Research Profile

Biography

Dr Ansari is a senior staff research scientist at the Micro-Nano Systems (MNS) Centre, Tyndall National Institute, University College Cork (UCC), Ireland. She has received her PhD in Microelectronics from Tyndall, UCC in 2013 and awarded best PhD student BOC bursary for her PhD research work in 2012. Her doctoral research work was focused on atomic-scale simulation of nanoelectronic devices. She was then awarded Irish Research Council (IRC) fellowship on developing semimetal-based nanosensors.

Dr Ansari was on the Technical Program Committee and one of the local organisers of the IEEE NANO conference held at UCC in July 2018.

Dr. Ansari's activities involve Emerging Materials and Devices for future nanoelectronic, ICT and spintronics applications, including simulation of emerging device concepts. Dr Ansari's research focus is on addressing key technological challenges that are essential to the future evolution of Integrated Circuits (ICs) beyond Moore’s Law, needed for the future Trillion Sensor economy of the Internet of Things (IoT), and smart systems/cities. She has gained a wealth of experience in nano-scale material simulations and design of electronic devices through collaborative projects with industry, and by delivering industry-level, high-standard and high-impact research. In particular, her research interest is low dimensional semiconductors and semimetals for beyond classical CMOS integration, surface effects in nanowires and other low-dimensional systems, atomic scale models for nanowire transistors and emerging device concepts.

Dr Ansari has had collaborative research projects or technical engagements with international industrial multinationals, including Intel and TSMC. She is the lead inventor of a US patent (US 10658460 B2) and an invention disclosure on “semimetal-based devices”. 

Over the past 10 years she has been a technical reviewer for peer-reviewed journals including ACS Applied Materials and Interfaces, IEEE Transactions on Electron Devices, Applied Physics Letters, and Journal of Applied Physics among others.


Her role involves:
- project management,
- budget management and purchasing,
- PhD student supervision and mentoring,
- dissemination of results in peer-reviewed articles.

Research Interests

Dr. Ansari's activities involve Emerging Materials and Devices for future nanoelectronic, ICT and spintronics applications, including simulation of emerging device concepts. Dr Ansari's research focus is on addressing key technological challenges that are essential to the future evolution of Integrated Circuits (ICs) beyond Moore’s Law, needed for the future Trillion Sensor economy of the Internet of Things (IoT), and smart systems/cities. 

In particular, her research interest is low dimensional semiconductors and semimetals for beyond classical CMOS integration, surface effects in nanowires and other low-dimensional systems, atomic scale models for nanowire transistors and emerging device concepts.

Research Grants

 ProjectFunding
Body
Start DateEnd DateAward
Ultra high sensitive nanowire sensors for biomedical applications by harnessing quantum confinement in semimetalsIrish Research Council01-OCT-1830-JAN-21€106,080.00

Publications

Peer Reviewed Journals

 YearPublication
(2021)'Doping of Ultra-Thin Si Films: Combined First-Principles Calculations and Experimental Study (This paper has been featured on the cover of Journal of Applied Physics)'
Farzan Gity; Fintan Meaney; Anya Curran; Paul Hurley; Stephen Fahy; Ray Duffy; and Lida Ansari (2021) 'Doping of Ultra-Thin Si Films: Combined First-Principles Calculations and Experimental Study (This paper has been featured on the cover of Journal of Applied Physics)'. Journal of Applied Physics,   [DOI] [Details]
(2021)'Imaging and identification of point defects in PtTe2 (* joint first authorship)'
K. Zhussupbekov*, L. Ansari*, J. B. McManus, A. Zhussupbekova, I. V. Shvets, G. S. Duesberg, P. K. Hurley, F. Gity, C. Ó Coileáin, and N. McEvoy (* joint first authorship) (2021) 'Imaging and identification of point defects in PtTe2 (* joint first authorship)'. Npj 2d Materials And Applications,   [DOI] [Details]
(2020)'Insights into Multilevel Resistive Switching in Monolayer MoS2'
Bhattacharjee S;Caruso E;McEvoy N;Ó Coileáin C;O'Neill K;Ansari L;Duesberg GS;Nagle R;Cherkaoui K;Gity F;Hurley PK; (2020) 'Insights into Multilevel Resistive Switching in Monolayer MoS2'. Acs Applied Materials & Interfaces, 12 (5) [DOI] [Details]
(2019)'Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C'
Ansari L.;Monaghan S.;McEvoy N.;Coileáin C.;Cullen C.;Lin J.;Siris R.;Stimpel-Lindner T.;Burke K.;Mirabelli G.;Duffy R.;Caruso E.;Nagle R.;Duesberg G.;Hurley P.;Gity F. (2019) 'Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C'. Npj 2d Materials And Applications, 3 (1) [DOI] [Details]
(2019)'Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5nm'
MacHale, John; Meaney, Fintan; Kennedy, Fintan; Eaton, Luke; Mirabelli, Gioele; White, Mary; Thomas, Kevin; Pelucchi, Emanuele; Hjorth Petersen, Dirch; Lin, Rong; Petkov, Nikolay; Connolly, James; Hatem, Chris; Gity, Farzan; Ansari, Lida; Long, Brenda; Duffy, Ray (2019) 'Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5nm'. Journal of Applied Physics, 125   [DOI] [Full Text] [Details]
(2018)'Properties of homo- and hetero-Schottky junctions from first principle calculations'
Greer, JC;Blom, A;Ansari, L (2018) 'Properties of homo- and hetero-Schottky junctions from first principle calculations'. Journal of Physics-Condensed Matter, 30 [DOI] [Details]
(2018)'Metal-semimetal Schottky diode relying on quantum confinement'
Gity, F.; Ansari, L.; König⁠, C.; Verni, G. A.; Holmes, J. D.; Long, B.; Lanius, M.; Schüffelgen, P.; Mussler, G.; Grützmacher, D.; Greer, J. C. (2018) 'Metal-semimetal Schottky diode relying on quantum confinement'. Microelectronic Engineering, 195 :21-25   [DOI] [Full Text] [Details]
(2017)'Electronic and structural properties of rhombohedral [1 1 1] and [1 1 0] oriented ultra-thin bismuth nanowires'
Ansari, Lida; Gity, Farzan; Greer, James, C. (2017) 'Electronic and structural properties of rhombohedral [1 1 1] and [1 1 0] oriented ultra-thin bismuth nanowires'. Journal of Physics: Condensed Matter, 29 (6) [DOI] [Full Text] [Details]
(2017)'Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films'
Gity, Farzan; Ansari, Lida; Lanius, Martin; Schüffelgen, Peter; Mussler, Gregor; Grützmacher, Detlev; Greer, James C. (2017) 'Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films'. Applied Physics Letters, 110 (9) [DOI] [Full Text] [Details]
(2017)'Rhenium-doped MoS2 films'
Hallam, Toby; Monaghan, Scott; Gity, Farzan; Ansari, Lida; Schmidt, Michael; Downing, Clive; Cullen, Conor P.; Nicolosi, Valeria; Hurley, Paul K.; Duesberg, Georg S. (2017) 'Rhenium-doped MoS2 films'. Applied Physics Letters, 111 (20)   [DOI] [Full Text] [Details]
(2016)'A sub k(B)T/q semimetal nanowire field effect transistor'
Ansari, Lida; Fagas, Gíorgos; Gity, Farzan; Greer, James C. (2016) 'A sub k(B)T/q semimetal nanowire field effect transistor'. Applied Physics Letters, 109   [DOI] [Full Text] [Details]
(2014)'Strain induced effects on electronic structure of semi-metallic and semiconducting tin nanowires'
Ansari, L,Fagas, G,Greer, JC (2014) 'Strain induced effects on electronic structure of semi-metallic and semiconducting tin nanowires'. Applied Physics Letters, 105 [DOI] [Full Text] [Details]
(2013)'First Principle-Based Analysis of Single-Walled Carbon Nanotube and Silicon Nanowire Junctionless Transistors'
Ansari, L,Feldman, B,Fagas, G,Lacambra, CM,Haverty, MG,Kuhn, KJ,Shankar, S,Greer, JC (2013) 'First Principle-Based Analysis of Single-Walled Carbon Nanotube and Silicon Nanowire Junctionless Transistors'. IEEE Transactions On Nanotechnology, 12 :1075-1081 [DOI] [Details]
(2013)'Transport properties and electrical device characteristics with the TiMeS computational platform: Application in silicon nanowires'
Sharma, D;Ansari, L;Feldman, B;Iakovidis, M;Greer, JC;Fagas, G (2013) 'Transport properties and electrical device characteristics with the TiMeS computational platform: Application in silicon nanowires'. Journal of Applied Physics, 113 [DOI] [Details]
(2012)'A proposed confinement modulated gap nanowire transistor based on a metal (tin)'
Ansari L, Fagas G, Colinge JP, Greer JC (2012) 'A proposed confinement modulated gap nanowire transistor based on a metal (tin)'. Nano Letters, 12 (5):2222-2227 [DOI] [Details]
(2010)'Simulation of junctionless Si nanowire transistors with 3 nm gate length'
Ansari, L;Feldman, B;Fagas, G;Colinge, JP;Greer, JC (2010) 'Simulation of junctionless Si nanowire transistors with 3 nm gate length'. Applied Physics Letters, 97 [DOI] [Details]
(2009)'An equivalent circuit model for analyzing separate confinement heterostructure quantum well laser diodes including chirp and carrier transport effects'
Zarifkar A.;Ansari L.;Moravvej-Farshi M. (2009) 'An equivalent circuit model for analyzing separate confinement heterostructure quantum well laser diodes including chirp and carrier transport effects'. Fiber And Integrated Optics, 28 (4):249-267 [DOI] [Details]

Conference Publications

 YearPublication
(2018)2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017
Gity F.;Ansari L.;Monaghan S.;Mirabelli G.;Torchia P.;Hydes A.;Schmidt M.;Sheehan B.;Mcevoy N.;Hallam T.;Cherkaoui K.;Nagle R.;Duffy R.;Duesberg G.;Hurley P. (2018) Ex-situ plasma doping of MoS2 thin films synthesised by thermally assisted conversion process: Simulations and experiment 2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017 , pp.175-176 [DOI] [Details]
(2016)16th International Conference on Nanotechnology - IEEE NANO 2016
Ansari L.;Gity F.;Greer J. (2016) Atomic-scale simulation of semimetal-to-semiconductor transition in bismuth nanowires for future generation of nanoelectronic devices 16th International Conference on Nanotechnology - IEEE NANO 2016 , pp.963-965 [DOI] [Details]
(2015)IEEE-NANO 2015 - 15th International Conference on Nanotechnology
Ansari L.;Fagas G.;Greer J. (2015) Strained semimetallic and semiconducting SnNW IEEE-NANO 2015 - 15th International Conference on Nanotechnology , pp.774-776 [DOI] [Details]
(2013)GRAPHENE, GE/III-V, AND EMERGING MATERIALS FOR POST CMOS APPLICATIONS 5
Ansari, L;Fagas, G;Greer, JC (2013) Semi-Metal Nanowire Transistors from First Principle Calculations GRAPHENE, GE/III-V, AND EMERGING MATERIALS FOR POST CMOS APPLICATIONS 5 , pp.259-267 [DOI] [Details]
(2012)SOLID-STATE ELECTRONICS
Ansari, L;Feldman, B;Fagas, G;Colinge, JP;Greer, JC (2012) Subthreshold behavior of junctionless silicon nanowire transistors from atomic scale simulations SOLID-STATE ELECTRONICS , pp.58-62 [DOI] [Details]
(2009)ICICS 2009 - Conference Proceedings of the 7th International Conference on Information, Communications and Signal Processing
Gity F.;Ansari L. (2009) Modeling the effects of DLTs and carrier transport on the turn-on delay, steady-state time and wavelength chirp of SCH-QW lasers ICICS 2009 - Conference Proceedings of the 7th International Conference on Information, Communications and Signal Processing [DOI] [Details]
(2008)Proceedings of CAOL 2008: 4th International Conference on Advanced Optoelectronics and Lasers
Ansari L.;Gity F. (2008) Modeling and numerical analysis of static, dynamic and wavelength chirp characteristics of asymmetric multiple quantum well lasers Proceedings of CAOL 2008: 4th International Conference on Advanced Optoelectronics and Lasers , pp.236-238 [DOI] [Details]
(2008)LFNM 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON LASER AND FIBER-OPTICAL NETWORK MODELING
Gity, F;Moghaddasi, MN;Ansari, L (2008) MODELING AND NUMERICAL ANALYSIS OF TEMPERATURE VARIATIONS ALONG THE CAVITY AND IN THE HEAT SINK OF A SINGLE QUANTUM WELL HIGH POWER LASER DIODE LFNM 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON LASER AND FIBER-OPTICAL NETWORK MODELING [Details]
(2008)2008 International Conference on Laser and Fiber-Optical Networks Modeling, LFNM 2008
Gity F.;Moghaddasi M.;Ansari L. (2008) Modeling and numerical analysis of temperature variations along the cavity and in the heat sink of a single quantum well high power laser diode 2008 International Conference on Laser and Fiber-Optical Networks Modeling, LFNM 2008 , pp.26-28 [DOI] [Details]
(2007)4th IEEE and IFIP International Conference on Wireless and Optical Communications Networks, WOCN 2007
Gity F.;Mirzakuchaki S.;Zarifkar A.;Ansari L. (2007) Modeling the effects of deep level traps and carrier transport on the L-I characteristic, transient response and wavelength chirp of SCH-QW lasers 4th IEEE and IFIP International Conference on Wireless and Optical Communications Networks, WOCN 2007 [DOI] [Details]
(2007)2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE
Gity F.;Naser Moghaddasi M.;Ansari L. (2007) Modelling and numerical analysis of carrier transport effects on the wavelength chirp of SCH-QW lasers 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE , pp.508-510 [DOI] [Details]

Professional Activities

Honours and Awards

 YearTitleAwarding Body
2012BOC best PhD student bursary BOC

Patents

 Patent NumberTitleGranted
US10658460B2Semi-metal tunnel field effect transistor 19-MAY-20

Committees

 CommitteeFunctionFrom / To
MSc and PhD theses committee Monitor, advisor/
Irish Centre for High-End Computing Science Council Review proposals requesting calculation time/
IEEE NANO 2018 Technical Program Committee/

Outreach Activities

 Description

Science week - Science festival Cork

Journal Activities

 JournalRoleTo / From
Acs Applied Materials & Interfaces Referee-
Acs Applied Nano Materials Referee-
Physical Chemistry Chemical Physics : Pccp Referee-
Ieee Transactions On Electron Devices Referee-
Crystals Guest Editor-
Journal Of Applied Physics Referee-
Applied Physics Letters Referee-

Other Activities

 Description

Supervision 
Experienced in supervising/co-supervising (mentoring) two research assistances, two PhD students and one MSc student, as well as few intern/visiting students and researchers

Completed full Epigeum training - Research Integrity and Ethics

Professional training
  • Professional Skills for Research Leaders (PSRL)
  • Teaching and Learning Skill for Researchers
  • Postgraduate Research Supervision Training - (recipient of digital badge from National Forum for the Enhancement of Teaching and Learning in Higher Education)

Teaching Activities

Teaching Interests

"Nanoelectronics"
"
Semiconductor Materials and Devices"

2006-2009
Lectured courses on:
  • physics of semiconductor devices, and
  • electronics I and II

Research Information

Internal Collaborators

 NameInstituteCountry
Dr Farzan Gity Tyndall/UCCIRELAND
Dr Ray Duffy Tyndall/UCCIRELAND
Prof Paul Hurley Tyndall/UCCIRELAND

External Collaborators

 NameOrganisation / InstituteCountry
Dr Gregor Mussler Forschungszentrum JuelichGERMANY
Dr Anders Blom SynopsysU.S.A.
Dr Davoud Dastan Georgia Tech (Georgia Institute of Technology)U.S.A.
Prof Jean-Pierre Colinge CEA-LETIFRANCE
Dr Niall McEvoy Trinity College DublinIRELAND
Prof Georg S. Düsberg Universität der Bundeswehr MünchenGERMANY
Dr Toby Hallam Newcastle UniversityUNITED KINGDOM
Dr Peter Schüffelgen Forschungszentrum JuelichGERMANY
Dr Thierry Baron CEA-LETIFRANCE

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University College Cork

Coláiste na hOllscoile Corcaigh

College Road, Cork T12 K8AF

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