Two-Terminal Nanoelectromechanical Devices Based on Germanium Nanowires

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TY  - JOUR
  - Andzane, J.,Petkov, N.,Livshits, A. I.,Boland, J. J.,Holmes, J. D.,Erts, D.
  - 2009
  - May
  - Nano Letters
  - Two-Terminal Nanoelectromechanical Devices Based on Germanium Nanowires
  - Validated
  - ()
  - 9
  - 5
  - 1824
  - 1829
  - A two-terminal bistable device, having both ON and OFF regimes, has been demonstrated with Ge nanowires using an in situ TEM-STM technique. The function of the device is based on delicately balancing electrostatic, elastic, and adhesion forces between the nanowires and the contacts, which can be controlled by the applied voltage. The operation and failure conditions of the bistable device were investigated, i.e. the influence of nanowire diameter, the surface oxide layer on the nanowires and the current density. During ON/OFF cycles the Ge nanowires were observed to be more stable than carbon nanotubes, working at similar conditions, due to the higher mechanical stability of the nanowires. The higher resistivity of Ge nanowires, compared to carbon nanotubes, provides potential application of these 1D nanostructures in high-voltage devices.
  - 1530-6984
  - ://000266157100017
DA  - 2009/05
ER  - 
@article{V17688916,
   = {Andzane,  J. and Petkov,  N. and Livshits,  A. I. and Boland,  J. J. and Holmes,  J. D. and Erts,  D. },
   = {2009},
   = {May},
   = {Nano Letters},
   = {Two-Terminal Nanoelectromechanical Devices Based on Germanium Nanowires},
   = {Validated},
   = {()},
   = {9},
   = {5},
  pages = {1824--1829},
   = {{A two-terminal bistable device, having both ON and OFF regimes, has been demonstrated with Ge nanowires using an in situ TEM-STM technique. The function of the device is based on delicately balancing electrostatic, elastic, and adhesion forces between the nanowires and the contacts, which can be controlled by the applied voltage. The operation and failure conditions of the bistable device were investigated, i.e. the influence of nanowire diameter, the surface oxide layer on the nanowires and the current density. During ON/OFF cycles the Ge nanowires were observed to be more stable than carbon nanotubes, working at similar conditions, due to the higher mechanical stability of the nanowires. The higher resistivity of Ge nanowires, compared to carbon nanotubes, provides potential application of these 1D nanostructures in high-voltage devices.}},
  issn = {1530-6984},
   = {://000266157100017},
  source = {IRIS}
}
AUTHORSAndzane, J.,Petkov, N.,Livshits, A. I.,Boland, J. J.,Holmes, J. D.,Erts, D.
YEAR2009
MONTHMay
JOURNAL_CODENano Letters
TITLETwo-Terminal Nanoelectromechanical Devices Based on Germanium Nanowires
STATUSValidated
TIMES_CITED()
SEARCH_KEYWORD
VOLUME9
ISSUE5
START_PAGE1824
END_PAGE1829
ABSTRACTA two-terminal bistable device, having both ON and OFF regimes, has been demonstrated with Ge nanowires using an in situ TEM-STM technique. The function of the device is based on delicately balancing electrostatic, elastic, and adhesion forces between the nanowires and the contacts, which can be controlled by the applied voltage. The operation and failure conditions of the bistable device were investigated, i.e. the influence of nanowire diameter, the surface oxide layer on the nanowires and the current density. During ON/OFF cycles the Ge nanowires were observed to be more stable than carbon nanotubes, working at similar conditions, due to the higher mechanical stability of the nanowires. The higher resistivity of Ge nanowires, compared to carbon nanotubes, provides potential application of these 1D nanostructures in high-voltage devices.
PUBLISHER_LOCATION
ISBN_ISSN1530-6984
EDITION
URL://000266157100017
DOI_LINK
FUNDING_BODY
GRANT_DETAILS