Monitoring PMMA elimination by reactive ion etching from a lamellar PS-b-PMMA thin film by ex-situ TEM methods

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TY  - JOUR
  - Farrell, R. A.; Petkov, N.; Shaw, M. T.; Djara, V.; Holmes, J. D.; Morris, M. A.
  - 2010
  - October
  - Macromolecules
  - Monitoring PMMA elimination by reactive ion etching from a lamellar PS-b-PMMA thin film by ex-situ TEM methods
  - Published
  - ()
  - 43
  - 8651
  - 8655
  - Block copolymer thin films require selective elimination of one of their constituent blocks to access their potential as lithographic nanopatterns. This paper demonstrates an on-substrate TEM-based approach for establishing the removal of poly(methyl methyacrylate) from vertically oriented lamellar polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) thin films and subsequent transfer to the underlying silicon by reactive ion etching. The ex situ microscopy technique presents an insight into the removal of PMMA, the etch end point, PS faceting, etch anisotropy, and residual PS thickness.
  - http://pubs.acs.org/journal/mamobx
DA  - 2010/10
ER  - 
@article{V66158518,
   = {Farrell, R. A. and  Petkov, N. and  Shaw, M. T. and  Djara, V. and  Holmes, J. D. and  Morris, M. A.},
   = {2010},
   = {October},
   = {Macromolecules},
   = {Monitoring PMMA elimination by reactive ion etching from a lamellar PS-b-PMMA thin film by ex-situ TEM methods},
   = {Published},
   = {()},
   = {43},
  pages = {8651--8655},
   = {{Block copolymer thin films require selective elimination of one of their constituent blocks to access their potential as lithographic nanopatterns. This paper demonstrates an on-substrate TEM-based approach for establishing the removal of poly(methyl methyacrylate) from vertically oriented lamellar polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) thin films and subsequent transfer to the underlying silicon by reactive ion etching. The ex situ microscopy technique presents an insight into the removal of PMMA, the etch end point, PS faceting, etch anisotropy, and residual PS thickness.}},
   = {http://pubs.acs.org/journal/mamobx},
  source = {IRIS}
}
AUTHORSFarrell, R. A.; Petkov, N.; Shaw, M. T.; Djara, V.; Holmes, J. D.; Morris, M. A.
YEAR2010
MONTHOctober
JOURNAL_CODEMacromolecules
TITLEMonitoring PMMA elimination by reactive ion etching from a lamellar PS-b-PMMA thin film by ex-situ TEM methods
STATUSPublished
TIMES_CITED()
SEARCH_KEYWORD
VOLUME43
ISSUE
START_PAGE8651
END_PAGE8655
ABSTRACTBlock copolymer thin films require selective elimination of one of their constituent blocks to access their potential as lithographic nanopatterns. This paper demonstrates an on-substrate TEM-based approach for establishing the removal of poly(methyl methyacrylate) from vertically oriented lamellar polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) thin films and subsequent transfer to the underlying silicon by reactive ion etching. The ex situ microscopy technique presents an insight into the removal of PMMA, the etch end point, PS faceting, etch anisotropy, and residual PS thickness.
PUBLISHER_LOCATION
ISBN_ISSN
EDITION
URLhttp://pubs.acs.org/journal/mamobx
DOI_LINK
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