2000-2003 Post-graduate courses at Researchers Training Institute of National Academy of Sciences of Belarus
Relevant modulus include: Laser physics (specialization)*, Computer science*, Philosophy*, English*, Belarusian. * – candidate’s exam passed.
1995-2000 Belarusian State University, physics department
Distinction diploma. Specialty: physicist, specialization: physicist, teacher of physics and computer sciences.
Relevant modulus include: Higher mathematics (mathematical analysis, analytical geometry, differential equation, bases of vector and tensor analysis, probability theory and mathematical statistics), General physics (mechanics, molecular physics, electricity and magnetism, atomic and nuclear physics, optics), Mathematical physics, Thermodynamics and statistical physics, Electrodynamics, Theoretical mechanics, Quantum mechanics, Bases of relativity theory, Astronomy, Computer sciences (Bases of assembler, Pascal (Delphi), Gupta SQLWindows), Methods of teaching of physics, Methods of teaching of computer sciences, General courses (Philosophy, History, Pedagogy, Economics, English etc. )
08.2003-11.2011 Junior scientist at Stepanov Institute of Physics of NAS of Belarus
08-11.2000 Probationer-researcher at Stepanov Institute of Physics of NAS of Belarus
1998-2000 Term paper and diploma thesis practices (student member) at Stepanov Institute of Physics of NAS of Belarus
Biography
Education, qualification
06.2010 Candidate of physico-mathematical sciences (PhD) thesis: Optically pumped lasers based on GaN epitaxial layers and InGaN/GaN quantum well heterostructures on Si(111)‑substrates (Stepanov Institute of Physics, NAS of Belarus)2000-2003 Post-graduate courses at Researchers Training Institute of National Academy of Sciences of Belarus
Relevant modulus include: Laser physics (specialization)*, Computer science*, Philosophy*, English*, Belarusian. * – candidate’s exam passed.
1995-2000 Belarusian State University, physics department
Distinction diploma. Specialty: physicist, specialization: physicist, teacher of physics and computer sciences.
Relevant modulus include: Higher mathematics (mathematical analysis, analytical geometry, differential equation, bases of vector and tensor analysis, probability theory and mathematical statistics), General physics (mechanics, molecular physics, electricity and magnetism, atomic and nuclear physics, optics), Mathematical physics, Thermodynamics and statistical physics, Electrodynamics, Theoretical mechanics, Quantum mechanics, Bases of relativity theory, Astronomy, Computer sciences (Bases of assembler, Pascal (Delphi), Gupta SQLWindows), Methods of teaching of physics, Methods of teaching of computer sciences, General courses (Philosophy, History, Pedagogy, Economics, English etc. )
Work experience
11.2011-to date Researcher at Tyndall National Institute, UCC08.2003-11.2011 Junior scientist at Stepanov Institute of Physics of NAS of Belarus
08-11.2000 Probationer-researcher at Stepanov Institute of Physics of NAS of Belarus
1998-2000 Term paper and diploma thesis practices (student member) at Stepanov Institute of Physics of NAS of Belarus
Research Interests
I am specialised in MOCVD growth (10+ years of experience), optical (20+ years) and structural (10+ years) characterisation and device fabrication of III-Nitride materials (InAlGaN). My PhD study was on radiative recombination and optical gain mechanisms in GaN epitaxial layers and InGaN/GaN QWs grown on silicon for which lasing at optical excitation was demonstrated for the first time. My post PhD experience included InAlN-based near UV LEDs, 250 nm AlGaN-based DUV LEDs, GaN nanocolumn-based Shottky diodes, AlN templates by nanopatterning and regrowth. In recent years, my main focus is on a novel fabrication approach for arrays of GaN nanocolumn- and GaN µ-pyramid-based µ-LEDs to be used as pixels in µ-displays for mixed and virtual reality applications.Research Grants
| Project | Funding Body | Start Date | End Date | Award | |
|---|---|---|---|---|---|
| GaN¿InGaN core¿shell nanoumbrella-based µ-LEDs for microdisplay applications | Enterprise Irl | 17-JUL-21 | 16-JAN-23 | €268,310.00 | |
| Tyndall Internal Catalyst Award_ICA_2021_Zhi Le | Miscellaneous | 01-NOV-20 | 31-JAN-22 | €24,832.00 | |
| GaN–InGaN core–shell nanopillars with advanced band-bending engineering for | Enterprise Irl | 31-JAN-20 | 31-OCT-20 | €8,000.00 | |
| transparent AlN templates on foreign substrates by means of coalescence of nanoscale structures | Science Foundation of Ireland | 01-JAN-18 | 30-APR-19 | €131,197.00 |
Publications
Peer Reviewed Journals
| Year | Publication | |
|---|---|---|
| (2022) | 'Strain control in graphene on GaN nanowires: Towards pseudomagnetic field engineering' Kierdaszuk, J;Dabrowski, P;Rogala, M;Krukowski, P;Przewloka, A;Krajewska, A;Kaszub, W;Sobanska, M;Zytkiewicz, ZR;Zubialevich, VZ;Kowalczyk, PJ;Wysmolek, A;Binder, J;Drabinska, A (2022) 'Strain control in graphene on GaN nanowires: Towards pseudomagnetic field engineering'. Carbon, 186 :128-140 [DOI] [Details] | |
| (2021) | 'A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content' Spasevski, L;Kusch, G;Pampili, P;Zubialevich, VZ;Dinh, DV;Bruckbauer, J;Edwards, PR;Parbrook, PJ;Martin, RW (2021) 'A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content'. Journal of Physics D: Applied Physics, 54 [DOI] [Details] | |
| (2021) | 'Tailoring Wettability Properties of GaN Epitaxial Layers through Surface Porosity Induced during CVD Deposition' Mena, J;Carvajal, JJ;Zubialevich, V;Parbrook, PJ;Diaz, F;Aguilo, M (2021) 'Tailoring Wettability Properties of GaN Epitaxial Layers through Surface Porosity Induced during CVD Deposition'. Langmuir Journal, [DOI] [Details] | |
| (2020) | 'Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells' Finot, Sylvain; Grenier, Vincent; Zubialevich, Vitaly; Bougerol, Catherine; Pampili, Pietro; Eymery, Joël; Parbrook, Peter J.; Durand, Christophe; Jacopin, Gwénolé (2020) 'Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells'. Applied Physics Letters, [DOI] [Full Text] [Details] | |
| (2020) | 'Thermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by Metal Organic Vapor Phase Epitaxy' Zubialevich V.Z.;Pampili P.;Parbrook P.J. (2020) 'Thermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by Metal Organic Vapor Phase Epitaxy'. Crystal Growth & Design, [DOI] [Full Text] [Details] | |
| (2020) | 'Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD' Zubialevich, Vitaly Z.; McLaren, Mathew; Pampili, Pietro; Shen, John; Arredondo-Arechavala, Miryam; Parbrook, Peter J. (2020) 'Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD'. Journal of Applied Physics, 127 (2):25306-1-025306-7 [DOI] [Full Text] [Details] | |
| (2020) | 'Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges' Alam, SN;Zubialevich, VZ;Ghafary, B;Parbrook, PJ (2020) 'Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges'. Scientific Reports, 10 [DOI] [Full Text] [Details] | |
| (2020) | 'Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates using Ammonia and Plasma-Assisted Molecular Beam Epitaxy' Rzheutski, Mikalai V.; Lutsenko, Evgenii V.; Vainilovich, Aliaksei G.; Svitsiankou, Illia E.; Nahorny, Aliaksei V.; Yablonskii, Gennadii P.; Zubialevich, Vitaly Z.; Petrov, Stanislav I.; Alexeev, Alexey N.; Nechaev, Dmitrii V.; Jmerik, Valentin N. (2020) 'Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates using Ammonia and Plasma-Assisted Molecular Beam Epitaxy'. Physica Status Solidi (A), N/A [DOI] [Full Text] [Details] | |
| (2020) | 'Photoconductive Solution Processed ZnO Quasi-superlattice Films' Buckley, D., Inguva, S., McNulty, D., Zubialevich, V. Z., Parbrook, P. J., Gity, F., Hurley, P. & O'Dwyer, C. (2020) 'Photoconductive Solution Processed ZnO Quasi-superlattice Films'. ECS Transactions, 98 :151-158 [Details] | |
| (2019) | 'AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy' Alyamani, Ahmed; Lutsenko, Evgenii V.; Rzheutski, Mikalai V.; Zubialevich, Vitaly Z.; Vainilovich, Aliaksei G.; Svitsiankou, Illia E.; Shulenkova, Varvara A.; Yablonskii, Gennadii P.; Petrov, Stanislav I.; Alexeev, Alexey N. (2019) 'AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy'. Japanese Journal of Applied Physics, 58 (SC):1-5 [DOI] [Full Text] [Details] | |
| (2019) | 'InAlN-based LEDs emitting in the near-UV region' Pampili P.;Zubialevich V.;Maaskant P.;Akhter M.;Corbett B.;Parbrook P. (2019) 'InAlN-based LEDs emitting in the near-UV region'. Japanese Journal of Applied Physics, 58 (SC) [DOI] [Details] | |
| (2018) | 'Significant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN' Pampili, Pietro; Dinh, Duc V.; Zubialevich, Vitaly Z.; Parbrook, Peter J. (2018) 'Significant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN'. Journal of Physics D: Applied Physics, 51 (6) [DOI] [Full Text] [Details] | |
| (2018) | 'Fast Growth of Smooth AlN in a 3 x 2 Showerhead-Type Vertical Flow MOVPE Reactor' Zubialevich, Vitaly Z.; Pampili, Pietro; Parbrook, Peter J. (2018) 'Fast Growth of Smooth AlN in a 3 x 2 Showerhead-Type Vertical Flow MOVPE Reactor'. Physica Status Solidi (B), [DOI] [Full Text] [Details] | |
| (2018) | 'Effect of Surface and Defect Chemistry on the Photo-catalytic Properties of Intentionally Defect-rich ZnO Nanorod Arrays' Kegel, Jan; Zubialevich, Vitaly Z.; Schmidt, Michael; Povey, Ian M.; Pemble, Martyn E. (2018) 'Effect of Surface and Defect Chemistry on the Photo-catalytic Properties of Intentionally Defect-rich ZnO Nanorod Arrays'. Acs Applied Materials & Interfaces, [DOI] [Full Text] [Details] | |
| (2018) | 'InxAl1-xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter' Zubialevich, VZ; Rzheutski, MV; Li, HN; Sadler, TC; Alam, SN; Bhardwaj, V; Lutsenko, EV; Yablonskii, GP; Parbrook, PJ (2018) 'InxAl1-xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter'. Journal of Luminescence, 194 :797-802 [DOI] [Full Text] [Details] | |
| (2017) | 'Ag colloids and arrays for plasmonic non-radiative energy transfer from quantum dots to a quantum well' Murphy, Graham P.; Gough, John J.; Higgins, Luke J.; Karanikolas, Vasilios D.; Wilson, Keith M.; Garcia Coindreau, Jorge A.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Bradley, A. Louise (2017) 'Ag colloids and arrays for plasmonic non-radiative energy transfer from quantum dots to a quantum well'. Nanotechnology, 28 (11):1-11 [DOI] [Full Text] [Details] | |
| (2017) | 'Highly-Ordered Growth of Solution-Processable ZnO for Thin Film Transistors' Buckley, D., McNulty, D., Zubialevich, V. Z., Parbrook, P. J. & O'Dwyer, C. (2017) 'Highly-Ordered Growth of Solution-Processable ZnO for Thin Film Transistors'. ECS Transactions, 77 :99-107 [DOI] [Full Text] [Details] | |
| (2017) | 'Optical Reflectivity of Spin-Coated Multilayered ZnO and Al:ZnO Thin Films' Buckley, D., McCormack, R., McNulty, D., Zubialevich, V. Z., Parbrook, P. J. & O'Dwyer, C. (2017) 'Optical Reflectivity of Spin-Coated Multilayered ZnO and Al:ZnO Thin Films'. ECS Transactions, 77 :75-82 [DOI] [Full Text] [Details] | |
| (2017) | 'Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD' Mena, J.; Carvajal, J. J.; Martínez, O.; Jiménez, J.; Zubialevich, Vitaly, Z.; Parbrook, Peter, J.; Diaz, F.; Aguiló, M. (2017) 'Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD'. Nanotechnology, 28 (37) [Full Text] [Details] | |
| (2017) | 'Nanoscale fissure formation in AlxGa1-xN/GaN heterostructures and their influence on Ohmic contact formation' Smith, MD;Thomson, D;Zubialevich, VZ;Li, H;Naresh-Kumar, G;Trager-Cowan, C;Parbrook, PJ (2017) 'Nanoscale fissure formation in AlxGa1-xN/GaN heterostructures and their influence on Ohmic contact formation'. Physica Status Solidi A-Applications and Materials Science, 214 [DOI] [Details] | |
| (2017) | 'Solution processed ZnO homogeneous quasisuperlattice materials' Buckley, D., McNulty, D., Zubialevich, V. Z., Parbrook, P. J. & O'Dwyer, C. (2017) 'Solution processed ZnO homogeneous quasisuperlattice materials'. Journal of Vacuum Science & Technology A, 35 :061517-061517 [DOI] [Full Text] [Details] | |
| (2017) | 'GaN nanowire Schottky barrier diodes' Sabui, Gourab; Zubialevich, Vitaly Z.; White, Mary; Pampili, Pietro; Parbrook, Peter J.; McLaren, Mathew; Arredondo-Arechavala, Miryam; Shen, Z. John (2017) 'GaN nanowire Schottky barrier diodes'. IEEE Transactions On Electron Devices, 64 (5):2283-2290 [DOI] [Full Text] [Details] | |
| (2016) | 'Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach' Conroy, Michele,Zubialevich, Vitaly Z.,Li, Haoning,Petkov, Nikolay,O’Donoghue, Sally,Holmes, Justin D.,Parbrook, Peter J. (2016) 'Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach'. ACS Nano, 10 (2):1988-1994 [DOI] [Full Text] [Details] | |
| (2016) | 'Strongly nonparabolic variation of the band gap in InxAl1-xN with low indium content' Zubialevich, VZ,Dinh, DV,Alam, SN,Schulz, S,O'Reilly, EP,Parbrook, PJ (2016) 'Strongly nonparabolic variation of the band gap in InxAl1-xN with low indium content'. Semiconductor Science and Technology, 31 [DOI] [Full Text] [Details] | |
| (2016) | 'Composition dependence of photoluminescence properties of InxAl1-xN/AlGaN quantum wells' Zubialevich, VZ;Alam, SN;Li, HN;Parbrook, PJ (2016) 'Composition dependence of photoluminescence properties of InxAl1-xN/AlGaN quantum wells'. Journal of Physics D: Applied Physics, 49 [DOI] [Full Text] [Details] | |
| (2015) | 'Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs' Akhter, M,Pampili, P,Zubialevich, VZ,Eason, C,Quan, ZH,Maaskant, PP,Parbrook, PJ,Corbett, B (2015) 'Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs'. Electronics Letters, 51 :354-75 [DOI] [Details] | |
| (2015) | 'Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods' Conroy, M;Zubialevich, VZ;Li, HN;Petkov, N;Holmes, JD;Parbrook, PJ (2015) 'Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods'. Journal of Materials Chemistry C, 3 :431-437 [DOI] [Details] | |
| (2015) | 'Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods' Conroy, M.; Zubialevich, V. Z.; Li, H.; Petkov, N.; Holmes, J. D.; Parbrook, P. J. (2015) 'Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods'. Journal of Materials Chemistry C, 3 (2):431-437 [DOI] [Full Text] [Details] | |
| (2015) | 'Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs' Akhter, M. Pampili, P. ; Zubialevich, V.Z. ; Eason, C. ; Quan, Z.H. ; Maaskant, P.P. ; Parbrook, P.J. ; Corbett, B. (2015) 'Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs'. Electronic Letters, 51 (4):354-355 [DOI] [Details] | |
| (2015) | 'Single phase (112¯2) AlN grown on (101¯0) sapphire by metalorganic vapour phase epitaxy' Dinh, D. V.; Conroy, M.; Zubialevich, V. Z.; Petkov, N.; Holmes, J. D.; Parbrook, P. J. (2015) 'Single phase (112¯2) AlN grown on (101¯0) sapphire by metalorganic vapour phase epitaxy'. Journal of Crystal Growth, 414 :94-99 [DOI] [Details] | |
| (2015) | 'Fully Porous GaN p-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs' Carvajal, J. J., Mena, J., Bilousov, O. V., Martínez, O., Jiménez, J., Zubialevich, V., Parbrook, P., Geaney, H., O'Dwyer, C., Díaz, F. & Aguiló, M. (2015) 'Fully Porous GaN p-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs'. ECS Transactions, 66 (1):163-176 [DOI] [Full Text] [Details] | |
| (2014) | 'Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD' Smith, MD;Taylor, E;Sadler, TC;Zubialevich, VZ;Lorenz, K;Li, HN;O'Connell, J;Alves, E;Holmes, JD;Martin, RW;Parbrook, PJ (2014) 'Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD'. Journal of Materials Chemistry C, 2 :5787-5792 [DOI] [Details] | |
| (2014) | 'Comparative study of polar and semipolar (11(2)over-bar2) InGaN layers grown by metalorganic vapour phase epitaxy' Dinh, DV;Oehler, F;Zubialevich, VZ;Kappers, MJ;Alam, SN;Caliebe, M;Scholtz, F;Humphreys, CJ;Parbrook, PJ (2014) 'Comparative study of polar and semipolar (11(2)over-bar2) InGaN layers grown by metalorganic vapour phase epitaxy'. Journal of Applied Physics, 116 [DOI] [Details] | |
| (2014) | 'Fully porous GaN p-n junctions fabricated by chemical vapor deposition' Bilousov, O. V., Carvajal, J. J., Geaney, H., Zubialevich, V. Z., Parbrook, P. J., Martínez, O., Jiménez, J., Díaz, F., Aguiló, M. & O’Dwyer, C. (2014) 'Fully porous GaN p-n junctions fabricated by chemical vapor deposition'. Acs Applied Materials & Interfaces, 6 :17954-17964 [Full Text] [Details] | |
| (2014) | 'Enhanced UV luminescence from InAlN quantum well structures using two temperature growth' Zubialevich, VZ;Sadler, TC;Dinh, DV;Alam, SN;Li, HN;Pampili, P;Parbrook, PJ (2014) 'Enhanced UV luminescence from InAlN quantum well structures using two temperature growth'. Luminescence, 155 :108-111 [DOI] [Details] | |
| (2013) | 'Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping' Kachkanov V.;Dolbnya I.;O'Donnell K.;Lorenz K.;Pereira S.;Watson I.;Sadler T.;Li H.;Zubialevich V.;Parbrook P. (2013) 'Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping'. Physica Status Solidi C - Current Topics In Solid State Physics, 10 (3):481-485 [DOI] [Details] | |
| (2013) | 'The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures' Smith, MD;Sadler, TC;Li, HN;Zubialevich, VZ;Parbrook, PJ (2013) 'The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures'. Applied Physics Letters, 103 [DOI] [Details] | |
| (2013) | 'Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping' Kachkanov, Vyacheslav and Dolbnya, Igor and O'Donnell, Kevin and Lorenz, Katharina and Pereira, Sergio and Watson, Ian and Sadler, Thomas and Li, Haoning and Zubialevich, Vitaly and Parbrook, Peter (2013) 'Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping'. Physica Status Solidi (C) Current Topics in Solid State Physics, 10 (3):481-485 [Details] | |
| (2014) | 'Comparative study of polar and semipolar (11-22) InGaN layers grown by metalorganic vapour phase epitaxy' Dinh, Duc V and Oehler, F and Zubialevich, VZ and Kappers, MJ and Alam, SN and Caliebe, M and Scholtz, F and Humphreys, CJ and Parbrook, PJ (2014) 'Comparative study of polar and semipolar (11-22) InGaN layers grown by metalorganic vapour phase epitaxy'. Journal of Applied Physics, 116 (15) [Details] | |
| (2014) | 'Enhanced UV luminescence from InAlN quantum well structures using two temperature growth' Zubialevich, Vitaly Z and Sadler, Thomas C and Dinh, Duc V and Alam, Shahab N and Li, Haoning and Pampili, Pietro and Parbrook, Peter J (2014) 'Enhanced UV luminescence from InAlN quantum well structures using two temperature growth'. Journal of Luminescence, 155 :108-111 [Details] | |
| (2013) | 'Fabrication of p-type porous GaN on silicon and epitaxial GaN' Bilousov, OV,Geaney, H,Carvajal, JJ,Zubialevich, VZ,Parbrook, PJ,Giguere, A,Drouin, D,Diaz, F,Aguilo, M,O'Dwyer, C (2013) 'Fabrication of p-type porous GaN on silicon and epitaxial GaN'. Applied Physics Letters, 103 [DOI] [Details] |
Other Journals
| Year | Publication | |
|---|---|---|
| (2013) | 'Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al2O3 epilayers' Lutsenko, Evgenii V and Rzheutski, Mikalai V and Zubialevich, Vitalii Z and Pavlovskii, Viacheslav N and Yablonskii, Gennadii P and Shulenkov, Alexei S and Reklaitis, Ignas and Kadys, Ar\=unas and Malinauskas, Tadas and Nargelas, Saulius and others (2013) 'Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al2O3 epilayers' physica status solidi (c), 10 (3) :511-514. [Details] | |
| (2013) | 'Preparation of Substrates Intended for the Growth of Lower Threading Dislocation Densities within Nitride Based UV Multiple Quantum Wells' Conroy, Michele Ann and Petkov, Nikolay and Li, Haoning N and Sadler, Thomas C and Zubialevich, Vitaly and Holmes, Justin D and Parbrook, Peter J (2013) 'Preparation of Substrates Intended for the Growth of Lower Threading Dislocation Densities within Nitride Based UV Multiple Quantum Wells' ECS Transactions, 53 (2) :39-42. [Details] | |
| (2013) | 'Cathodoluminscence of barium and calcium thioand selenogallates co-doped with rare-earth elements' Pavlovskii, VN and Zubialevich, VZ and Lutsenko, EV and Yablonskii, GP and Pashaev, AM and Tagiev, BG and Abushov, SA and Tagiev, OB (2013) 'Cathodoluminscence of barium and calcium thioand selenogallates co-doped with rare-earth elements' Journal of Applied Spectroscopy, 80 :215-219. [Details] | |
| (2011) | 'SET-UP FOR THE MEASUREMENT OF SPATIAL DISTRIBUTION OF THE LASER DIODES RADIATION AND THE LUMINOUS INTENSITY OF LEDS AND LED-LIGHTING' NIKANENKA, SV and LUTSENKO, EV and ZUBIALEVICH, VZ and RZHEUTSKII, MV and ZHDANOVSKII, VA and DANILCHYK, AV and YABLONSKII, GP and DLUGUNOVICH, VA (2011) 'SET-UP FOR THE MEASUREMENT OF SPATIAL DISTRIBUTION OF THE LASER DIODES RADIATION AND THE LUMINOUS INTENSITY OF LEDS AND LED-LIGHTING' Doklady BGIUR (in Russian), :101-106. [Details] | |
| (2011) | 'Effect of excitation level on the photoluminescence of barium thiogallate activated with europium and cerium ions' Zubialevich, VZ and Lutsenko, EV and Danilchyk, AV and Muravitskaya, EV and Yablonskii, GP and Pashaev, AM and Tagiev, BG and Tagiev, OB and Abushov, SA (2011) 'Effect of excitation level on the photoluminescence of barium thiogallate activated with europium and cerium ions' Journal of Applied Spectroscopy, 78 (2) :234-239. [Details] | |
| (2011) | 'Irregular spectral position of E|| c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2' Mauder, C and Lutsenko, EV and Rzheutski, MV and Reuters, B and Zubialevich, VZ and Pavlovskii, VN and Yablonskii, GP and Heuken, M and Kalisch, H and Vescan, A (2011) 'Irregular spectral position of E|| c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2' Applied Physics Letters, 99 (23) . [Details] | |
| (2011) | 'Luminescence Properties of Barium Thio-and Selenogallates Doped with Eu, Ce, and Eu+ Ce' Yablonskii, Gennadii P and Zubialevich, Vitaly Z and Lutsenko, Eugenii V and Pashaev, Arif M and Tagiev, Bahadir G and Tagiev, Oktay B and Abushov, Said A (2011) 'Luminescence Properties of Barium Thio-and Selenogallates Doped with Eu, Ce, and Eu+ Ce' Japanese Journal of Applied Physics, 50 (5) . [Details] | |
| (2009) | 'OPTICAL GAIN SPECTRA AND LASER ACTION OF InGaN/GaN MQWs GROWN ON SILICON AT PUMPING BY FEMTOSECOND PULSES' DANILCHYK, AV and LUTSENKO, EV and ZUBIALEVICH, VZ and PAVLOVSKII, VN and YABLONSKII, GP and SCHINELLER, B and HEUKEN, M and DIKME, Y and KHOSHROO, L and KALISCH, H (2009) 'OPTICAL GAIN SPECTRA AND LASER ACTION OF InGaN/GaN MQWs GROWN ON SILICON AT PUMPING BY FEMTOSECOND PULSES' Physics, Chemistry and Application of Nanostructures: Proceedings of the International Conference, Nanomeeting--2009: Reviews and Short Notes: Minsk, Belarus, 26-29 May 2009, . [Details] | |
| (2008) | 'Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates' Zubialevich, VZ and Lutsenko, EV and Pavlovskii, VN and Gurskii, AL and Danilchyk, AV and Yablonskii, GP and Danailov, MB and Ressel, B and Demidovich, AA and Woitok, JF and others (2008) 'Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates' Journal of Applied Spectroscopy, 75 (1) :96-103. [Details] | |
| (2007) | 'RADIATIVE RECOMBINATION AND GAIN IN InGaN/GaN QUANTUM WELLS WITH In-RICH NANOCLUSTERS' Zubialevich, VZ and Danilchyk, AV and Lutsenko, EV and Pavlovskii, VN and Gurskii, AL and Yablonskii, GP and Schineller, B and Dikme, Y and L\"unenb\"urger, M and Heuken, M and others (2007) 'RADIATIVE RECOMBINATION AND GAIN IN InGaN/GaN QUANTUM WELLS WITH In-RICH NANOCLUSTERS' Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proceedings of the International Conference, Nanomeeting-2007, Minsk, Belarus, 22-25 May 2007, . [Details] | |
| (2006) | 'Internal laser parameters and optical properties of laser with CdSe quantum dots in ZnSe matrix' Lutsenko, EV and Gurskii, AL and Pavlovskii, VN and Zubialevich, VZ and Yablonskii, GP and Sedova, IV and Sorokin, SV and Toropov, AA and Ivanov, SV and Kop'ev, PS (2006) 'Internal laser parameters and optical properties of laser with CdSe quantum dots in ZnSe matrix' physica status solidi (c), 3 (4) :1233-1237. [Details] | |
| (2006) | 'High-efficiency low-threshold optically-pumped green laser with single CdSe quantum-disk-sheet active region' Ivanov, SV and Sedova, IV and Sorokin, SV and Sitnikova, AA and Toropov, AA and Kop'ev, PS and Lutsenko, EV and Danilchyk, AV and Voinilovich, AG and Zubialevich, VZ and others (2006) 'High-efficiency low-threshold optically-pumped green laser with single CdSe quantum-disk-sheet active region' physica status solidi (c), 3 (4) :1229-1232. [Details] | |
| (2006) | 'Optical properties of Cd (Zn) Se/ZnMgSSe heterostructures with fractional QD-like CdSe insertions at high excitation levels' Lutsenko, EV and Gurskii, AL and Pavlovskii, VN and Zubialevich, VZ and Yablonskii, GP and Sedova, IV and Sorokin, SV and Toropov, AA and Ivanov, SV and Kop'ev, PS (2006) 'Optical properties of Cd (Zn) Se/ZnMgSSe heterostructures with fractional QD-like CdSe insertions at high excitation levels' physica status solidi (c), 3 (4) :895-899. [Details] | |
| (2006) | 'Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE' Lutsenko, EV and Pavlovskii, VN and Danilchyk, AV and Osipov, KA and Rzheutskii, NV and Zubialevich, VZ and Gurskii, AL and Yablonskii, GP and Malinauskas, T and Jara\vsi\=unas, K and others (2006) 'Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE' physica status solidi (a), 203 (7) :1759-1763. [Details] | |
| (2005) | 'Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time-resolved four-wave mixing technique' Gurskii, AL and Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Yablonskii, GP and Aleksiej\=unas, R and Jara\vsi\=unas, K and Letertre, F and Faure, B and Schineller, B and others (2005) 'Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time-resolved four-wave mixing technique' physica status solidi (c), 2 (7) :2724-2727. [Details] | |
| (2004) | 'Integration of Cd (Zn) Se/ZnSe and GaN-based lasers for optoelectronic applications in a green spectral range' Sedova, IV and Sorokin, SV and Toropov, AA and Kaygorodov, VA and Ivanov, SV and Kop'ev, PS and Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Gurskii, AL and others (2004) 'Integration of Cd (Zn) Se/ZnSe and GaN-based lasers for optoelectronic applications in a green spectral range' physica status solidi (c), 1 (4) :1030-1033. [Details] | |
| (2004) | 'Luminescence and lasing in InGaN/GaN multiple quantum well heterostructures grown at different temperatures' Yablonskii, GP and Pavlovskii, VN and Lutsenko, EV and Zubialevich, VZ and Gurskii, AL and Kalisch, H and Szymakowski, A and Jansen, RH and Alam, A and Schineller, B and others (2004) 'Luminescence and lasing in InGaN/GaN multiple quantum well heterostructures grown at different temperatures' Applied Physics Letters, 85 (22) :5158-5160. [Details] | |
| (2003) | 'Luminescence properties of strained GaN epilayers and spatial configurations of silicon impurity and related defects' Gurskii, AL and Lutsenko, EV and Zelenkovskii, VM and Bezjazychnaja, TV and Pavlovskii, VN and Zubialevich, VZ and Schineller, B and Schoen, O and Yablonskii, GP and Heuken, M (2003) 'Luminescence properties of strained GaN epilayers and spatial configurations of silicon impurity and related defects' physica status solidi (c), (1) :425-429. [Details] | |
| (2003) | 'Growth, Stimulated Emission, Photo-and Electroluminescence of InGaN/GaN EL-Test Heterostructures' Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Stognij, AI and Gurskii, AL and Hryshanau, VA and Shulenkov, AS and Yablonskii, GP and Schoen, O and Protzmann, H and others (2003) 'Growth, Stimulated Emission, Photo-and Electroluminescence of InGaN/GaN EL-Test Heterostructures' physica status solidi (c), (1) :272-275. [Details] | |
| (2003) | 'Influence of pumping and inherent laser light on properties and degradation of ZnMgSSe/ZnSe quantum well heterostructures' Lutsenko, EV and Yablonskii, GP and Pavlovskii, VN and Zubialevich, VZ and Gurskii, AL and Kalisch, H and Heime, K and Jansen, RH and Walther, T and Schineller, B and others (2003) 'Influence of pumping and inherent laser light on properties and degradation of ZnMgSSe/ZnSe quantum well heterostructures' physica status solidi (a), 195 (1) :188-193. [Details] | |
| (2002) | 'Luminescence and stimulated emission from GaN on silicon substrates heterostructures' Yablonskii, GP and Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Gurskii, AL and Kalisch, H and Szymakowskii, A and Jansen, RA and Alam, A and Dikme, Y and others (2002) 'Luminescence and stimulated emission from GaN on silicon substrates heterostructures' physica status solidi (a), 192 (1) :54-59. [Details] | |
| (2001) | 'Time-and Temperature-Resolved Photoluminescence of GaN: Mg Epitaxial Layers Grown by MOVPE' Gurskii, AL and Marko, IP and Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Yablonskii, GP and Schineller, B and Sch\"on, O and Heuken, M (2001) 'Time-and Temperature-Resolved Photoluminescence of GaN: Mg Epitaxial Layers Grown by MOVPE' physica status solidi (b), 228 (2) :361-364. [Details] | |
| (2001) | 'Multiple quantum well InGaN/GaN blue optically pumped lasers operating in the spectral range of 450--470 nm' Yablonskii, GP and Lutsenko, EV and Pavlovskii, VN and Marko, IP and Gurskii, AL and Zubialevich, VZ and Schoen, O and Protzmann, H and Luenenbuerger, M and Schineller, B and others (2001) 'Multiple quantum well InGaN/GaN blue optically pumped lasers operating in the spectral range of 450--470 nm' physica status solidi (a), 188 (1) :79-82. [Details] | |
| (2001) | 'Spectral-angular and threshold characteristics of ultraviolet-blue In (Al) GaN/GaN/Al\~ 2O\~ 3 heterostructure lasers [4748-60]' Yablonskii, GP and Lutsenko, EV and Zubialevich, VZ and Pavlovskii, VN and Marko, IP and Gurskii, AL and Alam, A and Protzmann, H and Luenenbuerger, M and Schineller, B (2001) 'Spectral-angular and threshold characteristics of ultraviolet-blue In (Al) GaN/GaN/Al\~ 2O\~ 3 heterostructure lasers [4748-60]' PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, :449-454. [Details] | |
| (2001) | 'ENERGY TRANSFER AND LASINQ IN InGaN/GaN MULTIPLE QUANTUM WELL HETEROSTRUCTURES' YABLONSKII, GP and MUDRYI, AV and LUTSENKO, EV and PAVLOVSKII, VN and MARKO, IP and ZUBIALEVICH, VZ and SCHTNELLER, B and PROTZMANN, H and LUENENBUERGER, M and HEUKEN, M (2001) 'ENERGY TRANSFER AND LASINQ IN InGaN/GaN MULTIPLE QUANTUM WELL HETEROSTRUCTURES' Physics, Chemistry and Application of Nanostructures: Review and Short Notes to Nanomeeting-2001: Minsk, Belarus 22-25 May 2001, . [Details] | |
| (2001) | 'Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450--470 nm' Yablonskii, GP and Lutsenko, EV and Pavlovskii, VN and Marko, IP and Gurskii, AL and Zubialevich, VZ and Mudryi, AV and Sch\"on, O and Protzmann, H and L\"unenb\"urger, M and others (2001) 'Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450--470 nm' Applied Physics Letters, 79 (13) :1953-1955. [Details] |
Conference Publications
| Year | Publication | |
|---|---|---|
| (2018) | 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) Zubialevich, Vitaly Z.; Pampili, Pietro; McLaren, M.; Arredondo-Arechavala, M.; Sabui, G.; Shen, Z. J.; Parbrook, Peter J. (2018) Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) Cork, Ireland, , 23-JUL-18 - 26-JUL-18 , pp.1-3 [DOI] [Full Text] [Details] | |
| (2017) | Proceedings of the International Symposium on Power Semiconductor Devices and ICs Sabui G.;Zubialevich V.;White M.;Pampili P.;Parbrook P.;McLaren M.;Arredondo-Arechavala M.;Shen Z. (2017) Design considerations of vertical GaN nanowire Schottky barrier diodes Proceedings of the International Symposium on Power Semiconductor Devices and ICs , pp.191-194 [DOI] [Details] | |
| (2017) | GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7 Sabui, G;Zubialevich, VZ;Pampili, P;White, M;Parbrook, PJ;McLaren, M;Arredondo-Arechavala, M;Shen, ZJ (2017) Simulation Study of High Voltage Vertical GaN Nanowire Field Effect Transistors GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7 , pp.69-85 [DOI] [Details] | |
| (2015) | 2015 IEEE Summer Topicals Meeting Series, SUM 2015 Parbrook P.;Pampili P.;Akhter M.;Eason C.;Zubialevich V.;Maaskant P.;Quan Z.;O'Brien P.;Corbett B. (2015) MHz operation of 250 nm ultra-violet micro-light emitting diodes 2015 IEEE Summer Topicals Meeting Series, SUM 2015 , pp.173-174 [DOI] [Details] | |
| (2015) | 2015 IEEE Summer Topicals Meeting Series, SUM 2015 Pampili P.;Akhter M.;Eason C.;Zubialevich V.;Maaskant P.;Quan Z.;O'Brien P.;Corbett B.;Parbrook P. (2015) 250-nm emitting LED optimized for optical fibre coupling 2015 IEEE Summer Topicals Meeting Series, SUM 2015 , pp.177-178 [DOI] [Details] | |
| (2015) | ECS Transactions Carvajal J.;Mena J.;Bilousov O.;Martínez O.;Jiménez J.;Zubialevich V.;Parbrook P.;Geaney H.;O'Dwyer C.;Díaz F.;Aguiló M. (2015) Fully porous GaN p-n junctions fabricated by chemical vapor deposition: A green technology towards more efficient LEDs ECS Transactions , pp.163-176 [DOI] [Details] | |
| (2010) | Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on Lutsenko, EV and Pavlovskii, VN and Danilchyk, AV and Rzheutski, MV and Vainilovich, AG and Zubialevich, VZ and Muravitskaya, AV and Yablonskii, GP (2010) Determination of active region overheating temperature of GaN-based light emitting diodes promising for laser media pumping Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on , pp.219-221 [Details] | |
| (2010) | The 6th International Conference on Rare Earth Development and Application ZUBIALEVICH, Vitaly Z and LUTSENKO, Evgenii V and MURAVITSKAYA, Alena V and YABLONSKII, Gennadii P and PASHAYEV, Arif M and TAGIEV, Bahadur G and TAGIEV, Oktay B and ABUSHOV, Seid A (2010) High thermal and excitation intensity stability of luminescence from BaGa\_2S\_4 co doped with ions of europium and cerium The 6th International Conference on Rare Earth Development and Application [Details] | |
| (2010) | Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on Pavlovskii, VN and Lutsenko, EV and Danilchyk, AV and Zubialevich, VZ and Muravitskaya, AV and Yablonskii, GP and Kalisch, H and Jansen, RH and Schineller, B and Heuken, M (2010) Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on , pp.265-267 [Details] | |
| (2009) | 7th Belarusian-Russian Workshop SEMICONDUCTOR LASERS AND SYSTEMS; Minsk, Belarus; 1-5 June 2009 Pavlovskii, VN and Rzheutski, MV and Lutsenko, EV and Vainilovich, AG and Danilchyk, AV and Zubialevich, VZ and Yablonskii, GP and Behmenburg, H and Mauder, C and Kalisch, H and others (2009) Photoluminescence of III--nitride heterostructures grown with nonpolar orientation on lithium aluminium oxide substrates 7th Belarusian-Russian Workshop SEMICONDUCTOR LASERS AND SYSTEMS; Minsk, Belarus; 1-5 June 2009 , pp.267-270 [Details] | |
| (2005) | Nanomeeting-2005; Minsk, Belarus; May 24-27, 2005 GURSKII, AL and LUTSENKO, EV and PAVLOVSKII, VN and ZUBIALEVICH, VZ and DANIL'CHIK, AV and OSIPOV, KA and YABLONSKII, GP and SHULENKOV, AS and HRYSHANAU, VA and STOGNIJ, AI and others (2005) ELECTRICAL AND OPTICAL PROPERTIES OF AlGaN/GaN HEMT STRUCTURES WITH 2-DIMENSIONAL ELECTRON GAS GROWN BY MOCVD ON SAPPHIRE AND Si (111) SUBSTRATES Nanomeeting-2005; Minsk, Belarus; May 24-27, 2005 , pp.539-543 [Details] | |
| (2003) | Compound Semiconductors, 2003. International Symposium on Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Gurskii, AL and Ryabtsev, AG and Ryabtsev, GI and Yablonskii, GP and Dikme, Y and Szymakowski, A and Kalisch, H and others (2003) High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates Compound Semiconductors, 2003. International Symposium on , pp.141-142 [Details] | |
| (2003) | International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems Yablonskii, Gennadii P and Lutsenko, Evgenii V and Pavlovskii, Vyacheslav N and Zubialevich, Vitaly Z and Gurskii, Alexander L and Kalisch, Holger and Jansen, Rolf H and Heime, Klaus and Schineller, Bernd and Heuken, Michael (2003) ZnMgSSe/ZnSe separate confinement heterostructure multiple quantum well lasers International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems , pp.220-226 [Details] | |
| (2003) | Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on Gurskii, AL and Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Ryabtsev, AG and Ryabtsev, GI and Yablonskii, GP and Dikme, Y and Szymakovski, A and Kalisch, H and others (2003) High temperature operation of optically pumped InGaN/GaN MQW heterostructure lasers grown on Si substrates Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on , pp.197-203 [Details] | |
| (2003) | International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems Schineller, Bernd and Protzmann, Harry and Luenenbuerger, Markus and Gerstenbrandt, Georg and Heuken, Michael and Lutsenko, Evgenii V and Zubialevich, Vitaly Z and Pavlovskii, Vyacheslav N and Gurskii, Alexander L and Yablonskii, Gennadii P (2003) InGaN/GaN violet-blue multiple quantum well heterostructure lasers for temperature range of 80-450 K International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems , pp.213-219 [Details] | |
| (2003) | Nanomeeting-2003; Minsk, Belarus; 20-23 May 2003 YABLONSKII, GP and LUTSENKO, EV and GURSKII, AL and PAVLOVSKI, VN and ZUBIALEVICH, VZ and KALISCH, H and SZYMAKOWSKI, A and DIKME, Y and JANSEN, RH and WOITOK, JF and others (2003) InGaN/GaN QUANTUM WELL HETEROSTRUCTURES GROWN ON SILICON FOR UV-BLUE LASERS AND LIGHT EMITTING DIODES Nanomeeting-2003; Minsk, Belarus; 20-23 May 2003 , pp.541-544 [Details] | |
| (2002) | XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001) Yablonskii, Gennadii P and Lutsenko, Evgenii V and Zubialevich, Vitalii Z and Pavlovskii, Vyacheslav N and Marko, Igor P and Gurskii, Alexander L and Alam, Assadullah and Protzmann, Harry and Luenenbuerger, Markus and Schineller, Bernd and others (2002) Spectral-angular and threshold characteristics of ultraviolet-blue In (Al) GaN/GaN/Al2O3 heterostructure lasers XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001) , pp.449-454 [Details] | |
| (2002) | XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001) Lutsenko, Evgenii V and Zubialevich, Vitalii Z and Pavlovskii, Vyacheslav N and Marko, Igor P and Gurskii, Alexander L and Yablonskii, Gennadii P and Kalisch, Holger and Walther, Thomas and Schoen, Oliver and Protzmann, Harry and others (2002) Optically pumped transverse lasers based on ZnMgSSe/ZnSe and InGaN/GaN heterostructures XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001) , pp.542-548 [Details] |
Book Chapters
| Year | Publication | |
|---|---|---|
| (2004) | 'Stimulated Emission and Gain in GaN Epilayers Grown on Si' Gurskii, AL and Lutsenko, EV and Zubialevich, VZ and Pavlovskii, VN and Yablonskii, GP and Kazlauskas, K and Tamulaitis, G and Jursenas, S and Zukauskas, A and Dikme, Y and others (2004) 'Stimulated Emission and Gain in GaN Epilayers Grown on Si' In: Michael S. Shur, Artūras Žukauskas (eds). UV Solid-State Light Emitters and Detectors. Netherlands: Springer Netherlands. [DOI] [Details] | |
| (2004) | 'Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures' Yablonskii, GP and Gurskii, AL and Lutsenko, EV and Zubialevich, VZ and Pavlovskii, VN and Anufryk, AS and Dikme, Y and Kalisch, H and Jansen, RH and Schineller, B and others (2004) 'Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures' In: Michael S. Shur, Artūras Žukauskas (eds). UV Solid-State Light Emitters and Detectors. Netherlands: Springer Netherlands. [DOI] [Details] |
Professional Activities
Honours and Awards
| Year | Title | Awarding Body | |
|---|---|---|---|
| 2022 | SPRINT One to Watch Award | GatewayUCC |
Research Information
Internal Collaborators
| Name | Institute | Country | |
|---|---|---|---|
| Pietro Pampili | Tyndall National Institute | IRELAND | |
| Peter Parbrook |
Contact details
- Vitaly Zubialevich
Researcher PhD - vitaly.zubialevich@tyndall.ie
- Lee Maltings
Dyke Parade - 021-2346695
- 021-4904177
- 085-7436690