Research Profile

Scott Monaghan

Biography

Dr Scott Monaghan is a senior member of IEEE and received a first-class honours BSc degree in mathematics and physics part-time from the Open University in Ireland in 1999 while working full-time within the industrial sector. He received the Masters of Engineering Science degree in 2002 part-time while working full-time within the research and development industrial sector, and the Ph.D. degree in 2007 (full-time) in the area of materials science, both from the University of Ireland, Cork, Ireland. He specialises in the engineering and electrical characterisation of material and electrical properties of thin film high-k oxides and alternative thin film III-V and 2D semiconductors for the benefit of nanoelectronics, multifunctional material and device integration, and energy harvesting applications. His expertise encompasses Hall-effect electromagnetic analysis and on-wafer MOSFET device electrical characterisation.

Research Interests

Alternative semiconductors to silicon, such as III-V and 2D materials, and alternative high dielectric constant gate oxides such as transition-metal oxides. Engineering and electrical characterisation of material and electrical properties of thin film high-k oxides and alternative thin film III-V and 2D semiconductors for the benefit of nanoelectronics, multifunctional material and device integration, and energy harvesting. Expertise encompasses Hall-effect electromagnetic analysis and on-wafer MOSFET device electrical characterisation.

Publications

Peer Reviewed Journals

 YearPublication
(2021)'Structural and electrical characterisation of PtS from H2S-converted Pt'
Monaghan, Scott and Coleman, Emma M and Ansari, Lida and Lin, Jun and Buttimer, Alexandra and Coleman, Patrick A and Connolly, James and Povey, Ian M and Kelleher, Bryan and Coile\'ain, Cormac \'O and others (2021) 'Structural and electrical characterisation of PtS from H2S-converted Pt'. Applied Materials Today, 25 [Details]
(2021)'Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer'
Farid, N;Brunton, A;Rumsby, P;Monaghan, S;Duffy, R;Hurley, P;Wang, MQ;Choy, KL;O'Connor, GM (2021) 'Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer'. Acs Applied Materials & Interfaces, 13 :37797-37808 [DOI] [Details]
(2021)'Application of artificial neural networks to the identification of weak electrical regions in large area MIM structures'
Munoz-Gorriz, J;Monaghan, S;Cherkaoui, K;Sune, J;Hurley, PK;Miranda, E (2021) 'Application of artificial neural networks to the identification of weak electrical regions in large area MIM structures'. Microelectronics Reliability, 126 [DOI] [Full Text] [Details]
(2021)'On the interpretation of MOS impedance data in both series and parallel circuit topologies'
Caruso, Enrico and Lin, Jun and Monaghan, Scott and Cherkaoui, Karim and Floyd, Liam and Gity, Farzan and Palestri, Pierpaolo and Esseni, David and Selmi, Luca and Hurley, Paul K (2021) 'On the interpretation of MOS impedance data in both series and parallel circuit topologies'. Solid-State Electronics, 185 [Full Text] [Details]
(2021)'Investigating interface states and oxide traps in the MoS2/oxide/Si system'
Coleman, E and Mirabelli, G and Bolshakov, P and Zhao, P and Caruso, E and Gity, F and Monaghan, S and Cherkaoui, K and Balestra, V and Wallace, RM and others (2021) 'Investigating interface states and oxide traps in the MoS2/oxide/Si system'. Solid-State Electronics, 186 [Full Text] [Details]
(2020)'Large-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality'
Lin, Jun and Monaghan, Scott and Sakhuja, Neha and Gity, Farzan and Jha, Ravindra Kumar and Coleman, Emma M and Connolly, James and Cullen, Conor P and Walsh, Lee A and Mannarino, Teresa and others (2020) 'Large-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality'. 2D Materials, 8 (2) [Details]
(2020)'The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems'
E. Caruso, J. Lin, S. Monaghan, K. Cherkaoui, F. Gity, P. Palestri, D. Esseni, L. Selmi, and P. K. Hurley (2020) 'The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems'. IEEE Transcations On Electron Devices, 67 (10) [DOI] [Details]
(2019)'Quantum Confinement-Induced Semimetal-to-Semiconductor Evolution in Large-Area Ultra-Thin PtSe2 Films Grown at 400 °C'
L. Ansari, S. Monaghan, N. McEvoy, C. Ó Coileáin, C. P. Cullen, J. Lin, R. Siris, T. Stimpel-Lindner, K. F. Burke, G. Mirabelli, R. Duffy, E. Caruso, R. E. Nagle, G. S. Duesberg, P. K. Hurley, and F. Gity (2019) 'Quantum Confinement-Induced Semimetal-to-Semiconductor Evolution in Large-Area Ultra-Thin PtSe2 Films Grown at 400 °C'. Npj 2d Materials And Applications, 3 [DOI] [Details]
(2019)'Effects of annealing temperature and ambient on Metal/PtSe2 contact alloy formation'
Mirabelli, Gioele and Walsh, Lee A and Gity, Farzan and Bhattacharjee, Shubhadeep and Cullen, Conor P and O´ Coilea´in, Cormac and Monaghan, Scott and McEvoy, Niall and Nagle, Roger and Hurley, Paul K and others (2019) 'Effects of annealing temperature and ambient on Metal/PtSe2 contact alloy formation'. ACS omega, 4 (17):17487-17493 [Details]
(2019)'Assessing the correlation between location and size of catastrophic breakdown events in high-k mim capacitors'
Mu\~noz-Gorriz, J and Blachier, D and Reimbold, G and Campabadal, F and Sune, J and Monaghan, S and Cherkaoui, K and Hurley, PK and Miranda, E (2019) 'Assessing the correlation between location and size of catastrophic breakdown events in high-k mim capacitors'. IEEE Transactions on Device and Materials Reliability, 19 (2):452-460 [Details]
(2019)'Detection of inhibitory effects in the generation of breakdown spots in HfO2-based MIM devices'
Mu\~noz-Gorriz, J and Monaghan, Scott and Cherkaoui, Karim and Su\~n\'e (2019) 'Detection of inhibitory effects in the generation of breakdown spots in HfO2-based MIM devices'. Microelectronic Engineering, 215 [Full Text] [Details]
(2018)'Wide spectral photoresponse of layered platinum diselenide-based photodiodes'
Yim, Chanyoung and McEvoy, Niall and Riazimehr, Sarah and Schneider, Daniel S and Gity, Farzan and Monaghan, Scott and Hurley, Paul K and Lemme, Max C and Duesberg, Georg S (2018) 'Wide spectral photoresponse of layered platinum diselenide-based photodiodes'. Nano letters, 18 (3):1794-1800 [Details]
(2018)'Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates'
Kennedy, Noel and Duffy, Ray and Eaton, Luke and O’Connell, Dan and Monaghan, Scott and Garvey, Shane and Connolly, James and Hatem, Chris and Holmes, Justin D and Long, Brenda (2018) 'Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates'. Beilstein journal of nanotechnology, 9 (1):2106-2113 [Details]
(2018)'Characterization of the failure site distribution in MIM devices using zoomed wavelet analysis'
Mu\~noz-Gorriz, J and Monaghan, S and Cherkaoui, K and Su\~n\'e (2018) 'Characterization of the failure site distribution in MIM devices using zoomed wavelet analysis'. Journal of Electronic Materials, 47 (9):5033-5038 [Details]
(2017)'Rhenium-doped MoS2 films'
Hallam, Toby and Monaghan, Scott and Gity, Farzan and Ansari, Lida and Schmidt, Michael and Downing, Clive and Cullen, Conor P and Nicolosi, Valeria and Hurley, Paul K and Duesberg, Georg S (2017) 'Rhenium-doped MoS2 films'. Applied Physics Letters, 111 (20) [Details]
(2017)'Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system'
Byrne, Conor and Brennan, B and Lundy, R and Bogan, J and Brady, A and Gomeniuk, YY and Monaghan, S and Hurley, PK and Hughes, G (2017) 'Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system'. Materials Science in Semiconductor Processing, 63 :227-236 [Details]
(2017)'Inversion in the In0. 53Ga0. 47As metal-oxide-semiconductor system: Impact of the In0. 53Ga0. 47As doping concentration'
O'Connor, \'Eamon and Cherkaoui, Karim and Monaghan, Scott and Sheehan, Brendan and Povey, Ian M and Hurley, Paul K (2017) 'Inversion in the In0. 53Ga0. 47As metal-oxide-semiconductor system: Impact of the In0. 53Ga0. 47As doping concentration'. Applied Physics Letters, 110 (3) [Details]
(2017)'Exploratory study and application of the angular wavelet analysis for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt structures'
Mu\~noz-Gorriz, J and Monaghan, Scott and Cherkaoui, Karim and Su\~n\'e (2017) 'Exploratory study and application of the angular wavelet analysis for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt structures'. Journal of Applied Physics, 122 (21) [Full Text] [Details]
(2017)'Spatial analysis of failure sites in large area MIM capacitors using wavelets'
Mu\~noz-Gorriz, J and Monaghan, Scott and Cherkaoui, Karim and Su\~n\'e (2017) 'Spatial analysis of failure sites in large area MIM capacitors using wavelets'. Microelectronic Engineering, 178 :10-16 [Details]
(2017)'Examining the Relationship Between Capacitance-Voltage Hysteresis and Accumulation Frequency Dispersion in InGaAs Metal-Oxide-Semiconductor Structures Based on the Response to Post-Metal Annealing'
J. Lin, S. Monaghan, K. Cherkaoui, I. M. Povey, B. Sheehan, and P. K. Hurley (2017) 'Examining the Relationship Between Capacitance-Voltage Hysteresis and Accumulation Frequency Dispersion in InGaAs Metal-Oxide-Semiconductor Structures Based on the Response to Post-Metal Annealing'. Microelectronic Engineering, 178 :204-208 [DOI] [Details]
(2016)'Back-gated Nb-doped MoS2 junctionless field-effect-transistors'
Mirabelli, Gioele and Schmidt, Michael and Sheehan, Brendan and Cherkaoui, Karim and Monaghan, Scott and Povey, Ian and McCarthy, Melissa and Bell, Alan P and Nagle, Roger and Crupi, Felice and others (2016) 'Back-gated Nb-doped MoS2 junctionless field-effect-transistors'. AIP Advances, 6 (2) [Details]
(2016)'Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2'
Mirabelli, Gioele and McGeough, Conor and Schmidt, Michael and McCarthy, Eoin K and Monaghan, Scott and Povey, Ian M and McCarthy, Melissa and Gity, Farzan and Nagle, Roger and Hughes, Greg and others (2016) 'Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2'. Journal of Applied Physics, 120 (12) [Details]
(2014)'High aspect ratio iridescent three-dimensional metal--insulator--metal capacitors using atomic layer deposition'
Burke, Micheal; Blake, Alan; Djara, Vladimir; O'Connell, Dan; Povey, Ian M.; Cherkaoui, Karim; Monaghan, Scott; Scully, Jim; Murphy, Richard; Hurley, Paul K.; Pemble, Martyn E.; Quinn, Aidan J. (2014) 'High aspect ratio iridescent three-dimensional metal--insulator--metal capacitors using atomic layer deposition'. Journal Of Vacuum Science & Technology A: Vacuum, Surfaces, And Films, 33 (1):1-5 [DOI] [Full Text] [Details]
(2015)'A study of capacitance--voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system'
Lin, Jun and Monaghan, Scott and Cherkaoui, Karim and Povey, Ian and O’Connor, \'Eamon and Sheehan, Brendan and Hurley, Paul (2015) 'A study of capacitance--voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system'. Microelectronic Engineering, 147 :273-276 [Details]
(2015)'Electrical characterisation of InGaAs on insulator structures'
Cherkaoui, K and Gomeniuk, YY and Daix, N and O’Brien, J and Blake, A and Thomas, KK and Pelucchi, E and O’Connell, D and Sheehan, B and Monaghan, S and others (2015) 'Electrical characterisation of InGaAs on insulator structures'. Microelectronic Engineering, 147 :63-66 [Full Text] [Details]
(2015)'A Study of Capacitance–Voltage Hysteresis in the HfO2/InGaAs Metal-Oxide-Semiconductor System'
J. Lin, S. Monaghan, K. Cherkaoui, I. M. Povey, É. O’Connor, B. Sheehan, and P. K. Hurley (2015) 'A Study of Capacitance–Voltage Hysteresis in the HfO2/InGaAs Metal-Oxide-Semiconductor System'. Microelectronic Engineering, 147 :273-276 [DOI] [Full Text] [Details]
(2015)'Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0. 53Ga0. 47As MOS capacitors'
O’Connor, \'E and Cherkaoui, K and Monaghan, S and Sheehan, B and Povey, IM and Hurley, PK (2015) 'Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0. 53Ga0. 47As MOS capacitors'. Microelectronic Engineering, 147 :325-329 [Details]
(2014)'Failure analysis of MIM and MIS structures using point-to-event distance and angular probability distributions'
Mas, Xavier Saura and Monaghan, Scott and Hurley, Paul K and Su\~n\'e (2014) 'Failure analysis of MIM and MIS structures using point-to-event distance and angular probability distributions'. IEEE Transactions on Device and Materials Reliability, 14 (4):1080-1090 [Full Text] [Details]
(2014)'Capacitance and conductance for an MOS system in inversion, with oxide capacitance and minority carrier lifetime extractions'
Monaghan, Scott and O’Connor, \'Eamon and Rios, Rafael and Ferdousi, Fahmida and Floyd, Liam and Ryan, Eimear and Cherkaoui, Karim and Povey, Ian M and Kuhn, Kelin J and Hurley, Paul K (2014) 'Capacitance and conductance for an MOS system in inversion, with oxide capacitance and minority carrier lifetime extractions'. IEEE Transactions on Electron Devices, 61 (12):4176-4185 [Full Text] [Details]
(2014)'Structural and optical properties of post-annealed atomic-layer-deposited HfO2 thin films on GaAs'
Bennett, NS and Cherkaoui, K and Wong, CS and O'Connor, \'E and Monaghan, S and Hurley, P and Chauhan, L and McNally, PJ (2014) 'Structural and optical properties of post-annealed atomic-layer-deposited HfO2 thin films on GaAs'. Thin solid films, 569 :104-112 [Full Text] [Details]
(2014)'Charge Trapping Characterization of LaLuO3/p-Si Interfaces at Cryogenic Temperatures'
Tyagulskyy, Igor Petrovitch and Tiagulskyi, Stanislav Igorovitch and Nazarov, Aleksey Nickolaevitch and Lysenko, Vladimir Sergeevitch and Hurley, PK and Cherkaoui, K and Monaghan, S (2014) 'Charge Trapping Characterization of LaLuO3/p-Si Interfaces at Cryogenic Temperatures'. ECS Transactions, 61 (2):55-59 [Details]
(2014)'ECS TRANSACTIONS'
Tyagulskyy, IP and Tiagulskyi, SI and Nazarov, AN and Lysenko, VS and Hurley, PK and Cherkaoui, K and Monaghan, S and Mitrovic, IZ and Weerakkody, AD and Sedghi, N and others (2014) 'ECS TRANSACTIONS'. Interface, 55 [Details]
(2014)'Diffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing'
Cabrera, W and Brennan, B and Dong, H and O'Regan, Terrance P and Povey, Ian M and Monaghan, Scott and O'Connor, \'Eamon and Hurley, Paul K and Wallace, RM and Chabal, YJ (2014) 'Diffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing'. Applied Physics Letters, 104 (1) [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X and Su\~n\'e (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [Details]
(2013)'Electrically active interface defects in the In0. 53Ga0. 47As MOS system'
Djara, V and O’Regan, TP and Cherkaoui, K and Schmidt, M and Monaghan, S and O’Connor, \'E and Povey, IM and O’Connell, D and Pemble, ME and Hurley, PK (2013) 'Electrically active interface defects in the In0. 53Ga0. 47As MOS system'. Microelectronic engineering, 109 :182-188 [Full Text] [Details]
(2013)'An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors'
Lin, Jun and Gomeniuk, Yuri Y and Monaghan, Scott and Povey, Ian M and Cherkaoui, Karim and O'Connor, \'Eamon and Power, Maire and Hurley, Paul K (2013) 'An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors'. Journal of Applied Physics, 114 (14) [Details]
(2013)'Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors'
Miranda, Enrique and Jim\'enez, David and Su\~n\'e (2013) 'Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors'. Journal of Vacuum Science \& Technology B, 31 (1) [Details]
(2013)'Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0. 53Ga0. 47As capacitors'
Monaghan, Scott and O'Connor, \'Eamon and Povey, Ian M and Sheehan, Brendan J and Cherkaoui, Karim and Hutchinson, Barry JA and Hurley, Paul K and Ferdousi, Fahmida and Rios, Rafael and Kuhn, Kelin J and others (2013) 'Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0. 53Ga0. 47As capacitors'. Journal of Vacuum Science \& Technology B, 31 (1) [Details]
(2013)'Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure'
Gomeniuk, YY and Gomeniuk, YV and Nazarov, AN and Monaghan, S and Cherkaoui, K and O'Connor, \'E and Povey, I and Djara, V and Hurley, PK (2013) 'Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure'. ECS Transactions, 58 (7):379-384 [Details]
(2013)'The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System'
P. K. Hurley, É. O’Connor, V. Djara, S. Monaghan, I. M. Povey, R. D. Long, B. Sheehan, J. Lin, P. C. McIntyre, B. Brennan, R. M. Wallace, M. E. Pemble, and K. Cherkaoui (2013) 'The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System'. IEEE Transactions on Device and Materials Reliability, 13 (4):429-443 [DOI] [Details]
(2013)'An Investigation of Capacitance-Voltage Hysteresis in Metal/High-k/In0.53Ga0.47As Metal-Oxide-Semiconductor Capacitors'
J. Lin, Y. Y. Gomeniuk, S. Monaghan, I. M. Povey, K. Cherkaoui, É. O'Connor, M. Power, and P. K. Hurley (2013) 'An Investigation of Capacitance-Voltage Hysteresis in Metal/High-k/In0.53Ga0.47As Metal-Oxide-Semiconductor Capacitors'. Journal of Applied Physics, 114   [Details]
(2012)'The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications'
Toomey, B and Cherkaoui, K and Monaghan, S and Djara, V and O’Connor, \'E and O’Connell, D and Oberbeck, L and Tois, E and Blomberg, T and Newcomb, SB and others (2012) 'The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications'. Microelectronic engineering, 94 :7-10 [Full Text] [Details]
(2012)'Can Metal/Al2O3/In0.53Ga0.47As/InP MOSCAP Properties Translate to Metal/Al2O3/In0.53Ga0.47As/InP MOSFET Characteristics?'
K. Cherkaoui, V. Djara, É. O’Connor, J. Lin, M. A. Negara, I. M. Povey, S. Monaghan, and P. K. Hurley (2012) 'Can Metal/Al2O3/In0.53Ga0.47As/InP MOSCAP Properties Translate to Metal/Al2O3/In0.53Ga0.47As/InP MOSFET Characteristics?'. ECS Transactions, 45 [DOI] [Full Text] [Details]
(2012)'ORGANIC AND INORGANIC CIRCUITS AND DEVICES-Scalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity'
Monaghan, S and Povey, IM (2012) 'ORGANIC AND INORGANIC CIRCUITS AND DEVICES-Scalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity'. Electronics Letters, 48 (4) [Details]
(2012)'Erratum: Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors [J. Electrochem. Soc., 158, G103 (2011)]'
Long, RD and Shin, B and Monaghan, S and Cherkaoui, K and Cagnon, J and Stemmer, S and McIntyre, PC and Hurley, PK (2012) 'Erratum: Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors [J. Electrochem. Soc., 158, G103 (2011)]'. Journal of the Electrochemical Society, 159 (6) [Details]
(2012)'Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric'
Djara, Vladimir and Cherkaoui, Karim and Schmidt, Michael and Monaghan, Scott and O'Connor, \'Eamon and Povey, Ian M and O'Connell, Dan and Pemble, Martyn E and Hurley, Paul K (2012) 'Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric'. IEEE transactions on electron devices, 59 (4) [Full Text] [Details]
(2012)'Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates'
O’Connor, \'Eamon and Cherkaoui, Karim and Monaghan, Scott and O’Connell, D and Povey, I and Casey, P and Newcomb, Simon B and Gomeniuk, Yuri Y and Provenzano, G and Crupi, Felice and others (2012) 'Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates'. Journal of Applied Physics, 111 (12) [Details]
(2011)'A systematic study of (NH 4) 2 S passivation (22\%, 10\%, 5\%, or 1\%) on the interface properties of the Al 2 O 3/In 0.53 Ga 0.47 As/InP system for n-type and p-type In 0.53 Ga 0.47 As epitaxial layers'
O’Connor, \'Eamon and Brennan, B and Djara, Vladimir and Cherkaoui, Karim and Monaghan, Scott and Newcomb, Simon B and Contreras, R and Milojevic, M and Hughes, Gregory and Pemble, Martyn E and others (2011) 'A systematic study of (NH 4) 2 S passivation (22\%, 10\%, 5\%, or 1\%) on the interface properties of the Al 2 O 3/In 0.53 Ga 0.47 As/InP system for n-type and p-type In 0.53 Ga 0.47 As epitaxial layers'. Journal of Applied Physics, 109 (2) [Details]
(2011)'Transport and interface states in high-$\kappa$ LaSiOx dielectric'
Gomeniuk, YY and Gomeniuk, YV and Tyagulskii, IP and Tyagulskii, SI and Nazarov, AN and Lysenko, VS and Cherkaoui, K and Monaghan, S and Hurley, PK (2011) 'Transport and interface states in high-$\kappa$ LaSiOx dielectric'. Microelectronic Engineering, 88 (7):1342-1345 [Details]
(2011)'Capacitance-voltage and interface state density characteristics of GaAs and In0. 53Ga0. 47As MOS capacitors incorporating a PECVD Si3N4 dielectric'
O'Connor, Eamon and Djara, Vladimir and Monaghan, Scott and Hurley, Paul and Cherkaoui, Karim (2011) 'Capacitance-voltage and interface state density characteristics of GaAs and In0. 53Ga0. 47As MOS capacitors incorporating a PECVD Si3N4 dielectric'. ECS Transactions, 35 (3) [Details]
(2011)'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0. 53Ga0. 47As/InP capacitors following an optimized (NH4) 2S treatment'
O’Connor, \'Eamon and Monaghan, Scott and Cherkaoui, Karim and Povey, Ian M and Hurley, Paul K (2011) 'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0. 53Ga0. 47As/InP capacitors following an optimized (NH4) 2S treatment'. Applied Physics Letters, 99 (21) [Details]
(2011)'Electrical analysis of three-stage passivated In 0.53 Ga 0.47 As capacitors with varying HfO 2 thicknesses and incorporating an Al 2 O 3 interface control layer'
Monaghan, S and O’Mahony, A and Cherkaoui, K and O’Connor, \'E and Povey, IM and Nolan, MG and O’Connell, D and Pemble, ME and Hurley, PK and Provenzano, G and others (2011) 'Electrical analysis of three-stage passivated In 0.53 Ga 0.47 As capacitors with varying HfO 2 thicknesses and incorporating an Al 2 O 3 interface control layer'. Journal of Vacuum Science \& Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 29 (1) [Details]
(2011)'Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors'
Long, RD and Shin, B and Monaghan, S and Cherkaoui, K and Cagnon, J and Stemmer, S and McIntyre, PC and Hurley, PK (2011) 'Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors'. Journal of The Electrochemical Society, 158 (5) [Details]
(2011)'Investigation of bulk defects in amorphous and crystalline HfO2 thin films'
Modreanu, M. and Monaghan, S. and Povey, I.M. and Cherkaoui, K. and Hurley, P.K. and Androulidaki, M. (2011) 'Investigation of bulk defects in amorphous and crystalline HfO2 thin films'. Microelectronic Engineering, 88 (7):1499-1502   [DOI] [Details]
(2011)'Fabrication of HfO 2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application'
Benedicto, Marcos and Galiana, Beatriz and Molina-Aldareguia, Jon M and Monaghan, Scott and Hurley, Paul K and Cherkaoui, Karim and Vazquez, Luis and Tejedor, Paloma (2011) 'Fabrication of HfO 2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application'. Nanoscale research letters, 6 (1):1-6 [Details]
(2011)'Multi-technique characterisation of MOVPE-grown GaAs on Si'
Wong, Chiu Soon; Bennett, Nick S.; McNally, Patrick J.; Galiana, B.; Tejedor, P.; Benedicto, M.; Molina-Aldareguia, J. M.; Monaghan, Scott; Hurley, Paul K.; Cherkaoui, Karim (2011) 'Multi-technique characterisation of MOVPE-grown GaAs on Si'. Microelectronic Engineering, 88 (4):472-475 [DOI] [Full Text] [Details]
(2011)'Investigation of bulk defects in amorphous and crystalline HfO2 thin films'
Modreanu, M and Monaghan, S and Povey, IM and Cherkaoui, K and Hurley, PK and Androulidaki, M (2011) 'Investigation of bulk defects in amorphous and crystalline HfO2 thin films'. Microelectronic engineering, 88 (7):1499-1502 [Details]
(2010)'Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M=Hf| Zr, x=0| 0.53) Gate Stacks'
O'Mahony, Aileen and Monaghan, Scott and Chiodo, Rosario and Povey, Ian and Cherkaoui, Karim and Nagle, Roger and O'Connor, Eamon and Long, Rathnait and Djara, Vladimir and O'Connell, Dan and others (2010) 'Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M=Hf| Zr, x=0| 0.53) Gate Stacks'. ECS Transactions, 33 (2):69-82 [Details]
(2010)'Electrical Properties of LaLuO3/Si (100) Structures Prepared by Molecular Beam Deposition'
Gomeniuk, Yuri Y and Gomeniuk, Yuri V and Nazarov, Alexei N and Hurley, Paul K and Cherkaoui, Karim and Monaghan, Scott and Gottlob, Heiner and Schmidt, Mathias and Schubert, J\"urgen and Lopes, J Marcelo J and others (2010) 'Electrical Properties of LaLuO3/Si (100) Structures Prepared by Molecular Beam Deposition'. ECS Transactions, 33 (3):221-227 [Details]
(2010)'Structural and electrical analysis of the atomic layer deposition of HfO 2/n-In 0.53 Ga 0.47 As capacitors with and without an Al 2 O 3 interface control layer'
O’Mahony, Aileen and Monaghan, Scott and Provenzano, G and Povey, Ian M and Nolan, MG and O’Connor, \'Eamon and Cherkaoui, Karim and Newcomb, Simon B and Crupi, Felice and Hurley, Paul K and others (2010) 'Structural and electrical analysis of the atomic layer deposition of HfO 2/n-In 0.53 Ga 0.47 As capacitors with and without an Al 2 O 3 interface control layer'. Applied Physics Letters, 97 (5) [Details]
(2010)'Investigation of High-$\kappa$/InxGa1-xAs Interfaces'
Cherkaoui, Karim and O'Connor, Eamon and Monaghan, Scott and Long, Rathnait D and Djara, Vladimir and O'Mahony, A and Nagle, R and Pemble, Martyn E and Hurley, Paul K (2010) 'Investigation of High-$\kappa$/InxGa1-xAs Interfaces'. ECS Transactions, 28 (2) [Details]
(2010)'Equivalent oxide thickness correction in the high-k/In0. 53Ga0. 47As/InP system'
Hurley, Paul K and Long, Rathnait and O'Regan, Terrance and O'Connor, Eamon and Monaghan, Scott and Djara, Vladimir and Negara, M Adi and O'Mahony, Aileen and Povey, Ian and Blake, Alan and others (2010) 'Equivalent oxide thickness correction in the high-k/In0. 53Ga0. 47As/InP system'. ECS Transactions, 33 (3) [Details]
(2009)'Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)'
Hurley, Paul K and O'Connor, Eamon and Monaghan, Scott and Long, Rathnait and O'Mahony, Aileen and Povey, Ian M and Cherkaoui, Karim and MacHale, John and Quinn, Aidan and Brammertz, Guy and others (2009) 'Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)'. ECS Transactions, 25 (6):113-127 [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO 2 thin films deposited on In 0.53 Ga 0.47 As surfaces by atomic layer deposition'
Long, Rathnait D and O’Connor, \'Eamon and Newcomb, Simon B and Monaghan, Scott and Cherkaoui, Karim and Casey, P and Hughes, Gregory and Thomas, Kevin K and Chalvet, F and Povey, Ian M and others (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO 2 thin films deposited on In 0.53 Ga 0.47 As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8) [Details]
(2009)'Electrical characterization of the soft breakdown failure mode in MgO layers'
Miranda, Enrique and O’Connor, E and Cherkaoui, Karim and Monaghan, Scott and Long, R and O’Connell, Deborah and Hurley, Paul K and Hughes, Greg and Casey, Patrick (2009) 'Electrical characterization of the soft breakdown failure mode in MgO layers'. Applied physics letters, 95 (1) [Details]
(2009)'Degradation dynamics and breakdown of MgO gate oxides'
Miranda, E and O’Connor, E and Hughes, G and Casey, P and Cherkaoui, K and Monaghan, S and Long, R and O’Connell, D and Hurley, PK (2009) 'Degradation dynamics and breakdown of MgO gate oxides'. Microelectronic engineering, 86 (7-9):1715-1717 [Full Text] [Details]
(2009)'Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors'
Lu, Y and Hall, S and Tan, LZ and Mitrovic, IZ and Davey, WM and Raeissi, Bahman and Engstr\"om, Olof and Cherkaoui, K and Monaghan, S and Hurley, PK and others (2009) 'Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors'. Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 27 (1):352-355 [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, Enrique and Mart\'\in-Mart\'\inez, Javier and O’Connor, E and Hughes, G and Casey, P and Cherkaoui, Karim and Monaghan, S and Long, R and O’Connell, D and Hurley, Paul K (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [Details]
(2009)'Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers'
Miranda, Enrique and O'Connor, Eamon and Hughs, Greg and Casey, Patrick and Cherkaoui, Karim and Monaghan, Scott and Long, Rathnait and O'Connell, Dan and Hurley, Paul (2009) 'Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers'. ECS Transactions, 25 (6):79-86 [Full Text] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO 2/In x Ga 1- x As interfaces using capacitance-voltage and conductance methods'
O’Connor, \'Eamon and Monaghan, Scott and Long, Rathnait D and O’Mahony, Aileen and Povey, Ian M and Cherkaoui, Karim and Pemble, Martyn E and Brammertz, Guy and Heyns, Marc and Newcomb, Simon B and others (2009) 'Temperature and frequency dependent electrical characterization of HfO 2/In x Ga 1- x As interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10) [Details]
(2009)'Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures'
Monaghan, S and Hurley, PK and Cherkaoui, K and Negara, MA and Schenk, A (2009) 'Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures'. Solid-State Electronics, 53 (4):438-444 [Details]
(2009)'$$\backslash$hbox $$TiN/ZrO$\$ \_ $$2$\$ $/Ti/Al Metal--Insulator--Metal Capacitors With Subnanometer CET Using ALD-Deposited $$\backslash$hbox $$ZrO$\$ \_ $$2$\$ $ for DRAM Applications'
Monaghan, S and Cherkaoui, K and O'connor, E and Djara, V and Hurley, PK and Oberbeck, L and Tois, E and Wilde, L and Teichert, S (2009) '$$\backslash$hbox $$TiN/ZrO$\$ \_ $$2$\$ $/Ti/Al Metal--Insulator--Metal Capacitors With Subnanometer CET Using ALD-Deposited $$\backslash$hbox $$ZrO$\$ \_ $$2$\$ $ for DRAM Applications'. IEEE electron device letters, 30 (3):219-221 [Full Text] [Details]
(2008)'Electrical, structural, and chemical properties of HfO 2 films formed by electron beam evaporation'
Cherkaoui, Karim and Monaghan, Scott and Negara, Muhammad A and Modreanu, Mircea and Hurley, Paul K and O’Connell, Dan and McDonnell, Stephen and Hughes, Gregory and Wright, S and Barklie, RC and others (2008) 'Electrical, structural, and chemical properties of HfO 2 films formed by electron beam evaporation'. Journal of Applied Physics, 104 (6) [Details]
(2007)'Stress in silicon interlayers at the Si O x/ Ge interface'
O’Callaghan, Sean and Monaghan, Scott and Elliott, Simon D and Greer, James C (2007) 'Stress in silicon interlayers at the Si O x/ Ge interface'. Applied physics letters, 90 (14) [Details]
(2007)'Atomic scale model interfaces between high-k hafnium silicates and silicon'
Monaghan, S and Greer, JC and Elliott, SD (2007) 'Atomic scale model interfaces between high-k hafnium silicates and silicon'. Physical Review B, 75 (24) [Details]
(2006)'Quantum mechanics at the core of multi-scale simulations'
Bartlett, Rodney J and McClellan, Josh and Greer, JC and Monaghan, Scott (2006) 'Quantum mechanics at the core of multi-scale simulations'. Journal of computer-aided materials design, 13 (1-3):89-109 [Details]
(2005)'Thermal decomposition mechanisms of hafnium and zirconium silicates at the atomic scale'
Monaghan, Scott and Greer, James C and Elliott, Simon D (2005) 'Thermal decomposition mechanisms of hafnium and zirconium silicates at the atomic scale'. Journal of applied physics, 97 (11) [Details]

Book Chapters

 YearPublication
(2013)'Gate stacks'
Engstr\"om, Olof and Mitrovic, IZ and Hall, S and Hurley, PK and Cherkaoui, K and Monaghan, S and Gottlob, HDB and Lemme, MC (2013) 'Gate stacks' In: Nanoscale CMOS: Innovative Materials, Modeling and Characterization. [Details]

Conference Publications

 YearPublication
(2021)7th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS'2021)
E. Caruso, J. Lin, S. Monaghan, K. Cherkaoui, L. Floyd, F. Gity, P. Palestri, D. Esseni, L. Selmi, P. K. Hurley (2021) On the Interpretation of MOS Impedance Data in Both Series and Parallel Circuit Topologies 7th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS'2021) Caen, France, , 01-SEP-21 - 03-SEP-21 [Full Text] [Details]
(2021)ECS Meeting Abstracts - IOP Science Publishing
Jun Lin, Scott Monaghan, Neha Sakhuja, Farzan Gity, Ravindra Kumar Jha, Emma Coleman, James Connolly, Conor Cullen, Lee Walsh, Teresa Mannarino, Michael Schmidt, Brendan Sheehan, Georg Duesberg, Niall Mc Evoy, Navakanta Bhat, Paul Hurley, Ian Povey, Shubhadeep Bhattacharjee (2021) Chemical Vapor Deposition of MoS2 for Back-End-of-Line Applications ECS Meeting Abstracts - IOP Science Publishing , pp.MA2021-02 1952-MA2021-02 1952   [DOI] [Details]
(2010)(NH4) 2S Passivation of High-k/In0. 53Ga0. 47As Interfaces: A Systematic Study of (NH4) 2S Concentration
O'Connor, Eamon and Brennan, Barry and Contreras, Rocio and Milojevic, Marko and Cherkaoui, Karim and Monaghan, Scott and Newcomb, SB and Pemble, Martyn E and Hughes, Greg and Wallace, Robert M and others (2010) (NH4) 2S Passivation of High-k/In0. 53Ga0. 47As Interfaces: A Systematic Study of (NH4) 2S Concentration , pp.231-238 [Details]
(2020)ECS Meeting Abstracts
Walsh, Lee and Ansari, Lida and Monaghan, Scott and Zhussupbekov, Kuanysh and Zhussupbekova, Ainur and Coile\'ain, Cormac \'O and McEvoy, Niall and Shvets, Igor V and Barton, Adam T and Hinkle, Christopher and others (2020) Transition Metal Doping of MoS2: A Correlated Experimental and Theoretical Study ECS Meeting Abstracts [Details]
(2019)2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Caruso, Enrico and Lin, Jun and Monaghan, Scott and Cherkaoui, Karim and Floyd, Liam and Gity, Farzan and Palestri, Pierpaolo and Esseni, David and Selmi, Luca and Hurley, Paul K (2019) Relationship between capacitance and conductance in MOS capacitors 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) , pp.1-4 [Details]
(2018)ECS Meeting Abstracts
Coleman, Emma and Monaghan, Scott and Gity, Farzan and Schmidt, Michael and Connolly, James and Lin, Jun and Walsh, Lee and Cherkaoui, Karim and O'Neill, Katie and McEvoy, Niall and others (2018) Large Area Growth of MoS2 by Chemical Vapour Deposition ECS Meeting Abstracts [Details]
(2018)ECS Meeting Abstracts
Ryan, Louise P and Walsh, Adrian and McCarthy, Melissa M and Monaghan, Scott and Modreanu, M and Romanitan, Cosmin and Chaix-Pluchery, Odette and O'Brien, S and Pemble, Martyn E and Povey, Ian M (2018) Atomic Layer Deposition of ZnO and Doped ZnO As Alternative Transparent Conducting Oxides for Photovoltaics ECS Meeting Abstracts [Details]
(2018)Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
E. Caruso, J. Lin, K. F. Burke, K. Cherkaoui, D. Esseni, F. Gity, S. Monaghan, P. Palestri, P. Hurley, and L. Selmi (2018) Profiling Border-Traps by TCAD Analysis of Multifrequency CV-curves in Al2O3/InGaAs Stacks Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) [DOI] [Details]
(2017)2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC)
Gity, Farzan and Ansari, Lida and Monaghan, Scott and Mirabelli, Gioele and Torchia, Pasqualino and Hydes, Alan and Schmidt, Michael and Sheehan, Brendan and McEvoy, Niall and Hallam, Toby and others (2017) Ex-situ plasma doping of MoS 2 thin films synthesised by thermally assisted conversion process: Simulations and experiment 2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC) , pp.175-176 [Full Text] [Details]
(2017)2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS)
Torchia, Pasqualino and Pampili, Pietro and O'Connell, John and O'Brien, Joe and White, Mary and Schmidt, Michael and Sheehan, Brendan and Waldron, Finbarr and Holmes, Justin D and Monaghan, Scott and others (2017) Influence of free radical surface activation on Si/SiC heterogeneous integration by direct wafer bonding 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS) [Details]
(2017)2017 47th European Solid-State Device Research Conference (ESSDERC)
Mirabelli, Gioele and Gity, Farzan and Monaghan, Scott and Hurley, Paul K and Duffy, Ray (2017) Impact of impurities, interface traps and contacts on MoS 2 MOSFETs: Modelling and experiments 2017 47th European Solid-State Device Research Conference (ESSDERC) , pp.288-291 [Details]
(2017)ECS Meeting Abstracts
Hurley, PK and Monaghan, Scott and O'Connor, Eamon and Caruso, Enrico and Cherkaoui, Karim and Floyd, Liam and Povey, Ian M and Millar, David Alan John and Peralagu, Uthayasankaran and Thayne, Iain G (2017) The Inversion Behaviour of Narrow Band Gap Mos Systems: Experimental Observations, Physics Based Simulations and Applications ECS Meeting Abstracts [Details]
(2017)2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
Monaghan, Scott and Gity, Farzan and Duffy, Ray and Mirabelli, Gioele and McCarthy, Melissa and Cherkaoui, Karim and Povey, Ian M and Nagle, Roger E and Hurley, Paul K and Lindemuth, Jeffrey R and others (2017) Hall-effect mobility for a selection of natural and synthetic 2D semiconductor crystals 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) , pp.27-30 [Full Text] [Details]
(2016)ECS Meeting Abstracts
Mirabelli, Gioele and Duffy, Ray and Hurley, PK and Monaghan, Scott and Cherkaoui, Karim and Schmidt, Michael and Sheehan, Brendan and Povey, Ian M and McCarthy, Melissa and Nagle, Roger and others (2016) Mo-Based Transition-Metal-Dichalcogenide Junctionless Field-Effect-Transistors ECS Meeting Abstracts [Details]
(2015)11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)
Y.-C. Fu, U. Peralagu, O. Ignatova, X. Li, R. Droopad, I. Thayne, J. Lin, I. Povey, S. Monaghan, and P. Hurley (2015) Energy-Band Parameter of Atomic Layer Deposited Al2O3 & Sulphur Passivated Molecular Beam Epitaxially Grown (110) In0.53Ga0.47As Surfaces 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) [DOI] [Details]
(2015)ECS Meeting Abstracts
Hurley, PK and Gomeniuk, Yuri and Lin, Jun and Monaghan, Scott and Povey, Ian M and Pemble, Martyn E and Hutchinson, BJ and Sheehan, Brendan and Djara, Vladimir and O'Connor, Eamon and others (2015) An Investigation of the InGaAs MOS System for Future High Mobility Channel Applications ECS Meeting Abstracts [Details]
(2014)2014 IEEE International Integrated Reliability Workshop Final Report (IIRW
J. Lin, S. Monaghan, K. Cherkaoui, I. M. Povey, É. O’Connor, B. Sheehan, and P. K. Hurley (2014) A Study of Capacitance-Voltage Hysteresis in HfO2/InGaAs Metal-Oxide-Semiconductor Systems 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW [DOI] [Full Text] [Details]
(2012)2012 13th International Conference on Ultimate Integration on Silicon (ULIS)
Djara, V and Cherkaoui, K and Schmidt, M and Gomeniuk, YY and O'Connor, \'E and Povey, IM and O'Connell, D and Monaghan, S and Pemble, ME and Hurley, PK (2012) Study of interface and oxide defects in high-k/In 0.53 Ga 0.47 As n-MOSFETs 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) , pp.29-32 [Full Text] [Details]
(2012)ECS Meeting Abstracts
Cherkaoui, Karim and Djara, Vladimir and O'Connor, Eamon and Lin, Jun and Negara, Muhammad A and Povey, Ian M and Monaghan, Scott and Hurley, Paul K (2012) Can Metal/Al2O3/In0. 53Ga0. 47As/InP MOSCAP Properties Translate to In0. 53Ga0. 47As MOSFET Characteristics ECS Meeting Abstracts [Details]
(2012)2012 28th International Conference on Microelectronics Proceedings
Miranda, E and Jim\'enez, D and Su\~n\'e (2012) Spatial statistics for micro/nanoelectronics and materials science 2012 28th International Conference on Microelectronics Proceedings , pp.23-30 [Full Text] [Details]
(2011)ECS Meeting Abstracts
O'Connor, Eamon and Djara, Vladimir and Monaghan, Scott and Hurley, Paul and Cherkaoui, Karim (2011) Improved Capacitance-Voltage Characteristics of MOS Capacitors on GaAs Incorporating a PECVD Deposited Si3N4 Dielectric Layer ECS Meeting Abstracts [Details]
(2011)Advanced Materials Research
Gomeniuk, YY and Gomeniuk, YV and Nazarov, A and Hurley, PK and Cherkaoui, Karim and Monaghan, Scott and Hellstr\"om, Per Erik and Gottlob, HDB and Schubert, J and Lopes, JMJ (2011) Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs Advanced Materials Research , pp.87-93 [Details]
(2010)ECS Meeting Abstracts
Hurley, Paul K and O'Connor, Eamon and O'Regan, Terrance and Monaghan, Scott and Long, Rathnait and Djara, Vladimir and Negara, M Adi and O'Mahony, Aileen and Povey, Ian and Blake, Alan and others (2010) Fixed Charge, Interface States and Equivalent Oxide Thickness Correction in the High-k/In0. 53Ga0. 47As System ECS Meeting Abstracts [Details]
(2010)ECS Meeting Abstracts
O'Mahony, Aileen and Monaghan, Scott and Chiodo, Rosario and Povey, Ian and Blake, Alan and Cherkaoui, Karim and Nagle, Roger and O'Connor, Eamon and Long, Rathnait and Djara, Vladimir and others (2010) Structural and Electrical Analysis of Thin Interface Control Layer Effects of MgO or Al2O3 Deposited by Atomic Layer Deposition, Incorporated at the High-k/IIIV Interface of MO2/InxGa1-xAs (M=Hf| Zr, x=0| 0.53) Gate in Metal-Oxide-Semiconductor Capacitors ECS Meeting Abstracts [Details]
(2010)ECS Meeting Abstracts
Cherkaoui, Karim and O'Connor, Eamon and Monaghan, Scott and Long, Rathnait and Djara, Vladimir and Hurley, Paul K (2010) Investigation of High-$\kappa$ Dielectric/InxGa1-xAs Interfaces ECS Meeting Abstracts [Full Text] [Details]
(2009)ECS Meeting Abstracts
Hurley, Paul K and O'Connor, Eamon and Monaghan, Scott and Long, Rathnait and O'Mahony, Aileen and Povey, Ian M and Cherkaoui, Karim and Pemble, Martyn and MacHale, John and Quinn, Aidan and others (2009) Capacitance-Voltage and Conductance Analysis of High-k/InxGa1-xAs Structures (x=0, 0.15, 0.3, and 0.53) ECS Meeting Abstracts [Details]
(2009)2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
Miranda, E and O'Connor, E and Hughes, G and Casey, P and Cherkaoui, K and Monaghan, S and Long, R and O'Connell, D and Hurley, PK (2009) Post-breakdown conduction in metal gate/MgO/InP structures 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits , pp.71-74 [Full Text] [Details]
(2009)2009 IEEE International Reliability Physics Symposium
Miranda, E and O'Connor, E and Hughes, G and Casey, P and Cherkaoui, K and Monaghan, S and Long, R and O'Connell, D and Hurley, PK (2009) Soft breakdown in MgO dielectric layers 2009 IEEE International Reliability Physics Symposium , pp.688-691 [Full Text] [Details]
(2008)2008 9th International Conference on Ultimate Integration of Silicon
Monaghan, S and Hurley, PK and Cherkaoui, K and Negara, MA and Schenk, A (2008) Determination of physical parameters for HfO 2/SiO x/TiN MOSFET gate stacks by electrical characterization and reverse modeling 2008 9th International Conference on Ultimate Integration of Silicon , pp.107-110 [Details]
(2008)WODIM, Berlin, June 2008
Lu, Y and Hall, S and Mitrovic, IZ and Davey, WM and Raeissi, Bahman and Engstr\"om, Olof and Cherkaoui, K and Monaghan, S and Hurley, PK and Gottlob, HDB and others (2008) Leakage current effects on CV plots of high-k MOS capacitors WODIM, Berlin, June 2008 [Details]
(2008)Semiconductor Interface Specialists Conference, Date: 2008/12/11-2008/12/11, Location: San Diego, CA USA
O'Connor, E and Long, RD and Monaghan, S and Brammertz, Guy and Cherkaoui, K and O'Mahony, A and Povey, IM and Pemble, ME and Heyns, Marc and Afanas' ev, Valeri and others (2008) Temperature dependent capacitance-voltage and conductance-voltage characterisation of the HfO2 Semiconductor Interface Specialists Conference, Date: 2008/12/11-2008/12/11, Location: San Diego, CA USA [Details]
(2002)7th Irish Atomistic Simulators Meeting Trinity College Dublin
Monaghan, Scott and Elliott, Simon and Greer, Jim (2002) 4.12 Structure and Stability of the Zirconium and Hafnium Pseudo--Binary Oxides for High--K Dielectric Applications 7th Irish Atomistic Simulators Meeting Trinity College Dublin [Details]
(2002)7th Irish Atomistic Simulators Meeting Trinity College Dublin
Greer, Jim and Larsson, Andreas and Delaney, Paul and Elliott, Simon and Nolan, Mick and Monaghan, Scott and Pinto, Henry and Cheng, Mr and O’Reilly, Eoin and Pereira, Mauro and others (2002) 2 Participants and Emails 7th Irish Atomistic Simulators Meeting Trinity College Dublin [Details]

Published Reports

 YearPublication
(2016)Single crystal high dielectric constant material and method for making same.
Monaghan, Scott and Povey, Ian (2016) Single crystal high dielectric constant material and method for making same. . [Details]
(2007)First Principles Modelling of Interfacial Systems of High-k Hafnium Silicates on Si (100) and on Si (110).
Monaghan, Scott (2007) First Principles Modelling of Interfacial Systems of High-k Hafnium Silicates on Si (100) and on Si (110). . [Details]
(2002)High-K Gate Dielectris Simulations: Structure and Stability of the Zirconium and Hafnium Pseudo-binary Oxides.
Monaghan, Scott (2002) High-K Gate Dielectris Simulations: Structure and Stability of the Zirconium and Hafnium Pseudo-binary Oxides. . [Details]

Professional Activities

Professional Associations

 AssociationFunctionFrom / To
Institute of Electrical and Electronics Engineers (IEEE) Senior Member IEEE Senior Member/

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