Preparation of substrates intended for the growth of lower threading dislocation densities within nitride based UV multiple quantum wells

Typeset version

 

TY  - CONF
  - Conroy, M. A.; Petkov, N.; Li, H. N.; Sadler, T. C.; Zubialevich, V.; Holmes, J. D.; Parbrook, P. J.
  - ECS Transactions
  - Preparation of substrates intended for the growth of lower threading dislocation densities within nitride based UV multiple quantum wells
  - 2013
  - October
  - Published
  - 1
  - ()
  - Vol. 53(2)
  - 39
  - 42
  - Toronto, ON, Canada
  - 12-MAY-13
  - 16-MAY-13
  - In this study a variety of nano-patterning techniques were applied to III-N device fabrication. A block co-polymer/metal oxide novel surface texturing method was utilised to achieve a long ranged ordered template. Nano-sphere lithography was also applied to UV multiple quantum well (MQW) structural growth using a silica nanoparticle monolayer as the mask. The monolayer was produced by a self-assembly technique without the need for either a spin coater or Langmuir-Blodgett trough resulting in a low cost arrangement. Using these nano-sized masks allows for the production of nano-rods in a much simpler method than previously used techniques. For comparison nano-rods were made by electron beam lithography at various diameters and lengths for a comprehensive investigation of crystal defects, in particular threading dislocations (TDs).
  - http://ecst.ecsdl.org/
  - 10.1149/05302.0039ecst
DA  - 2013/10
ER  - 
@inproceedings{V232444527,
   = {Conroy, M. A. and  Petkov, N. and  Li, H. N. and  Sadler, T. C. and  Zubialevich, V. and  Holmes, J. D. and  Parbrook, P. J.},
   = {ECS Transactions},
   = {{Preparation of substrates intended for the growth of lower threading dislocation densities within nitride based UV multiple quantum wells}},
   = {2013},
   = {October},
   = {Published},
   = {1},
   = {()},
   = {Vol. 53(2) },
  pages = {39--42},
   = {Toronto, ON, Canada},
  month = {May},
   = {16-MAY-13},
   = {{In this study a variety of nano-patterning techniques were applied to III-N device fabrication. A block co-polymer/metal oxide novel surface texturing method was utilised to achieve a long ranged ordered template. Nano-sphere lithography was also applied to UV multiple quantum well (MQW) structural growth using a silica nanoparticle monolayer as the mask. The monolayer was produced by a self-assembly technique without the need for either a spin coater or Langmuir-Blodgett trough resulting in a low cost arrangement. Using these nano-sized masks allows for the production of nano-rods in a much simpler method than previously used techniques. For comparison nano-rods were made by electron beam lithography at various diameters and lengths for a comprehensive investigation of crystal defects, in particular threading dislocations (TDs).}},
   = {http://ecst.ecsdl.org/},
   = {10.1149/05302.0039ecst},
  source = {IRIS}
}
AUTHORSConroy, M. A.; Petkov, N.; Li, H. N.; Sadler, T. C.; Zubialevich, V.; Holmes, J. D.; Parbrook, P. J.
TITLEECS Transactions
PUBLICATION_NAMEPreparation of substrates intended for the growth of lower threading dislocation densities within nitride based UV multiple quantum wells
YEAR2013
MONTHOctober
STATUSPublished
PEER_REVIEW1
TIMES_CITED()
SEARCH_KEYWORD
EDITORSVol. 53(2)
START_PAGE39
END_PAGE42
LOCATIONToronto, ON, Canada
START_DATE12-MAY-13
END_DATE16-MAY-13
ABSTRACTIn this study a variety of nano-patterning techniques were applied to III-N device fabrication. A block co-polymer/metal oxide novel surface texturing method was utilised to achieve a long ranged ordered template. Nano-sphere lithography was also applied to UV multiple quantum well (MQW) structural growth using a silica nanoparticle monolayer as the mask. The monolayer was produced by a self-assembly technique without the need for either a spin coater or Langmuir-Blodgett trough resulting in a low cost arrangement. Using these nano-sized masks allows for the production of nano-rods in a much simpler method than previously used techniques. For comparison nano-rods were made by electron beam lithography at various diameters and lengths for a comprehensive investigation of crystal defects, in particular threading dislocations (TDs).
FUNDED_BY*
URLhttp://ecst.ecsdl.org/
DOI_LINK10.1149/05302.0039ecst
FUNDING_BODY
GRANT_DETAILS