Research Profile

Scott Monaghan

Biography

Dr Scott Monaghan is a senior member of IEEE and received a first-class honours BSc degree in mathematics and physics part-time from the Open University, Ireland in 1999 while working full-time within the industrial sector. He received the Masters of Engineering Science degree in 2002 part-time while also working full-time within the industrial sector, and the Ph.D. degree in 2007 (full-time) in the area of materials science, both from University College Cork, Cork, Ireland. He specialises in the engineering of materials science for the benefit of nanoelectronics; electrical characterisation of devices using high dielectric constant oxides for integrated electronics, primarily employing new material systems. For digital and analogue electronics, devices investigated are metal-oxide-semiconductor capacitors or field-effect transistors; and metal-insulator-metal capacitors, respectively.

Research Interests

Oxide theory/simulation and the experimental electrical characterisation of devices using high dielectric constant oxides for integrated electronics, primarily employing new material systems. For digital and analogue electronics, devices investigated are metal-oxide-semiconductor capacitors or field-effect transistors; and metal-insulator-metal capacitors, respectively.

Publications

Peer Reviewed Journals

 YearPublication
(2015)'Electrical characterisation of InGaAs on insulator structures'
K Cherkaoui, YY Gomeniuk, N Daix, J O’Brien, A Blake, KK Thomas, E Pelucchi, D O’Connell, B Sheehan, S Monaghan, D Caimi, L Czornomaz, E Uccelli, PK Hurley (2015) 'Electrical characterisation of InGaAs on insulator structures'. Microelectronic Engineering, 147 (INFOS Special Issue):63-66 [DOI] [Details]
(2015)'A study of capacitance–voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system'
Jun Lin, Scott Monaghan, Karim Cherkaoui, Ian Povey, Éamon O’Connor, Brendan Sheehan, Paul Hurley (2015) 'A study of capacitance–voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system'. Microelectronic Engineering, 147 (INFOS Special Issue):273-276 [DOI] [Details]
(2015)'Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0.53Ga0.47As MOS capacitors'
É O’Connor, K Cherkaoui, S Monaghan, B Sheehan, IM Povey, PK Hurley (2015) 'Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0.53Ga0.47As MOS capacitors'. Microelectronic Engineering, 147 (INFOS Special Issue):325-329 [DOI] [Details]
(2015)'High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition'
Micheal Burke, Alan Blake, Vladimir Djara, Dan O'Connell, Ian M. Povey, Karim Cherkaoui, Scott Monaghan, Jim Scully, Richard Murphy, Paul K. Hurley, Martyn E. Pemble and Aidan J. Quinn (2015) 'High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition'. Journal of Vacuum Science & Technology A, 33 (1) [DOI] [Details]
(2014)'Failure Analysis of MIM and MIS Structures Using Point-to-Event Distance and Angular Probability Distributions'
X Saura, Scott Monaghan, Paul K Hurley, Jordi Sune, Enrique Miranda (2014) 'Failure Analysis of MIM and MIS Structures Using Point-to-Event Distance and Angular Probability Distributions'. IEEE Transactions on Device and Materials Reliability, 14 (4):1080-1090 [DOI] [Details]
(2014)'Capacitance and Conductance for an MOS System in Inversion, with Oxide Capacitance and Minority Carrier Lifetime Extractions'
Scott Monaghan, Eamon O Connor, Rafael Rios, Fahmida Ferdousi, Liam Floyd, Eimear Ryan, Karim Cherkaoui, Ian M Povey, Kelin J Kuhn, Paul K Hurley (2014) 'Capacitance and Conductance for an MOS System in Inversion, with Oxide Capacitance and Minority Carrier Lifetime Extractions'. IEEE Transactions On Electron Devices, 61 (12):4176-4185 [DOI] [Details]
(2014)'Charge Trapping Characterization of LaLuO3/p-Si Interfaces at Cryogenic Temperatures'
Tyagulskyy, Igor Petrovitch and Tiagulskyi, Stanislav Igorovitch and Nazarov, Aleksey Nickolaevitch and Lysenko, Vladimir Sergeevitch and Hurley, PK and Cherkaoui, K and Monaghan, S (2014) 'Charge Trapping Characterization of LaLuO3/p-Si Interfaces at Cryogenic Temperatures'. ECS Transactions, 61 (2):55-59 [Details]
(2014)'Structural and optical properties of post-annealed atomic-layer-deposited HfO 2 thin films on GaAs'
Bennett, NS and Cherkaoui, K and Wong, CS and O'Connor, \'E and Monaghan, S and Hurley, P and Chauhan, L and McNally, PJ (2014) 'Structural and optical properties of post-annealed atomic-layer-deposited HfO 2 thin films on GaAs'. Thin Solid Films, 569 :104-112 [Details]
(2014)'Charge Trapping Characterization of LaLuO3/p-Si Interfaces at Cryogenic Temperatures'
Igor Petrovitch Tyagulskyy, Stanislav Igorovitch Tiagulskyi, Aleksey Nickolaevitch Nazarov, Vladimir Sergeevitch Lysenko, PK Hurley, K Cherkaoui, S Monaghan (2014) 'Charge Trapping Characterization of LaLuO3/p-Si Interfaces at Cryogenic Temperatures'. Electrochemical Society Transactions, 61 (2):55-59 [DOI] [Details]
(2014)'Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing'
Cabrera, W,Brennan, B,Dong, H,O'Regan, TP,Povey, IM,Monaghan, S,O'Connor, E,Hurley, PK,Wallace, RM,Chabal, YJ (2014) 'Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing'. Applied Physics Letters, 104 [DOI] [Details]
(2013)'The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System'
Paul K. Hurley, Éamon O’Connor, Vladimir Djara, Scott Monaghan, Ian M. Povey, Rathnait D. Long, Brendan Sheehan, Jun Lin, Paul C. McIntyre, Barry Brennan, Robert M. Wallace, Martyn E. Pemble, and Karim Cherkaoui (2013) 'The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System'. IEEE Transactions on Device and Materials Reliability, 13 (4):429-443   [DOI] [Details]
(2013)'Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors'
Miranda, E,Jimenez, D,Sune, J,O'Connor, E,Monaghan, S,Povey, I,Cherkaoui, K,Hurley, PK (2013) 'Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors'. Journal of Vacuum Science & Technology B, 31 [DOI] [Details]
(2013)'Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors'
Monaghan, S. and O'Connor, E. and Povey, I.M. and Sheehan, B.J. and Cherkaoui, K. and Hutchinson, B.J.A. and Hurley, P.K. and Ferdousi, F. and Rios, R. and Kuhn, K.J. and Rahman, A. (2013) 'Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors'. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 31 (1)   [Details]
(2013)'Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure'
Gomeniuk, YY and Gomeniuk, YV and Nazarov, AN and Monaghan, S and Cherkaoui, K and O'Connor, \'E and Povey, I and Djara, V and Hurley, PK (2013) 'Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure'. ECS Transactions, 58 (7):379-384 [Details]
(2013)'An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors'
Lin, J., Gomeniuk, Y.Y., Monaghan, S., Povey, I.M., Cherkaoui, K., O'Connor, É., Power, M., Hurley, P.K. (2013) 'An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors'. Journal of Applied Physics, 114 (14) [DOI] [Details]
(2013)'Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors'
Miranda, Enrique and Jim\'enez, David and Su\~n\'e (2013) 'Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors'. Journal of Vacuum Science \& Technology B, 31 (1) [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'Electrically active interface defects in the In0.53Ga0.47As MOS system'
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) 'Electrically active interface defects in the In0.53Ga0.47As MOS system'. Microelectronic Engineering, 109 :182-188 [DOI] [Details]
(2013)'The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System'
Hurley, Paul K and O'Connor, Eamon and Djara, Vladimir and Monaghan, Scott and Povey, Ian M and Long, Rathnait D and Sheehan, Brendan and Lin, Jun and McIntyre, Paul C and Brennan, Barry and others (2013) 'The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System'. Device and Materials Reliability, IEEE Transactions on, 13 (4):429-443 [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2013)'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) 'Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics'. Journal of Applied Physics, 114 (15) [DOI] [Details]
(2012)'Scalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity'
Monaghan, S and Povey, IM (2012) 'Scalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity'. Electronics letters, 48 (4):230-232 [Details]
(2012)'Scalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity'
Monaghan, S,Povey, IM (2012) 'Scalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity'. Electronics Letters, 48 :230-231 [DOI] [Details]
(2012)'Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates'
O'Connor, E,Cherkaoui, K,Monaghan, S,O'Connell, D,Povey, I,Casey, P,Newcomb, SB,Gomeniuk, YY,Provenzano, G,Crupi, F,Hughes, G,Hurley, PK (2012) 'Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates'. Journal of Applied Physics, 111 (12):124104-1-124104-7 [DOI] [Details]
(2012)'Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103))'
Long, R.D. and Shin, B. and Monaghan, S. and Cherkaoui, K. and Cagnon, J. and Stemmer, S. and McIntyre, P.C. and Hurley, P.K. (2012) 'Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103))'. Journal of the Electrochemical Society, 159 (6)   [DOI] [Details]
(2012)'Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?'
Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K. (2012) 'Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?'. Electrochemical Society Transactions, 45 (3):79-88 [DOI] [Details]
(2012)'The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications'
Toomey, B. and Cherkaoui, K. and Monaghan, S. and Djara, V. and O'Connor, E. and O'Connell, D. and Oberbeck, L. and Tois, E. and Blomberg, T. and Newcomb, S.B. and Hurley, P.K. (2012) 'The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications'. Microelectronic Engineering, 94 :7-10 [DOI] [Details]
(2012)'Impact of Forming Gas Annealing on the Performance of Surface-Channel MOSFETs With an ALD Gate Dielectric'
Djara, Vladimir and Cherkaoui, Karim and Schmidt, Michael and Monaghan, Scott and O'Connor, Eamon and Povey, Ian M and O'Connell, Dan and Pemble, Martyn E and Hurley, Paul K (2012) 'Impact of Forming Gas Annealing on the Performance of Surface-Channel MOSFETs With an ALD Gate Dielectric'. Electron Devices, IEEE Transactions on, 59 (4):1084-1090 [Details]
(2011)'Electrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs'
Gomeniuk, Y.Y.a and Gomeniuk, Y.V.a and Nazarov, A.N.a and Hurley, P.K.b and Cherkaoui, K.b and Monaghan, S.b and Hellström, P.-E.c and Gottlob, H.D.B.d and Schubert, J.e and Lopes, J.M.J.e (2011) 'Electrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs'. Advanced Materials Research, 276 :87-93   [Details]
(2011)'A systematic study of (NH4) 2S passivation (22\%, 10\%, 5\%, or 1\%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers'
O’Connor, \'E and Brennan, B and Djara, V and Cherkaoui, K and Monaghan, S and Newcomb, SB and Contreras, R and Milojevic, M and Hughes, G and Pemble, ME and others (2011) 'A systematic study of (NH4) 2S passivation (22\%, 10\%, 5\%, or 1\%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers'. Journal of Applied Physics, 109 (2) [Details]
(2011)'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment'
O'Connor, E. and Monaghan, S. and Cherkaoui, K. and Povey, I.M. and Hurley, P.K. (2011) 'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment'. Applied Physics Letters, 99 (21):212901-1-212901-3 [DOI] [Details]
(2011)'Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application'
Benedicto, Marcos and Galiana, Beatriz and Molina-Aldareguia, Jon M and Monaghan, Scott and Hurley, Paul K and Cherkaoui, Karim and Vazquez, Luis and Tejedor, Paloma (2011) 'Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application'. Nanoscale research letters, 6 (1):1-6 [Details]
(2011)'Investigation of bulk defects in amorphous and crystalline HfO2 thin films'
Modreanu, M, Monaghan, S, Povey, IM, Cherkaoui, K, Hurley, PK, Androulidaki, M (2011) 'Investigation of bulk defects in amorphous and crystalline HfO2 thin films'. Microelectronic Engineering, 88 (7):1499-1502 [DOI] [Details]
(2011)'Multi-technique characterisation of MOVPE-grown GaAs on Si'
Wong, CS,Bennett, NS,McNally, PJ,Galiana, B,Tejedor, P,Benedicto, M,Molina-Aldareguia, JM,Monaghan, S,Hurley, PK,Cherkaoui, K (2011) 'Multi-technique characterisation of MOVPE-grown GaAs on Si'. Microelectronic Engineering, 88 (4):472-475 [DOI] [Details]
(2011)'Capacitance-Voltage and Interface State Density Characteristics of GaAs and In0. 53Ga0. 47As MOS Capacitors Incorporating a PECVD Si3N4 Dielectric'
O'Connor, Eamon and Djara, Vladimir and Monaghan, Scott and Hurley, Paul and Cherkaoui, Karim (2011) 'Capacitance-Voltage and Interface State Density Characteristics of GaAs and In0. 53Ga0. 47As MOS Capacitors Incorporating a PECVD Si3N4 Dielectric'. ECS Transactions, 35 (3):415-430 [Details]
(2011)'Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors'
Long, R. D., Shin, B., Monaghan, S., Cherkaoui, K., Cagnon, J., Stemmer, S., McIntyre, P. C., Hurley, P.K.; (2011) 'Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors'. Journal of the Electrochemical Society, 158 :103-107 [DOI] [Details]
(2011)'Transport and interface states in high-$\kappa$ LaSiOx dielectric'
Gomeniuk, YY and Gomeniuk, YV and Tyagulskii, IP and Tyagulskii, SI and Nazarov, AN and Lysenko, VS and Cherkaoui, K and Monaghan, S and Hurley, PK (2011) 'Transport and interface states in high-$\kappa$ LaSiOx dielectric'. Microelectronic Engineering, 88 (7):1342-1345 [Details]
(2011)'Electrical analysis of three-stage passivated In0. 53Ga0. 47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer'
Monaghan, S and O’Mahony, A and Cherkaoui, K and O’Connor, \'E and Povey, IM and Nolan, MG and O’Connell, D and Pemble, ME and Hurley, PK and Provenzano, G and others (2011) 'Electrical analysis of three-stage passivated In0. 53Ga0. 47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer'. Journal of Vacuum Science \& Technology B, 29 (1) [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) 'Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods'. Applied Physics Letters, 94 (10):102902-1-102902-3 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition'. Journal of Applied Physics, 106 (8):084508-1-084508-7 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI] [Details]
(2009)'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) 'Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks'. Microelectronics Reliability, 49 (9-11):1052-1055 [DOI]