TY  - JOUR
  - van der Meulen, M. I.,Petkov, N.,Morris, M. A.,Kazakova, O.,Han, X. H.,Wang, K. L.,Jacob, A. P.,Holmes, J. D.
  - 2009
  - January
  - Nano Letters
  - Single Crystalline Ge1.xMnx Nanowires as Building Blocks for Nanoelectronics
  - Validated
  - ()
  - 9
  - 1
  - 50
  - 56
  - Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5-1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm(2)/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.
  - 1530-6984
  - ://000262519100009
DA  - 2009/01
ER  - 

@article{V17688942,
   = {van der Meulen,  M. I. and Petkov,  N. and Morris,  M. A. and Kazakova,  O. and Han,  X. H. and Wang,  K. L. and Jacob,  A. P. and Holmes,  J. D. },
   = {2009},
   = {January},
   = {Nano Letters},
   = {Single Crystalline Ge1.xMnx Nanowires as Building Blocks for Nanoelectronics},
   = {Validated},
   = {()},
   = {9},
   = {1},
  pages = {50--56},
   = {{Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5-1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm(2)/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.}},
  issn = {1530-6984},
   = {://000262519100009},
  source = {IRIS}
}