Research Profile

Vitaly Zubialevich

Biography

Education, qualification

06.2010           Candidate of physico-mathematical sciences (PhD) thesis: Optically pumped lasers based on GaN epitaxial layers and InGaN/GaN quantum well heterostructures on Si(111)‑substrates (Stepanov Institute of Physics, NAS of Belarus)
2000-2003       Post-graduate courses at Researchers Training Institute of National Academy of Sciences of Belarus
Relevant modulus include: Laser physics (specialization)*, Computer science*, Philosophy*, English*, Belarusian. * – candidate’s exam passed.
1995-2000       Belarusian State University, physics department      
Distinction diploma. Specialty: physicist, specialization: physicist, teacher of physics and computer sciences.        
Relevant modulus include: Higher mathematics (mathematical analysis, analytical geometry, differential equation, bases of vector and tensor analysis, probability theory and mathematical statistics), General physics (mechanics, molecular physics, electricity and magnetism, atomic and nuclear physics, optics), Mathematical physics, Thermodynamics and statistical physics, Electrodynamics, Theoretical mechanics, Quantum mechanics, Bases of relativity theory, Astronomy, Computer sciences (Bases of assembler, Pascal (Delphi), Gupta SQLWindows), Methods of teaching of physics, Methods of teaching of computer sciences, General courses (Philosophy, History, Pedagogy, Economics, English etc. )

Work experience

11.2011-to date   Researcher at Tyndall National Institute, UCC
08.2003-11.2011   Junior scientist at Stepanov Institute of Physics of NAS of Belarus
08-11.2000            Probationer-researcher at Stepanov Institute of Physics of NAS of Belarus
1998-2000            Term paper and diploma thesis practices (student member) at Stepanov Institute of Physics of NAS of Belarus

Research Interests

I am specialised in MOCVD growth (10+ years of experience), optical (20+ years) and structural (10+ years) characterisation and device fabrication of III-Nitride materials (InAlGaN). My PhD study was on radiative recombination and optical gain mechanisms in GaN epitaxial layers and InGaN/GaN QWs grown on silicon for which lasing at optical excitation was demonstrated for the first time. My post PhD experience included InAlN-based near UV LEDs, 250 nm AlGaN-based DUV LEDs, GaN nanocolumn-based Shottky diodes, AlN templates by nanopatterning and regrowth. In recent years, my main focus is on a novel fabrication approach for arrays of GaN nanocolumn- and GaN µ-pyramid-based µ-LEDs to be used as pixels in µ-displays for mixed and virtual reality applications.

Research Grants

 ProjectFunding
Body
Start DateEnd DateAward
GaN¿InGaN core¿shell nanoumbrella-based µ-LEDs for microdisplay applicationsEnterprise Irl17-JUL-2130-APR-24€268,308.00
Tyndall Internal Catalyst Award_ICA_2021_Zhi LeMiscellaneous01-NOV-2031-DEC-22€24,832.00
GaN–InGaN core–shell nanopillars with advanced band-bending engineering forEnterprise Irl31-JAN-2031-OCT-20€8,000.00
transparent AlN templates on foreign substrates by means of coalescence of nanoscale structuresScience Foundation of Ireland01-JAN-1830-APR-19€131,197.00

Publications

Peer Reviewed Journals

 YearPublication
(2022)'Strain control in graphene on GaN nanowires: Towards pseudomagnetic field engineering'
Kierdaszuk, J;Dabrowski, P;Rogala, M;Krukowski, P;Przewloka, A;Krajewska, A;Kaszub, W;Sobanska, M;Zytkiewicz, ZR;Zubialevich, VZ;Kowalczyk, PJ;Wysmolek, A;Binder, J;Drabinska, A (2022) 'Strain control in graphene on GaN nanowires: Towards pseudomagnetic field engineering'. Carbon, 186 :128-140 [DOI] [Details]
(2021)'A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content'
Spasevski, L;Kusch, G;Pampili, P;Zubialevich, VZ;Dinh, DV;Bruckbauer, J;Edwards, PR;Parbrook, PJ;Martin, RW (2021) 'A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content'. Journal of Physics D: Applied Physics, 54 [DOI] [Details]
(2021)'Tailoring Wettability Properties of GaN Epitaxial Layers through Surface Porosity Induced during CVD Deposition'
Mena, J;Carvajal, JJ;Zubialevich, V;Parbrook, PJ;Diaz, F;Aguilo, M (2021) 'Tailoring Wettability Properties of GaN Epitaxial Layers through Surface Porosity Induced during CVD Deposition'. Langmuir Journal, [DOI] [Details]
(2020)'Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells'
Finot, Sylvain; Grenier, Vincent; Zubialevich, Vitaly; Bougerol, Catherine; Pampili, Pietro; Eymery, Joël; Parbrook, Peter J.; Durand, Christophe; Jacopin, Gwénolé (2020) 'Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells'. Applied Physics Letters, [DOI] [Full Text] [Details]
(2020)'Thermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by Metal Organic Vapor Phase Epitaxy'
Zubialevich V.Z.;Pampili P.;Parbrook P.J. (2020) 'Thermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by Metal Organic Vapor Phase Epitaxy'. Crystal Growth & Design, [DOI] [Full Text] [Details]
(2020)'Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD'
Zubialevich, Vitaly Z.; McLaren, Mathew; Pampili, Pietro; Shen, John; Arredondo-Arechavala, Miryam; Parbrook, Peter J. (2020) 'Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD'. Journal of Applied Physics, 127 (2):25306-1-025306-7   [DOI] [Full Text] [Details]
(2020)'Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges'
Alam, SN;Zubialevich, VZ;Ghafary, B;Parbrook, PJ (2020) 'Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges'. Scientific Reports, 10 [DOI] [Full Text] [Details]
(2020)'Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates using Ammonia and Plasma-Assisted Molecular Beam Epitaxy'
Rzheutski, Mikalai V.; Lutsenko, Evgenii V.; Vainilovich, Aliaksei G.; Svitsiankou, Illia E.; Nahorny, Aliaksei V.; Yablonskii, Gennadii P.; Zubialevich, Vitaly Z.; Petrov, Stanislav I.; Alexeev, Alexey N.; Nechaev, Dmitrii V.; Jmerik, Valentin N. (2020) 'Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates using Ammonia and Plasma-Assisted Molecular Beam Epitaxy'. Physica Status Solidi (A), N/A   [DOI] [Full Text] [Details]
(2020)'Photoconductive Solution Processed ZnO Quasi-superlattice Films'
Buckley, D., Inguva, S., McNulty, D., Zubialevich, V. Z., Parbrook, P. J., Gity, F., Hurley, P. & O'Dwyer, C. (2020) 'Photoconductive Solution Processed ZnO Quasi-superlattice Films'. ECS Transactions, 98 :151-158 [Details]
(2019)'AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy'
Alyamani, Ahmed; Lutsenko, Evgenii V.; Rzheutski, Mikalai V.; Zubialevich, Vitaly Z.; Vainilovich, Aliaksei G.; Svitsiankou, Illia E.; Shulenkova, Varvara A.; Yablonskii, Gennadii P.; Petrov, Stanislav I.; Alexeev, Alexey N. (2019) 'AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy'. Japanese Journal of Applied Physics, 58 (SC):1-5   [DOI] [Full Text] [Details]
(2019)'InAlN-based LEDs emitting in the near-UV region'
Pampili P.;Zubialevich V.;Maaskant P.;Akhter M.;Corbett B.;Parbrook P. (2019) 'InAlN-based LEDs emitting in the near-UV region'. Japanese Journal of Applied Physics, 58 (SC) [DOI] [Details]
(2018)'Significant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN'
Pampili, Pietro; Dinh, Duc V.; Zubialevich, Vitaly Z.; Parbrook, Peter J. (2018) 'Significant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN'. Journal of Physics D: Applied Physics, 51 (6)   [DOI] [Full Text] [Details]
(2018)'Fast Growth of Smooth AlN in a 3 x 2 Showerhead-Type Vertical Flow MOVPE Reactor'
Zubialevich, Vitaly Z.; Pampili, Pietro; Parbrook, Peter J. (2018) 'Fast Growth of Smooth AlN in a 3 x 2 Showerhead-Type Vertical Flow MOVPE Reactor'. Physica Status Solidi (B),   [DOI] [Full Text] [Details]
(2018)'Effect of Surface and Defect Chemistry on the Photo-catalytic Properties of Intentionally Defect-rich ZnO Nanorod Arrays'
Kegel, Jan; Zubialevich, Vitaly Z.; Schmidt, Michael; Povey, Ian M.; Pemble, Martyn E. (2018) 'Effect of Surface and Defect Chemistry on the Photo-catalytic Properties of Intentionally Defect-rich ZnO Nanorod Arrays'. Acs Applied Materials & Interfaces,   [DOI] [Full Text] [Details]
(2018)'InxAl1-xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter'
Zubialevich, VZ; Rzheutski, MV; Li, HN; Sadler, TC; Alam, SN; Bhardwaj, V; Lutsenko, EV; Yablonskii, GP; Parbrook, PJ (2018) 'InxAl1-xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter'. Journal of Luminescence, 194 :797-802 [DOI] [Full Text] [Details]
(2017)'Ag colloids and arrays for plasmonic non-radiative energy transfer from quantum dots to a quantum well'
Murphy, Graham P.; Gough, John J.; Higgins, Luke J.; Karanikolas, Vasilios D.; Wilson, Keith M.; Garcia Coindreau, Jorge A.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Bradley, A. Louise (2017) 'Ag colloids and arrays for plasmonic non-radiative energy transfer from quantum dots to a quantum well'. Nanotechnology, 28 (11):1-11 [DOI] [Full Text] [Details]
(2017)'Highly-Ordered Growth of Solution-Processable ZnO for Thin Film Transistors'
Buckley, D., McNulty, D., Zubialevich, V. Z., Parbrook, P. J. & O'Dwyer, C. (2017) 'Highly-Ordered Growth of Solution-Processable ZnO for Thin Film Transistors'. ECS Transactions, 77 :99-107   [DOI] [Full Text] [Details]
(2017)'Optical Reflectivity of Spin-Coated Multilayered ZnO and Al:ZnO Thin Films'
Buckley, D., McCormack, R., McNulty, D., Zubialevich, V. Z., Parbrook, P. J. & O'Dwyer, C. (2017) 'Optical Reflectivity of Spin-Coated Multilayered ZnO and Al:ZnO Thin Films'. ECS Transactions, 77 :75-82   [DOI] [Full Text] [Details]
(2017)'Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD'
Mena, J.; Carvajal, J. J.; Martínez, O.; Jiménez, J.; Zubialevich, Vitaly, Z.; Parbrook, Peter, J.; Diaz, F.; Aguiló, M. (2017) 'Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD'. Nanotechnology, 28 (37)   [Full Text] [Details]
(2017)'Nanoscale fissure formation in AlxGa1-xN/GaN heterostructures and their influence on Ohmic contact formation'
Smith, MD;Thomson, D;Zubialevich, VZ;Li, H;Naresh-Kumar, G;Trager-Cowan, C;Parbrook, PJ (2017) 'Nanoscale fissure formation in AlxGa1-xN/GaN heterostructures and their influence on Ohmic contact formation'. Physica Status Solidi A-Applications and Materials Science, 214 [DOI] [Details]
(2017)'Solution processed ZnO homogeneous quasisuperlattice materials'
Buckley, D., McNulty, D., Zubialevich, V. Z., Parbrook, P. J. & O'Dwyer, C. (2017) 'Solution processed ZnO homogeneous quasisuperlattice materials'. Journal of Vacuum Science & Technology A, 35 :061517-061517   [DOI] [Full Text] [Details]
(2017)'GaN nanowire Schottky barrier diodes'
Sabui, Gourab; Zubialevich, Vitaly Z.; White, Mary; Pampili, Pietro; Parbrook, Peter J.; McLaren, Mathew; Arredondo-Arechavala, Miryam; Shen, Z. John (2017) 'GaN nanowire Schottky barrier diodes'. IEEE Transactions On Electron Devices, 64 (5):2283-2290 [DOI] [Full Text] [Details]
(2016)'Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach'
Conroy, Michele,Zubialevich, Vitaly Z.,Li, Haoning,Petkov, Nikolay,O’Donoghue, Sally,Holmes, Justin D.,Parbrook, Peter J. (2016) 'Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach'. ACS Nano, 10 (2):1988-1994   [DOI] [Full Text] [Details]
(2016)'Strongly nonparabolic variation of the band gap in InxAl1-xN with low indium content'
Zubialevich, VZ,Dinh, DV,Alam, SN,Schulz, S,O'Reilly, EP,Parbrook, PJ (2016) 'Strongly nonparabolic variation of the band gap in InxAl1-xN with low indium content'. Semiconductor Science and Technology, 31 [DOI] [Full Text] [Details]
(2016)'Composition dependence of photoluminescence properties of InxAl1-xN/AlGaN quantum wells'
Zubialevich, VZ;Alam, SN;Li, HN;Parbrook, PJ (2016) 'Composition dependence of photoluminescence properties of InxAl1-xN/AlGaN quantum wells'. Journal of Physics D: Applied Physics, 49 [DOI] [Full Text] [Details]
(2015)'Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs'
Akhter, M,Pampili, P,Zubialevich, VZ,Eason, C,Quan, ZH,Maaskant, PP,Parbrook, PJ,Corbett, B (2015) 'Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs'. Electronics Letters, 51 :354-75 [DOI] [Details]
(2015)'Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods'
Conroy, M;Zubialevich, VZ;Li, HN;Petkov, N;Holmes, JD;Parbrook, PJ (2015) 'Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods'. Journal of Materials Chemistry C, 3 :431-437 [DOI] [Details]
(2015)'Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods'
Conroy, M.; Zubialevich, V. Z.; Li, H.; Petkov, N.; Holmes, J. D.; Parbrook, P. J. (2015) 'Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods'. Journal of Materials Chemistry C, 3 (2):431-437   [DOI] [Full Text] [Details]
(2015)'Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs'
Akhter, M. Pampili, P. ; Zubialevich, V.Z. ; Eason, C. ; Quan, Z.H. ; Maaskant, P.P. ; Parbrook, P.J. ; Corbett, B. (2015) 'Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs'. Electronic Letters, 51 (4):354-355 [DOI] [Details]
(2015)'Single phase (112¯2) AlN grown on (101¯0) sapphire by metalorganic vapour phase epitaxy'
Dinh, D. V.; Conroy, M.; Zubialevich, V. Z.; Petkov, N.; Holmes, J. D.; Parbrook, P. J. (2015) 'Single phase (112¯2) AlN grown on (101¯0) sapphire by metalorganic vapour phase epitaxy'. Journal of Crystal Growth, 414 :94-99   [DOI] [Details]
(2015)'Fully Porous GaN p-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs'
Carvajal, J. J., Mena, J., Bilousov, O. V., Martínez, O., Jiménez, J., Zubialevich, V., Parbrook, P., Geaney, H., O'Dwyer, C., Díaz, F. & Aguiló, M. (2015) 'Fully Porous GaN p-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs'. ECS Transactions, 66 (1):163-176   [DOI] [Full Text] [Details]
(2014)'Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD'
Smith, MD;Taylor, E;Sadler, TC;Zubialevich, VZ;Lorenz, K;Li, HN;O'Connell, J;Alves, E;Holmes, JD;Martin, RW;Parbrook, PJ (2014) 'Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD'. Journal of Materials Chemistry C, 2 :5787-5792 [DOI] [Details]
(2014)'Comparative study of polar and semipolar (11(2)over-bar2) InGaN layers grown by metalorganic vapour phase epitaxy'
Dinh, DV;Oehler, F;Zubialevich, VZ;Kappers, MJ;Alam, SN;Caliebe, M;Scholtz, F;Humphreys, CJ;Parbrook, PJ (2014) 'Comparative study of polar and semipolar (11(2)over-bar2) InGaN layers grown by metalorganic vapour phase epitaxy'. Journal of Applied Physics, 116 [DOI] [Details]
(2014)'Fully porous GaN p-n junctions fabricated by chemical vapor deposition'
Bilousov, O. V., Carvajal, J. J., Geaney, H., Zubialevich, V. Z., Parbrook, P. J., Martínez, O., Jiménez, J., Díaz, F., Aguiló, M. & O’Dwyer, C. (2014) 'Fully porous GaN p-n junctions fabricated by chemical vapor deposition'. Acs Applied Materials & Interfaces, 6 :17954-17964   [Full Text] [Details]
(2014)'Enhanced UV luminescence from InAlN quantum well structures using two temperature growth'
Zubialevich, VZ;Sadler, TC;Dinh, DV;Alam, SN;Li, HN;Pampili, P;Parbrook, PJ (2014) 'Enhanced UV luminescence from InAlN quantum well structures using two temperature growth'. Luminescence, 155 :108-111 [DOI] [Details]
(2013)'Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping'
Kachkanov V.;Dolbnya I.;O'Donnell K.;Lorenz K.;Pereira S.;Watson I.;Sadler T.;Li H.;Zubialevich V.;Parbrook P. (2013) 'Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping'. Physica Status Solidi C - Current Topics In Solid State Physics, 10 (3):481-485 [DOI] [Details]
(2013)'The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures'
Smith, MD;Sadler, TC;Li, HN;Zubialevich, VZ;Parbrook, PJ (2013) 'The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures'. Applied Physics Letters, 103 [DOI] [Details]
(2013)'Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping'
Kachkanov, Vyacheslav and Dolbnya, Igor and O'Donnell, Kevin and Lorenz, Katharina and Pereira, Sergio and Watson, Ian and Sadler, Thomas and Li, Haoning and Zubialevich, Vitaly and Parbrook, Peter (2013) 'Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping'. Physica Status Solidi (C) Current Topics in Solid State Physics, 10 (3):481-485 [Details]
(2014)'Comparative study of polar and semipolar (11-22) InGaN layers grown by metalorganic vapour phase epitaxy'
Dinh, Duc V and Oehler, F and Zubialevich, VZ and Kappers, MJ and Alam, SN and Caliebe, M and Scholtz, F and Humphreys, CJ and Parbrook, PJ (2014) 'Comparative study of polar and semipolar (11-22) InGaN layers grown by metalorganic vapour phase epitaxy'. Journal of Applied Physics, 116 (15) [Details]
(2014)'Enhanced UV luminescence from InAlN quantum well structures using two temperature growth'
Zubialevich, Vitaly Z and Sadler, Thomas C and Dinh, Duc V and Alam, Shahab N and Li, Haoning and Pampili, Pietro and Parbrook, Peter J (2014) 'Enhanced UV luminescence from InAlN quantum well structures using two temperature growth'. Journal of Luminescence, 155 :108-111 [Details]
(2013)'Fabrication of p-type porous GaN on silicon and epitaxial GaN'
Bilousov, OV,Geaney, H,Carvajal, JJ,Zubialevich, VZ,Parbrook, PJ,Giguere, A,Drouin, D,Diaz, F,Aguilo, M,O'Dwyer, C (2013) 'Fabrication of p-type porous GaN on silicon and epitaxial GaN'. Applied Physics Letters, 103 [DOI] [Details]

Other Journals

 YearPublication
(2013)'Cathodoluminscence of barium and calcium thioand selenogallates co-doped with rare-earth elements'
Pavlovskii, VN and Zubialevich, VZ and Lutsenko, EV and Yablonskii, GP and Pashaev, AM and Tagiev, BG and Abushov, SA and Tagiev, OB (2013) 'Cathodoluminscence of barium and calcium thioand selenogallates co-doped with rare-earth elements' Journal of Applied Spectroscopy, 80 :215-219. [Details]
(2011)'SET-UP FOR THE MEASUREMENT OF SPATIAL DISTRIBUTION OF THE LASER DIODES RADIATION AND THE LUMINOUS INTENSITY OF LEDS AND LED-LIGHTING'
NIKANENKA, SV and LUTSENKO, EV and ZUBIALEVICH, VZ and RZHEUTSKII, MV and ZHDANOVSKII, VA and DANILCHYK, AV and YABLONSKII, GP and DLUGUNOVICH, VA (2011) 'SET-UP FOR THE MEASUREMENT OF SPATIAL DISTRIBUTION OF THE LASER DIODES RADIATION AND THE LUMINOUS INTENSITY OF LEDS AND LED-LIGHTING' Doklady BGIUR (in Russian), :101-106. [Details]
(2011)'Effect of excitation level on the photoluminescence of barium thiogallate activated with europium and cerium ions'
Zubialevich, VZ and Lutsenko, EV and Danilchyk, AV and Muravitskaya, EV and Yablonskii, GP and Pashaev, AM and Tagiev, BG and Tagiev, OB and Abushov, SA (2011) 'Effect of excitation level on the photoluminescence of barium thiogallate activated with europium and cerium ions' Journal of Applied Spectroscopy, 78 (2) :234-239. [Details]
(2009)'OPTICAL GAIN SPECTRA AND LASER ACTION OF InGaN/GaN MQWs GROWN ON SILICON AT PUMPING BY FEMTOSECOND PULSES'
DANILCHYK, AV and LUTSENKO, EV and ZUBIALEVICH, VZ and PAVLOVSKII, VN and YABLONSKII, GP and SCHINELLER, B and HEUKEN, M and DIKME, Y and KHOSHROO, L and KALISCH, H (2009) 'OPTICAL GAIN SPECTRA AND LASER ACTION OF InGaN/GaN MQWs GROWN ON SILICON AT PUMPING BY FEMTOSECOND PULSES' Physics, Chemistry and Application of Nanostructures: Proceedings of the International Conference, Nanomeeting--2009: Reviews and Short Notes: Minsk, Belarus, 26-29 May 2009, . [Details]
(2008)'Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates'
Zubialevich, VZ and Lutsenko, EV and Pavlovskii, VN and Gurskii, AL and Danilchyk, AV and Yablonskii, GP and Danailov, MB and Ressel, B and Demidovich, AA and Woitok, JF and others (2008) 'Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates' Journal of Applied Spectroscopy, 75 (1) :96-103. [Details]

Conference Publications

 YearPublication
(2018)2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)
Zubialevich, Vitaly Z.; Pampili, Pietro; McLaren, M.; Arredondo-Arechavala, M.; Sabui, G.; Shen, Z. J.; Parbrook, Peter J. (2018) Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) Cork, Ireland, , 23-JUL-18 - 26-JUL-18 , pp.1-3   [DOI] [Full Text] [Details]
(2017)International Symposium on Power Semiconductor Devices and ICs
Sabui G.;Zubialevich V.;White M.;Pampili P.;Parbrook P.;McLaren M.;Arredondo-Arechavala M.;Shen Z. (2017) Design considerations of vertical GaN nanowire Schottky barrier diodes International Symposium on Power Semiconductor Devices and ICs , pp.191-194 [DOI] [Details]
(2015)2015 IEEE Summer Topicals Meeting Series, SUM 2015
Parbrook P.;Pampili P.;Akhter M.;Eason C.;Zubialevich V.;Maaskant P.;Quan Z.;O'Brien P.;Corbett B. (2015) MHz operation of 250 nm ultra-violet micro-light emitting diodes 2015 IEEE Summer Topicals Meeting Series, SUM 2015 , pp.173-174 [DOI] [Details]
(2015)2015 IEEE Summer Topicals Meeting Series, SUM 2015
Pampili P.;Akhter M.;Eason C.;Zubialevich V.;Maaskant P.;Quan Z.;O'Brien P.;Corbett B.;Parbrook P. (2015) 250-nm emitting LED optimized for optical fibre coupling 2015 IEEE Summer Topicals Meeting Series, SUM 2015 , pp.177-178 [DOI] [Details]
(2010)Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on
Lutsenko, EV and Pavlovskii, VN and Danilchyk, AV and Rzheutski, MV and Vainilovich, AG and Zubialevich, VZ and Muravitskaya, AV and Yablonskii, GP (2010) Determination of active region overheating temperature of GaN-based light emitting diodes promising for laser media pumping Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on , pp.219-221 [Details]
(2010)The 6th International Conference on Rare Earth Development and Application
ZUBIALEVICH, Vitaly Z and LUTSENKO, Evgenii V and MURAVITSKAYA, Alena V and YABLONSKII, Gennadii P and PASHAYEV, Arif M and TAGIEV, Bahadur G and TAGIEV, Oktay B and ABUSHOV, Seid A (2010) High thermal and excitation intensity stability of luminescence from BaGa\_2S\_4 co doped with ions of europium and cerium The 6th International Conference on Rare Earth Development and Application [Details]
(2010)Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on
Pavlovskii, VN and Lutsenko, EV and Danilchyk, AV and Zubialevich, VZ and Muravitskaya, AV and Yablonskii, GP and Kalisch, H and Jansen, RH and Schineller, B and Heuken, M (2010) Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on , pp.265-267 [Details]
(2009)7th Belarusian-Russian Workshop SEMICONDUCTOR LASERS AND SYSTEMS; Minsk, Belarus; 1-5 June 2009
Pavlovskii, VN and Rzheutski, MV and Lutsenko, EV and Vainilovich, AG and Danilchyk, AV and Zubialevich, VZ and Yablonskii, GP and Behmenburg, H and Mauder, C and Kalisch, H and others (2009) Photoluminescence of III--nitride heterostructures grown with nonpolar orientation on lithium aluminium oxide substrates 7th Belarusian-Russian Workshop SEMICONDUCTOR LASERS AND SYSTEMS; Minsk, Belarus; 1-5 June 2009 , pp.267-270 [Details]
(2005)Nanomeeting-2005
GURSKII, AL and LUTSENKO, EV and PAVLOVSKII, VN and ZUBIALEVICH, VZ and DANIL'CHIK, AV and OSIPOV, KA and YABLONSKII, GP and SHULENKOV, AS and HRYSHANAU, VA and STOGNIJ, AI and others (2005) ELECTRICAL AND OPTICAL PROPERTIES OF AlGaN/GaN HEMT STRUCTURES WITH 2-DIMENSIONAL ELECTRON GAS GROWN BY MOCVD ON SAPPHIRE AND Si (111) SUBSTRATES Nanomeeting-2005 Minsk, Belarus, , 24-MAY-05 - 27-MAY-05 , pp.539-543 [Details]
(2003)Compound Semiconductors, 2003. International Symposium on
Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Gurskii, AL and Ryabtsev, AG and Ryabtsev, GI and Yablonskii, GP and Dikme, Y and Szymakowski, A and Kalisch, H and others (2003) High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates Compound Semiconductors, 2003. International Symposium on , pp.141-142 [Details]
(2003)International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems
Yablonskii, Gennadii P and Lutsenko, Evgenii V and Pavlovskii, Vyacheslav N and Zubialevich, Vitaly Z and Gurskii, Alexander L and Kalisch, Holger and Jansen, Rolf H and Heime, Klaus and Schineller, Bernd and Heuken, Michael (2003) ZnMgSSe/ZnSe separate confinement heterostructure multiple quantum well lasers International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems , pp.220-226 [Details]
(2003)2003 International Symposium on Compound Semiconductors
Gurskii, AL and Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Ryabtsev, AG and Ryabtsev, GI and Yablonskii, GP and Dikme, Y and Szymakovski, A and Kalisch, H and others (2003) High temperature operation of optically pumped InGaN/GaN MQW heterostructure lasers grown on Si substrates 2003 International Symposium on Compound Semiconductors , pp.197-203 [Details]
(2003)International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems
Schineller, Bernd and Protzmann, Harry and Luenenbuerger, Markus and Gerstenbrandt, Georg and Heuken, Michael and Lutsenko, Evgenii V and Zubialevich, Vitaly Z and Pavlovskii, Vyacheslav N and Gurskii, Alexander L and Yablonskii, Gennadii P (2003) InGaN/GaN violet-blue multiple quantum well heterostructure lasers for temperature range of 80-450 K International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems , pp.213-219 [Details]
(2003)Nanomeeting-2003
YABLONSKII, GP and LUTSENKO, EV and GURSKII, AL and PAVLOVSKI, VN and ZUBIALEVICH, VZ and KALISCH, H and SZYMAKOWSKI, A and DIKME, Y and JANSEN, RH and WOITOK, JF and others (2003) InGaN/GaN QUANTUM WELL HETEROSTRUCTURES GROWN ON SILICON FOR UV-BLUE LASERS AND LIGHT EMITTING DIODES Nanomeeting-2003 Minsk, Belarus, , 20-MAY-03 - 23-MAY-03 , pp.541-544 [Details]
(2002)XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001)
Yablonskii, Gennadii P and Lutsenko, Evgenii V and Zubialevich, Vitalii Z and Pavlovskii, Vyacheslav N and Marko, Igor P and Gurskii, Alexander L and Alam, Assadullah and Protzmann, Harry and Luenenbuerger, Markus and Schineller, Bernd and others (2002) Spectral-angular and threshold characteristics of ultraviolet-blue In (Al) GaN/GaN/Al2O3 heterostructure lasers XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001) , pp.449-454 [Details]
(2002)XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001)
Lutsenko, Evgenii V and Zubialevich, Vitalii Z and Pavlovskii, Vyacheslav N and Marko, Igor P and Gurskii, Alexander L and Yablonskii, Gennadii P and Kalisch, Holger and Walther, Thomas and Schoen, Oliver and Protzmann, Harry and others (2002) Optically pumped transverse lasers based on ZnMgSSe/ZnSe and InGaN/GaN heterostructures XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001) , pp.542-548 [Details]

Book Chapters

 YearPublication
(2004)'Stimulated Emission and Gain in GaN Epilayers Grown on Si'
Gurskii, AL and Lutsenko, EV and Zubialevich, VZ and Pavlovskii, VN and Yablonskii, GP and Kazlauskas, K and Tamulaitis, G and Jursenas, S and Zukauskas, A and Dikme, Y and others (2004) 'Stimulated Emission and Gain in GaN Epilayers Grown on Si' In: Michael S. Shur, Artūras Žukauskas (eds). UV Solid-State Light Emitters and Detectors. Netherlands: Springer Netherlands.   [DOI] [Details]
(2004)'Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures'
Yablonskii, GP and Gurskii, AL and Lutsenko, EV and Zubialevich, VZ and Pavlovskii, VN and Anufryk, AS and Dikme, Y and Kalisch, H and Jansen, RH and Schineller, B and others (2004) 'Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures' In: Michael S. Shur, Artūras Žukauskas (eds). UV Solid-State Light Emitters and Detectors. Netherlands: Springer Netherlands.   [DOI] [Details]

Professional Activities

Honours and Awards

 YearTitleAwarding Body
2022SPRINT One to Watch Award GatewayUCC

Research Information

Internal Collaborators

 NameInstituteCountry
Pietro Pampili Tyndall National InstituteIRELAND
Peter Parbrook

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