Research Profile

Raymond Duffy

Biography

Research Grants

 ProjectFunding
Body
Start DateEnd DateAward
Starting Investigator Research GrantScience Foundation of Ireland01-OCT-0931-DEC-15€562,547.00

Publications

Book Chapters

 YearPublication
(2014)'Silicon and germanium junctionless nanowire Transistors for Sensing and Digital Electronics Applications'
Georgiev, Y. M.; Yu, R.; Petkov, N.; Lotty, O.; Nightingale, A.; de Mello, J. C.; Duffy, R.; Holmes, J. D. (2014) 'Silicon and germanium junctionless nanowire Transistors for Sensing and Digital Electronics Applications' In: Nazarov, A.; Balestra, B.; Kilchytska, V.; Flandre, D (eds). Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting Engineering Materials. Switzerland: Springer International Publishing.   [DOI] [Details]

Peer Reviewed Journals

 YearPublication
(2013)'Impact ionization induced dynamic floating body effect in junctionless transistors'
Yu, R,Nazarov, AN,Lysenko, VS,Das, S,Ferain, I,Razavi, P,Shayesteh, M,Kranti, A,Duffy, R,Colinge, JP (2013) 'Impact ionization induced dynamic floating body effect in junctionless transistors'. Solid-State Electronics, 90 :28-33 [DOI] [Details]
(1999)'Analysis of external latch-up protection test structure design using numerical simulation'
Palser, K,Concannon, A,Duffy, R,Mathewson, A; (1999) 'Analysis of external latch-up protection test structure design using numerical simulation'. Microelectronics Reliability, 39 :647-659 [Details]
(2003)'¿A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications¿'
7. McCarthy, D., Duane, R., O¿Shea, M., Duffy, R., McCarthy, K.G., Kelleher, A.M., Concannon, A., Mathewson, A; (2003) '¿A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications¿'. IEEE Transactions on Electron Devices, 50 (7):1708-1710 [Details]
(2014)'Junctionless nanowire Transistor fabricated with high mobility Ge channel'
Yu, R.; Georgiev, Y. M.; Das, S.; Hobbs, R. G.; Povey, I. M.; Petkov, N.; Shayesteh, M.; O’Connell, D.; Holmes, J. D.; Duffy, R. (2014) 'Junctionless nanowire Transistor fabricated with high mobility Ge channel'. Physica Status Solidi-Rapid Research Letters, 8 (1):65-68   [DOI] [Details]
(2011)'NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices'
Shayesteh, M,Daunt, CLM,O'Connell, D,Djara, V,White, M,Long, B,Duffy, R (2011) 'NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices'. IEEE Transactions On Electron Devices, 58 :3801-3807 [DOI] [Details]
(2001)'Scaling embedded EEPROMs for the integration in deep submicron technologies'
Duffy, R,Concannon, A,Mathewson, A,Lane, B; (2001) 'Scaling embedded EEPROMs for the integration in deep submicron technologies'. Rna-A Publication of The Rna Society, 32 :35-42 [Details]
(0)'Advanced Process Development Using Numerical Simulation [B2746]'
Duffy, R.; Concannon, A.; Mathewson, A.; (0) 'Advanced Process Development Using Numerical Simulation [B2746]'. Iee Colloquium (Digest), 0.033 :14-01/14/06 [Details]
(2009)'Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering'
Ferain, I,Duffy, R,Collaert, N,van Dal, MJH,Pawlak, BJ,O'Sullivan, B,Witters, L,Rooyackers, R,Conard, T,Popovici, M,van Elshocht, S,Kaiser, M,Weemaes, RGR,Swerts, J,Jurczak, M,Lander, RJP,De Meyer, K (2009) 'Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering'. Solid-State Electronics, 53 :760-766 [DOI] [Details]
(2012)'Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates'
Yu, R,Das, S,Ferain, I,Razavi, P,Shayesteh, M,Kranti, A,Duffy, R,Colinge, JP (2012) 'Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates'. IEEE Transactions On Electron Devices, 59 :2308-2313 [DOI] [Details]
(2012)'Molecular dynamics simulation of the regrowth of nanometric multigate Si devices'
Marques, LA,Pelaz, L,Santos, I,Lopez, P,Duffy, R (2012) 'Molecular dynamics simulation of the regrowth of nanometric multigate Si devices'. Journal of Applied Physics, 111 [DOI] [Details]
(2011)'The curious case of thin-body Ge crystallization'
Duffy, R,Shayesteh, M,McCarthy, B,Blake, A,White, M,Scully, J,Yu, R,Kelleher, AM,Schmidt, M,Petkov, N,Pelaz, L,Marques, LA (2011) 'The curious case of thin-body Ge crystallization'. Applied Physics Letters, 99 [DOI] [Details]
(2011)'Characterization of a junctionless diode'
Yu, R,Ferain, I,Akhavan, ND,Razavi, P,Duffy, R,Colinge, JP; (2011) 'Characterization of a junctionless diode'. Applied Physics Letters, 99 [DOI] [Details]
(2010)'The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization'
Duffy, R,Shayesteh, M,White, M,Kearney, J,Kelleher, AM; (2010) 'The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization'. Applied Physics Letters, 96 [DOI] [Details]
(2003)'A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications'
Mc Carthy, D,Duane, R,O'Shea, M,Duffy, R,Mc Carthy, K,Kelliher, AM,Concannon, A,Mathewson, A; (2003) 'A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications'. IEEE Transactions On Electron Devices, 50 :1708-1711 [DOI] [Details]
(2014)'Junctionless nanowire transistor fabricated with high mobility Ge channel'
Yu, R., Georgiev, Y.M., Das, S., Hobbs, R.G., Povey, I.M., Petkov, N., Shayesteh, M., O'Connell, D., Holmes, J.D., Duffy, R. (2014) 'Junctionless nanowire transistor fabricated with high mobility Ge channel'. Physica Status Solidi - Rapid Research Letters, 8 (1):65-68   [Details]
(2013)'Atomically flat low-resistive germanide contacts formed by laser thermal anneal'
Shayesteh, M., Huet, K., Toque-Tresonne, I., Negru, R., Daunt, C.L.M., Kelly, N., O'Connell, D., Yu, R., Djara, V., Carolan, P.B., Petkov, N., Duffy, R. (2013) 'Atomically flat low-resistive germanide contacts formed by laser thermal anneal'. IEEE Transactions on Electron Devices, 60 (7):2178-2185   [Details]
(2014)'Junctionless nanowire transistor fabricated with high mobility Ge channel'
Yu, R,Georgiev, YM,Das, S,Hobbs, RG,Povey, IM,Petkov, N,Shayesteh, M,O'Connell, D,Holmes, JD,Duffy, R (2014) 'Junctionless nanowire transistor fabricated with high mobility Ge channel'. Physica Status Solidi-Rapid Research Letters, 8 :65-68 [DOI] [Details]
(2003)'A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications'
Mc Carthy, D., Duane, R., O'Shea, M., Duffy, R., Mc Carthy, K., Kelliher, A.-M., Concannon, A., Mathewson, A. (2003) 'A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications'. IEEE Transactions On Electron Devices, 50 (7):1708-1711   [Details]
(2014)'Characterisation of electrically active defects'
Duffy, R., Heringa, A. (2014) 'Characterisation of electrically active defects'. Physica Status Solidi (C) Current Topics in Solid State Physics, 11 (1):130-137   [Details]
(2014)'Laser thermal anneal formation of atomically-flat low-resistive germanide contacts'
Huet, K., Shayesteh, M., Toqué-Tresonne, I., Negru, R., Daunt, C.L.M., Kelly, N., O'Connell, D., Yu, R., Djara, V., Carolan, P., Petkov, N., Duffy, R. (2014) 'Laser thermal anneal formation of atomically-flat low-resistive germanide contacts'. Physica Status Solidi (C) Current Topics in Solid State Physics, 11 (1):169-173   [Details]

Other Journals

 YearPublication
(2003)'Boron uphill diffusion during ultrashallow junction formation'
Duffy, R., Venezia, V.C., Heringa, A., Hüsken, T.W.T., Hopstaken, M.J.P., Cowern, N.E.B., Griffin, P.B., Wang, C.C. (2003) 'Boron uphill diffusion during ultrashallow junction formation' Applied Physics Letters, 82 (21) :3647-3649.   [Details]
(1999)'SPECIAL SECTION: EU RESEARCH PROJECT PROPHECY PAPERS-Analysis of external latch-up protection test structure design using numerical simulation'
Palser, K and Concannon, A and Duffy, R and Mathewson, A (1999) 'SPECIAL SECTION: EU RESEARCH PROJECT PROPHECY PAPERS-Analysis of external latch-up protection test structure design using numerical simulation' Microelectronics Reliability, 39 (5) :647-660. [Details]
(1999)'Analysis of external latch-up protection test structure design using numerical simulation'
Palser, K., Concannon, A., Duffy, R., Mathewson, A. (1999) 'Analysis of external latch-up protection test structure design using numerical simulation' Microelectronics Reliability, 39 (5) :647-659.   [Details]
(2012)'Molecular dynamics simulation of the regrowth of nanometric multigate Si devices'
Marqués, L.A., Pelaz, L., Santos, I., López, P., Duffy, R. (2012) 'Molecular dynamics simulation of the regrowth of nanometric multigate Si devices' Journal of Applied Physics, 111 (3) .   [Details]
(2011)'NiGe contacts and junction architectures for P and As doped germanium devices'
Shayesteh, M., Daunt, C.L.L.M., O'Connell, D., Djara, V., White, M., Long, B., Duffy, R. (2011) 'NiGe contacts and junction architectures for P and As doped germanium devices' IEEE Transactions on Electron Devices, 58 (11) :3801-3807.   [Details]
(2011)'The curious case of thin-body Ge crystallization'
Duffy, R., Shayesteh, M., McCarthy, B., Blake, A., White, M., Scully, J., Yu, R., Kelleher, A.-M., Schmidt, M., Petkov, N., Pelaz, L., Marqués, L.A. (2011) 'The curious case of thin-body Ge crystallization' Applied Physics Letters, 99 (13) .   [Details]
(2010)'The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization'
Duffy, R., Shayesteh, M., White, M., Kearney, J., Kelleher, A.-M. (2010) 'The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization' Applied Physics Letters, 96 (23) .   [Details]
(2010)'Erratum: Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2010) 28 (C1H5))'
Mody, J., Duffy, R., Eyben, P., Goossens, J., Moussa, A., Polspoel, W., Berghmans, B., Van Dal, M.J.H., Pawlak, B.J., Kaiser, M., Weemaes, R.G.R., Vandervorst, W. (2010) 'Erratum: Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2010) 28 (C1H5))' Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 28 (3) .   [Details]
(2010)'Quantitative prediction of junction leakage in bulk-technology CMOS devices'
Duffy, R., Heringa, A., Venezia, V.C., Loo, J., Verheijen, M.A., Hopstaken, M.J.P., van der Tak, K., de Potter, M., Hooker, J.C., Meunier-Beillard, P., Delhougne, R. (2010) 'Quantitative prediction of junction leakage in bulk-technology CMOS devices' Solid-State Electronics, 54 (3) :243-251.   [Details]
(2009)'Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering'
Ferain, I., Duffy, R., Collaert, N., van Dal, M.J.H., Pawlak, B.J., O'Sullivan, B., Witters, L., Rooyackers, R., Conard, T., Popovici, M., van Elshocht, S., Kaiser, M., Weemaes, R.G.R., Swerts, J., Jurczak, M., Lander, R.J.P., De Meyer, K. (2009) 'Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering' Solid-State Electronics, 53 (7) :760-766.   [Details]
(2008)'Extended defects evolution in pre-amorphlsed silicon after millisecond flash anneals'
Cristiano, F., Bazizi, E.M., Fazzini, P.F., Boninelli, S., Duffy, R., Pakfar, A., Paul, S., Lerch, W. (2008) 'Extended defects evolution in pre-amorphlsed silicon after millisecond flash anneals' Materials Science Forum, 573-574 :269-277.   [Details]
(2008)'Doping strategies for FinFETs'
Pawlak, B.J., Duffy, R., De Keersgieter, A. (2008) 'Doping strategies for FinFETs' Materials Science Forum, 573-574 :333-338.   [Details]
(2008)'Si interstitial contribution of F+ implants in crystalline Si'
López, P., Pelaz, L., Duffy, R., Meunier-Beillard, P., Roozeboom, F., Van Der Tak, K., Breimer, P., Van Berkum, J.G.M., Verheijen, M.A., Kaiser, M. (2008) 'Si interstitial contribution of F+ implants in crystalline Si' Journal of Applied Physics, 103 (9) .   [Details]
(2008)'Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance'
Duffy, R., Curatola, G., Pawlak, B.J., Doornbos, G., Van Der Tak, K., Breimer, P., Van Berkum, J.G.M., Roozeboom, F. (2008) 'Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance' Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26 (1) :402-407.   [Details]
(2008)'Evolution of fluorine and boron profiles during annealing in crystalline Si'
López, P., Pelaz, L., Duffy, R., Meunier-Beillard, P., Roozeboom, F., Van Der Tak, K., Breimer, P., Van Berkum, J.G.M., Verheijen, M.A., Kaiser, M. (2008) 'Evolution of fluorine and boron profiles during annealing in crystalline Si' Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26 (1) :377-381.   [Details]
(2008)'Probing doping conformality in fin shaped field effect transistor structures using resistors'
Vandervorst, W., Jurczak, M., Everaert, J.-L., Pawlak, B.J., Duffy, R., Del-Agua-Bomiquel, J.-I., Poon, T. (2008) 'Probing doping conformality in fin shaped field effect transistor structures using resistors' Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26 (1) :396-401.   [Details]
(2008)'Deep level transient spectroscopy of ultra shallow junctions in Si formed by implantation'
Mitromara, N., Evans-Freeman, J.H., Duffy, R. (2008) 'Deep level transient spectroscopy of ultra shallow junctions in Si formed by implantation' Solid State Phenomena, 131-133 :497-502.   [Details]
(2007)'Solid phase epitaxy versus random nucleation and growth in sub- 20 nm wide fin field-effect transistors'
Duffy, R., Van Dal, M.J.H., Pawlak, B.J., Kaiser, M., Weemaes, R.G.R., Degroote, B., Kunnen, E., Altamirano, E. (2007) 'Solid phase epitaxy versus random nucleation and growth in sub- 20 nm wide fin field-effect transistors' Applied Physics Letters, 90 (24) .   [Details]
(2006)'Groups III and v impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals'
Duffy, R., Dao, T., Tamminga, Y., Van Der Tak, K., Roozeboom, F., Augendre, E. (2006) 'Groups III and v impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals' Applied Physics Letters, 89 (7) .   [Details]
(2006)'Suppression of phosphorus diffusion by carbon co-implantation'
Pawlak, B.J., Duffy, R., Janssens, T., Vandervorst, W., Felch, S.B., Collart, E.J.H., Cowern, N.E.B. (2006) 'Suppression of phosphorus diffusion by carbon co-implantation' Applied Physics Letters, 89 (6) .   [Details]
(2006)'Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth'
Aboy, M., Pelaz, L., López, P., Marqús, L.A., Duffy, R., Venezia, V.C. (2006) 'Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth' Applied Physics Letters, 88 (19) .   [Details]
(2006)'Diffusion, activation, and regrowth behavior of high dose P implants in Ge'
Satta, A., Simoen, E., Duffy, R., Janssens, T., Clarysse, T., Benedetti, A., Meuris, M., Vandervorst, W. (2006) 'Diffusion, activation, and regrowth behavior of high dose P implants in Ge' Applied Physics Letters, 88 (16) .   [Details]
(2006)'Boron pocket and channel deactivation in nMOS transistors with SPER junctions'
Duffy, R., Aboy, M., Venezia, V.C., Pelaz, L., Severi, S., Pawlak, B.J., Eyben, P., Janssens, T., Vandervorst, W., Loo, J., Roozeboom, F. (2006) 'Boron pocket and channel deactivation in nMOS transistors with SPER junctions' IEEE Transactions on Electron Devices, 53 (1) :71-76.   [Details]
(2005)'Boron diffusion in amorphous silicon'
Venezia, V.C., Duffy, R., Pelaz, L., Hopstaken, M.J.P., Maas, G.C.J., Dao, T., Tamminga, Y., Graat, P. (2005) 'Boron diffusion in amorphous silicon' Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 124-125 (SUPPL) :245-248.   [Details]
(2005)'Boron diffusion in strained and strain-relaxed SiGe'
Wang, C.C., Sheu, Y.M., Liu, S., Duffy, R., Heringa, A., Cowern, N.E.B., Griffin, P.B. (2005) 'Boron diffusion in strained and strain-relaxed SiGe' Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 124-125 (SUPPL) :39-44.   [Details]
(2005)'Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth'
Aboy, M., Pelaz, L., Barbolla, J., Duffy, R., Venezia, V.C. (2005) 'Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth' Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 124-125 (SUPPL) :205-209.   [Details]
(2005)'E-MRS 2005/Symposium D: Materials science and device issues for future Si-based technologies'
Pelaz, L., Duffy, R., Cristiano, F., Colombeau, B., Uppal, S. (2005) 'E-MRS 2005/Symposium D: Materials science and device issues for future Si-based technologies' Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 124-125 (SUPPL) :1-2.   [Details]
(2005)'Impurity redistribution due to recrystallization of preamorphized silicon'
Duffy, R., Venezia, V.C., Van Der Tak, K., Hopstaken, M.J.P., Maas, G.C.J., Roozeboom, F., Tamminga, Y., Dao, T. (2005) 'Impurity redistribution due to recrystallization of preamorphized silicon' Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23 (5) :2021-2029.   [Details]
(2005)'Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth'
Pawlak, B.J., Duffy, R., Janssens, T., Vandervorst, W., Maex, K., Smith, A.J., Cowern, N.E.B., Dao, T., Tamminga, Y. (2005) 'Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth' Applied Physics Letters, 87 (3) .   [Details]
(2005)'Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon'
Aboy, M., Pelaz, L., Marqús, L.A., López, P., Barbolla, J., Duffy, R. (2005) 'Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon' Journal of Applied Physics, 97 (10) .   [Details]
(2005)'Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface'
Duffy, R., Venezia, V.C., Loo, J., Hopstaken, M.J.P., Verheijen, M.A., Van Berkum, J.G.M., Maas, G.C.J., Tamminga, Y., Dao, T., Demeurisse, C. (2005) 'Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface' Applied Physics Letters, 86 (8) :1-3.   [Details]
(2005)'Role of silicon interstitials in boron cluster dissolution'
Aboy, M., Pelaz, L., Marqús, L.A., López, P., Barbolla, J., Duffy, R., Venezia, V.C., Griffin, P.B. (2005) 'Role of silicon interstitials in boron cluster dissolution' Applied Physics Letters, 86 (3) :1-3.   [Details]
(2004)'The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles'
Aboy, M., Pelaz, L., Marqués, L.A., Löpez, P., Barbolla, J., Venezia, V.C., Duffy, R., Griffin, P.B. (2004) 'The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles' Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 114-115 (SPEC. ISS) :193-197.   [Details]
(2004)'Effects of crystalline regrowth on dopant profiles in preamorphized silicon'
Hopstaken, M.J.P., Tamminga, Y., Verheijen, M.A., Duffy, R., Venezia, V.C., Heringa, A. (2004) 'Effects of crystalline regrowth on dopant profiles in preamorphized silicon' Applied Surface Science, 231-232 :688-692.   [Details]
(2004)'Boron diffusion in amorphous silicon and the role of fluorine'
Duffy, R., Venezia, V.C., Heringa, A., Pawlak, B.J., Hopstaken, M.J.P., Maas, G.C.J., Tamminga, Y., Dao, T., Roozeboom, F., Pelaz, L. (2004) 'Boron diffusion in amorphous silicon and the role of fluorine' Applied Physics Letters, 84 (21) :4283-4285.   [Details]
(2004)'Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon'
Duffy, R., Venezia, V.C., Heringa, A., Pawlak, B.J., Hopstaken, M.J.P., Tamminga, Y., Dao, T., Roozeboom, F., Wang, C.C., Diaz, C.H., Griffin, P.B. (2004) 'Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon' Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22 (3) :865-868.   [Details]
(2004)'Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth'
Pawlak, B.J., Lindsay, R., Susdeanu, R., Dieu, B., Geenen, L., Hoflijk, I., Richard, O., Duffy, R., Clarysse, T., Brijs, B., Vandervorst, W., Dachs, C.J.J. (2004) 'Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth' Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22 (1) :297-301.   [Details]
(2004)'Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth'
Lindsay, R., Henson, K., Vandervorst, W., Maex, K., Pawlak, B.J., Duffy, R., Surdeanu, R., Stolk, P., Kittl, J.A., Giangrandi, S., Pages, X., Van der Jeugd, K. (2004) 'Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth' Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22 (1) :306-311.   [Details]
(2001)'Scaling embedded EEPROMs for the integration in deepsubmicron technologies'
Duffy, R and Concannon, A and Mathewson, A and Lane, B (2001) 'Scaling embedded EEPROMs for the integration in deepsubmicron technologies' Microelectronics journal, 32 (1) :35-42. [Details]
(2001)'Scaling embedded EEPROMs for the integration in deep submicron technologies'
Duffy, R., Concannon, A., Mathewson, A., Lane, B. (2001) 'Scaling embedded EEPROMs for the integration in deep submicron technologies' Microelectronics Journal, 32 (1) :35-42.   [Details]

Conference Publications

 YearPublication
(1999)Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Palser, K and Concannon, A and Duffy, R and Mathewson, A (1999) 3D Numerical Simulation for Assisting External Latch-up Protection Test Structure Design Solid-State Device Research Conference, 1999. Proceeding of the 29th European , pp.508-511 [Details]
(1999)Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Duffy, R and Concannon, A and Mathewson, A and Slotboom, M and Dormans, D and Wils, N and Verhaar, R (1999) Scaling low power embedded flash EEPROMs to 0.18 um Solid-State Device Research Conference, 1999. Proceeding of the 29th European , pp.620-623 [Details]

Professional Activities

Conference Contributions

 YearPublication
(1998)Simulation based development of EEPROM devices within a 0.35 $\mu$m process,
Duffy, R and Concannon, A and Mathewson, A and de Graaf, C and Slotboom, M and Verhaar, R (1998) Simulation based development of EEPROM devices within a 0.35 $\mu$m process. [Oral Presentation], Simulation based development of EEPROM devices within a 0.35 $\mu$m process, Leuven, Belgium . [Details]

Teaching Activities

Recent Postgraduates

 Graduation YearStudent NameInstitutionDegree TypeThesis Title
2013Ran Yu University College CorkPHDA study of Silicon and Germanium junctionless transistors
2014Maryam Shayesteh University College CorkPHDNovel processes, test structures, and characterisation for future Germanium technologies

Modules Taught

 Term (ID))TitleLinkSubject
2017Processing of Integrated Circuits UE4008Processing of Integrated Circuits

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