22.7-dB Gain-19.7-dBm ICP1dB UWB CMOS LNA

Typeset version

 

TY  - JOUR
  - Pepe, Domenico and Zito, Domenico
  - 2009
  - Unknown
  - IEEE Transactions On Circuits ; Systems Ii
  - 22.7-dB Gain-19.7-dBm ICP1dB UWB CMOS LNA
  - Validated
  - ()
  - 56
  - 9
  - 689
  - 693
  - A fully differential CMOS ultrawideband low-noise amplifier (LNA) is presented. The LNA has been realized in a standard 90-nm CMOS technology and consists of a common-gate stage and two subsequent common-source stages. The common-gate input stage realizes a wideband input impedance matching to the source impedance of the receiver (i.e., the antenna), whereas the two subsequent common-source stages provide a wideband gain by exploiting RLC tanks. The measurements have exhibited a transducer gain of 22.7 dB at 5.2 GHz, a 4.9-GHz-wide B-3dB, an input reflection coefficient lower than -10.5 dB, and an input-referred 1-dB compression point of -19.7 dBm, which are in excellent agreement with the postlayout simulation results, confirming the approach validity and the design robustness.
  - 10.1109/TCSII.2009.2027943
DA  - 2009/NaN
ER  - 
@article{V59430158,
   = {Pepe, Domenico and Zito, Domenico},
   = {2009},
   = {Unknown},
   = {IEEE Transactions On Circuits ; Systems Ii},
   = {22.7-dB Gain-19.7-dBm ICP1dB UWB CMOS LNA},
   = {Validated},
   = {()},
   = {56},
   = {9},
  pages = {689--693},
   = {{A fully differential CMOS ultrawideband low-noise amplifier (LNA) is presented. The LNA has been realized in a standard 90-nm CMOS technology and consists of a common-gate stage and two subsequent common-source stages. The common-gate input stage realizes a wideband input impedance matching to the source impedance of the receiver (i.e., the antenna), whereas the two subsequent common-source stages provide a wideband gain by exploiting RLC tanks. The measurements have exhibited a transducer gain of 22.7 dB at 5.2 GHz, a 4.9-GHz-wide B-3dB, an input reflection coefficient lower than -10.5 dB, and an input-referred 1-dB compression point of -19.7 dBm, which are in excellent agreement with the postlayout simulation results, confirming the approach validity and the design robustness.}},
   = {10.1109/TCSII.2009.2027943},
  source = {IRIS}
}
AUTHORSPepe, Domenico and Zito, Domenico
YEAR2009
MONTHUnknown
JOURNAL_CODEIEEE Transactions On Circuits ; Systems Ii
TITLE22.7-dB Gain-19.7-dBm ICP1dB UWB CMOS LNA
STATUSValidated
TIMES_CITED()
SEARCH_KEYWORD
VOLUME56
ISSUE9
START_PAGE689
END_PAGE693
ABSTRACTA fully differential CMOS ultrawideband low-noise amplifier (LNA) is presented. The LNA has been realized in a standard 90-nm CMOS technology and consists of a common-gate stage and two subsequent common-source stages. The common-gate input stage realizes a wideband input impedance matching to the source impedance of the receiver (i.e., the antenna), whereas the two subsequent common-source stages provide a wideband gain by exploiting RLC tanks. The measurements have exhibited a transducer gain of 22.7 dB at 5.2 GHz, a 4.9-GHz-wide B-3dB, an input reflection coefficient lower than -10.5 dB, and an input-referred 1-dB compression point of -19.7 dBm, which are in excellent agreement with the postlayout simulation results, confirming the approach validity and the design robustness.
PUBLISHER_LOCATION
ISBN_ISSN
EDITION
URL
DOI_LINK10.1109/TCSII.2009.2027943
FUNDING_BODY
GRANT_DETAILS