Research Profile

Raymond Duffy

Biography

Dr. Ray Duffy is a Senior Staff Researcher at Tyndall National Institute, University College Cork. He has a h-index=23 (Scopus), ~150 research papers, ~20 invited presentations in international conferences across the EU, USA, and Asia.

In the past 5 years he has been Principal Investigator (PI), co-PI, or named Collaborator on Science Foundation Ireland, Enterprise Ireland, and EU H2020 projects, such as “Conformal and non-Destructive doping for gate-all-around nanowire devices” (E.I.-IP-2017-0605), “Investigating Emerging 2D Semiconductor Technologies" (SFI 15/IA/3131), “Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices” (SFI 14/IA/2513).

Dr. Duffy has been a major contributor to the EU Horizon2020 ASCENT project (grant agreement 654384) which offers access to research infrastructure and expertise in advanced Nanoelectronics. Based on the successful evaluation of the next phase, ASCENT+, he will be Tyndall’s leader and contact-point for contributions to the Joint Research Activities of the project in 2020-2023.

Specialties: International experience.
Customer oriented research.
Links to academia.
Dissemination of results in journals and conferences.
Mentoring of students.

Researchgate profile : https://www.researchgate.net/profile/Ray_Duffy2
ORCID profile : http://orcid.org/0000-0002-6362-3489
LinkedIn profile : https://ie.linkedin.com/in/rayduffy

Dr. Duffy's activities involve Emerging Materials and Devices for future nanoelectronic, ICT and quantum applications, including fabrication, characterisation and modelling of nanowire devices.

He has been a Symposium Organiser or Technical Program Committee for several international conference spanning areas of modelling, process technology, and novel electron devices.

He was European Material Research Society (E-MRS) Symposium Organiser Spring 2019 “Advances in silicon-nanoelectronics, -nanostructures and high-efficiency Si-photovoltaics”, E-MRS Fall 2017 Symposium “Integration, metrology and Technology CAD co-development for sub-10nm technology nodes”, E-MRS Spring 2015 “Nanomaterials and Processes for Advanced Semiconductor CMOS Devices”.

He was on the Technical Program Committee for the Ion Implantation Technology conference 2012, 2014, 2016, 2018, 2020 (process technology); SISPAD 2018 (modelling), and IEEENANO 2018 (novel electron devices).

Over the past 20 years he has been a technical reviewer for peer-reviewed journals including IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Applied Physics Letters, and Journal of Applied Physics, Langmuir, Journal of Materials Chemistry C, Vacuum, among others.

In this role he has had collaborative research projects or technical engagements with international industrial multinationals and SMEs, including Intel, Applied Materials, Synopsys, Excico, and Lam Research.

He has been PhD viva voce examiner for 9 PhD defences spanning 2010-2020.

He teaches to 4th year undergraduates (BE) and postgraduates (M.Eng.Sc, ME) “Processing of Integrated Circuits” (EE4024/EE4067), and supervises part-time Masters students in the School of Engineering at UCC.

The position also includes
- project management,
- budget management and purchasing,
- PhD student supervision and mentoring,
- dissemination of results in peer-reviewed articles.

Research Grants

 ProjectFunding
Body
Start DateEnd DateAward
Starting Investigator Research GrantScience Foundation of Ireland01-OCT-0931-DEC-15€562,547.00
Passivation and characterisation of germanium nanostructures and devicesIndustry/EI Projects01-APR-1931-MAR-21€77,825.00
Passivation and characterisation of germanium nanostructures and devicesEnterprise Irl01-APR-1931-MAR-21€326,212.00
Two Dimensional Semiconductor Materials For Future MaterialsIrish Research Council02-JAN-1631-JAN-20€96,000.00
EI - CS-2014-1142- Process and Physical Modelling for CMOS Innovation Ray Duffy [X]Enterprise Irl18-NOV-1417-AUG-15€11,900.00
Proposal PreparationEnterprise Irl18-JAN-1317-SEP-13€10,000.00
Conformal and non-destructive doping of high mobility materials - Industry Portion -App. MaterialsIndustry01-NOV-1530-OCT-17€82,112.00
Conformal and non destructive doping towards gate all around nanowire devicesIndustry/EI Projects01-NOV-1728-FEB-20€59,336.00
Conformal and non-destructive doping of high mobility materialsEnterprise Irl01-NOV-1530-OCT-17€111,330.00
Travel SupportEnterprise Irl01-JUN-1101-MAY-18€600.00
Conformal and non destructive doping towards gate all around nanowire devicesEnterprise Irl01-NOV-1729-FEB-20€244,198.00

Publications

Book Chapters

 YearPublication
(2018)'Surface functionalization strategies for monolayer doping'
Holmes, J. D.; O’Connell. J.; Duffy, R.; Long, B. (2018) 'Surface functionalization strategies for monolayer doping' In: Wandelt, K (eds). Encyclopedia of Interfacial Chemistry: Surface Science and Electrochemistry. Amsterdam, Netherlands: Elsevier.   [Details]
(2018)'Surface functionalization strategies for monolayer doping'
Holmes J.;O’Connell J.;Duffy R.;Long B. (2018) 'Surface functionalization strategies for monolayer doping' In: Encyclopedia of Interfacial Chemistry: Surface Science and Electrochemistry. [DOI] [Details]
(2014)'Silicon and germanium junctionless nanowire Transistors for Sensing and Digital Electronics Applications'
Georgiev, Y. M.; Yu, R.; Petkov, N.; Lotty, O.; Nightingale, A.; de Mello, J. C.; Duffy, R.; Holmes, J. D. (2014) 'Silicon and germanium junctionless nanowire Transistors for Sensing and Digital Electronics Applications' In: Nazarov, A.; Balestra, B.; Kilchytska, V.; Flandre, D (eds). Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting Engineering Materials. Switzerland: Springer International Publishing.   [DOI] [Details]
(2014)'Silicon and Germanium Junctionless Nanowire Transistors for Sensing and Digital Electronics Applications'
Georgiev, YM;Yu, R;Petkov, N;Lotty, O;Nightingale, AM;deMello, JC;Duffy, R;Holmes, JD (2014) 'Silicon and Germanium Junctionless Nanowire Transistors for Sensing and Digital Electronics Applications' In: FUNCTIONAL NANOMATERIALS AND DEVICES FOR ELECTRONICS, SENSORS AND ENERGY HARVESTING. BERLIN: SPRINGER-VERLAG BERLIN. [DOI] [Details]

Peer Reviewed Journals

 YearPublication
(2019)'Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation'
Mirabelli G.;Walsh L.;Gity F.;Bhattacharjee S.;Cullen C.;Ó Coileáin C.;Monaghan S.;McEvoy N.;Nagle R.;Hurley P.;Duffy R. (2019) 'Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation'. ACS Omega, 4 (17):17487-17493 [DOI] [Details]
(2019)'Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5nm'
MacHale, John; Meaney, Fintan; Kennedy, Fintan; Eaton, Luke; Mirabelli, Gioele; White, Mary; Thomas, Kevin; Pelucchi, Emanuele; Hjorth Petersen, Dirch; Lin, Rong; Petkov, Nikolay; Connolly, James; Hatem, Chris; Gity, Farzan; Ansari, Lida; Long, Brenda; Duffy, Ray (2019) 'Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5nm'. Journal of Applied Physics, 125   [DOI] [Full Text] [Details]
(2019)'Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08'
Galluccio, E.; Petkov, N.; Mirabelli, G.; Doherty, J.; Lin, S.-Y.; Lu, F.-L.; Liu, C. W.; Holmes, J. D.; Duffy, R. (2019) 'Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08'. Thin Solid Films, 690 :137568 -1-137568 -7   [DOI] [Full Text] [Details]
(2019)'Monolayer doping of silicon-germanium alloys: A balancing act between phosphorus incorporation and strain relaxation'
Kennedy N.;Duffy R.;Mirabelli G.;Eaton L.;Petkov N.;Holmes J.;Hatem C.;Walsh L.;Long B. (2019) 'Monolayer doping of silicon-germanium alloys: A balancing act between phosphorus incorporation and strain relaxation'. Journal of Applied Physics, 126 (2) [DOI] [Full Text] [Details]
(2019)'Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation'
Mirabelli, G;Walsh, LA;Gity, F;Bhattacharjee, S;Cullen, CP;Coileain, CO;Monaghan, S;McEyoy, N;Nagle, R;Hurley, PK;Duffy, R (2019) 'Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation'. ACS Omega, 4 :17487-17493 [DOI] [Details]
(2019)'Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 degrees C'
Ansari, L;Monaghan, S;McEvoy, N;Coileain, CO;Cullen, CP;Lin, J;Siris, R;Stimpel-Lindner, T;Burke, KF;Mirabelli, G;Duffy, R;Caruso, E;Nagle, RE;Duesberg, GS;Hurley, PK;Gity, F (2019) 'Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 degrees C'. Npj 2d Materials And Applications, 3 [DOI] [Details]
(2019)'Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C'
Ansari L.;Monaghan S.;McEvoy N.;Coileáin C.;Cullen C.;Lin J.;Siris R.;Stimpel-Lindner T.;Burke K.;Mirabelli G.;Duffy R.;Caruso E.;Nagle R.;Duesberg G.;Hurley P.;Gity F. (2019) 'Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C'. Npj 2d Materials And Applications, 3 (1) [DOI] [Details]
(2018)'Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation'
Duffy, R.; Ricchio, A.; Murphy, R.; Maxwell, G.; Murphy, R.; Piaszenski, G.; Petkov, N.; Hydes, A.; O'Connell, D.; Lyons, C.; Kennedy, N.; Sheehan, B.; Schmidt, M.; Crupi, F.; Holmes, J. D.; Hurley, P. K.; Connolly, J.; Hatem, C.; Long, B. (2018) 'Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation'. Journal of Applied Physics, 123 (12):125701(1)-125701(13)   [DOI] [Full Text] [Details]
(2018)'Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium'
Boninelli, S;Milazzo, R;Carles, R;Houdellier, F;Duffy, R;Huet, K;La Magna, A;Napolitani, E;Cristiano, F (2018) 'Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium'. Apl Materials, 6 [DOI] [Details]
(2018)'AsH3 gas-phase ex situ doping 3D silicon structures'
Duffy, R.; Thomas, K.; Galluccio, E.; Mirabelli, G. Sultan, M.; Kennedy, N. Petkov, N. Maxwell, G.; Hydes, A.; O’Connell, D.; Lyons, C.; Sheehan, B.; Schmidt, M. Holmes, J. D.; Hurley, P. K.; Pelucchi, E. Connolly, J.; Hatem, C.; Long, B. (2018) 'AsH3 gas-phase ex situ doping 3D silicon structures'. Journal of Applied Physics, 124 (4):045703(1)-045703(8)   [DOI] [Full Text] [Details]
(2018)'Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates'
Kennedy, N.; Duffy, R.; Eaton, L.; O’Connell, D.; Monaghan, S.; Garvey, S.; Connolly, J.; Hatem, C.; Holmes, J. D.; Long, B. (2018) 'Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates'. Beilstein Journal of Nanotechnology, 9 :2106-2113   [DOI] [Full Text] [Details]
(2018)'Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation'
Duffy, R.; Ricchio, A.; Murphy, R.; Maxwell, G.; Murphy, R.; Piaszenski, G.; Petkov, N.; Hydes, A.; O'Connell, D.; Lyons, C.; Kennedy, N.; Sheehan, B.; Schmidt, M.; Crupi, F.; Holmes, J. D.; Hurley, P. K.; Connolly, J.; Hatem, C.; Long, B. (2018) 'Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation'. Journal of Applied Physics, 123 (12):125701(1)-125701(13)   [DOI] [Details]
(2017)'Liquid-Phase Monolayer Doping of InGaAs with Si-, S- and Sn-Containing Organic Molecular Layers'
O'Connell, J., Napolitani, E., Impellizzeri, G., Glynn, C., McGlacken, G., O'Dwyer, C., Duffy, R. & Holmes, J. D. (2017) 'Liquid-Phase Monolayer Doping of InGaAs with Si-, S- and Sn-Containing Organic Molecular Layers'. ACS Omega, 2 :1750-1759   [DOI] [Full Text] [Details]
(2017)'Doping top-down e-beam fabricated germanium nanowires using molecular monolayers'
Long, B.; Alessio Verni, G.; O’Connell, J.; Shayesteh, M.; Gangnaik, A.; Georgiev, Y. M.; Carolan, P.; O’Connell, D.; Kuhn, K. J.; Clendenning, S. B.; Nagle, R.; Duffy, R.; Holmes, J. D. (2017) 'Doping top-down e-beam fabricated germanium nanowires using molecular monolayers'. Materials Science In Semiconductor Processing, 62 :196-200   [DOI] [Full Text] [Details]
(2017)'Modelling doping design in nanowire tunnel-FETs based on group-IV semiconductors'
Settino, F.; Crupi, F.; Biswas, S.; Holmes, J. D.; Duffy, R. (2017) 'Modelling doping design in nanowire tunnel-FETs based on group-IV semiconductors'. Materials Science In Semiconductor Processing, 62 :201-206   [DOI] [Details]
(2017)'Enhanced recrystallization and dopant activation of P+ ion-implanted super-thin Ge layers by RF hydrogen plasma treatment'
Alexei N. Nazarov,Volodymyr O. Yukhymchuk,Yurii V. Gomeniuk,Sergiy B. Kryvyi,Pavel N. Okholin,Petro M. Lytvyn,Vasyl P. Kladko,Volodymyr S. Lysenko,Volodymyr I. Glotov,Illya E. Golentus,Enrico Napolitani,Ray Duffy (2017) 'Enhanced recrystallization and dopant activation of P+ ion-implanted super-thin Ge layers by RF hydrogen plasma treatment'. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 35 (5)   [DOI] [Details]
(2017)'Liquid-phase monolayer doping of InGaAs with Si-, S- and Sn-containing organic molecular layers'
O’Connell, J.; Napolitani, E.; Impellizzeri, G.; Glynn, C.; McGlacken, G. P.; O’Dwyer, C.; Duffy, R.; Holmes, J. D. (2017) 'Liquid-phase monolayer doping of InGaAs with Si-, S- and Sn-containing organic molecular layers'. ACS Omega, 2 (5):1750-1759   [DOI] [Full Text] [Details]
(2016)'Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2'
Mirabelli, G;McGeough, C;Schmidt, M;McCarthy, EK;Monaghan, S;Povey, IM;McCarthy, M;Gity, F;Nagle, R;Hughes, G;Cafolla, A;Hurley, PK;Duffy, R (2016) 'Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2'. Journal of Applied Physics, 120 [DOI] [Details]
(2016)'Monolayer doping of Si with improved oxidation resistance'
O’Connell, J.; Collins, G.; McGlacken, G. P.; Duffy, R.; Holmes, J. D. (2016) 'Monolayer doping of Si with improved oxidation resistance'. ACS applied materials & interfaces, 8 (6):4101-4108   [DOI] [Full Text] [Details]
(2016)'Back-gated Nb-doped MoS2 junctionless field-effect-transistors'
Mirabelli, G,Schmidt, M,Sheehan, B,Cherkaoui, K,Monaghan, S,Povey, I,McCarthy, M,Bell, AP,Nagle, R,Crupi, F,Hurley, PK,Duffy, R (2016) 'Back-gated Nb-doped MoS2 junctionless field-effect-transistors'. AIP Advances, 6 [DOI] [Details]
(2016)'Structural and Electrical Investigation of MoS2 Thin Films Formed by Thermal Assisted Conversion of Mo Metal'
Duffy, Ray; Foley, Patrick; Filippone, Bruno; Mirabelli, Gioele; O'Connell, Dan; Sheehan, Brendan; Carolan, Pat; Schmidt, Michael; Cherkaoui, Karim; Gatensby, Riley; Hallam, Toby; Duesberg, Georg; Crupi, Felice; Nagle, Roger; Hurley, Paul K. (2016) 'Structural and Electrical Investigation of MoS2 Thin Films Formed by Thermal Assisted Conversion of Mo Metal'. ECS Journal of Solid State Science and Technology, 5 (11):Q3016-Q3020 [DOI] [Full Text] [Details]
(2016)'Electrical Characterization of the Influence of the Annealing Energy Density on Carrier Lifetimes in Germanium'
Filippone, B;Donaldson, C;Shayesteh, M;O'Connell, D;Huet, K;Toque-Tresonne, I;Crupi, F;Duffy, R (2016) 'Electrical Characterization of the Influence of the Annealing Energy Density on Carrier Lifetimes in Germanium'. ECS Journal of Solid State Science and Technology, 5 :3013-3017 [DOI] [Details]
(2016)'Chemical Approaches for Doping Nanodevice Architectures'
O’Connell, J.; Biswas, S.; Duffy, R.; Holmes, J. D. (2016) 'Chemical Approaches for Doping Nanodevice Architectures'. Nanotechnology, 27 (34):342002(1)-342002(19)   [DOI] [Full Text] [Details]
(2016)'Defect evolution and dopant activation in laser annealed Si and Ge'
Cristiano, F;Shayesteh, M;Duffy, R;Huet, K;Mazzamuto, F;Qiu, Y;Quillec, M;Henrichsen, HH;Nielsen, PF;Petersen, DH;La Magna, A;Caruso, G;Boninelli, S (2016) 'Defect evolution and dopant activation in laser annealed Si and Ge'. Materials Science In Semiconductor Processing, 42 :188-195 [DOI] [Details]
(2016)'RF plasma treatment of shallow ion-implanted layers of germanium'
Okholin, R;Glotov, VI;Nazarov, AN;Yuchymchuk, VO;Kladko, VP;Kryvyi, SB;Lytvyn, PM;Tiagulskyi, SI;Lysenko, VS;Shayesteh, M;Duffy, R (2016) 'RF plasma treatment of shallow ion-implanted layers of germanium'. Materials Science In Semiconductor Processing, 42 :204-209 [DOI] [Details]
(2016)'Monolayer Doping of Si with Improved Oxidation Resistance'
O'Connell, J;Collins, G;McGlacken, GP;Duffy, R;Holmes, JD (2016) 'Monolayer Doping of Si with Improved Oxidation Resistance'. Acs Applied Materials & Interfaces, 8 :4101-4108 [DOI] [Details]
(2015)'Organo-arsenic molecular layers on silicon for high density doping'
O’Connell, J.; Alessio Verni, G.; Gangnaik, A.; Shayesteh, M.; Long, B.; Georgiev, Y. M.; Petkov, N.; McGlacken, G. P.; Morris, M. A.; Duffy, R.; Holmes, J. D. (2015) 'Organo-arsenic molecular layers on silicon for high density doping'. Acs Applied Materials & Interfaces, 7 (28):15514-15521   [DOI] [Full Text] [Details]
(2015)'How Target Physical Properties Affect Thin-Body Semiconductor Doping When Using Energetic Ions: A Modeling-Based Analysis'
Shayesteh, M;Duffy, R (2015) 'How Target Physical Properties Affect Thin-Body Semiconductor Doping When Using Energetic Ions: A Modeling-Based Analysis'. IEEE Transactions on Semiconductor Manufacturing, 28 :508-514 [DOI] [Details]
(2014)'Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion'
Duffy, R.; Shayesteh, M.; Thomas, K.; Pelucchi, E.; Yu, R.; Gangnaik, A.; Georgiev, Y. M.; Carolan, P.; Petkov, N.; Long, B. Holmes, J. D. (2014) 'Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion'. Journal of Materials Chemistry C, 2 (43):9248-9257   [DOI] [Details]
(2014)'Characterisation of electrically active defects'
Duffy R.;Heringa A. (2014) 'Characterisation of electrically active defects'. Physica Status Solidi C - Current Topics In Solid State Physics, 11 (1):130-137 [DOI] [Details]
(2014)'Laser thermal anneal formation of atomically-flat low-resistive germanide contacts'
Huet K.;Shayesteh M.;Toqué-Tresonne I.;Negru R.;Daunt C.;Kelly N.;O'Connell D.;Yu R.;Djara V.;Carolan P.;Petkov N.;Duffy R. (2014) 'Laser thermal anneal formation of atomically-flat low-resistive germanide contacts'. Physica Status Solidi C - Current Topics In Solid State Physics, 11 (1):169-173 [DOI] [Details]
(2014)'Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current'
Shayesteh, M,O' Connell, D,Gity, F,Murphy-Armando, P,Yu, R,Huet, K,Toque-Tresonne, I,Cristiano, F,Boninelli, S,Henrichsen, HH,Nielsen, PF,Petersen, DH,Duffy, R (2014) 'Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current'. IEEE Transactions On Electron Devices, 61 :4047-4055 [DOI] [Details]
(2014)'Silicon and Germanium Junctionless Nanowire Transistors for Sensing and Digital Electronics Applications'
Georgiev, YM,Yu, R,Petkov, N,Lotty, O,Nightingale, AM,deMello, JC,Duffy, R,Holmes, JD,Nazarov, A,Balestra, F,Kilchytska V,Flandre, D (2014) 'Silicon and Germanium Junctionless Nanowire Transistors for Sensing and Digital Electronics Applications'. Semiconductor-On-Insulator Materials For Nanoelectronics Applications, :367-388 [DOI] [Details]
(2013)'Impact ionization induced dynamic floating body effect in junctionless transistors'
Yu, R., Nazarov, A.N., Lysenko, V.S., Das, S., Ferain, I., Razavi, P., Shayesteh, M., Kranti, A., Duffy, R., Colinge, J.-P. (2013) 'Impact ionization induced dynamic floating body effect in junctionless transistors'. Solid-State Electronics, 90 :28-33   [Details]
(2013)'Atomically flat low-resistive germanide contacts formed by laser thermal anneal'
Shayesteh, Maryam; Huet, Karim; Toqué-Tresonne, Inès; Negru, Razvan; Daunt, Chris L. M.; Kelly, Niall; O’Connell, Dan; Yu, Ran; Djara, Vladimir; Carolan, Patrick B.; Petkov, Nikolay; Duffy, Ray (2013) 'Atomically flat low-resistive germanide contacts formed by laser thermal anneal'. IEEE Transactions On Electron Devices, 60 (7):2178-2185   [DOI] [Full Text] [Details]
(2013)'Impact ionization induced dynamic floating body effect in junctionless transistors'
Yu, R,Nazarov, AN,Lysenko, VS,Das, S,Ferain, I,Razavi, P,Shayesteh, M,Kranti, A,Duffy, R,Colinge, JP (2013) 'Impact ionization induced dynamic floating body effect in junctionless transistors'. Solid-State Electronics, 90 :28-33 [DOI] [Details]
(2012)'Molecular dynamics simulation of the regrowth of nanometric multigate Si devices'
Marques, LA;Pelaz, L;Santos, I;Lopez, P;Duffy, R (2012) 'Molecular dynamics simulation of the regrowth of nanometric multigate Si devices'. Journal of Applied Physics, 111 [DOI] [Details]
(2012)'Device design and estimated performance for p-type junctionless transistors on bulk germanium substrates'
Yu, R., Das, S., Ferain, I., Razavi, P., Shayesteh, M., Kranti, A., Duffy, R., Colinge, J.-P. (2012) 'Device design and estimated performance for p-type junctionless transistors on bulk germanium substrates'. IEEE Transactions on Electron Devices, 59 (9):2308-2313   [Details]
(2012)'Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates'
Yu, R;Das, S;Ferain, I;Razavi, P;Shayesteh, M;Kranti, A;Duffy, R;Colinge, JP (2012) 'Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates'. IEEE Transactions On Electron Devices, 59 :2308-2313 [DOI] [Details]
(2011)'Characterization of a junctionless diode'
Yu, R;Ferain, I;Akhavan, ND;Razavi, P;Duffy, R;Colinge, JP (2011) 'Characterization of a junctionless diode'. Applied Physics Letters, 99 [DOI] [Details]
(2011)'The curious case of thin-body Ge crystallization'
Duffy, R;Shayesteh, M;McCarthy, B;Blake, A;White, M;Scully, J;Yu, R;Kelleher, AM;Schmidt, M;Petkov, N;Pelaz, L;Marques, LA (2011) 'The curious case of thin-body Ge crystallization'. Applied Physics Letters, 99 [DOI] [Details]
(2011)'Characterization of a junctionless diode'
Yu, R., Ferain, I., Akhavan, N.D., Razavi, P., Duffy, R., Colinge, J.-P. (2011) 'Characterization of a junctionless diode'. Applied Physics Letters, 99 (1)   [Details]
(2011)'NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices'
Shayesteh, M;Daunt, CLM;O'Connell, D;Djara, V;White, M;Long, B;Duffy, R (2011) 'NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices'. IEEE Transactions On Electron Devices, 58 :3801-3807 [DOI] [Details]
(2010)'The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization'
Duffy, R;Shayesteh, M;White, M;Kearney, J;Kelleher, AM (2010) 'The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization'. Applied Physics Letters, 96 [DOI] [Details]
(2003)'A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications'
Mc Carthy, D;Duane, R;O'Shea, M;Duffy, R;Mc Carthy, K;Kelliher, AM;Concannon, A;Mathewson, A (2003) 'A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications'. IEEE Transactions On Electron Devices, 50 :1708-1711 [DOI] [Details]
(2001)'Scaling embedded EEPROMs for the integration in deep submicron technologies'
Duffy, R;Concannon, A;Mathewson, A;Lane, B (2001) 'Scaling embedded EEPROMs for the integration in deep submicron technologies'. Microelectronics Journal, 32 :35-42 [Details]
(1999)'Analysis of external latch-up protection test structure design using numerical simulation'
Palser, K;Concannon, A;Duffy, R;Mathewson, A (1999) 'Analysis of external latch-up protection test structure design using numerical simulation'. Microelectronics Reliability, 39 :647-659 [Details]
(2003)'¿A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications¿'
7. McCarthy, D., Duane, R., O¿Shea, M., Duffy, R., McCarthy, K.G., Kelleher, A.M., Concannon, A., Mathewson, A; (2003) '¿A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications¿'. IEEE Transactions on Electron Devices, 50 (7):1708-1710 [Details]
(2014)'Junctionless nanowire Transistor fabricated with high mobility Ge channel'
Yu, R.; Georgiev, Y. M.; Das, S.; Hobbs, R. G.; Povey, I. M.; Petkov, N.; Shayesteh, M.; O’Connell, D.; Holmes, J. D.; Duffy, R. (2014) 'Junctionless nanowire Transistor fabricated with high mobility Ge channel'. Physica Status Solidi-Rapid Research Letters, 8 (1):65-68   [DOI] [Details]
(2011)'NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices'
Shayesteh, M,Daunt, CLM,O'Connell, D,Djara, V,White, M,Long, B,Duffy, R (2011) 'NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices'. IEEE Transactions On Electron Devices, 58 :3801-3807 [DOI] [Details]
(2001)'Scaling embedded EEPROMs for the integration in deep submicron technologies'
Duffy, R,Concannon, A,Mathewson, A,Lane, B; (2001) 'Scaling embedded EEPROMs for the integration in deep submicron technologies'. Rna-A Publication of The Rna Society, 32 :35-42 [Details]
(0)'Advanced Process Development Using Numerical Simulation [B2746]'
Duffy, R.; Concannon, A.; Mathewson, A.; (0) 'Advanced Process Development Using Numerical Simulation [B2746]'. Iee Colloquium (Digest), 0.033 :14-01/14/06 [Details]
(2012)'Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates'
Yu, R,Das, S,Ferain, I,Razavi, P,Shayesteh, M,Kranti, A,Duffy, R,Colinge, JP (2012) 'Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates'. IEEE Transactions On Electron Devices, 59 :2308-2313 [DOI] [Details]
(2012)'Molecular dynamics simulation of the regrowth of nanometric multigate Si devices'
Marques, LA,Pelaz, L,Santos, I,Lopez, P,Duffy, R (2012) 'Molecular dynamics simulation of the regrowth of nanometric multigate Si devices'. Journal of Applied Physics, 111 [DOI] [Details]
(2011)'The curious case of thin-body Ge crystallization'
Duffy, R,Shayesteh, M,McCarthy, B,Blake, A,White, M,Scully, J,Yu, R,Kelleher, AM,Schmidt, M,Petkov, N,Pelaz, L,Marques, LA (2011) 'The curious case of thin-body Ge crystallization'. Applied Physics Letters, 99 [DOI] [Details]
(2011)'Characterization of a junctionless diode'
Yu, R,Ferain, I,Akhavan, ND,Razavi, P,Duffy, R,Colinge, JP; (2011) 'Characterization of a junctionless diode'. Applied Physics Letters, 99 [DOI] [Details]
(2010)'The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization'
Duffy, R,Shayesteh, M,White, M,Kearney, J,Kelleher, AM; (2010) 'The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization'. Applied Physics Letters, 96 [DOI] [Details]
(2014)'Junctionless nanowire transistor fabricated with high mobility Ge channel'
Yu, R., Georgiev, Y.M., Das, S., Hobbs, R.G., Povey, I.M., Petkov, N., Shayesteh, M., O'Connell, D., Holmes, J.D., Duffy, R. (2014) 'Junctionless nanowire transistor fabricated with high mobility Ge channel'. Physica Status Solidi - Rapid Research Letters, 8 (1):65-68   [Details]
(2014)'Junctionless nanowire transistor fabricated with high mobility Ge channel'
Yu, R,Georgiev, YM,Das, S,Hobbs, RG,Povey, IM,Petkov, N,Shayesteh, M,O'Connell, D,Holmes, JD,Duffy, R (2014) 'Junctionless nanowire transistor fabricated with high mobility Ge channel'. Physica Status Solidi-Rapid Research Letters, 8 :65-68 [DOI] [Details]
(2003)'A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications'
Mc Carthy, D., Duane, R., O'Shea, M., Duffy, R., Mc Carthy, K., Kelliher, A.-M., Concannon, A., Mathewson, A. (2003) 'A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications'. IEEE Transactions On Electron Devices, 50 (7):1708-1711   [Details]
(2014)'Characterisation of electrically active defects'
Duffy, R., Heringa, A. (2014) 'Characterisation of electrically active defects'. Physica Status Solidi (C) Current Topics in Solid State Physics, 11 (1):130-137   [Details]
(2014)'Laser thermal anneal formation of atomically-flat low-resistive germanide contacts'
Huet, K., Shayesteh, M., Toqué-Tresonne, I., Negru, R., Daunt, C.L.M., Kelly, N., O'Connell, D., Yu, R., Djara, V., Carolan, P., Petkov, N., Duffy, R. (2014) 'Laser thermal anneal formation of atomically-flat low-resistive germanide contacts'. Physica Status Solidi (C) Current Topics in Solid State Physics, 11 (1):169-173   [Details]

Other Journals

 YearPublication
(2018)'Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation'
Duffy, R. and Ricchio, A. and Murphy, R. and Maxwell, G. and Murphy, R. and Piaszenski, G. and Petkov, N. and Hydes, A. and O'Connell, D. and Lyons, C. and Kennedy, N. and Sheehan, B. and Schmidt, M. and Crupi, F. and Holmes, J.D. and Hurley, P.K. and Connolly, J. and Hatem, C. and Long, B. (2018) 'Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation' Journal of Applied Physics, 123 (12) .   [DOI] [Details]
(2018)'AsH 3 gas-phase ex situ doping 3D silicon structures'
Duffy, R. and Thomas, K. and Galluccio, E. and Mirabelli, G. and Sultan, M. and Kennedy, N. and Petkov, N. and Maxwell, G. and Hydes, A. and O'Connell, D. and Lyons, C. and Sheehan, B. and Schmidt, M. and Holmes, J.D. and Hurley, P.K. and Pelucchi, E. and Connolly, J. and Hatem, C. and Long, B. (2018) 'AsH 3 gas-phase ex situ doping 3D silicon structures' Journal of Applied Physics, 124 (4) .   [DOI] [Details]
(2016)'Back-gated Nb-doped MoS2 junctionless field-effect-transistors'
Mirabelli, G. and Schmidt, M. and Sheehan, B. and Cherkaoui, K. and Monaghan, S. and Povey, I. and McCarthy, M. and Bell, A.P. and Nagle, R. and Crupi, F. and Hurley, P.K. and Duffy, R. (2016) 'Back-gated Nb-doped MoS2 junctionless field-effect-transistors' AIP Advances, 6 (2) .   [DOI] [Details]
(2003)'Boron uphill diffusion during ultrashallow junction formation'
Duffy, R., Venezia, V.C., Heringa, A., Hüsken, T.W.T., Hopstaken, M.J.P., Cowern, N.E.B., Griffin, P.B., Wang, C.C. (2003) 'Boron uphill diffusion during ultrashallow junction formation' Applied Physics Letters, 82 (21) :3647-3649.   [Details]
(1999)'SPECIAL SECTION: EU RESEARCH PROJECT PROPHECY PAPERS-Analysis of external latch-up protection test structure design using numerical simulation'
Palser, K and Concannon, A and Duffy, R and Mathewson, A (1999) 'SPECIAL SECTION: EU RESEARCH PROJECT PROPHECY PAPERS-Analysis of external latch-up protection test structure design using numerical simulation' Microelectronics Reliability, 39 (5) :647-660. [Details]
(1999)'Analysis of external latch-up protection test structure design using numerical simulation'
Palser, K., Concannon, A., Duffy, R., Mathewson, A. (1999) 'Analysis of external latch-up protection test structure design using numerical simulation' Microelectronics Reliability, 39 (5) :647-659.   [Details]
(2012)'Molecular dynamics simulation of the regrowth of nanometric multigate Si devices'
Marqués, L.A., Pelaz, L., Santos, I., López, P., Duffy, R. (2012) 'Molecular dynamics simulation of the regrowth of nanometric multigate Si devices' Journal of Applied Physics, 111 (3) .   [Details]
(2011)'NiGe contacts and junction architectures for P and As doped germanium devices'
Shayesteh, M., Daunt, C.L.L.M., O'Connell, D., Djara, V., White, M., Long, B., Duffy, R. (2011) 'NiGe contacts and junction architectures for P and As doped germanium devices' IEEE Transactions on Electron Devices, 58 (11) :3801-3807.   [Details]
(2011)'The curious case of thin-body Ge crystallization'
Duffy, R., Shayesteh, M., McCarthy, B., Blake, A., White, M., Scully, J., Yu, R., Kelleher, A.-M., Schmidt, M., Petkov, N., Pelaz, L., Marqués, L.A. (2011) 'The curious case of thin-body Ge crystallization' Applied Physics Letters, 99 (13) .   [Details]
(2010)'The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization'
Duffy, R., Shayesteh, M., White, M., Kearney, J., Kelleher, A.-M. (2010) 'The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization' Applied Physics Letters, 96 (23) .   [Details]
(2010)'Erratum: Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2010) 28 (C1H5))'
Mody, J., Duffy, R., Eyben, P., Goossens, J., Moussa, A., Polspoel, W., Berghmans, B., Van Dal, M.J.H., Pawlak, B.J., Kaiser, M., Weemaes, R.G.R., Vandervorst, W. (2010) 'Erratum: Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2010) 28 (C1H5))' Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 28 (3) .   [Details]
(2010)'Quantitative prediction of junction leakage in bulk-technology CMOS devices'
Duffy, R., Heringa, A., Venezia, V.C., Loo, J., Verheijen, M.A., Hopstaken, M.J.P., van der Tak, K., de Potter, M., Hooker, J.C., Meunier-Beillard, P., Delhougne, R. (2010) 'Quantitative prediction of junction leakage in bulk-technology CMOS devices' Solid-State Electronics, 54 (3) :243-251.   [Details]
(2009)'Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering'
Ferain, I., Duffy, R., Collaert, N., van Dal, M.J.H., Pawlak, B.J., O'Sullivan, B., Witters, L., Rooyackers, R., Conard, T., Popovici, M., van Elshocht, S., Kaiser, M., Weemaes, R.G.R., Swerts, J., Jurczak, M., Lander, R.J.P., De Meyer, K. (2009) 'Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering' Solid-State Electronics, 53 (7) :760-766.   [Details]
(2008)'Extended defects evolution in pre-amorphlsed silicon after millisecond flash anneals'
Cristiano, F., Bazizi, E.M., Fazzini, P.F., Boninelli, S., Duffy, R., Pakfar, A., Paul, S., Lerch, W. (2008) 'Extended defects evolution in pre-amorphlsed silicon after millisecond flash anneals' Materials Science Forum, 573-574 :269-277.   [Details]
(2008)'Doping strategies for FinFETs'
Pawlak, B.J., Duffy, R., De Keersgieter, A. (2008) 'Doping strategies for FinFETs' Materials Science Forum, 573-574 :333-338.   [Details]
(2008)'Si interstitial contribution of F+ implants in crystalline Si'
López, P., Pelaz, L., Duffy, R., Meunier-Beillard, P., Roozeboom, F., Van Der Tak, K., Breimer, P., Van Berkum, J.G.M., Verheijen, M.A., Kaiser, M. (2008) 'Si interstitial contribution of F+ implants in crystalline Si' Journal of Applied Physics, 103 (9) .   [Details]
(2008)'Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance'
Duffy, R., Curatola, G., Pawlak, B.J., Doornbos, G., Van Der Tak, K., Breimer, P., Van Berkum, J.G.M., Roozeboom, F. (2008) 'Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance' Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26 (1) :402-407.   [Details]
(2008)'Evolution of fluorine and boron profiles during annealing in crystalline Si'
López, P., Pelaz, L., Duffy, R., Meunier-Beillard, P., Roozeboom, F., Van Der Tak, K., Breimer, P., Van Berkum, J.G.M., Verheijen, M.A., Kaiser, M. (2008) 'Evolution of fluorine and boron profiles during annealing in crystalline Si' Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26 (1) :377-381.   [Details]
(2008)'Probing doping conformality in fin shaped field effect transistor structures using resistors'
Vandervorst, W., Jurczak, M., Everaert, J.-L., Pawlak, B.J., Duffy, R., Del-Agua-Bomiquel, J.-I., Poon, T. (2008) 'Probing doping conformality in fin shaped field effect transistor structures using resistors' Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26 (1) :396-401.   [Details]
(2008)'Deep level transient spectroscopy of ultra shallow junctions in Si formed by implantation'
Mitromara, N., Evans-Freeman, J.H., Duffy, R. (2008) 'Deep level transient spectroscopy of ultra shallow junctions in Si formed by implantation' Solid State Phenomena, 131-133 :497-502.   [Details]
(2007)'Solid phase epitaxy versus random nucleation and growth in sub- 20 nm wide fin field-effect transistors'
Duffy, R., Van Dal, M.J.H., Pawlak, B.J., Kaiser, M., Weemaes, R.G.R., Degroote, B., Kunnen, E., Altamirano, E. (2007) 'Solid phase epitaxy versus random nucleation and growth in sub- 20 nm wide fin field-effect transistors' Applied Physics Letters, 90 (24) .   [Details]
(2006)'Groups III and v impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals'
Duffy, R., Dao, T., Tamminga, Y., Van Der Tak, K., Roozeboom, F., Augendre, E. (2006) 'Groups III and v impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals' Applied Physics Letters, 89 (7) .   [Details]
(2006)'Suppression of phosphorus diffusion by carbon co-implantation'
Pawlak, B.J., Duffy, R., Janssens, T., Vandervorst, W., Felch, S.B., Collart, E.J.H., Cowern, N.E.B. (2006) 'Suppression of phosphorus diffusion by carbon co-implantation' Applied Physics Letters, 89 (6) .   [Details]
(2006)'Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth'
Aboy, M., Pelaz, L., López, P., Marqús, L.A., Duffy, R., Venezia, V.C. (2006) 'Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth' Applied Physics Letters, 88 (19) .   [Details]
(2006)'Diffusion, activation, and regrowth behavior of high dose P implants in Ge'
Satta, A., Simoen, E., Duffy, R., Janssens, T., Clarysse, T., Benedetti, A., Meuris, M., Vandervorst, W. (2006) 'Diffusion, activation, and regrowth behavior of high dose P implants in Ge' Applied Physics Letters, 88 (16) .   [Details]
(2006)'Boron pocket and channel deactivation in nMOS transistors with SPER junctions'
Duffy, R., Aboy, M., Venezia, V.C., Pelaz, L., Severi, S., Pawlak, B.J., Eyben, P., Janssens, T., Vandervorst, W., Loo, J., Roozeboom, F. (2006) 'Boron pocket and channel deactivation in nMOS transistors with SPER junctions' IEEE Transactions on Electron Devices, 53 (1) :71-76.   [Details]
(2005)'Boron diffusion in amorphous silicon'
Venezia, V.C., Duffy, R., Pelaz, L., Hopstaken, M.J.P., Maas, G.C.J., Dao, T., Tamminga, Y., Graat, P. (2005) 'Boron diffusion in amorphous silicon' Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 124-125 (SUPPL) :245-248.   [Details]
(2005)'Boron diffusion in strained and strain-relaxed SiGe'
Wang, C.C., Sheu, Y.M., Liu, S., Duffy, R., Heringa, A., Cowern, N.E.B., Griffin, P.B. (2005) 'Boron diffusion in strained and strain-relaxed SiGe' Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 124-125 (SUPPL) :39-44.   [Details]
(2005)'Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth'
Aboy, M., Pelaz, L., Barbolla, J., Duffy, R., Venezia, V.C. (2005) 'Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth' Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 124-125 (SUPPL) :205-209.   [Details]
(2005)'E-MRS 2005/Symposium D: Materials science and device issues for future Si-based technologies'
Pelaz, L., Duffy, R., Cristiano, F., Colombeau, B., Uppal, S. (2005) 'E-MRS 2005/Symposium D: Materials science and device issues for future Si-based technologies' Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 124-125 (SUPPL) :1-2.   [Details]
(2005)'Impurity redistribution due to recrystallization of preamorphized silicon'
Duffy, R., Venezia, V.C., Van Der Tak, K., Hopstaken, M.J.P., Maas, G.C.J., Roozeboom, F., Tamminga, Y., Dao, T. (2005) 'Impurity redistribution due to recrystallization of preamorphized silicon' Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23 (5) :2021-2029.   [Details]
(2005)'Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth'
Pawlak, B.J., Duffy, R., Janssens, T., Vandervorst, W., Maex, K., Smith, A.J., Cowern, N.E.B., Dao, T., Tamminga, Y. (2005) 'Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth' Applied Physics Letters, 87 (3) .   [Details]
(2005)'Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon'
Aboy, M., Pelaz, L., Marqús, L.A., López, P., Barbolla, J., Duffy, R. (2005) 'Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon' Journal of Applied Physics, 97 (10) .   [Details]
(2005)'Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface'
Duffy, R., Venezia, V.C., Loo, J., Hopstaken, M.J.P., Verheijen, M.A., Van Berkum, J.G.M., Maas, G.C.J., Tamminga, Y., Dao, T., Demeurisse, C. (2005) 'Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface' Applied Physics Letters, 86 (8) :1-3.   [Details]
(2005)'Role of silicon interstitials in boron cluster dissolution'
Aboy, M., Pelaz, L., Marqús, L.A., López, P., Barbolla, J., Duffy, R., Venezia, V.C., Griffin, P.B. (2005) 'Role of silicon interstitials in boron cluster dissolution' Applied Physics Letters, 86 (3) :1-3.   [Details]
(2004)'The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles'
Aboy, M., Pelaz, L., Marqués, L.A., Löpez, P., Barbolla, J., Venezia, V.C., Duffy, R., Griffin, P.B. (2004) 'The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles' Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 114-115 (SPEC. ISS) :193-197.   [Details]
(2004)'Effects of crystalline regrowth on dopant profiles in preamorphized silicon'
Hopstaken, M.J.P., Tamminga, Y., Verheijen, M.A., Duffy, R., Venezia, V.C., Heringa, A. (2004) 'Effects of crystalline regrowth on dopant profiles in preamorphized silicon' Applied Surface Science, 231-232 :688-692.   [Details]
(2004)'Boron diffusion in amorphous silicon and the role of fluorine'
Duffy, R., Venezia, V.C., Heringa, A., Pawlak, B.J., Hopstaken, M.J.P., Maas, G.C.J., Tamminga, Y., Dao, T., Roozeboom, F., Pelaz, L. (2004) 'Boron diffusion in amorphous silicon and the role of fluorine' Applied Physics Letters, 84 (21) :4283-4285.   [Details]
(2004)'Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon'
Duffy, R., Venezia, V.C., Heringa, A., Pawlak, B.J., Hopstaken, M.J.P., Tamminga, Y., Dao, T., Roozeboom, F., Wang, C.C., Diaz, C.H., Griffin, P.B. (2004) 'Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon' Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22 (3) :865-868.   [Details]
(2004)'Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth'
Pawlak, B.J., Lindsay, R., Susdeanu, R., Dieu, B., Geenen, L., Hoflijk, I., Richard, O., Duffy, R., Clarysse, T., Brijs, B., Vandervorst, W., Dachs, C.J.J. (2004) 'Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth' Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22 (1) :297-301.   [Details]
(2004)'Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth'
Lindsay, R., Henson, K., Vandervorst, W., Maex, K., Pawlak, B.J., Duffy, R., Surdeanu, R., Stolk, P., Kittl, J.A., Giangrandi, S., Pages, X., Van der Jeugd, K. (2004) 'Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth' Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22 (1) :306-311.   [Details]
(2001)'Scaling embedded EEPROMs for the integration in deepsubmicron technologies'
Duffy, R and Concannon, A and Mathewson, A and Lane, B (2001) 'Scaling embedded EEPROMs for the integration in deepsubmicron technologies' Microelectronics journal, 32 (1) :35-42. [Details]
(2001)'Scaling embedded EEPROMs for the integration in deep submicron technologies'
Duffy, R., Concannon, A., Mathewson, A., Lane, B. (2001) 'Scaling embedded EEPROMs for the integration in deep submicron technologies' Microelectronics Journal, 32 (1) :35-42.   [Details]

Conference Publications

 YearPublication
(2018)2018 18TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)
Duffy, R;Kennedy, N;Mirabelli, G;Galluccio, E;Hurley, PK;Holmes, JD;Long, B (2018) Monolayer doping and other strategies in high surface-to-volume ratio silicon devices 2018 18TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) , pp.65-70 [Details]
(2018)2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017
Gity F.;Ansari L.;Monaghan S.;Mirabelli G.;Torchia P.;Hydes A.;Schmidt M.;Sheehan B.;Mcevoy N.;Hallam T.;Cherkaoui K.;Nagle R.;Duffy R.;Duesberg G.;Hurley P. (2018) Ex-situ plasma doping of MoS2 thin films synthesised by thermally assisted conversion process: Simulations and experiment 2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017 , pp.175-176 [DOI] [Details]
(2018)IEEE 18th International Workshop on Junction Technology (IWJT)
Duffy, R.; Kennedy, N.; Mirabelli, G.; Galluccio, E.; Hurley, P. K.; Holmes, J. D.; Long, B. (2018) Monolayer doping and other strategies in high surface-to-volume ratio silicon devices IEEE 18th International Workshop on Junction Technology (IWJT) Shanghai, China, , 08-MAR-18 - 09-MAR-18 , pp.1-6   [DOI] [Full Text] [Details]
(2018)Proceedings of the International Conference on Ion Implantation Technology
Machale J.;Meaney F.;Sheehan B.;Duffy R.;Kennedy N.;Long B. (2018) Electrical Evaluation of Ion Implant, Liquid, and Gas Sources for Doping of Ultra-Thin Body SOI and Si Nanowire Structures Proceedings of the International Conference on Ion Implantation Technology , pp.82-85 [DOI] [Details]
(2017)European Solid-State Device Research Conference
Mirabelli G.;Gity F.;Monaghan S.;Hurley P.;Duffy R. (2017) Impact of impurities, interface traps and contacts on MoS2 MOSFETs: Modelling and experiments European Solid-State Device Research Conference , pp.288-291 [DOI] [Details]
(2017)2017 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2017)
Monaghan, S;Gity, F;Duffy, R;Mirabelli, G;McCarthy, M;Cherkaoui, K;Povey, IM;Nagle, RE;Hurley, PK;Lindemuth, JR;Napolitani, E (2017) Hall-effect Mobility for a Selection of Natural and Synthetic 2D Semiconductor Crystals 2017 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2017) , pp.27-30 [Details]
(2017)Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
Monaghan S.;Gity F.;Duffy R.;Mirabelli G.;McCarthy M.;Cherkaoui K.;Povey I.;Nagle R.;Hurley P.;Lindemuth J.;Napolitani E. (2017) Hall-effect mobility for a selection of natural and synthetic 2D semiconductor crystals Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings , pp.27-30 [DOI] [Details]
(2017)2017 IEEE 12TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC)
Gity, F;Ansari, L;Monaghan, S;Mirabelli, G;Torchia, P;Hydes, A;Schmidt, M;Sheehan, B;McEvoy, N;Hallam, T;Cherkaoui, K;Nagle, R;Duffy, R;Duesberg, GS;Hurley, PK (2017) Ex-situ plasma doping of MoS2 thin films synthesised by thermally assisted conversion process: simulations and experiment 2017 IEEE 12TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC) , pp.175-176 [Details]
(2017)2017 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT)
Ponath, P;Posadas, AB;Ren, Y;Wu, XY;Lai, KJ;Demkov, A;Schmidt, M;Duffy, R;Hurley, P;Wang, J;Young, C;Vasudevan, RK;Okatan, MB;Jesse, S;Kalinin, SV (2017) Advances of the development of a ferroelectric field-effect transistor on Ge(001) 2017 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT) [Details]
(2017)2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)
Mirabelli, G;Gity, F;Monaghan, S;Hurley, PK;Duffy, R (2017) Impact of impurities, interface traps and contacts on MoS2 MOSFETs: modelling and experiments 2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) , pp.288-291 [Details]
(2016)13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
Murphy-Armando, Felipe; Liu, Chang; Zhao, Yi; Duffy, Ray (2016) Mind the drain from strain: effects of strain on the leakage current of Si diodes 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Hangzhou, China, , 25-OCT-16 - 28-OCT-16 , pp.802-804 [DOI] [Full Text] [Details]
(2016)2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)
Murphy-Armando, F;Liu, C;Zhao, Y;Duffy, R (2016) Mind the drain from strain: effects of strain on the leakage current of Si diodes 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) , pp.802-804 [Details]
(2016)SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 6
Duffy, R (2016) The (R) Evolution Of The Junctionless Transistor SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 6 , pp.115-126 [DOI] [Details]
(2016)Proceedings of the 6th International Conference Nanomaterials: Applications and Properties, NAP 2016
Nazarov A.;Yukhymchuk V.;Okholin P.;Lytvyn P.;Lysenko V.;Glotov V.;Nazarova T.;Napolitani E.;Duffy R. (2016) Hydrogen plasma modification of shallow implanted Germanium layers Proceedings of the 6th International Conference Nanomaterials: Applications and Properties, NAP 2016 [DOI] [Details]
(2016)INTERNATIONAL CONFERENCE ON NANOMATERIALS: APPLICATION & PROPERTIES (NAP)
Nazarov, AN;Yukhymchuk, VO;Okholin, PN;Lytvyn, PM;Lysenko, VS;Glotov, VI;Nazarova, TM;Napolitani, E;Duffy, R (2016) Hydrogen Plasma Modification of Shallow Implanted Germanium Layers INTERNATIONAL CONFERENCE ON NANOMATERIALS: APPLICATION & PROPERTIES (NAP) [Details]
(2014)Proceedings of the International Conference on Ion Implantation Technology
Shayesteh M.;O'Connell D.;Gity F.;Murphy-Armando F.;Yu R.;Huet K.;Toque-Tresonne I.;Cristiano F.;Boninelli S.;Henrichsen H.;Petersen D.;Nielsen P.;Duffy R. (2014) Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios Proceedings of the International Conference on Ion Implantation Technology [DOI] [Details]
(2014)2014 International Workshop on Junction Technology, IWJT 2014
Duffy R.;Shayesteh M. (2014) Novel processing for access resistance reduction in Germanium devices 2014 International Workshop on Junction Technology, IWJT 2014 , pp.155-160 [DOI] [Details]
(2014)Molecular Layer Doping: Non-destructive Doping of Silicon and Germanium
Long, B,Verni, GA,O'Connell, J,Holmes, J,Shayesteh, M,O'Connell, D,Duffy, R, (2014) 2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014) Molecular Layer Doping: Non-destructive Doping of Silicon and Germanium [Details]
(2014)Laser thermal annealing of Ge, optimized for highly activated dopants and diode I-ON/I-OFF ratios
Shayesteh, M,Connell, DO,Gity, F,Murphy-Armando, F,Yu, R,Huet, K,Toque-Tresonne, I,Cristiano, F,Boninelli, S,Henrichsen, HH,Petersen, DH,Nielsen, PF,Duffy, R, (2014) 2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014) Laser thermal annealing of Ge, optimized for highly activated dopants and diode I-ON/I-OFF ratios [Details]
(2014)PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 1
Huet, K;Shayesteh, M;Toque-Tresonne, I;Negru, R;Daunt, CLM;Kelly, N;O'Connell, D;Yu, R;Djara, V;Carolan, P;Petkov, N;Duffy, R (2014) Laser thermal anneal formation of atomically-flat low-resistive germanide contacts PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 1 , pp.169-173 [DOI] [Details]
(2014)Ion Implantation Technology (IIT), 2014 20th International Conference
Long, B.; Verni, G. A.; O’Connell, J.; Shayesteh, M.; O’Connell, D.; Duffy, R.; Holmes, J. D. (2014) Molecular layer doping: non-destructive doping of silicon and germanium Ion Implantation Technology (IIT), 2014 20th International Conference Portland, OR, USA, , 26-JUN-14 - 04-JUL-14 , pp.1-4   [DOI] [Full Text] [Details]
(2014)2014 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)
Duffy, R;Shayesteh, M (2014) Novel processing for access resistance reduction in Germanium devices 2014 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) , pp.155-160 [Details]
(2014)2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014)
Shayesteh, M;Connell, DO;Gity, F;Murphy-Armando, F;Yu, R;Huet, K;Toque-Tresonne, I;Cristiano, F;Boninelli, S;Henrichsen, HH;Petersen, DH;Nielsen, PF;Duffy, R (2014) Laser thermal annealing of Ge, optimized for highly activated dopants and diode I-ON/I-OFF ratios 2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014) [Details]
(2014)PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 1
Duffy, R;Heringa, A (2014) Characterisation of electrically active defects PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 1 , pp.130-137 [DOI] [Details]
(2013)Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013
Duffy R.;Shayesteh M.;Kazadojev I.;Yu R. (2013) Germanium doping challenges Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013 , pp.16-21 [DOI] [Details]
(2013)SOLID-STATE ELECTRONICS
Yu, R;Nazarov, AN;Lysenko, VS;Das, S;Ferain, I;Razavi, P;Shayesteh, M;Kranti, A;Duffy, R;Colinge, JP (2013) Impact ionization induced dynamic floating body effect in junctionless transistors SOLID-STATE ELECTRONICS , pp.28-33 [DOI] [Details]
(2012)ION IMPLANTATION TECHNOLOGY 2012
Shayesteh, M;Djara, V;Schmidt, M;White, M;Kelleher, AM;Duffy, R (2012) Fluorine implantation in germanium for dopant diffusion control ION IMPLANTATION TECHNOLOGY 2012 , pp.115-118 [DOI] [Details]
(2011)European Solid-State Device Research Conference
Shayesteh M.;Daunt C.;O'Connell D.;Djara V.;White M.;Long B.;Duffy R. (2011) N-type doped germanium contact resistance extraction and evaluation for advanced devices European Solid-State Device Research Conference , pp.235-238 [DOI] [Details]
(2011)SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS
Duffy, R;Shayesteh, M;White, M;Kearney, J;Kelleher, AM (2011) Problems Of N-type Doped Regions In Germanium, Their Solutions, And How To Beat The ITRS Roadmap SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS , pp.185-192 [DOI] [Details]
(2011)DIELECTRICS IN NANOSYSTEMS -AND- GRAPHENE, GE/III-V, NANOWIRES AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 3
Gajula, DR;McNeill, DW;Baine, P;Fleming, P;Duffy, R;Armstrong, BM (2011) Characterization of Nickel Germanide Schottky Contacts for the Fabrication of Germanium p-channel MOSFETs DIELECTRICS IN NANOSYSTEMS -AND- GRAPHENE, GE/III-V, NANOWIRES AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 3 , pp.521-527 [DOI] [Details]
(2011)Germanium Fin Structure Optimization for Future MugFET and FinFET Applications
Shayesteh, M,Duffy, R,McCarthy, B,Blake, A,White, M,Scully, J,Yu, R,Djara, V,Schmidt, M,Petkov, N,Kelleher, AM,Roozeboom, F,Kwong, DL,Timans, PJ,Gusev, EP,Iwai, H,Ozturk, MC,Narayanan V (2011) SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS Germanium Fin Structure Optimization for Future MugFET and FinFET Applications , pp.27-34 [DOI] [Details]
(2010)AIP Conference Proceedings
Duffy R.;Shayesteh M. (2010) FinFET doping; material science, metrology, and process modeling studies for optimized device performance AIP Conference Proceedings , pp.17-22 [DOI] [Details]
(2010)ION IMPLANTATION TECHNOLOGY 2010
Duffy, R;Shayesteh, M (2010) FinFET Doping ; Material Science, Metrology, and Process Modeling Studies for Optimized Device Performance ION IMPLANTATION TECHNOLOGY 2010 , pp.17-22 [Details]
(2009)2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING
Pelaz, L;Marques, L;Aboy, M;Lopez, P;Santos, I;Duffy, R (2009) Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING [Details]
(2009)SOLID-STATE ELECTRONICS
Ferain, I;Duffy, R;Collaert, N;van Dal, MJH;Pawlak, BJ;O'Sullivan, B;Witters, L;Rooyackers, R;Conard, T;Popovici, M;van Elshocht, S;Kaiser, M;Weemaes, RGR;Swerts, J;Jurczak, M;Lander, RJP;De Meyer, K (2009) Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering SOLID-STATE ELECTRONICS , pp.760-766 [DOI] [Details]
(1999)Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Palser, K and Concannon, A and Duffy, R and Mathewson, A (1999) 3D Numerical Simulation for Assisting External Latch-up Protection Test Structure Design Solid-State Device Research Conference, 1999. Proceeding of the 29th European , pp.508-511 [Details]
(1995)IEE Colloquium (Digest)
Duffy R.;Concannon A.;Mathewson A. (1995) Advanced process development using numerical simulation IEE Colloquium (Digest) [Details]
(1999)Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Duffy, R and Concannon, A and Mathewson, A and Slotboom, M and Dormans, D and Wils, N and Verhaar, R (1999) Scaling low power embedded flash EEPROMs to 0.18 um Solid-State Device Research Conference, 1999. Proceeding of the 29th European , pp.620-623 [Details]

Editorship

 YearPublication
(2020)Advances in Silicon-Nanoelectronics, Nanostructures and High-Efficiency Si-Photovoltaics.
Hiller, D;Duffy, R;Strehle, S;Stradins, P (2020) Advances in Silicon-Nanoelectronics, Nanostructures and High-Efficiency Si-Photovoltaics. WEINHEIM: Editorship [DOI] [Details]
(2017)Preface.
Napolitani, E;Williams, J;Duffy, R (2017) Preface. OXFORD: Editorship [DOI] [Details]
(2016)E-MRS Spring Meeting 2015 Symposium Z: Nanomaterials and processes for advanced semiconductor CMOS devices Preface.
Napolitani, E,Duffy, R,Zographos, N,van Dal, M (2016) E-MRS Spring Meeting 2015 Symposium Z: Nanomaterials and processes for advanced semiconductor CMOS devices Preface. Editorship [DOI] [Details]
(2012)Preface: 19th International Conference on Ion Implantation Technology.
Pelaz L.;Santos I.;Duffy R.;Torregrosa F.;Bourdelle K. (2012) Preface: 19th International Conference on Ion Implantation Technology. Editorship [DOI] [Details]

Reviews

 YearPublication
(2016)Chemical approaches for doping nanodevice architectures.
O'Connell, J;Biswas, S;Duffy, R;Holmes, JD (2016) Chemical approaches for doping nanodevice architectures. BRISTOL: Reviews [DOI] [Details]
(2014)Processing of germanium for integrated circuits.
Duffy R.;Shayesteh M.;Yu R. (2014) Processing of germanium for integrated circuits. Reviews [DOI] [Details]

Professional Activities

Conference Contributions

 YearPublication
(1998)Simulation based development of EEPROM devices within a 0.35 $\mu$m process,
Duffy, R and Concannon, A and Mathewson, A and de Graaf, C and Slotboom, M and Verhaar, R (1998) Simulation based development of EEPROM devices within a 0.35 $\mu$m process. [Oral Presentation], Simulation based development of EEPROM devices within a 0.35 $\mu$m process, Leuven, Belgium . [Details]

Committees

 CommitteeFunctionFrom / To
SISPAD 2018 Technical Program Committee/
IEEENANO 2018 Technical Program Committee/
Ion Implantation Technology Conference 2020 Technical Program Committee/
Ion Implantation Technology Conference 2018 Technical Program Committee/
Ion Implantation Technology Conference 2016 Technical Program Committee/
Ion Implantation Technology Conference 2014 Technical Program Committee/
Ion Implantation Technology Conference 2012 Technical Program Committee/
European Material Research Society (E-MRS) Symposium Organiser Spring 2015/
European Material Research Society (E-MRS) Symposium Organiser Fall 2017/
European Material Research Society (E-MRS) Symposium Organiser Spring 2019/

Journal Activities

 JournalRoleTo / From
Ieee Transactions On Electron Devices Referee-
Ieee Electron Device Letters Referee-
Chemistry Of Materials Referee-
Journal Of Applied Physics Referee-
Applied Physics Letters Referee-
Acs Omega Referee-
Journal Of Physical Chemistry Referee-
Vacuum Referee-
Journal Of Materials Chemistry C Referee-
Beilstein Journal Of Nanotechnology Referee-
Applied Surface Science Referee-
Semiconductor Science And Technology Referee-
Physica Status Solidi A Referee-
Materials Science In Semiconductor Processing Referee-
Nanoscale Referee-
Langmuir Referee-

Teaching Activities

Recent Postgraduates

 Graduation YearStudent NameInstitutionDegree TypeThesis Title
2013Ran Yu University College CorkPHDA study of Silicon and Germanium junctionless transistors
2014Maryam Shayesteh University College CorkPHDNovel processes, test structures, and characterisation for future Germanium technologies
2020Fiachra Harrington University College CorkME in Electrical and Electronic Engineering: Disruptive Devices for Quantum Technologies
2020Vinay Kumar Verma University College CorkMEngSc in Electrical and Electronic Engineering: Assessing Self Assembled Monolayer Quality on Germanium Devices

Current Postgraduate Students

 StudentDegree Type
Galluccio Emmanuele Doctoral Degree
Mirabelli Gioele Doctoral Degree
Kennedy Michael Noel Doctoral Degree
Meaney Fintan Masters Degree by Research

Modules Taught

 Term (ID))TitleLinkSubject
2021Processing of Integrated Circuits EE4024Processing of Integrated Circuits
2021Semiconductor IC Processing EE6047Semiconductor IC Processing

Contact details

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University College Cork

Coláiste na hOllscoile Corcaigh

College Road, Cork T12 K8AF

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