TY  - JOUR
  - Cummins, C.; Mokarian, P.; Holmes, J. D.; Morris, M. A.
  - 2014
  - September
  - Journal of applied polymer science
  - Selective etching of polylactic acid in poly(styrene)-block-poly(D,L)lactide diblock copolymer for nanoscale patterning
  - Published
  - Altmetric: 1 ()
  - 131
  - 18
  - 40798(1)
  - 40798(12)
  - Self-assembled thin films of a lamellar forming polystyrene-block-poly(D,L)lactide (PS-b-PLA) block copolymer (BCP) contain a “reactive” block that can be readily removed to provide a template for substrate pattern formation. Various methods of PLA removal were studied here with a view to develop the system as an on-chip etch mask for substrate patterning. Solvo-microwave annealing was used to induce microphase separation in PS-b-PLA BCP with a periodicity of 34 nm (Lo) on silicon and silicon on insulator (SOI) substrates. Wet etches based on alkaline and enzymatic solutions were studied in depth. Fourier transform-infrared (FT-IR) analysis showed that basic hydrolysis using sodium hydroxide (NaOH) or ammonium hydroxide (NH4OH) solutions resulted in greater PLA removal in comparison to an enzymatic approach using Proteinase K in a Tris-HCl buffer solution. However, in the enzymatic approach, the characteristic self-assembled fingerprint patterns were retained with less damage. Comparison to a dry etch procedure using a reactive ion etch (RIE) technique was made. A detailed study of the etch rate of PS and PLA homopolymer and PS-b-PLA shows depending on DC bias, the etch selectivity of PLA and PS (dPLA/dPS) can be almost doubled from 1.7 at DC bias 145 V to 3 at DC bias 270 V.
  - Hoboken, NJ, USA
  - http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1097-4628
  - 10.1002/app.40795
DA  - 2014/09
ER  - 

@article{V274158467,
   = {Cummins, C. and  Mokarian, P. and  Holmes, J. D. and  Morris, M. A.},
   = {2014},
   = {September},
   = {Journal of applied polymer science},
   = {Selective etching of polylactic acid in poly(styrene)-block-poly(D,L)lactide diblock copolymer for nanoscale patterning},
   = {Published},
   = {Altmetric: 1 ()},
   = {131},
   = {18},
  pages = {40798(1)--40798(12)},
   = {{Self-assembled thin films of a lamellar forming polystyrene-block-poly(D,L)lactide (PS-b-PLA) block copolymer (BCP) contain a “reactive” block that can be readily removed to provide a template for substrate pattern formation. Various methods of PLA removal were studied here with a view to develop the system as an on-chip etch mask for substrate patterning. Solvo-microwave annealing was used to induce microphase separation in PS-b-PLA BCP with a periodicity of 34 nm (Lo) on silicon and silicon on insulator (SOI) substrates. Wet etches based on alkaline and enzymatic solutions were studied in depth. Fourier transform-infrared (FT-IR) analysis showed that basic hydrolysis using sodium hydroxide (NaOH) or ammonium hydroxide (NH4OH) solutions resulted in greater PLA removal in comparison to an enzymatic approach using Proteinase K in a Tris-HCl buffer solution. However, in the enzymatic approach, the characteristic self-assembled fingerprint patterns were retained with less damage. Comparison to a dry etch procedure using a reactive ion etch (RIE) technique was made. A detailed study of the etch rate of PS and PLA homopolymer and PS-b-PLA shows depending on DC bias, the etch selectivity of PLA and PS (dPLA/dPS) can be almost doubled from 1.7 at DC bias 145 V to 3 at DC bias 270 V.}},
   = {Hoboken, NJ, USA},
   = {http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1097-4628},
   = {10.1002/app.40795},
  source = {IRIS}
}