IRIS publication 261554906
Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors
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TY - JOUR - Buitrago, E.; Fernández-Bolaños Badia, M.; Georgiev, Y. M.; Yu, R.; lotty, O.; Holmes, J. D.; Nightingale, A. M.; Guerin, H. M.; Ionescu, A. M. - 2014 - June - Sensors and Actuators, B: Chemical - Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors - Published - Altmetric: 1 () - 199 - 291 - 300 - A 3D vertically stacked silicon nanowire (SiNW) field effect transistor featuring a high density array offully depleted channels gated by a backgate and one or two symmetrical platinum side-gates through a liquid has been electrically characterized for their implementation into a robust biosensing system.The structures have also been characterized electrically under vacuum when completely surrounded by a thick oxide layer. When fully suspended, the SiNWs may be surrounded by a conformal high- gatedielectric (HfO2) or silicon dioxide. The high density array of nanowires (up to 7 or 8 × 20 SiNWs in thevertical and horizontal direction, respectively) provides for high drive currents (1.3 mA/m, normalizedto an average NW diameter of 30 nm at VSG = 3 V, and Vd = 50 mV, for a standard structure with 7 × 10 NWs stacked) and high chances of biomolecule interaction and detection. The use of silicon on insulatorsubstrates with a low doped device layer significantly reduces leakage currents for excellent Ion/Ioff ratios >10^6 of particular importance for low power applications. When the nanowires are submerged in a liquid,they feature a gate all around architecture with improved electrostatics that provides steep subthresholdslopes (SS < 75 mV/dec), low drain induced barrier lowering (DIBL < 20 mV/V) and high transconductances(gm> 10 S) while allowing for the entire surface area of the nanowire to be available for biomoleculesensing. The fabricated devices have small SiNW diameters (down to dNW∼ 15–30 nm) in order to be fullydepleted and provide also high surface to volume ratios for high sensitivities. - Amsterdam, The Netherlands - http://www.journals.elsevier.com/sensors-and-actuators-b-chemical/ - 10.1016/j.snb.2014.03.099 DA - 2014/06 ER -
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@article{V261554906, = {Buitrago, E. and Fernández-Bolaños Badia, M. and Georgiev, Y. M. and Yu, R. and lotty, O. and Holmes, J. D. and Nightingale, A. M. and Guerin, H. M. and Ionescu, A. M.}, = {2014}, = {June}, = {Sensors and Actuators, B: Chemical}, = {Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors}, = {Published}, = {Altmetric: 1 ()}, = {199}, pages = {291--300}, = {{A 3D vertically stacked silicon nanowire (SiNW) field effect transistor featuring a high density array offully depleted channels gated by a backgate and one or two symmetrical platinum side-gates through a liquid has been electrically characterized for their implementation into a robust biosensing system.The structures have also been characterized electrically under vacuum when completely surrounded by a thick oxide layer. When fully suspended, the SiNWs may be surrounded by a conformal high- gatedielectric (HfO2) or silicon dioxide. The high density array of nanowires (up to 7 or 8 × 20 SiNWs in thevertical and horizontal direction, respectively) provides for high drive currents (1.3 mA/m, normalizedto an average NW diameter of 30 nm at VSG = 3 V, and Vd = 50 mV, for a standard structure with 7 × 10 NWs stacked) and high chances of biomolecule interaction and detection. The use of silicon on insulatorsubstrates with a low doped device layer significantly reduces leakage currents for excellent Ion/Ioff ratios >10^6 of particular importance for low power applications. When the nanowires are submerged in a liquid,they feature a gate all around architecture with improved electrostatics that provides steep subthresholdslopes (SS < 75 mV/dec), low drain induced barrier lowering (DIBL < 20 mV/V) and high transconductances(gm> 10 S) while allowing for the entire surface area of the nanowire to be available for biomoleculesensing. The fabricated devices have small SiNW diameters (down to dNW∼ 15–30 nm) in order to be fullydepleted and provide also high surface to volume ratios for high sensitivities.}}, = {Amsterdam, The Netherlands}, = {http://www.journals.elsevier.com/sensors-and-actuators-b-chemical/}, = {10.1016/j.snb.2014.03.099}, source = {IRIS} }
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AUTHORS | Buitrago, E.; Fernández-Bolaños Badia, M.; Georgiev, Y. M.; Yu, R.; lotty, O.; Holmes, J. D.; Nightingale, A. M.; Guerin, H. M.; Ionescu, A. M. | ||
YEAR | 2014 | ||
MONTH | June | ||
JOURNAL_CODE | Sensors and Actuators, B: Chemical | ||
TITLE | Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors | ||
STATUS | Published | ||
TIMES_CITED | Altmetric: 1 () | ||
SEARCH_KEYWORD | |||
VOLUME | 199 | ||
ISSUE | |||
START_PAGE | 291 | ||
END_PAGE | 300 | ||
ABSTRACT | A 3D vertically stacked silicon nanowire (SiNW) field effect transistor featuring a high density array offully depleted channels gated by a backgate and one or two symmetrical platinum side-gates through a liquid has been electrically characterized for their implementation into a robust biosensing system.The structures have also been characterized electrically under vacuum when completely surrounded by a thick oxide layer. When fully suspended, the SiNWs may be surrounded by a conformal high- gatedielectric (HfO2) or silicon dioxide. The high density array of nanowires (up to 7 or 8 × 20 SiNWs in thevertical and horizontal direction, respectively) provides for high drive currents (1.3 mA/m, normalizedto an average NW diameter of 30 nm at VSG = 3 V, and Vd = 50 mV, for a standard structure with 7 × 10 NWs stacked) and high chances of biomolecule interaction and detection. The use of silicon on insulatorsubstrates with a low doped device layer significantly reduces leakage currents for excellent Ion/Ioff ratios >10^6 of particular importance for low power applications. When the nanowires are submerged in a liquid,they feature a gate all around architecture with improved electrostatics that provides steep subthresholdslopes (SS < 75 mV/dec), low drain induced barrier lowering (DIBL < 20 mV/V) and high transconductances(gm> 10 S) while allowing for the entire surface area of the nanowire to be available for biomoleculesensing. The fabricated devices have small SiNW diameters (down to dNW∼ 15–30 nm) in order to be fullydepleted and provide also high surface to volume ratios for high sensitivities. | ||
PUBLISHER_LOCATION | Amsterdam, The Netherlands | ||
ISBN_ISSN | |||
EDITION | |||
URL | http://www.journals.elsevier.com/sensors-and-actuators-b-chemical/ | ||
DOI_LINK | 10.1016/j.snb.2014.03.099 | ||
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