TY  - JOUR
  - Pepe, D,Zito, D
  - 2014
  - April
  - IEEE Microwave and Wireless Components Letters
  - 50 GHz mm-Wave CMOS Active Inductor
  - Validated
  - WOS: 19 ()
  - Active inductor CMOS millimeter-waves
  - 24
  - 254
  - 256
  - This letter presents a millimeter-wave active inductor circuit designed and fabricated in 65 nm bulk CMOS technology. The measurement results show an equivalent inductance of 133 pH with a quality factor exceeding 400 at 50 GHz, demonstrating experimentally for the first time the possibility to implement high-Q active inductors in CMOS technology operating at the mm-waves.
  - 10.1109/LMWC.2013.2295224
DA  - 2014/04
ER  - 

@article{V271355134,
   = {Pepe,  D and Zito,  D },
   = {2014},
   = {April},
   = {IEEE Microwave and Wireless Components Letters},
   = {50 GHz mm-Wave CMOS Active Inductor},
   = {Validated},
   = {WOS: 19 ()},
   = {Active inductor CMOS millimeter-waves},
   = {24},
  pages = {254--256},
   = {{This letter presents a millimeter-wave active inductor circuit designed and fabricated in 65 nm bulk CMOS technology. The measurement results show an equivalent inductance of 133 pH with a quality factor exceeding 400 at 50 GHz, demonstrating experimentally for the first time the possibility to implement high-Q active inductors in CMOS technology operating at the mm-waves.}},
   = {10.1109/LMWC.2013.2295224},
  source = {IRIS}
}