Research Profile

Farzan Gity

Biography

Dr Gity is a senior staff research scientist at Tyndall National Institute, University College Cork (UCC), Ireland. He has received his PhD in Electronics Engineering from Tyndall, UCC in 2013 and awarded best PhD student BOC bursary for his PhD research work, in 2013. He was then awarded Irish Research Council (IRC) fellowship on developing semimetal-based nanoelectronic devices.

Dr Gity was the Principal Investigator (PI) of EU-H2020 SaSHa project at Tyndall (
http://www.sashaproject.eu/). In 2017, Dr Gity received Science Foundation Ireland (SFI), Technology Innovation and Development Award (TIDA) focusing on integrating dissimilar materials for novel integrated electronic applications, focusing on understanding of carrier transport through interfacial ultrathin oxide layersDr Gity is Ireland’s only delegate in the management committee of EU-COST Action CA17123 on ‘Ultrafast opto-magneto-electronics for non-dissipative information technology (https://www.cost.eu/actions/CA17123/).

In 2019, Dr Gity has been awarded UCC’s Early Stage Researcher of the Year Award

Dr Gity was on the Technical Program Committee and one of the local organisers of the IEEE NANO conference held at UCC in July 2018.

Dr. Gity's activities involve Emerging Materials and Devices for future nanoelectronic, ICT and spintronics applications, including fabrication, characterisation and modelling of devices. Dr Gity's research focus is on addressing key technological challenges that are essential to the future evolution of Integrated Circuits (ICs) beyond Moore’s Law, needed for the future Trillion Sensor economy of the Internet of Things (IoT), and smart systems/cities. He has gained a wealth of experience in nano-scale material analysis, simulations and design, fabrication and characterisation of electronic and photonic devices through collaborative projects with industry, and by delivering industry-level, high-standard and high-impact research.
In particular, his research interest is heterogeneous-integration of low-dimensional materials, e.g., 2D and (poly)crystalline III-V for advanced nanoelectronics and photonics applications. 

He has had collaborative research projects or technical engagements with international industrial multinationals, including Intel and Applied Materials. He is the lead inventor of a US patent application (2015/0303345), one invention disclosure on “semimetal-based devices”, and one on “full wafer low-thermal budget integration of dissimilar materials for back-end-of-line (BEOL) integration”. 

Over the past 10 years he has been a technical reviewer for peer-reviewed journals including Nano Energy, ACS Applied Materials and Interfaces, ACS Sensors, IEEE Transactions on Electron Devices, IEEE Electron Device Letters, IEEE Photonics Technology Letters, Applied Physics Letters, and Journal of Applied Physics among others.


His role involves:
- project management,
- budget management and purchasing,
- PhD student supervision and mentoring,
- dissemination of results in peer-reviewed articles.

Research Interests

Dr. Gity's activities involve Emerging Materials and Devices for future nanoelectronic, ICT and spintronics applications, including fabrication, characterisation and modelling of devices. Dr Gity's research focus is on addressing key technological challenges that are essential to the future evolution of Integrated Circuits (ICs) beyond Moore’s Law, needed for the future Trillion Sensor economy of the Internet of Things (IoT), and smart systems/cities.
In particular, Dr Gity's research interest is heterogeneous-integration of low-dimensional materials, e.g., 2D and (poly)crystalline III-V for advanced nanoelectronics, photonics and spintronics applications.

Research Grants

 ProjectFunding
Body
Start DateEnd DateAward
EU H2020 ShaSha - Si on SiC for the Harsh Environment of Space [X]Horizon 202001-FEB-1631-JAN-18€252,034.00
Gated INTERfaces for FAST information processing (INTERFAST) - FET OPENEuropean Commission01-MAY-2101-MAY-24€427,120.00
ALD of dielectric on large-area TMDs for on-chip transistor and memory applicationsMiscellaneous01-OCT-1931-DEC-20€24,900.00
SiC/Si 3D integration for the first time by CMOS- and BEOL-compatible direct wafer bonding processScience Foundation of Ireland01-JAN-1731-MAR-20€125,506.00
Dopant free, Mono material, next generation nanowire transistorsIrish Research Council01-OCT-1631-OCT-18€91,690.00

Publications

Peer Reviewed Journals

 YearPublication
(2021)'Doping of Ultra-Thin Si Films: Combined First-Principles Calculations and Experimental Study (This paper has been featured on the cover of Journal of Applied Physics)'
Farzan Gity, Fintan Meaney, Anya Curran, Paul K. Hurley, Stephen Fahy, Ray Duffy, and Lida Ansari (2021) 'Doping of Ultra-Thin Si Films: Combined First-Principles Calculations and Experimental Study (This paper has been featured on the cover of Journal of Applied Physics)'. Journal of Applied Physics, 121   [DOI] [Full Text] [Details]
(2021)'Large-area growth of MoS2at temperatures compatible with integrating back-end-of-line functionality'
Lin J.;Monaghan S.;Sakhuja N.;Gity F.;Jha R.K.;Coleman E.M.;Connolly J.;Cullen C.P.;Walsh L.A.;Mannarino T.;Schmidt M.;Sheehan B.;Duesberg G.S.;McEvoy N.;Bhat N.;Hurley P.K.;Povey I.M.;Bhattacharjee S. (2021) 'Large-area growth of MoS2at temperatures compatible with integrating back-end-of-line functionality'. 2d Materials, 8 (2) [DOI] [Details]
(2021)'Imaging and identification of point defects in PtTe2'
K. Zhussupbekov, L. Ansari, J. B. McManus, A. Zhussupbekova, I. V. Shvets, G. S. Duesberg, P. K. Hurley, F. Gity*, C. Ó Coileáin*, and N. McEvoy* (* corresponding author) (2021) 'Imaging and identification of point defects in PtTe2'. Npj 2d Materials And Applications,   [DOI] [Details]
(2020)'Insights into Multilevel Resistive Switching in Monolayer MoS2'
Bhattacharjee S;Caruso E;McEvoy N;Ó Coileáin C;O'Neill K;Ansari L;Duesberg GS;Nagle R;Cherkaoui K;Gity F;Hurley PK; (2020) 'Insights into Multilevel Resistive Switching in Monolayer MoS2'. Acs Applied Materials & Interfaces, 12 (5) [DOI] [Details]
(2020)'Isotropic conduction and negative photoconduction in ultrathin PtSe2 films'
Urban, Francesca; Gity, Farzan; Hurley, Paul K.; McEvoy, Niall; Di Bartolomeo, Antonio (2020) 'Isotropic conduction and negative photoconduction in ultrathin PtSe2 films'. Applied Physics Letters, 117 (19)   [DOI] [Full Text] [Details]
(2020)'The role of oxide traps aligned with the semiconductor energy gap in MOS systems'
Caruso,Enrico; Lin, Jun; Monaghan, Scott; Cherkaoui, Karim; Gity, Farzan; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Hurley, Paul K. (2020) 'The role of oxide traps aligned with the semiconductor energy gap in MOS systems'. IEEE Transactions On Electron Devices, 67 (10):4372-4378 [DOI] [Full Text] [Details]
(2020)'Investigating the transient response of Schottky barrier back-gated MoS2 transistors'
Marquez, Carlos; Salazar, Norberto; Gity, Farzan; Navarro, Carlos; Mirabelli, Gioele; Galdon, Jose Carlos; Duffy, Ray; Navarro, Santiago; Hurley, Paul, K.; Gamiz, Francisco (2020) 'Investigating the transient response of Schottky barrier back-gated MoS2 transistors'. 2d Materials,   [DOI] [Full Text] [Details]
(2019)'Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C'
Ansari L.;Monaghan S.;McEvoy N.;Coileáin C.;Cullen C.;Lin J.;Siris R.;Stimpel-Lindner T.;Burke K.;Mirabelli G.;Duffy R.;Caruso E.;Nagle R.;Duesberg G.;Hurley P.;Gity F. (2019) 'Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C'. Npj 2d Materials And Applications, 3 (1) [DOI] [Details]
(2019)'Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5nm'
MacHale, John; Meaney, Fintan; Kennedy, Fintan; Eaton, Luke; Mirabelli, Gioele; White, Mary; Thomas, Kevin; Pelucchi, Emanuele; Hjorth Petersen, Dirch; Lin, Rong; Petkov, Nikolay; Connolly, James; Hatem, Chris; Gity, Farzan; Ansari, Lida; Long, Brenda; Duffy, Ray (2019) 'Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5nm'. Journal of Applied Physics, 125   [DOI] [Full Text] [Details]
(2019)'Growth of 1T ' MoTe2 by Thermally Assisted Conversion of Electrodeposited Tellurium Films'
Mc Manus, John B.; Cunningham, Graeme; McEvoy, Niall; Cullen, Conor P.; Gity, Farzan; Schmidt, Michael; McAteer, David; Mullarkey, Daragh; Shvets, Igor V.; Hurley, Paul K.; Hallam, Toby; Duesberg, Georg S. (2019) 'Growth of 1T ' MoTe2 by Thermally Assisted Conversion of Electrodeposited Tellurium Films'. ACS Applied Energy Materials, 2 :521-530 [DOI] [Full Text] [Details]
(2019)'Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation'
Mirabelli G.;Walsh L.;Gity F.;Bhattacharjee S.;Cullen C.;Ó Coileáin C.;Monaghan S.;McEvoy N.;Nagle R.;Hurley P.;Duffy R. (2019) 'Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation'. ACS Omega, 4 (17):17487-17493 [DOI] [Details]
(2018)'Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes'
Yim, C;McEvoy, N;Riazimehr, S;Schneider, DS;Gity, F;Monaghan, S;Hurley, PK;Lemme, MC;Duesberg, GS (2018) 'Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes'. Nanoletters, 18 :1794-1800 [DOI] [Details]
(2018)'Metal-semimetal Schottky diode relying on quantum confinement'
Gity, F.; Ansari, L.; König⁠, C.; Verni, G. A.; Holmes, J. D.; Long, B.; Lanius, M.; Schüffelgen, P.; Mussler, G.; Grützmacher, D.; Greer, J. C. (2018) 'Metal-semimetal Schottky diode relying on quantum confinement'. Microelectronic Engineering, 195 :21-25   [DOI] [Full Text] [Details]
(2018)'Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers'
Verni, GA;Long, B;Gity, F;Lanius, M;Schuffelgen, P;Mussler, G;Grutzmacher, D;Greer, J;Holmes, JD (2018) 'Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers'. RSC Advances, 8 :33368-33373 [DOI] [Details]
(2018)'Development, characterisation and simulation of wafer bonded Si-on-SiC substrates'
Gammon, PM;Chan, CW;Li, F;Gity, F;Trajkovic, T;Pathirana, V;Flandre, D;Kilchytska, V (2018) 'Development, characterisation and simulation of wafer bonded Si-on-SiC substrates'. Materials Science In Semiconductor Processing, 78 :69-74 [DOI] [Details]
(2018)'Two-Dimensional Materials and Their Role in Emerging Electronic and Photonic Devices'
O'Dwyer, C;Walsh, LA;Gity, F;Bhattacharjee, S;Hurley, PK (2018) 'Two-Dimensional Materials and Their Role in Emerging Electronic and Photonic Devices'. Electrochemical Society Interface, 27 :53-58 [DOI] [Details]
(2017)'Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films'
Gity, Farzan; Ansari, Lida; Lanius, Martin; Schüffelgen, Peter; Mussler, Gregor; Grützmacher, Detlev; Greer, James C. (2017) 'Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films'. Applied Physics Letters, 110 (9) [DOI] [Full Text] [Details]
(2017)'Rhenium-doped MoS2 films'
Hallam, Toby; Monaghan, Scott; Gity, Farzan; Ansari, Lida; Schmidt, Michael; Downing, Clive; Cullen, Conor P.; Nicolosi, Valeria; Hurley, Paul K.; Duesberg, Georg S. (2017) 'Rhenium-doped MoS2 films'. Applied Physics Letters, 111 (20)   [DOI] [Full Text] [Details]
(2017)'Electronic and structural properties of rhombohedral [1 1 1] and [1 1 0] oriented ultra-thin bismuth nanowires'
Ansari, Lida; Gity, Farzan; Greer, James, C. (2017) 'Electronic and structural properties of rhombohedral [1 1 1] and [1 1 0] oriented ultra-thin bismuth nanowires'. Journal of Physics: Condensed Matter, 29 (6) [DOI] [Full Text] [Details]
(2016)'Lithographically Defined, Room Temperature Low Threshold Subwavelength Red-Emitting Hybrid Plasmonic Lasers'
Liu, Ning; Gocalinska, Agnieszka M.; Justice, John; Gity, Farzan; Povey, Ian M.; McCarthy, Brendan; Pemble, Martyn E.; Pelucchi, Emanuele; Wei, Hong; Silien, Christophe; Xu, Hongxing; Corbett, Brian M. (2016) 'Lithographically Defined, Room Temperature Low Threshold Subwavelength Red-Emitting Hybrid Plasmonic Lasers'. Nano letters, 16 (12):7822-7828   [DOI] [Full Text] [Details]
(2016)'A sub k(B)T/q semimetal nanowire field effect transistor'
Ansari, Lida; Fagas, Gíorgos; Gity, Farzan; Greer, James C. (2016) 'A sub k(B)T/q semimetal nanowire field effect transistor'. Applied Physics Letters, 109   [DOI] [Full Text] [Details]
(2016)'Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2'
Mirabelli, G;McGeough, C;Schmidt, M;McCarthy, EK;Monaghan, S;Povey, IM;McCarthy, M;Gity, F;Nagle, R;Hughes, G;Cafolla, A;Hurley, PK;Duffy, R (2016) 'Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2'. Journal of Applied Physics, 120 [DOI] [Details]
(2014)'Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current'
Shayesteh, M,O' Connell, D,Gity, F,Murphy-Armando, P,Yu, R,Huet, K,Toque-Tresonne, I,Cristiano, F,Boninelli, S,Henrichsen, HH,Nielsen, PF,Petersen, DH,Duffy, R (2014) 'Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current'. IEEE Transactions On Electron Devices, 61 :4047-4055 [DOI] [Details]
(2013)'Ge/Si heterojunction photodiodes fabricated by low temperature wafer bonding'
Gity, F;Daly, A;Snyder, B;Peters, FH;Hayes, J;Colinge, C;Morrison, AP;Corbett, B (2013) 'Ge/Si heterojunction photodiodes fabricated by low temperature wafer bonding'. Optics Express, 21 :17309-17314 [DOI] [Details]
(2012)'Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation'
Gity, F;Byun, KY;Lee, KH;Cherkaoui, K;Hayes, JM;Morrison, AP;Colinge, C;Corbett, B (2012) 'Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation'. Applied Physics Letters, 100 [DOI] [Full Text] [Details]
(2011)'Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation'
Byun, KY;Fleming, P;Bennett, N;Gity, F;McNally, P;Morris, M;Ferain, I;Colinge, C (2011) 'Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation'. Journal of Applied Physics, 109 [DOI] [Details]
(2011)'Modeling the Effects of Interface Traps on the Static and Dynamic Characteristics of Ge/Si Avalanche Photodiodes'
Gity, F;Hayes, JM;Corbett, B;Morrison, AP (2011) 'Modeling the Effects of Interface Traps on the Static and Dynamic Characteristics of Ge/Si Avalanche Photodiodes'. IEEE Journal of Quantum Electronics, 47 :849-857 [DOI] [Details]
(2010)'Zero-Bias High-Speed Edge-Coupled Unitraveling-Carrier InGaAs Photodiode'
Yang, H;Daunt, CLLM;Gity, F;Lee, KH;Han, W;Corbett, B;Peters, FH (2010) 'Zero-Bias High-Speed Edge-Coupled Unitraveling-Carrier InGaAs Photodiode'. IEEE Photonics Technology Letters, 22 :1747-1749 [DOI] [Details]
(2006)'Numerical analysis of void-induced thermal effects on GaAs/AlxGa1-xAs high power single-quantum-well laser diodes'
Gity F.;Ahmadi V.;Noshiravani M. (2006) 'Numerical analysis of void-induced thermal effects on GaAs/AlxGa1-xAs high power single-quantum-well laser diodes'. Solid-State Electronics, 50 (11-12):1767-1773 [DOI] [Details]

Conference Publications

 YearPublication
(2019)2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Caruso, Enrico; Lin, Jun; Monaghan, Scott; Cherkaoui, Karim; Floyd, Liam; Gity, Farzan; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Hurley, Paul K. (2019) Relationship between capacitance and conductance in MOS capacitors 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Udine, Italy, , 04-SEP-19 - 06-SEP-19 , pp.1-4   [DOI] [Full Text] [Details]
(2018)2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017
Gity F.;Ansari L.;Monaghan S.;Mirabelli G.;Torchia P.;Hydes A.;Schmidt M.;Sheehan B.;Mcevoy N.;Hallam T.;Cherkaoui K.;Nagle R.;Duffy R.;Duesberg G.;Hurley P. (2018) Ex-situ plasma doping of MoS2 thin films synthesised by thermally assisted conversion process: Simulations and experiment 2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017 , pp.175-176 [DOI] [Details]
(2018)Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) 2018
Caruso, Enrico; Lin, Jun; Burke, K. F.; Cherkaoui,Karim; Esseni, D.; Gity, Farzan; Monaghan, Scott; Palestri, P.; Hurley, Paul K.; Selmi, L. (2018) Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) 2018 , pp.1-4 [DOI] [Full Text] [Details]
(2017)European Solid-State Device Research Conference
Mirabelli G.;Gity F.;Monaghan S.;Hurley P.;Duffy R. (2017) Impact of impurities, interface traps and contacts on MoS2 MOSFETs: Modelling and experiments European Solid-State Device Research Conference , pp.288-291 [DOI] [Details]
(2017)Materials Science Forum
Gammon P.;Li F.;Chan C.;Sanchez A.;Hindmarsh S.;Gity F.;Trajkovic T.;Kilchytska V.;Pathirana V.;Camuso G.;Ben Ali K.;Flandre D.;Mawby P.;Gardner J. (2017) The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices Materials Science Forum , pp.747-750 [DOI] [Details]
(2017)2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS)
TTorchia, Pasqualino; Pampili, Pietro; O’Connell, John; O’Brien, Joe; White, Mary; Schmidt, Michael; Sheehan, Brendan; Waldron, Finbarr; Holmes, Justin D.; Monaghan, Scott; Duffy, Ray; Trajkovic, T.; Kilchytska, V.; Gammon, P.; Cherkaoui, Karim; Hurley, Paul K.; Gity, Farzan (2017) Influence of free radical surface activation on Si/SiC heterogeneous integration by direct wafer bonding 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS) Athens, Greece, , 03-APR-17 - 05-APR-17 [Full Text] [Details]
(2017)11TH EUROPEAN SPACE POWER CONFERENCE
Gammon, PM;Chan, CW;Gity, F;Trajkovic, T;Kilchytska, V;Fan, L;Pathirana, V;Camuso, G;Ben Ali, K;Flandre, D;Mawby, PA;Gardner, JW (2017) DESIGN AND FABRICATION OF SILICON-ON-SILICON-CARBIDE SUBSTRATES AND POWER DEVICES FOR SPACE APPLICATIONS 11TH EUROPEAN SPACE POWER CONFERENCE [DOI] [Details]
(2017)European Solid-State Device Research Conference
Ben Ali K.;Gammon P.;Chan C.;Li F.;Pathirana V.;Trajkovic T.;Gity F.;Flandre D.;Kilchytska V. (2017) Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications European Solid-State Device Research Conference , pp.236-239 [DOI] [Details]
(2017)Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
Monaghan S.;Gity F.;Duffy R.;Mirabelli G.;McCarthy M.;Cherkaoui K.;Povey I.;Nagle R.;Hurley P.;Lindemuth J.;Napolitani E. (2017) Hall-effect mobility for a selection of natural and synthetic 2D semiconductor crystals Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings , pp.27-30 [DOI] [Details]
(2016)16th International Conference on Nanotechnology - IEEE NANO 2016
Ansari L.;Gity F.;Greer J. (2016) Atomic-scale simulation of semimetal-to-semiconductor transition in bismuth nanowires for future generation of nanoelectronic devices 16th International Conference on Nanotechnology - IEEE NANO 2016 , pp.963-965 [DOI] [Details]
(2015)IEEE-NANO 2015 - 15th International Conference on Nanotechnology
Gardes C.;Justice J.;Gity F.;Yang H.;Corbett B. (2015) Numerical simulations with energy balance model for unitraveling-carrier photodiode IEEE-NANO 2015 - 15th International Conference on Nanotechnology , pp.350-353 [DOI] [Details]
(2014)Proceedings of the International Conference on Ion Implantation Technology
Shayesteh M.;O'Connell D.;Gity F.;Murphy-Armando F.;Yu R.;Huet K.;Toque-Tresonne I.;Cristiano F.;Boninelli S.;Henrichsen H.;Petersen D.;Nielsen P.;Duffy R. (2014) Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios Proceedings of the International Conference on Ion Implantation Technology [DOI] [Details]
(2012)OPTICAL AND QUANTUM ELECTRONICS
Hayes, JM;Gity, F;Corbett, B;Morrison, AP (2012) Modeling the effects of interface traps on passive quenching of a Ge/Si geiger mode avalanche photodiode OPTICAL AND QUANTUM ELECTRONICS , pp.119-124 [DOI] [Details]
(2012)Ge/Si p-n Diode Fabricated by Direct Wafer Bonding and Layer Exfoliation
Gity, F,Byun, KY,Lee, KH,Cherkaoui, K,Hayes, JM,Morrison, AP,Colinge, C,Corbett, B,Roozeboom, F,Kakushima, K,Iwai, H,Timans, PJ,Narayanan V,Kwong, DL,Gusev, EP (2012) SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 2 Ge/Si p-n Diode Fabricated by Direct Wafer Bonding and Layer Exfoliation , pp.131-139 [DOI] [Details]
(2011)MICROELECTRONIC ENGINEERING
Byun, KY;Ferain, I;Hayes, J;Yu, R;Gity, F;Colinge, C (2011) Surface activation using oxygen and nitrogen radical for Ge-Si Avalanche photodiode integration MICROELECTRONIC ENGINEERING , pp.522-525 [DOI] [Details]
(2011)Materials Research Society Symposium Proceedings
Byun K.;Hayes J.;Gity F.;Corbett B.;Colinge C. (2011) Wafer bonded Ge-Si heterostructure for avalanche photodiode application Materials Research Society Symposium Proceedings , pp.38-43 [DOI] [Details]
(2010)Structural and electrical properties of low temperature direct bonded Germanium to Silicon wafer for photodetector applications
Yu, R,Byun, KY,Gity, F,Hayes, J,Ferain, I,Colinge, C,Corbett, B,Colinge, C,Baumgart, H,Moriceau, H,Bagdahn, J,Hobart, KD,Suga, T (2010) SEMICONDUCTOR WAFER BONDING 11: SCIENCE, TECHNOLOGY, AND APPLICATIONS - IN HONOR OF ULRICH GOSELE Structural and electrical properties of low temperature direct bonded Germanium to Silicon wafer for photodetector applications , pp.161-168 [DOI] [Details]
(2010)OPTOELECTRONIC DEVICES AND INTEGRATION III
Yang, H;Daunt, CLLM;Gity, F;Lee, K;Han, W;Thomas, K;Corbett, B;Peters, FH (2010) Design and fabrication of uni-traveling-carrier InGaAs photodiodes OPTOELECTRONIC DEVICES AND INTEGRATION III [DOI] [Details]
(2010)ADVANCED PHOTON COUNTING TECHNIQUES IV
Morrison, AP;Hayes, JM;Gity, F;Corbett, B (2010) Progress towards photon counting between 1 mu m and 1.6 mu m using silicon with infra-red absorbers ADVANCED PHOTON COUNTING TECHNIQUES IV [DOI] [Details]
(2009)ICICS 2009 - Conference Proceedings of the 7th International Conference on Information, Communications and Signal Processing
Gity F.;Ansari L. (2009) Modeling the effects of DLTs and carrier transport on the turn-on delay, steady-state time and wavelength chirp of SCH-QW lasers ICICS 2009 - Conference Proceedings of the 7th International Conference on Information, Communications and Signal Processing [DOI] [Details]
(2008)Proceedings of CAOL 2008: 4th International Conference on Advanced Optoelectronics and Lasers
Ansari L.;Gity F. (2008) Modeling and numerical analysis of static, dynamic and wavelength chirp characteristics of asymmetric multiple quantum well lasers Proceedings of CAOL 2008: 4th International Conference on Advanced Optoelectronics and Lasers , pp.236-238 [DOI] [Details]
(2008)2008 International Conference on Laser and Fiber-Optical Networks Modeling, LFNM 2008
Gity F.;Moghaddasi M.;Ansari L. (2008) Modeling and numerical analysis of temperature variations along the cavity and in the heat sink of a single quantum well high power laser diode 2008 International Conference on Laser and Fiber-Optical Networks Modeling, LFNM 2008 , pp.26-28 [DOI] [Details]
(2008)LFNM 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON LASER AND FIBER-OPTICAL NETWORK MODELING
Gity, F;Moghaddasi, MN;Ansari, L (2008) MODELING AND NUMERICAL ANALYSIS OF TEMPERATURE VARIATIONS ALONG THE CAVITY AND IN THE HEAT SINK OF A SINGLE QUANTUM WELL HIGH POWER LASER DIODE LFNM 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON LASER AND FIBER-OPTICAL NETWORK MODELING [Details]
(2007)4th IEEE and IFIP International Conference on Wireless and Optical Communications Networks, WOCN 2007
Gity F.;Mirzakuchaki S.;Zarifkar A.;Ansari L. (2007) Modeling the effects of deep level traps and carrier transport on the L-I characteristic, transient response and wavelength chirp of SCH-QW lasers 4th IEEE and IFIP International Conference on Wireless and Optical Communications Networks, WOCN 2007 [DOI] [Details]
(2007)2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE
Gity F.;Naser Moghaddasi M.;Ansari L. (2007) Modelling and numerical analysis of carrier transport effects on the wavelength chirp of SCH-QW lasers 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE , pp.508-510 [DOI] [Details]
(2006)IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Seyedfaraji A.;Ahmadi V.;Noshiravani M.;Gity F. (2006) Numerical analysis of filamentation in conventional double heterostructure and quantum well high-power broad-area laser diodes IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE , pp.1019-1023 [DOI] [Details]
(2006)2006 IEEE GCC Conference, GCC 2006
Gity F.;Ahmadi V.;Noshiravani M.;Abedi K. (2006) Numerical analysis of void-induced thermal effects on GaAs/AlGaAs high power quantum well laser diodes 2006 IEEE GCC Conference, GCC 2006 [DOI] [Details]
(2006)2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS
Seyedfaraji, A;Ahmadi, V;Noshiravani, M;Gity, F (2006) Numerical analysis of filamentation in conventional double heterostructure and quantum well high-power broad-area laser diodes 2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS [Details]
(2006)2006 IEEE GCC Conference, GCC 2006
Abedi K.;Ahmadi V.;Moravvej-Farshi M.;Sheikhi M.;Gity F. (2006) Non-physical model of lossy transmission line for circuit simulation of segmented traveling wave electroabsorption modulators 2006 IEEE GCC Conference, GCC 2006 [DOI] [Details]

Professional Activities

Honours and Awards

 YearTitleAwarding Body
2019Early Stage Researcher of the Year UCC
2013BOC best PhD student bursary BOC

Professional Associations

 AssociationFunctionFrom / To
American Chemical Society (ACS) Membership/

Patents

 Patent NumberTitleGranted
US20150303345A1Amplified detector formed by low temperature direct wafer bonding 01-OCT-15

Committees

 CommitteeFunctionFrom / To
IEEE NMDC 2020 Technical Program Committee/
IEEE NMDC 2019 Technical Program Committee/
MSc and PhD theses committee Monitor, advisor/
IEEE NANO 2018 Technical Program Committee/

Outreach Activities

 Description

Science festival - Science Week Cork

Public broadcast • Tyndall’s FlexiFab (3rd min) - link: http://www.youtube.com/watch?v=ZZHg-aDjJUA • Role in SaSHa project (3rd min) - link: http://sashaproject.eu/ (objectives tab)

Discovery Science Exhibition

Journal Activities

 JournalRoleTo / From
Crystals Guest Editor-
Nano Energy Referee-
Acs Applied Materials & Interfaces Referee-
Advanced Electronic Materials Referee-
Acs Sensors Referee-
Applied Physics Letters Referee-
Journal Of Applied Physics Referee-
Ieee Electron Device Letters Referee-
Ieee Transactions On Electron Devices Referee-
Ieee Photonics Technology Letters Referee-
Superlattices And Microstructures Referee-
Sensors And Actuators B: Chemical Referee-
Journal Of Physics D-Applied Physics Referee-
Aip Advances Referee-
Journal Of Electronic Materials Referee-

Other Activities

 Description

Supervision 
Experienced in supervising/co-supervising and mentoring one postdoc, two research assistances, two PhD and three MSc students, as well as few intern/visiting students and researchers

Completed full Epigeum training - Research Integrity and Ethics

Professional training
  • Professional Skills for Research Leaders (PSRL)
  • Leadership Development Programme (by Irish Management Institute (IMI))
  • Aspiring Research Leaders Programme (by Irish Management Institute (IMI))
  • Teaching and Learning Skill for Researchers
  • Postgraduate Research Supervision Training - (recipient of digital badge from National Forum for the Enhancement of Teaching and Learning in Higher Education) 

Translator of a university text book, 2003
Subject: VHDL programming language

Teaching Activities

Teaching Interests

“Processing of Integrated Circuits”
"Nanoelectronics"
"
Semiconductor Materials and Devices"


2006-2009
Lectured courses on:
  • physics of semiconductor devices, 
  • electronics I and II, 
  • FPGA, and 
  • VHDL

Research Information

Internal Collaborators

 NameInstituteCountry
Prof Colm O’Dwyer UCCIRELAND
Dr Lida Ansari Tyndall/UCCIRELAND

External Collaborators

 NameOrganisation / InstituteCountry
Dr Gregor Mussler Forschungszentrum JuelichGERMANY
Dr Davoud Dastan Georgia Tech (Georgia Institute of Technology)U.S.A.
Prof Ageeth A. Bol Eindhoven University of TechnologyHOLLAND
Dr Peter Gammon University of WarwickUNITED KINGDOM
Dr Valeriya Kilchytska Université catholique de Louvain (UCL)BELGIUM
Dr Niall McEvoy Trinity College DublinIRELAND
Dr Thierry Baron CEA-LETIFRANCE
Dr Toby Hallam Newcastle UniversityUNITED KINGDOM
Prof Merlyne De Souza University of SheffieldUNITED KINGDOM
Dr Peter Schüffelgen Forschungszentrum JuelichGERMANY
Prof Antonio Di Bartolomeo University of Salerno (Università degli Studi di Salerno)ITALY
Prof Georg S. Düsberg Universität der Bundeswehr MünchenGERMANY

Contact details

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University College Cork

Coláiste na hOllscoile Corcaigh

College Road, Cork T12 K8AF

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