Felipe's research interests are
2014- Present, Nanoelectronics (UE6005)
Biography
Felipe Murphy-Armando is Senior Researcher at the Quantum Modelling Team in the Materials Theory Group in Tyndall National Institute, UCC.
Research Interests
I am interested on the effects of electron scattering on the transport, thermoelectric and optical properties of materials.Felipe's research interests are
- The calculation of the resistance, piezoresistance and thermoelectricity in materials from first principles,
- The effect of strain on the electron-phonon and alloy scattering of alloys from first principles,
- Understanding the heating processes in nanowires,
- Time dependent energy and momentum relaxation in excited materials,
- Photoluminescence in Defect and Strain Engineered materials, such as Ge/InGaAs and Ge Defect Engineered Quantum Dots (Ge DEQDs).
Research Grants
| Project | Funding Body | Start Date | End Date | Award | |
|---|---|---|---|---|---|
| Orbitron: Spin, charge and light polarisation control and characterisation of CMOS compatible light sources - Leaner Future Networks. | Science Foundation of Ireland | 31-MAY-20 | 31-MAY-24 | €519,202.00 |
Publications
Peer Reviewed Journals
| Year | Publication | |
|---|---|---|
| (2019) | 'Ultrafast Relaxation of Symmetry-Breaking Photo-Induced Atomic Forces' O'Mahony S.;Murphy-Armando F.;Murray É.;Querales-Flores J.;Savic I.;Fahy S. (2019) 'Ultrafast Relaxation of Symmetry-Breaking Photo-Induced Atomic Forces'. Physical Review Letters, 123 (8) [DOI] [Details] | |
| (2019) | 'Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first-principles calculations' Murphy-Armando, F (2019) 'Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first-principles calculations'. Journal of Applied Physics, 126 [DOI] [Details] | |
| (2018) | 'Acoustic deformation potentials of n-type PbTe from first principles' Murphy, AR;Murphy-Armando, F;Fahy, S;Savic, I (2018) 'Acoustic deformation potentials of n-type PbTe from first principles'. Physical Review B, 98 [DOI] [Details] | |
| (2018) | 'Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies' Saladukha, Dzianis; Clavel, M. B.; Murphy-Armando, Felipe; Greene-Diniz, Gabriel; Grüning, M.; Hudait, Mantu; Ochalski, Tomasz J. (2018) 'Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies'. Physical Review B, 97 (19):195304-195304 [DOI] [Full Text] [Details] | |
| (2015) | 'Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices' Michael Clavel, Dzianis Saladukha, Patrick S Goley, Tomasz J Ochalski, Felipe Murphy-Armando, Robert J Bodnar, Mantu K Hudait (2015) 'Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices'. ACS applied materials & interfaces, 7 (48):26470-26481 [DOI] [Details] | |
| (2014) | 'Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current' Shayesteh, M,O' Connell, D,Gity, F,Murphy-Armando, P,Yu, R,Huet, K,Toque-Tresonne, I,Cristiano, F,Boninelli, S,Henrichsen, HH,Nielsen, PF,Petersen, DH,Duffy, R (2014) 'Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current'. IEEE Transactions On Electron Devices, 61 :4047-4055 [DOI] [Details] | |
| (2013) | 'Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers' Pavarelli, N,Ochalski, TJ,Murphy-Armando, F,Huo, Y,Schmidt, M,Huyet, G,Harris, JS (2013) 'Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers'. Physical Review Letters, 110 [DOI] [Details] | |
| (2012) | 'Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures (vol 109, 113703, 2011)' Murphy-Armando, F;Fahy, S (2012) 'Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures (vol 109, 113703, 2011)'. Journal of Applied Physics, 112 [DOI] [Details] | |
| (2012) | 'Giant piezoresistance in silicon-germanium alloys' Murphy-Armando, F,Fahy, S (2012) 'Giant piezoresistance in silicon-germanium alloys'. Physical Review B, 86 [DOI] [Full Text] [Details] | |
| (2012) | 'First-principles investigation of the alloy scattering potential in dilute Si1-xCx' Vaughan, MP,Murphy-Armando, F,Fahy, S (2012) 'First-principles investigation of the alloy scattering potential in dilute Si1-xCx'. Physical Review B, 85 [DOI] [Full Text] [Details] | |
| (2011) | 'Effect of strain on the deformation potentials in Ge-like SiGe' Murphy-Armando, F;Fahy, S (2011) 'Effect of strain on the deformation potentials in Ge-like SiGe'. Chinese Journal Of Physics, 49 :209-220 [Details] | |
| (2011) | 'Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures' Murphy-Armando, F;Fahy, S (2011) 'Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures'. Journal of Applied Physics, 109 [DOI] [Details] | |
| (2011) | 'First principles calculation of electron-phonon and alloy scattering in strained SiGe' Murphy-Armando, F;Fahy, S (2011) 'First principles calculation of electron-phonon and alloy scattering in strained SiGe'. Journal of Applied Physics, 110 [DOI] [Details] | |
| (2010) | 'Deformation potentials and electron-phonon coupling in silicon nanowires' Murphy-Armando F, Fagas G, Greer JC (2010) 'Deformation potentials and electron-phonon coupling in silicon nanowires'. Nanoletters, 10 (3):869-873 [DOI] [Details] | |
| (2008) | 'First-principles calculation of carrier-phonon scattering in n-type Si1-xGex alloys' Murphy-Armando, F;Fahy, S (2008) 'First-principles calculation of carrier-phonon scattering in n-type Si1-xGex alloys'. Physical Review B, 78 [DOI] [Details] | |
| (2007) | 'First-principles calculation of p-type alloy scattering in Si1-xGex' Joyce, S;Murphy-Armando, F;Fahy, S (2007) 'First-principles calculation of p-type alloy scattering in Si1-xGex'. Physical Review B, 75 [DOI] [Details] | |
| (2006) | 'First-Principles Calculation of Alloy Scattering in Ge_xSi_1-x' Murphy-Armando, F. and Fahy, S.; (2006) 'First-Principles Calculation of Alloy Scattering in Ge_xSi_1-x'. Physical Review Letters, 97 (9) [DOI] [Full Text] [Details] | |
| (2004) | 'Spin--orbit coupling and electron spin resonance for interacting electrons in carbon nanotubes' De Martino, A. and Egger, R. and Murphy-Armando, F. and Hallberg, K. (2004) 'Spin--orbit coupling and electron spin resonance for interacting electrons in carbon nanotubes'. Journal of Physics: Condensed Matter, 16 (17) [Details] |
Conference Publications
| Year | Publication | |
|---|---|---|
| (2016) | Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII Hudait, Mantu; Clavel, M.; Lester, L.; Saladukha, Dzianis; Ochalski, Tomasz.Murphy-Armando, Felipe. (2016) Heterogeneously grown tunable group-IV laser on silicon . In: Razeghi, Manijeh eds. Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII San Francisco, California, United States, , 13-FEB-16 [DOI] [Full Text] [Details] | |
| (2016) | Pushing the limits of silicon transistors Saladukha, D,Ochalski, TJ,Murphy-Armando, F,Clavel, MB,Hudait, MK,Witzigmann, B,Osinski, M,Arakawa, Y (2016) PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXIV Pushing the limits of silicon transistors [DOI] [Details] | |
| (2016) | 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) Murphy-Armando, F;Liu, C;Zhao, Y;Duffy, R (2016) Mind the drain from strain: effects of strain on the leakage current of Si diodes 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) , pp.802-804 [Details] | |
| (2014) | Proceedings of the International Conference on Ion Implantation Technology Shayesteh M.;O'Connell D.;Gity F.;Murphy-Armando F.;Yu R.;Huet K.;Toque-Tresonne I.;Cristiano F.;Boninelli S.;Henrichsen H.;Petersen D.;Nielsen P.;Duffy R. (2014) Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios Proceedings of the International Conference on Ion Implantation Technology [DOI] [Details] | |
| (2014) | 2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014) Shayesteh, M;Connell, DO;Gity, F;Murphy-Armando, F;Yu, R;Huet, K;Toque-Tresonne, I;Cristiano, F;Boninelli, S;Henrichsen, HH;Petersen, DH;Nielsen, PF;Duffy, R (2014) Laser thermal annealing of Ge, optimized for highly activated dopants and diode I-ON/I-OFF ratios 2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014) [Details] | |
| (2014) | Laser thermal annealing of Ge, optimized for highly activated dopants and diode I-ON/I-OFF ratios Shayesteh, M,Connell, DO,Gity, F,Murphy-Armando, F,Yu, R,Huet, K,Toque-Tresonne, I,Cristiano, F,Boninelli, S,Henrichsen, HH,Petersen, DH,Nielsen, PF,Duffy, R, (2014) 2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014) Laser thermal annealing of Ge, optimized for highly activated dopants and diode I-ON/I-OFF ratios [Details] | |
| (2012) | Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on Murphy-Armando, F. and Fahy, S. (2012) Very large piezoresistance in Si 1- x Ge x alloys Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on , pp.117-120 [Details] | |
| (2012) | 2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012 Murphy-Armando F.;Fahy S. (2012) Very large piezoresistance in Si 1-xGe x alloys 2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012 , pp.117-118 [DOI] [Details] | |
| (2011) | 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011 Vaughan M.;Murphy-Armando F.;Fahy S. (2011) Alloy scattering of substitutional carbon in silicon: A first principles approach 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011 , pp.99-102 [DOI] [Details] | |
| (2011) | 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011 Murphy-Armando F.;Fahy S. (2011) Giant mobility enhancement in highly strained, direct gap Ge 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011 , pp.199-201 [DOI] [Details] | |
| (2011) | Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on Vaughan, MP and Murphy-Armando, F. and Fahy, S. (2011) Alloy scattering of substitutional carbon in silicon: a first principles approach Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on , pp.1-4 [Details] | |
| (2011) | Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on Murphy-Armando, F. and Fahy, S. (2011) Giant mobility enhancement in highly strained, direct gap Ge Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on , pp.1-3 [Details] |
Professional Activities
Conference Contributions
| Year | Publication | |
|---|---|---|
| (2012) | Piezo-resistance in $ n $-type Si $ \_ $$1-x$\$ $ Ge $ \_x $ alloys as a function of alloy composition and strain, Murphy-Armando, F. and Fahy, S. (2012) APS. [Oral Presentation], Piezo-resistance in $ n $-type Si $ \_ $$1-x$\$ $ Ge $ \_x $ alloys as a function of alloy composition and strain, Boston , 27-FEB-12 - 02-MAR-12. [Details] | |
| (2008) | First principles calculation of carrier-phonon scattering in Si nanowires, Murphy-Armando, F. and McEniry, E.J. and Todorov, T.N. and Dundas, D. (2008) First principles calculation of carrier-phonon scattering in Si nanowires, . [Details] | |
| (2006) | Hole mobility in SiGe alloys from first principles, Joyce, S. and Murphy-Armando, F. and Fahy, S. (2006) Hole mobility in SiGe alloys from first principles, . [Details] | |
| (2006) | First-principles calculation of phonon scattering of n-type carriers in SiGe alloys, Murphy Armando, F. and Fahy, S. (2006) First-principles calculation of phonon scattering of n-type carriers in SiGe alloys, . [Details] | |
| (2005) | First-principles calculation of alloy scattering of n-type carriers in SiGe, Murphy-Armando, F. and Fahy, S. (2005) First-principles calculation of alloy scattering of n-type carriers in SiGe, . [Details] |
Committees
| Committee | Function | From / To | |
|---|---|---|---|
| Safety Committee | Representative for TMD centre | / |
Outreach Activities
| Description | |
|---|---|
Teaching Activities
Teaching Interests
2015 - Present, Condensed Matter Physics (PY3105)2014- Present, Nanoelectronics (UE6005)
Research Information
Internal Collaborators
| Name | Institute | Country | |
|---|---|---|---|
| Tomasz Ochalski | Tyndall National Insitute | IRELAND | |
| Ray Duffy | Tyndall National Insitute | IRELAND |