TY  - JOUR
  - Wu, X. Y.,Kulkarni, J. S.,Collins, G.,Petkov, N.,Almecija, D.,Boland, J. J.,Erts, D.,Holmes, J. D.
  - 2008
  - October
  - Chemistry of Materials
  - Synthesis and Electrical and Mechanical Properties of Silicon and Germanium Nanowires.
  - Validated
  - ()
  - 20
  - 19
  - 5954
  - 5967
  - The development of semiconductor nanowires has recently been the focus Of extensive research as these structures may play an important role ill the next generation of: nanoscale devices. Using semiconductor nanowires as building blocks. a number of high performance electronic devices have been fabricated. In this review. we discuss synthetic methodologies and electrical characteristics of Si, Ge, and Ge/Si core/shell nanowires. In particular the fabrication and electrical properties of a variety of nanowire-based field effect transistors (FETs) are discussed. Although the bottom-up approach has the potential to go far beyond the limits of top-down technology, new techniques need to be developed to realize precise control of structural parameters, such as size uniformity, growth direction, and dopant distribution within nanowires to produce nanowire-based electronics on a large scale.
  - 0897-4756
  - ://000259871500006
DA  - 2008/10
ER  - 

@article{V16860795,
   = {Wu,  X. Y. and Kulkarni,  J. S. and Collins,  G. and Petkov,  N. and Almecija,  D. and Boland,  J. J. and Erts,  D. and Holmes,  J. D. },
   = {2008},
   = {October},
   = {Chemistry of Materials},
   = {Synthesis and Electrical and Mechanical Properties of Silicon and Germanium Nanowires.},
   = {Validated},
   = {()},
   = {20},
   = {19},
  pages = {5954--5967},
   = {{The development of semiconductor nanowires has recently been the focus Of extensive research as these structures may play an important role ill the next generation of: nanoscale devices. Using semiconductor nanowires as building blocks. a number of high performance electronic devices have been fabricated. In this review. we discuss synthetic methodologies and electrical characteristics of Si, Ge, and Ge/Si core/shell nanowires. In particular the fabrication and electrical properties of a variety of nanowire-based field effect transistors (FETs) are discussed. Although the bottom-up approach has the potential to go far beyond the limits of top-down technology, new techniques need to be developed to realize precise control of structural parameters, such as size uniformity, growth direction, and dopant distribution within nanowires to produce nanowire-based electronics on a large scale.}},
  issn = {0897-4756},
   = {://000259871500006},
  source = {IRIS}
}