TY  - JOUR
  - Kazakova, O.,Kulkarni, J. S.,Arnold, D. C.,Holmes, J. D.
  - 2007
  - May
  - Journal of Applied Physics
  - Engineering the magnetic properties of Ge1-xMnx nanowires
  - Validated
  - ()
  - 101
  - 9
  - Possible origins of room-temperature ferromagnetism in GeMn nanowires (NWs) are investigated. Arrays of Ge1-xMnx NWs and Ge/Ge1-xMnx nanocables (NCs) (x=1%-5%) have been synthesized within the pores of anodized alumina oxide (AAO) membranes. The influence of annealing on the magnetic properties of Ge1-xMnx NWs is studied. The room-temperature ferromagnetism is preserved after the postfabrication annealing in inert atmosphere (T-ann=750 degrees C) demonstrating overall compatibility of Ge1-xMnx NWs with conventional complementary metal-oxide semiconductor technology. The role of oxygen in high-T-C ferromagnetic ordering is investigated in double-phased NCs with a Ge sheath. Despite a barrier to oxygen migration from the AAO membrane, samples still display room-temperature ferromagnetism, hence, ruling out any significant role of oxygen in the explanation of the high T-C in the system. The magnetic properties of the one-dimensional Ge1-xMnx nanostructures can be understood by considering interface related phenomena. (c) 2007 American Institute of Physics.
  - 0021-8979
  - ://000246567900315
DA  - 2007/05
ER  - 

@article{V16860783,
   = {Kazakova,  O. and Kulkarni,  J. S. and Arnold,  D. C. and Holmes,  J. D. },
   = {2007},
   = {May},
   = {Journal of Applied Physics},
   = {Engineering the magnetic properties of Ge1-xMnx nanowires},
   = {Validated},
   = {()},
   = {101},
   = {9},
   = {{Possible origins of room-temperature ferromagnetism in GeMn nanowires (NWs) are investigated. Arrays of Ge1-xMnx NWs and Ge/Ge1-xMnx nanocables (NCs) (x=1%-5%) have been synthesized within the pores of anodized alumina oxide (AAO) membranes. The influence of annealing on the magnetic properties of Ge1-xMnx NWs is studied. The room-temperature ferromagnetism is preserved after the postfabrication annealing in inert atmosphere (T-ann=750 degrees C) demonstrating overall compatibility of Ge1-xMnx NWs with conventional complementary metal-oxide semiconductor technology. The role of oxygen in high-T-C ferromagnetic ordering is investigated in double-phased NCs with a Ge sheath. Despite a barrier to oxygen migration from the AAO membrane, samples still display room-temperature ferromagnetism, hence, ruling out any significant role of oxygen in the explanation of the high T-C in the system. The magnetic properties of the one-dimensional Ge1-xMnx nanostructures can be understood by considering interface related phenomena. (c) 2007 American Institute of Physics.}},
  issn = {0021-8979},
   = {://000246567900315},
  source = {IRIS}
}