TY  - JOUR
  - Alimenti, F.; Leone, S.; Tasselli, G.; Palazzari, V.; Roselli, L.; Zito, D.;
  - 2009
  - September
  - IEEE Microwave and Wireless Components Letters
  - IF Amplifier Section in 90 nm CMOS Technology for SoC Microwave Radiometers
  - Validated
  - ()
  - Calibration microsystems microwave radiometry microwave receivers remote sensing DETECTOR
  - 19
  - 731
  - 733
  - In this letter a novel design solution in 90 nm CMOS technology is proposed for the IF amplifier, low-pass filter and square-law power detector of a system-on-chip (SoC) microwave radiometer. To minimize the number of off-chip components (just a single capacitor) the IF filter is based on an active configuration, whereas the power detector exploits the MOS transistor non-linearity, i.e., avoiding the need for Schottky diodes. The fabricated IF chip features a sensitivity of 3 mV/nW, a linearity range of about 25 dB around the 60 dBm level, a noise equivalent bandwidth of 58 MHz and a current consumption of only 1.8 mA at 1.2 V supply. The core area is within a rectangle of 220 x 540 mu m. The proposed design solution is also compatible with SiGe BiCMOS processes and can be regarded as a further step toward the realization of microwave radiometric sensors fully integrated on silicon.
  - DOI 10.1109/LMWC.2009.2032018
DA  - 2009/09
ER  - 

@article{V43334484,
   = {Alimenti, F. and  Leone, S. and  Tasselli, G. and  Palazzari, V. and  Roselli, L. and  Zito, D. and },
   = {2009},
   = {September},
   = {IEEE Microwave and Wireless Components Letters},
   = {IF Amplifier Section in 90 nm CMOS Technology for SoC Microwave Radiometers},
   = {Validated},
   = {()},
   = {Calibration microsystems microwave radiometry microwave receivers remote sensing DETECTOR},
   = {19},
  pages = {731--733},
   = {{In this letter a novel design solution in 90 nm CMOS technology is proposed for the IF amplifier, low-pass filter and square-law power detector of a system-on-chip (SoC) microwave radiometer. To minimize the number of off-chip components (just a single capacitor) the IF filter is based on an active configuration, whereas the power detector exploits the MOS transistor non-linearity, i.e., avoiding the need for Schottky diodes. The fabricated IF chip features a sensitivity of 3 mV/nW, a linearity range of about 25 dB around the 60 dBm level, a noise equivalent bandwidth of 58 MHz and a current consumption of only 1.8 mA at 1.2 V supply. The core area is within a rectangle of 220 x 540 mu m. The proposed design solution is also compatible with SiGe BiCMOS processes and can be regarded as a further step toward the realization of microwave radiometric sensors fully integrated on silicon.}},
   = {DOI 10.1109/LMWC.2009.2032018},
  source = {IRIS}
}