Research Profile

Vitaly Zubialevich

Biography

Education, qualification

06.2010           Candidate of physico-mathematical sciences (PhD) thesis: Optically pumped lasers based on GaN epitaxial layers and InGaN/GaN quantum well heterostructures on Si(111)‑substrates (Institute of physics, NAS of Belarus)

2000-2003       Post-graduate courses at Researchers Training Institute of National Academy of Sciences of Belarus
Relevant modulus include: Laser physics (specialization)*, Computer science*, Philosophy*, English*, Belarusian. * – candidate’s exam passed.

1995-2000       Belarusian State University, physics department      
Distinction diploma. Specialty: physicist, specialization: physicist, teacher of physics and computer sciences.        
Relevant modulus include: Higher mathematics (mathematical analysis, analytical geometry, differential equation, bases of vector and tensor analysis, probability theory and mathematical statistics), General physics (mechanics, molecular physics, electricity and magnetism, atomic and nuclear physics, optics), Mathematical physics, Thermodynamics and statistical physics, Electrodynamics, Theoretical mechanics, Quantum mechanics, Bases of relativity theory, Astronomy, Computer sciences (Bases of assembler, Pascal (Delphi), Gupta SQLWindows), Methods of teaching of physics, Methods of teaching of computer sciences, General courses (Philosophy, History, Pedagogy, Economics, English etc. )

Work experience

2011-present    Researcher at Tyndall National Institute, UCC

2003-2011   Junior scientist at Institute of physics of NAS of Belarus

08-11.2000      Probationer-researcher at Institute of physics of NAS of Belarus

1998-2000       Term paper and diploma thesis practices (student member) at Institute of physics of NAS of Belarus

Publications

Book Chapters

 YearPublication
(2004)'Stimulated Emission and Gain in GaN Epilayers Grown on Si'
Gurskii, AL and Lutsenko, EV and Zubialevich, VZ and Pavlovskii, VN and Yablonskii, GP and Kazlauskas, K and Tamulaitis, G and Jursenas, S and Zukauskas, A and Dikme, Y and others (2004) 'Stimulated Emission and Gain in GaN Epilayers Grown on Si' In: Michael S. Shur, Artūras Žukauskas (eds). UV Solid-State Light Emitters and Detectors. Netherlands: Springer Netherlands.   [DOI] [Details]
(2004)'Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures'
Yablonskii, GP and Gurskii, AL and Lutsenko, EV and Zubialevich, VZ and Pavlovskii, VN and Anufryk, AS and Dikme, Y and Kalisch, H and Jansen, RH and Schineller, B and others (2004) 'Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures' In: Michael S. Shur, Artūras Žukauskas (eds). UV Solid-State Light Emitters and Detectors. Netherlands: Springer Netherlands.   [DOI] [Details]

Peer Reviewed Journals

 YearPublication
(2014)'Fully porous GaN p-n junctions fabricated by chemical vapor deposition'
Bilousov, O. V., Carvajal, J. J., Geaney, H., Zubialevich, V. Z., Parbrook, P. J., Martínez, O., Jiménez, J., Díaz, F., Aguiló, M. & O’Dwyer, C. (2014) 'Fully porous GaN p-n junctions fabricated by chemical vapor deposition'. Acs Applied Materials & Interfaces, 6 :17954-17964   [Details]
(2014)'Single phase (11-22) AlN grown on (10-10) sapphire by metalorganic vapour phase epitaxy'
Dinh, Duc V and Conroy, M and Zubialevich, VZ and Petkov, N and Holmes, JD and Parbrook, PJ (2014) 'Single phase (11-22) AlN grown on (10-10) sapphire by metalorganic vapour phase epitaxy'. Journal of Crystal Growth, [Details]
(2013)'Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping'
Kachkanov, Vyacheslav and Dolbnya, Igor and O'Donnell, Kevin and Lorenz, Katharina and Pereira, Sergio and Watson, Ian and Sadler, Thomas and Li, Haoning and Zubialevich, Vitaly and Parbrook, Peter (2013) 'Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping'. Physica Status Solidi (C) Current Topics in Solid State Physics, 10 (3):481-485 [Details]
(2014)'Comparative study of polar and semipolar (11-22) InGaN layers grown by metalorganic vapour phase epitaxy'
Dinh, Duc V and Oehler, F and Zubialevich, VZ and Kappers, MJ and Alam, SN and Caliebe, M and Scholtz, F and Humphreys, CJ and Parbrook, PJ (2014) 'Comparative study of polar and semipolar (11-22) InGaN layers grown by metalorganic vapour phase epitaxy'. Journal of Applied Physics, 116 (15) [Details]
(2014)'Enhanced UV luminescence from InAlN quantum well structures using two temperature growth'
Zubialevich, Vitaly Z and Sadler, Thomas C and Dinh, Duc V and Alam, Shahab N and Li, Haoning and Pampili, Pietro and Parbrook, Peter J (2014) 'Enhanced UV luminescence from InAlN quantum well structures using two temperature growth'. Journal of Luminescence, 155 :108-111 [Details]
(2013)'Fabrication of p-type porous GaN on silicon and epitaxial GaN'
Bilousov, OV,Geaney, H,Carvajal, JJ,Zubialevich, VZ,Parbrook, PJ,Giguere, A,Drouin, D,Diaz, F,Aguilo, M,O'Dwyer, C (2013) 'Fabrication of p-type porous GaN on silicon and epitaxial GaN'. Applied Physics Letters, 103 [DOI] [Details]

Other Journals

 YearPublication
(2001)'Spectral-angular and threshold characteristics of ultraviolet-blue In (Al) GaN/GaN/Al\~ 2O\~ 3 heterostructure lasers [4748-60]'
Yablonskii, GP and Lutsenko, EV and Zubialevich, VZ and Pavlovskii, VN and Marko, IP and Gurskii, AL and Alam, A and Protzmann, H and Luenenbuerger, M and Schineller, B (2001) 'Spectral-angular and threshold characteristics of ultraviolet-blue In (Al) GaN/GaN/Al\~ 2O\~ 3 heterostructure lasers [4748-60]' PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, :449-454. [Details]
(2008)'Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates'
Zubialevich, VZ and Lutsenko, EV and Pavlovskii, VN and Gurskii, AL and Danilchyk, AV and Yablonskii, GP and Danailov, MB and Ressel, B and Demidovich, AA and Woitok, JF and others (2008) 'Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates' Journal of Applied Spectroscopy, 75 (1) :96-103. [Details]
(2001)'Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part A. 1)-Laser diodes-Multiple Quantum Well InGaN/GaN Blue'
Yablonskii, GP and Lutsenko, EV and Pavlovskii, VN and Marko, IP and Gurskii, AL and Zubialevich, VZ and Schon, O and Protzmann, H and Lunenburger, M and Schineller, B and others (2001) 'Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part A. 1)-Laser diodes-Multiple Quantum Well InGaN/GaN Blue' Physica Status Solidi-A-Applied Research, 188 (1) :79-82. [Details]
(2011)'Irregular spectral position of E|| c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2'
Mauder, C and Lutsenko, EV and Rzheutski, MV and Reuters, B and Zubialevich, VZ and Pavlovskii, VN and Yablonskii, GP and Heuken, M and Kalisch, H and Vescan, A (2011) 'Irregular spectral position of E|| c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2' Applied Physics Letters, 99 (23) . [Details]
(2011)'SET-UP FOR THE MEASUREMENT OF SPATIAL DISTRIBUTION OF THE LASER DIODES RADIATION AND THE LUMINOUS INTENSITY OF LEDS AND LED-LIGHTING'
NIKANENKA, SV and LUTSENKO, EV and ZUBIALEVICH, VZ and RZHEUTSKII, MV and ZHDANOVSKII, VA and DANILCHYK, AV and YABLONSKII, GP and DLUGUNOVICH, VA (2011) 'SET-UP FOR THE MEASUREMENT OF SPATIAL DISTRIBUTION OF THE LASER DIODES RADIATION AND THE LUMINOUS INTENSITY OF LEDS AND LED-LIGHTING' Doklady BGIUR (in Russian), :101-106. [Details]
(2013)'Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al2O3 epilayers'
Lutsenko, Evgenii V and Rzheutski, Mikalai V and Zubialevich, Vitalii Z and Pavlovskii, Viacheslav N and Yablonskii, Gennadii P and Shulenkov, Alexei S and Reklaitis, Ignas and Kadys, Ar\=unas and Malinauskas, Tadas and Nargelas, Saulius and others (2013) 'Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al2O3 epilayers' physica status solidi (c), 10 (3) :511-514. [Details]
(2013)'Cathodoluminscence of barium and calcium thioand selenogallates co-doped with rare-earth elements'
Pavlovskii, VN and Zubialevich, VZ and Lutsenko, EV and Yablonskii, GP and Pashaev, AM and Tagiev, BG and Abushov, SA and Tagiev, OB (2013) 'Cathodoluminscence of barium and calcium thioand selenogallates co-doped with rare-earth elements' Journal of Applied Spectroscopy, 80 :215-219. [Details]
(2004)'Integration of Cd (Zn) Se/ZnSe and GaN-based lasers for optoelectronic applications in a green spectral range'
Sedova, IV and Sorokin, SV and Toropov, AA and Kaygorodov, VA and Ivanov, SV and Kop'ev, PS and Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Gurskii, AL and others (2004) 'Integration of Cd (Zn) Se/ZnSe and GaN-based lasers for optoelectronic applications in a green spectral range' physica status solidi (c), 1 (4) :1030-1033. [Details]
(2006)'High-efficiency low-threshold optically-pumped green laser with single CdSe quantum-disk-sheet active region'
Ivanov, SV and Sedova, IV and Sorokin, SV and Sitnikova, AA and Toropov, AA and Kop'ev, PS and Lutsenko, EV and Danilchyk, AV and Voinilovich, AG and Zubialevich, VZ and others (2006) 'High-efficiency low-threshold optically-pumped green laser with single CdSe quantum-disk-sheet active region' physica status solidi (c), 3 (4) :1229-1232. [Details]
(2003)'Growth, Stimulated Emission, Photo-and Electroluminescence of InGaN/GaN EL-Test Heterostructures'
Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Stognij, AI and Gurskii, AL and Hryshanau, VA and Shulenkov, AS and Yablonskii, GP and Schoen, O and Protzmann, H and others (2003) 'Growth, Stimulated Emission, Photo-and Electroluminescence of InGaN/GaN EL-Test Heterostructures' physica status solidi (c), (1) :272-275. [Details]
(2006)'Internal laser parameters and optical properties of laser with CdSe quantum dots in ZnSe matrix'
Lutsenko, EV and Gurskii, AL and Pavlovskii, VN and Zubialevich, VZ and Yablonskii, GP and Sedova, IV and Sorokin, SV and Toropov, AA and Ivanov, SV and Kop'ev, PS (2006) 'Internal laser parameters and optical properties of laser with CdSe quantum dots in ZnSe matrix' physica status solidi (c), 3 (4) :1233-1237. [Details]
(2001)'Time-and Temperature-Resolved Photoluminescence of GaN: Mg Epitaxial Layers Grown by MOVPE'
Gurskii, AL and Marko, IP and Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Yablonskii, GP and Schineller, B and Sch\"on, O and Heuken, M (2001) 'Time-and Temperature-Resolved Photoluminescence of GaN: Mg Epitaxial Layers Grown by MOVPE' physica status solidi (b), 228 (2) :361-364. [Details]
(2003)'Influence of pumping and inherent laser light on properties and degradation of ZnMgSSe/ZnSe quantum well heterostructures'
Lutsenko, EV and Yablonskii, GP and Pavlovskii, VN and Zubialevich, VZ and Gurskii, AL and Kalisch, H and Heime, K and Jansen, RH and Walther, T and Schineller, B and others (2003) 'Influence of pumping and inherent laser light on properties and degradation of ZnMgSSe/ZnSe quantum well heterostructures' physica status solidi (a), 195 (1) :188-193. [Details]
(2003)'Luminescence properties of strained GaN epilayers and spatial configurations of silicon impurity and related defects'
Gurskii, AL and Lutsenko, EV and Zelenkovskii, VM and Bezjazychnaja, TV and Pavlovskii, VN and Zubialevich, VZ and Schineller, B and Schoen, O and Yablonskii, GP and Heuken, M (2003) 'Luminescence properties of strained GaN epilayers and spatial configurations of silicon impurity and related defects' physica status solidi (c), (1) :425-429. [Details]
(2011)'Effect of excitation level on the photoluminescence of barium thiogallate activated with europium and cerium ions'
Zubialevich, VZ and Lutsenko, EV and Danilchyk, AV and Muravitskaya, EV and Yablonskii, GP and Pashaev, AM and Tagiev, BG and Tagiev, OB and Abushov, SA (2011) 'Effect of excitation level on the photoluminescence of barium thiogallate activated with europium and cerium ions' Journal of Applied Spectroscopy, 78 (2) :234-239. [Details]
(2006)'Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE'
Lutsenko, EV and Pavlovskii, VN and Danilchyk, AV and Osipov, KA and Rzheutskii, NV and Zubialevich, VZ and Gurskii, AL and Yablonskii, GP and Malinauskas, T and Jara\vsi\=unas, K and others (2006) 'Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE' physica status solidi (a), 203 (7) :1759-1763. [Details]
(2011)'Luminescence Properties of Barium Thio-and Selenogallates Doped with Eu, Ce, and Eu+ Ce'
Yablonskii, Gennadii P and Zubialevich, Vitaly Z and Lutsenko, Eugenii V and Pashaev, Arif M and Tagiev, Bahadir G and Tagiev, Oktay B and Abushov, Said A (2011) 'Luminescence Properties of Barium Thio-and Selenogallates Doped with Eu, Ce, and Eu+ Ce' Japanese Journal of Applied Physics, 50 (5) . [Details]
(2006)'Optical properties of Cd (Zn) Se/ZnMgSSe heterostructures with fractional QD-like CdSe insertions at high excitation levels'
Lutsenko, EV and Gurskii, AL and Pavlovskii, VN and Zubialevich, VZ and Yablonskii, GP and Sedova, IV and Sorokin, SV and Toropov, AA and Ivanov, SV and Kop'ev, PS (2006) 'Optical properties of Cd (Zn) Se/ZnMgSSe heterostructures with fractional QD-like CdSe insertions at high excitation levels' physica status solidi (c), 3 (4) :895-899. [Details]
(2007)'RADIATIVE RECOMBINATION AND GAIN IN InGaN/GaN QUANTUM WELLS WITH In-RICH NANOCLUSTERS'
Zubialevich, VZ and Danilchyk, AV and Lutsenko, EV and Pavlovskii, VN and Gurskii, AL and Yablonskii, GP and Schineller, B and Dikme, Y and L\"unenb\"urger, M and Heuken, M and others (2007) 'RADIATIVE RECOMBINATION AND GAIN IN InGaN/GaN QUANTUM WELLS WITH In-RICH NANOCLUSTERS' Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proceedings of the International Conference, Nanomeeting-2007, Minsk, Belarus, 22-25 May 2007, . [Details]
(2004)'LASERS, OPTICS, AND OPTOELECTRONICS'
Lombardet, B and Ferrini, R and Dunbar, LA and Houdr\'e (2004) 'LASERS, OPTICS, AND OPTOELECTRONICS' Appl. Phys. Lett, 85 (22) . [Details]
(2001)'Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Doping of GaN with magnesium-Time-and'
Gurskii, AI and Marko, IP and Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Yablonskii, GP and Schineller, B and Schon, O and Heuken, M (2001) 'Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Doping of GaN with magnesium-Time-and' Physica Status Solidi-B-Basic Research, 228 (2) :361-364. [Details]
(2001)'Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450--470 nm'
Yablonskii, GP and Lutsenko, EV and Pavlovskii, VN and Marko, IP and Gurskii, AL and Zubialevich, VZ and Mudryi, AV and Sch\"on, O and Protzmann, H and L\"unenb\"urger, M and others (2001) 'Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450--470 nm' Applied Physics Letters, 79 (13) :1953-1955. [Details]
(2002)'Luminescence and stimulated emission from GaN on silicon substrates heterostructures'
Yablonskii, GP and Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Gurskii, AL and Kalisch, H and Szymakowskii, A and Jansen, RA and Alam, A and Dikme, Y and others (2002) 'Luminescence and stimulated emission from GaN on silicon substrates heterostructures' physica status solidi (a), 192 (1) :54-59. [Details]
(2005)'Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time-resolved four-wave mixing technique'
Gurskii, AL and Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Yablonskii, GP and Aleksiej\=unas, R and Jara\vsi\=unas, K and Letertre, F and Faure, B and Schineller, B and others (2005) 'Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time-resolved four-wave mixing technique' physica status solidi (c), 2 (7) :2724-2727. [Details]
(2001)'Multiple quantum well InGaN/GaN blue optically pumped lasers operating in the spectral range of 450--470 nm'
Yablonskii, GP and Lutsenko, EV and Pavlovskii, VN and Marko, IP and Gurskii, AL and Zubialevich, VZ and Schoen, O and Protzmann, H and Luenenbuerger, M and Schineller, B and others (2001) 'Multiple quantum well InGaN/GaN blue optically pumped lasers operating in the spectral range of 450--470 nm' physica status solidi (a), 188 (1) :79-82. [Details]
(2004)'Luminescence and lasing in InGaN/GaN multiple quantum well heterostructures grown at different temperatures'
Yablonskii, GP and Pavlovskii, VN and Lutsenko, EV and Zubialevich, VZ and Gurskii, AL and Kalisch, H and Szymakowski, A and Jansen, RH and Alam, A and Schineller, B and others (2004) 'Luminescence and lasing in InGaN/GaN multiple quantum well heterostructures grown at different temperatures' Applied Physics Letters, 85 (22) :5158-5160. [Details]
(2002)'Papers presented at the 4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED2002). Cordoba, Spain, March 11-15, 2002-Part 1-Optoelectronic properties-Luminescence and'
Yablonskii, GP and Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Gurskii, AL and Kalisch, H and Szymakowskii, A and Jansen, RA and Alam, A and Dikme, Y and others (2002) 'Papers presented at the 4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED2002). Cordoba, Spain, March 11-15, 2002-Part 1-Optoelectronic properties-Luminescence and' Physica Status Solidi-A-Applied Research, 192 (1) :54-59. [Details]
(2001)'ENERGY TRANSFER AND LASINQ IN InGaN/GaN MULTIPLE QUANTUM WELL HETEROSTRUCTURES'
YABLONSKII, GP and MUDRYI, AV and LUTSENKO, EV and PAVLOVSKII, VN and MARKO, IP and ZUBIALEVICH, VZ and SCHTNELLER, B and PROTZMANN, H and LUENENBUERGER, M and HEUKEN, M (2001) 'ENERGY TRANSFER AND LASINQ IN InGaN/GaN MULTIPLE QUANTUM WELL HETEROSTRUCTURES' Physics, Chemistry and Application of Nanostructures: Review and Short Notes to Nanomeeting-2001: Minsk, Belarus 22-25 May 2001, . [Details]
(2009)'OPTICAL GAIN SPECTRA AND LASER ACTION OF InGaN/GaN MQWs GROWN ON SILICON AT PUMPING BY FEMTOSECOND PULSES'
DANILCHYK, AV and LUTSENKO, EV and ZUBIALEVICH, VZ and PAVLOVSKII, VN and YABLONSKII, GP and SCHINELLER, B and HEUKEN, M and DIKME, Y and KHOSHROO, L and KALISCH, H (2009) 'OPTICAL GAIN SPECTRA AND LASER ACTION OF InGaN/GaN MQWs GROWN ON SILICON AT PUMPING BY FEMTOSECOND PULSES' Physics, Chemistry and Application of Nanostructures: Proceedings of the International Conference, Nanomeeting--2009: Reviews and Short Notes: Minsk, Belarus, 26-29 May 2009, . [Details]

Conference Publications

 YearPublication
(2002)XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001)
Lutsenko, Evgenii V and Zubialevich, Vitalii Z and Pavlovskii, Vyacheslav N and Marko, Igor P and Gurskii, Alexander L and Yablonskii, Gennadii P and Kalisch, Holger and Walther, Thomas and Schoen, Oliver and Protzmann, Harry and others (2002) Optically pumped transverse lasers based on ZnMgSSe/ZnSe and InGaN/GaN heterostructures XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001) , pp.542-548 [Details]
(2002)XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001)
Yablonskii, Gennadii P and Lutsenko, Evgenii V and Zubialevich, Vitalii Z and Pavlovskii, Vyacheslav N and Marko, Igor P and Gurskii, Alexander L and Alam, Assadullah and Protzmann, Harry and Luenenbuerger, Markus and Schineller, Bernd and others (2002) Spectral-angular and threshold characteristics of ultraviolet-blue In (Al) GaN/GaN/Al2O3 heterostructure lasers XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001) , pp.449-454 [Details]
(2013)223rd ECS Meeting (May 12-17, 2013)
Conroy, Michele A. and Petkov, Nikolay and Li, Haoning and Sadler, Thomas C. and Zubialevich, Vitaly Z. and Holmes, Justin D. and Parbrook, Peter J. (2013) Preparation of Substrates Intended for the Growth of Lower Threading Dislocation Densities within Nitride Based UV Multiple Quantum Wells 223rd ECS Meeting (May 12-17, 2013) [Details]
(2003)International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems
Schineller, Bernd and Protzmann, Harry and Luenenbuerger, Markus and Gerstenbrandt, Georg and Heuken, Michael and Lutsenko, Evgenii V and Zubialevich, Vitaly Z and Pavlovskii, Vyacheslav N and Gurskii, Alexander L and Yablonskii, Gennadii P (2003) InGaN/GaN violet-blue multiple quantum well heterostructure lasers for temperature range of 80-450 K International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems , pp.213-219 [Details]
(2003)Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
Gurskii, AL and Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Ryabtsev, AG and Ryabtsev, GI and Yablonskii, GP and Dikme, Y and Szymakovski, A and Kalisch, H and others (2003) High temperature operation of optically pumped InGaN/GaN MQW heterostructure lasers grown on Si substrates Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on , pp.197-203 [Details]
(2010)Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on
Pavlovskii, VN and Lutsenko, EV and Danilchyk, AV and Zubialevich, VZ and Muravitskaya, AV and Yablonskii, GP and Kalisch, H and Jansen, RH and Schineller, B and Heuken, M (2010) Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on , pp.265-267 [Details]
(2013)ECS Transactions
Conroy, M. A.; Petkov, N.; Li, H. N.; Sadler, T. C.; Zubialevich, V.; Holmes, J. D.; Parbrook, P. J. (2013) Preparation of substrates intended for the growth of lower threading dislocation densities within nitride based UV multiple quantum wells . In: Vol. 53(2) eds. ECS Transactions Toronto, ON, Canada, , 12-MAY-13 - 16-MAY-13 , pp.39-42   [DOI] [Details]
(2010)The 6th International Conference on Rare Earth Development and Application
ZUBIALEVICH, Vitaly Z and LUTSENKO, Evgenii V and MURAVITSKAYA, Alena V and YABLONSKII, Gennadii P and PASHAYEV, Arif M and TAGIEV, Bahadur G and TAGIEV, Oktay B and ABUSHOV, Seid A (2010) High thermal and excitation intensity stability of luminescence from BaGa\_2S\_4 co doped with ions of europium and cerium The 6th International Conference on Rare Earth Development and Application [Details]
(2010)Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on
Lutsenko, EV and Pavlovskii, VN and Danilchyk, AV and Rzheutski, MV and Vainilovich, AG and Zubialevich, VZ and Muravitskaya, AV and Yablonskii, GP (2010) Determination of active region overheating temperature of GaN-based light emitting diodes promising for laser media pumping Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on , pp.219-221 [Details]
(2009)7th Belarusian-Russian Workshop SEMICONDUCTOR LASERS AND SYSTEMS; Minsk, Belarus; 1-5 June 2009
Pavlovskii, VN and Rzheutski, MV and Lutsenko, EV and Vainilovich, AG and Danilchyk, AV and Zubialevich, VZ and Yablonskii, GP and Behmenburg, H and Mauder, C and Kalisch, H and others (2009) Photoluminescence of III--nitride heterostructures grown with nonpolar orientation on lithium aluminium oxide substrates 7th Belarusian-Russian Workshop SEMICONDUCTOR LASERS AND SYSTEMS; Minsk, Belarus; 1-5 June 2009 , pp.267-270 [Details]
(2003)Nanomeeting-2003; Minsk, Belarus; 20-23 May 2003
YABLONSKII, GP and LUTSENKO, EV and GURSKII, AL and PAVLOVSKI, VN and ZUBIALEVICH, VZ and KALISCH, H and SZYMAKOWSKI, A and DIKME, Y and JANSEN, RH and WOITOK, JF and others (2003) InGaN/GaN QUANTUM WELL HETEROSTRUCTURES GROWN ON SILICON FOR UV-BLUE LASERS AND LIGHT EMITTING DIODES Nanomeeting-2003; Minsk, Belarus; 20-23 May 2003 , pp.541-544 [Details]
(2005)Nanomeeting-2005; Minsk, Belarus; May 24-27, 2005
GURSKII, AL and LUTSENKO, EV and PAVLOVSKII, VN and ZUBIALEVICH, VZ and DANIL'CHIK, AV and OSIPOV, KA and YABLONSKII, GP and SHULENKOV, AS and HRYSHANAU, VA and STOGNIJ, AI and others (2005) ELECTRICAL AND OPTICAL PROPERTIES OF AlGaN/GaN HEMT STRUCTURES WITH 2-DIMENSIONAL ELECTRON GAS GROWN BY MOCVD ON SAPPHIRE AND Si (111) SUBSTRATES Nanomeeting-2005; Minsk, Belarus; May 24-27, 2005 , pp.539-543 [Details]
(2003)Compound Semiconductors, 2003. International Symposium on
Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Gurskii, AL and Ryabtsev, AG and Ryabtsev, GI and Yablonskii, GP and Dikme, Y and Szymakowski, A and Kalisch, H and others (2003) High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates Compound Semiconductors, 2003. International Symposium on , pp.141-142 [Details]
(2003)International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems
Yablonskii, Gennadii P and Lutsenko, Evgenii V and Pavlovskii, Vyacheslav N and Zubialevich, Vitaly Z and Gurskii, Alexander L and Kalisch, Holger and Jansen, Rolf H and Heime, Klaus and Schineller, Bernd and Heuken, Michael (2003) ZnMgSSe/ZnSe separate confinement heterostructure multiple quantum well lasers International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems , pp.220-226 [Details]

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Peter Parbrook

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