characterisation of Mgo Thin Films On Silicon Surfaces.
Casey, P, O'Connor, E, Long, R, Brennan, B, Krasnikov, SA, O'Connell, D, Hurley, PK, Hughes, G; (2009) Growth, Ambient Stability and Electrical Characterisation of Mgo Thin Films On Silicon Surfaces. Other [DOI] [Details]
(2009)Scaling Potential and Mosfet Integration of Thermally Stable Gd Silicate Dielectrics.
Gottlob, HDB, Schmidt, M, Stefani, A, Lemme, MC, Kurz, H, Mitrovic, IZ, Davey, WM, Hall, S, Werner, M, Chalker, PR, Cherkaoui, K, Hurley, PK, Piscator, J, Engstrom, O, Newcomb, SB; (2009) Scaling Potential and Mosfet Integration of Thermally Stable Gd Silicate Dielectrics. Other [DOI] [Details]
(2009)Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces.
Casey, P,O'Connor, E,Long, R,Brennan, B,Krasnikov, SA,O'Connell, D,Hurley, PK,Hughes, G (2009) Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces. Other [DOI] [Details]
(2009)Gd silicate: A high-k dielectric compatible with high temperature annealing.
Gottlob, HDB,Stefani, A,Schmidt, M,Lemme, MC,Kurz, H,Mitrovic, IZ,Werner, M,Davey, WM,Hall, S,Chalker, PR,Cherkaoui, K,Hurley, PK,Piscator, J,Engstrom, O,Newcomb, SB (2009) Gd silicate: A high-k dielectric compatible with high temperature annealing. Other [DOI] [Details]
(2009)Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics.
Gottlob, HDB,Schmidt, M,Stefani, A,Lemme, MC,Kurz, H,Mitrovic, IZ,Davey, WM,Hall, S,Werner, M,Chalker, PR,Cherkaoui, K,Hurley, PK,Piscator, J,Engstrom, O,Newcomb, SB (2009) Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics. Other [DOI] [Details]
(2008)Gentle FUSI NiSi metal gate process for high-k dielectric screening.
Gottlob, HDB,Lemme, MC,Schmidt, M,Echtermeyer, TJ,Mollenhauer, T,Kurz, H,Cherkaoui, K,Hurley, PK,Newcomb, SB (2008) Gentle FUSI NiSi metal gate process for high-k dielectric screening. Other [DOI] [Details]
(2007)Navigation aids in the search for future high-k dielectrics: Physical and electrical trends.
Engstrom, O,Raeissi, B,Hall, S,Buiu, O,Lemme, MC,Gottlob, HDB,Hurley, PK,Cherkaoui, K (2007) Navigation aids in the search for future high-k dielectrics: Physical and electrical trends. Other [DOI] [Details]
(2007)Extrinsic Stacking Fault Generation Related to High-K Dielectric Growth On A Si Substrate.
Volkos, SN, Bernardinia, S, Rigopoulos, N, Efthymiou, ES, Hawkins, ID, Hamilton, B, Dobaczewski, L, Hall, S, Hurley, PK, Delabie, A, Peaker, AR; (2007) Extrinsic Stacking Fault Generation Related to High-K Dielectric Growth On A Si Substrate. Other [DOI] [Details]
(2007)Physical and Electrical Properties of Low Dielectric Constant Self-Assembled Mesoporous Silica Thin Films.
Farrell, RA, Cherkaoui, K, Petkov, N, Amenitsch, H, Holmes, JD, Hurley, PK, Morris, MA; (2007) Physical and Electrical Properties of Low Dielectric Constant Self-Assembled Mesoporous Silica Thin Films. Other [DOI] [Details]
(2006)Electrically Active Defects At The Interface Between (100)Si and Hafnium Dioxide Thin Films.
Hurley, PK, Cherkaoui, K; (2006) Electrically Active Defects At The Interface Between (100)Si and Hafnium Dioxide Thin Films. Other [Details]
(2005)Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD.
Decams, JM,Guillon, H,Jimenez, C,Audier, M,Senateur, JP,Dubourdieu, C,Cadix, O,O'Sullivan, BJ,Modreanu, M,Hurley, PK,Rusworth, S,Leedham, TJ,Davies, H,Fang, Q,Boyd, I (2005) Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD. Other [DOI] [Details]
(2003)Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD.
Fang, Q,Zhang, JY,Wang, ZM,Wu, JX,O'Sullivan, BJ,Hurley, PK,Leedham, TL,Davies, H,Audier, MA,Jimenez, C,Senateur, JP,Boyd, IW (2003) Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD. Other [DOI] [Details]
(2009)Degradation dynamics and breakdown of MgO gate oxides.
Miranda, E,O'Connor, E,Hughes, G,Casey, P,Cherkaoui, K,Monaghan, S,Long, R,O'Connell, D,Hurley, PK (2009) Degradation dynamics and breakdown of MgO gate oxides. Other [DOI] [Details]
(2009)Gd Silicate: A High-K Dielectric Compatible With High Temperature Annealing.
Gottlob, HDB, Stefani, A, Schmidt, M, Lemme, MC, Kurz, H, Mitrovic, IZ, Werner, M, Davey, WM, Hall, S, Chalker, PR, Cherkaoui, K, Hurley, PK, Piscator, J, Engstrom, O, Newcomb, SB; (2009) Gd Silicate: A High-K Dielectric Compatible With High Temperature Annealing. Other [DOI] [Details]
(2009)Band offsets at interfaces of (100)InxGa1-xAs (0 <= x <= 0.53) with Al2O3 and HfO2.
Afanas'ev, VV,Stesmans, A,Brammertz, G,Delabie, A,Sionke, S,O'Mahony, A,Povey, IM,Pemble, ME,O'Connor, E,Hurley, PK,Newcomb, SB (2009) Band offsets at interfaces of (100)InxGa1-xAs (0 <= x <= 0.53) with Al2O3 and HfO2. Other [DOI] [Details]
(2008)Gentle Fusi Nisi Metal Gate Process For High-K Dielectric Screening.
Gottlob, HDB, Lemme, MC, Schmidt, M, Echtermeyer, TJ, Mollenhauer, T, Kurz, H, Cherkaoui, K, Hurley, PK, Newcomb, SB; (2008) Gentle Fusi Nisi Metal Gate Process For High-K Dielectric Screening. Other [DOI] [Details]
(2005)Impact of H-2/N-2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks.
Schmidt, M,Lemme, MC,Kurz, H,Witters, T,Schram, T,Cherkaoui, K,Negara, A,Hurley, PK (2005) Impact of H-2/N-2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks. Other [DOI] [Details]
(2002)Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy.
Zhang, JY,Boyd, IW,O'Sullivan, BJ,Hurley, PK,Kelly, PV,Senateur, JP (2002) Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy. Other [DOI] [Details]
(2011)Interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric.
Negara, MA,Goel, N,Bauza, D,Ghibaudo, G,Hurley, PK (2011) Interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric. Other [DOI] [Details]
(2011)Application of the quadrat counts method to the analysis of the spatial breakdown spots pattern in metal gate/MgO/InP structures.
Miranda, E,O'Connor, E,Hurley, PK (2011) Application of the quadrat counts method to the analysis of the spatial breakdown spots pattern in metal gate/MgO/InP structures. Other [DOI] [Details]
(2011)The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system.
Zhang, PF,Nagle, RE,Deepak, N,Povey, IM,Gomeniuk, YY,O'Connor, E,Petkov, N,Schmidt, M,O'Regan, TP,Cherkaoui, K,Pemble, ME,Hurley, PK,Whatmore, RW (2011) The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system. Other [DOI] [Details]
(2009)Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors.
Lu, Y,Hall, S,Tan, LZ,Mitrovic, IZ,Davey, WM,Raeissi, B,Engstrom, O,Cherkaoui, K,Monaghan, S,Hurley, PK,Gottlob, HDB,Lemme, MC (2009) Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors. Other [DOI] [Details]
(2007)Extracting the relative dielectric constant for high-k layers from CV measurements - Errors and error propagation.
Buiu, O,Hall, S,Engstrom, O,Raeissi, B,Lemme, M,Hurley, PK,Cherkaoui, K (2007) Extracting the relative dielectric constant for high-k layers from CV measurements - Errors and error propagation. Other [DOI] [Details]
(2007)Extrinsic stacking fault generation related to high-k dielectric growth on a Si substrate.
Volkos, SN,Bernardinia, S,Rigopoulos, N,Efthymiou, ES,Hawkins, ID,Hamilton, B,Dobaczewski, L,Hall, S,Hurley, PK,Delabie, A,Peaker, AR (2007) Extrinsic stacking fault generation related to high-k dielectric growth on a Si substrate. Other [DOI] [Details]
(2007)Extracting The Relative Dielectric Constant For High-K Layers From Cv Measurements - Errors and Error Propagation.
Buiu, O, Hall, S, Engstrom, O, Raeissi, B, Lemme, M, Hurley, PK, Cherkaoui, K; (2007) Extracting The Relative Dielectric Constant For High-K Layers From Cv Measurements - Errors and Error Propagation. Other [DOI] [Details]
(2007)Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films.
Farrell, RA,Cherkaoui, K,Petkov, N,Amenitsch, H,Holmes, JD,Hurley, PK,Morris, MA (2007) Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films. Other [DOI] [Details]
(2007)The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETs.
Negara, AA,Cherkaoui, K,Majhi, P,Young, CD,Tsai, W,Bauza, D,Ghibaudo, G,Hurley, PK (2007) The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETs. Other [DOI] [Details]
(2006)Electrical Properties of Hfo2 Films Formed By Ion Assisted Deposition.
Cherkaoui, K, Negara, A, McDonnell, S, Hughes, G, Modreanu, M, Hurley, PK; (2006) Electrical Properties of Hfo2 Films Formed By Ion Assisted Deposition. Other [Details]
(2006)Special Issue - Proceedings of E-Mrs Spring Meeting Symposium L On Characterization of High-K Dielectric Materials, Nice, France, 29 May-2 June 2006 - Preface.
Dabrowski, J, Hurley, PK, Murota, J, Weber, ER; (2006) Special Issue - Proceedings of E-Mrs Spring Meeting Symposium L On Characterization of High-K Dielectric Materials, Nice, France, 29 May-2 June 2006 - Preface. Other [DOI] [Details]
(2005)Post deposition UV-induced O-2 annealing of HfO2 thin films.
Fang, Q,Liaw, I,Modreanu, M,Hurley, PK,Boyd, IW (2005) Post deposition UV-induced O-2 annealing of HfO2 thin films. Other [DOI] [Details]
(2005)Optical and electrical characterization of hafnium oxide deposited by MOCVD.
Lu, Y,Buiu, O,Hall, S,Hurley, PK (2005) Optical and electrical characterization of hafnium oxide deposited by MOCVD. Other [DOI] [Details]
(2001)Flat band voltage shift and oxide properties after rapid thermal annealing.
O'Sullivan, BJ,Hurley, PK,Cubaynes, FN,Stolk, PA,Widdershoven, FP (2001) Flat band voltage shift and oxide properties after rapid thermal annealing. Other [Details]
(2000)Interface properties of the Si(100)-SiO2 system formed by rapid thermal oxidation.
O'Sullivan, BJ,Hurley, PK,Mathewson, A,Das, JH,Daniel, AD (2000) Interface properties of the Si(100)-SiO2 system formed by rapid thermal oxidation. Other [Details]
(1998)Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures.
Leveugle, C,Hurley, PK,Mathewson, A,Moran, S,Sheehan, E,Kalnitsky, A (1998) Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures. Other [Details]
(1998)Hot carrier degradation mechanisms in sub-micron p channel MOSFETs: Impact on low frequency (l/f) noise behaviour.
Sheehan, E,Hurley, PK,Mathewson, A (1998) Hot carrier degradation mechanisms in sub-micron p channel MOSFETs: Impact on low frequency (l/f) noise behaviour. Other [Details]
(1997)Impact of the polysilicon doping level on the properties of the silicon/oxide interface in polysilicon/oxide/silicon capacitor structures.
Leveugle, C,Hurley, PK,Mathewson, A,Moran, S,Sheehan, E,Kalnitsky, A,Lepert, A,Beinglass, I,Venkatesan, M (1997) Impact of the polysilicon doping level on the properties of the silicon/oxide interface in polysilicon/oxide/silicon capacitor structures. Other [Details]
(2007)Navigation Aids In The Search For Future High-K Dielectrics: Physical and Electrical Trends.
Engstrom, O, Raeissi, B, Hall, S, Buiu, O, Lemme, MC, Gottlob, HDB, Hurley, PK, Cherkaoui, K; (2007) Navigation Aids In The Search For Future High-K Dielectrics: Physical and Electrical Trends. Other [DOI] [Details]

Honours and Awards

 YearTitleAwarding Body
2014Cork Conference Ambassador Award Cork Convention Bureau
2012Intel Outstanding Researcher Award INTEL
1985IEE Departmental Prize (1985). Liverpool University
1985William Henry McMenemey Engineering Faculty Prize (1985). Liverpool University
2009Best Presentation Award 216th ECS Meeting ECS

Professional Associations

 AssociationFunctionFrom / To
IEEE Member03-OCT-13 /

Patents

 Patent NumberTitleInventorGranted
P10945EPJunctionless Transistors for 3D Monolithic Integration of CMOS Inverters Paul Hurley05-APR-14

Conference Contributions

YearPublication
(2011)AVS 58th International Symposium and Exhibition, October 30 - November 4, 2011, Nashville Convention Center, Nashville, USA,
Eric Vogel , A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, C. L. Hinkle, R. M. Wallace (2011) A Comprehensive Electrophysical Model for the Mobility of In0.53Ga0.47As Surface Channel MOSFETs. [Invited Oral Presentation], AVS 58th International Symposium and Exhibition, October 30 - November 4, 2011, Nashville Convention Center, Nashville, USA, Nashville, USA . [Details]
(2003)Proceeding. ESSDERC 95, The Hague,
Sheehan, E.; Mathewson, A.; Kalnitsky, A.; Hurley, P. K.; Lepert, A.; Mallardeau, C.; (2003) *. [N/A], Proceeding. ESSDERC 95, The Hague, Phosphorus In The Polysilicon-TiSi2 System: Dopant Redistribution [B2736] , 01-JAN-03 - 30-DEC-99. [Details]
(2003)Proceedings of 24th European Solid State Research Conference (ESSDERC '94), Edinburgh (September),
Hurley, P. K.; Moran, S.; Wall, L.; Mathewson, A.; Mason, B.; (2003) *. [N/A], Proceedings of 24th European Solid State Research Conference (ESSDERC '94), Edinburgh (September), Mechanisms Of Low Frequency Noise In P Channel Silicon MOSFETs [B2730] , 01-JAN-03 - 30-DEC-99. [Details]
(2003)Proceedings Semiconductor Interface Specialists Conference. SISC, Charleston, SC, USA,
Hurley, P. K.; Kalnitsky, A.; Lepert, A.; Moran, S.; Mathewson, A.; (2003) *. [N/A], Proceedings Semiconductor Interface Specialists Conference. SISC, Charleston, SC, USA, Influence of the Polysilicon/Oxide Interface on the C-V Characteristics of N+ Polysilicon/Oxide/Sili , 01-JAN-03 - 30-DEC-99. [Details]
(2003)Proceedings of the European Solid State Device Research Conference (ESSDERC-93), Grenoble,
Hurley, P. K.; Wall, L.; Mathewson, A.; (2003) *. [N/A], Proceedings of the European Solid State Device Research Conference (ESSDERC-93), Grenoble, Double Polysilicon Capacitors in 1µm Analogue CMOS Technology [B2714] , 01-JAN-03 - 30-DEC-99. [Details]

Committees

 CommitteeFunctionFrom / To
Insulating Films on Semiconductors (INFOS) Member of the INFOS Scientific Committee2004 / 2014
European Mamterials Research Society Scientific Committee2014 / 2015
Workshop on Dielectrics in Microelectronics (WODIM) Scientific Committee2002 / 2014
IEEE International Integrated Reliability Workshop (IIRW) Scientific Committee and Discussion Group Leader2013 / 2014

Employment

 EmployerPositionFrom / To
Liverpool University Research Associate01-SEP-89 / 01-MAY-92
University College Cork Research Scientist04-AUG-92 / 04-AUG-94
University College Cork Senior Research Scientist04-AUG-94 / 22-NOV-12
University College Cork Senior Research Scientist and Head of Group22-NOV-12 /

Education

 YearInstitutionQualificationSubject
1990University of Liverpool PhDSemiconductor Materials and Devices
1985Unversity of Liverpool B.Eng.Electronic Engineering

Outreach Activities

 Description

Hosting Transition Year students at Tyndall

Discovery Science Exhibition Cork


Journal Activities

 JournalRoleTo / From
J Vac Sci Technol Referee-
J. Electrochem. Soc. Referee-
Applied Physics Letters Referee-
Microelectronic Engineering Referee-
Semiconductor Science And Technology Referee-
Ieee Electron Device Letters Referee-
Microelectronics Reliability Guest Editor-
Ieee Transactions On Electron Devices Referee-
J Appl Phys Referee-

Other Activities

 Description

I am a member of the technical committee of the international conference “Insulating Films on Semiconductors (INFOS)” and the International “Workshop on Dielectrics in Microelectronics (WoDiM). INFOS and WoDiM are the two main oxide conferences in Europe. Acted as Chair of the 2004 and 2014 WoDiM events in Kinsale, Co. Cork and Co-Chair of the “Characterization of High-k Materials” Symposium L at the 2006 EMRS. I have acted as the external examiner for PhD students from, Dublin City University, Trinity College Dublin, Liverpool University (x4), Manchester University (x2), University Autonoma de Barcelona and the Catholic University of Leuven. I have also acted as the internal examiner for a number of UCC PhD and MSc students Reviewer of National and EU proposals

Teaching Interests

Semiconductor materials and devices for information and communication technologies

Specialist guest lectures covering recent technology challenges and developments for state of the art transistors

Recent Postgraduates

 Graduation YearStudent NameInstitutionDegree TypeThesis Title
2013Vladimir Djara UCCPHDDevelopment of Inversion-Mode and Junctiolness InGaAs MOSFETs
2010Rathnait Long UCCPHDA Study of the Electronic and Structural Properties of the High-κ/In0.53Ga0.47As System
2009Adi Negara UCCPHDA STUDY OF ELECTRON MOBILITY IN HFO2/TIN GATE MOSFETS
2014Eamon O'Connor UCCPHDInvestigation of electrically active defects at the interface of high-k dielectrics and compound semiconductors

Current Postgraduate Students

 StudentDegree Type
Walsh Adrian Doctoral Degree (Structured)

Modules Taught

 Term (ID))TitleLinkSubject
2015Semiconductor Materials and Devices UE2003Semiconductor Materials and Devices

Internal Collaborators

 NameInstituteCountry
Prof Jim Greer TyndallIRELAND
Prof Martyn Pemble TyndallIRELAND
Dr Ian Povey TyndallIRELAND

External Collaborators

 NameOrganisation/ InstitutionCountry
Prof Paul C McIntyre Stanford UniversityU.S.A.
Prof Robert Wallace University of Texas at DallasU.S.A.
Dr Kelin Kuhn Intel Fellow INTEL CorporationU.S.A.
Dr Jean Fompeyrine IBM ZurichSWITZERLAND
Prof Enrique Miranda Universitat Autonoma de BarcelonaSPAIN
Prof John Boland Trinity College DublinIRELAND
Prof Max Lemme University of SiegenGERMANY
Dr. Richard Haight IBM YorktownU.S.A.
Prof Georg Duesberg Trinity College DublinIRELAND
Prof Gerard Ghibaudo IMEP GrenobleFRANCE
Prof Valery Afanasev Catholic University of LeuvenBELGIUM
Prof Iain Thayne Glasgow UniversitySCOTLAND
Prof Steve Hall Liverpool UniveristyUNITED KINGDOM
Prof Olof Engstrom Chalmers UniversitySWEDEN
Prof Masimmo Fischetti University of Texas at DallasU.S.A.
Dr Robert Barklie Trinity College DublinIRELAND
Prog Greg Hughes Dublin City UniversityIRELAND
Dr David McNeill Queens University BelfastUNITED KINGDOM