IRIS publication 201084057
Directed self-assembly of PS-b-PMMA block copolymer using HSQ lines for translational alignment
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TY - JOUR - Borah, D.; Rassapa, S.; Shaw, M. T.; Hobbs, R. G.; Petkov, N.; Schmidt, M.; Holmes, J. D.; Morris, M. A. - 2013 - March - Journal of Materials Chemistry C - Directed self-assembly of PS-b-PMMA block copolymer using HSQ lines for translational alignment - Published - Altmetric: 1 () - 1 - 6 - 1192 - 1196 - We report here the graphoepitaxial alignment of a lamellar forming PS-b-PMMA block copolymer (BCP) for directed self-assembly using topographical patterns (simple line structures) of hydrogen silsesquioxane (HSQ). The system demonstrates the importance of the sidewall chemistry on translational alignment of BCP domains. A method was developed where a silicon substrate was precoated with a hydroxylterminated random copolymer brush of PS-r-PMMA prior to the HSQ feature formation process. The brush ordains the vertical (to the substrate plane) alignment of the BCP lamellar microdomains. Translational BCP alignment is a result of PMMA selectively wetting the HSQ. The formed BCP pattern was selectively etched to remove the PMMA domain allowing direct imaging and to demonstrate capability in forming an on-chip mask. - http://pubs.rsc.org/en/journals/journalissues/tc - 10.1039/c2tc00289b DA - 2013/03 ER -
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@article{V201084057, = {Borah, D. and Rassapa, S. and Shaw, M. T. and Hobbs, R. G. and Petkov, N. and Schmidt, M. and Holmes, J. D. and Morris, M. A.}, = {2013}, = {March}, = {Journal of Materials Chemistry C}, = {Directed self-assembly of PS-b-PMMA block copolymer using HSQ lines for translational alignment}, = {Published}, = {Altmetric: 1 ()}, = {1}, = {6}, pages = {1192--1196}, = {{We report here the graphoepitaxial alignment of a lamellar forming PS-b-PMMA block copolymer (BCP) for directed self-assembly using topographical patterns (simple line structures) of hydrogen silsesquioxane (HSQ). The system demonstrates the importance of the sidewall chemistry on translational alignment of BCP domains. A method was developed where a silicon substrate was precoated with a hydroxylterminated random copolymer brush of PS-r-PMMA prior to the HSQ feature formation process. The brush ordains the vertical (to the substrate plane) alignment of the BCP lamellar microdomains. Translational BCP alignment is a result of PMMA selectively wetting the HSQ. The formed BCP pattern was selectively etched to remove the PMMA domain allowing direct imaging and to demonstrate capability in forming an on-chip mask.}}, = {http://pubs.rsc.org/en/journals/journalissues/tc}, = {10.1039/c2tc00289b}, source = {IRIS} }
Data as stored in IRIS
AUTHORS | Borah, D.; Rassapa, S.; Shaw, M. T.; Hobbs, R. G.; Petkov, N.; Schmidt, M.; Holmes, J. D.; Morris, M. A. | ||
YEAR | 2013 | ||
MONTH | March | ||
JOURNAL_CODE | Journal of Materials Chemistry C | ||
TITLE | Directed self-assembly of PS-b-PMMA block copolymer using HSQ lines for translational alignment | ||
STATUS | Published | ||
TIMES_CITED | Altmetric: 1 () | ||
SEARCH_KEYWORD | |||
VOLUME | 1 | ||
ISSUE | 6 | ||
START_PAGE | 1192 | ||
END_PAGE | 1196 | ||
ABSTRACT | We report here the graphoepitaxial alignment of a lamellar forming PS-b-PMMA block copolymer (BCP) for directed self-assembly using topographical patterns (simple line structures) of hydrogen silsesquioxane (HSQ). The system demonstrates the importance of the sidewall chemistry on translational alignment of BCP domains. A method was developed where a silicon substrate was precoated with a hydroxylterminated random copolymer brush of PS-r-PMMA prior to the HSQ feature formation process. The brush ordains the vertical (to the substrate plane) alignment of the BCP lamellar microdomains. Translational BCP alignment is a result of PMMA selectively wetting the HSQ. The formed BCP pattern was selectively etched to remove the PMMA domain allowing direct imaging and to demonstrate capability in forming an on-chip mask. | ||
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URL | http://pubs.rsc.org/en/journals/journalissues/tc | ||
DOI_LINK | 10.1039/c2tc00289b | ||
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