IRIS publication 59430158
22.7-dB Gain-19.7-dBm ICP1dB UWB CMOS LNA
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TY - JOUR - Pepe, Domenico and Zito, Domenico - 2009 - Unknown - IEEE Transactions On Circuits ; Systems Ii - 22.7-dB Gain-19.7-dBm ICP1dB UWB CMOS LNA - Validated - () - 56 - 9 - 689 - 693 - A fully differential CMOS ultrawideband low-noise amplifier (LNA) is presented. The LNA has been realized in a standard 90-nm CMOS technology and consists of a common-gate stage and two subsequent common-source stages. The common-gate input stage realizes a wideband input impedance matching to the source impedance of the receiver (i.e., the antenna), whereas the two subsequent common-source stages provide a wideband gain by exploiting RLC tanks. The measurements have exhibited a transducer gain of 22.7 dB at 5.2 GHz, a 4.9-GHz-wide B-3dB, an input reflection coefficient lower than -10.5 dB, and an input-referred 1-dB compression point of -19.7 dBm, which are in excellent agreement with the postlayout simulation results, confirming the approach validity and the design robustness. - 10.1109/TCSII.2009.2027943 DA - 2009/NaN ER -
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@article{V59430158, = {Pepe, Domenico and Zito, Domenico}, = {2009}, = {Unknown}, = {IEEE Transactions On Circuits ; Systems Ii}, = {22.7-dB Gain-19.7-dBm ICP1dB UWB CMOS LNA}, = {Validated}, = {()}, = {56}, = {9}, pages = {689--693}, = {{A fully differential CMOS ultrawideband low-noise amplifier (LNA) is presented. The LNA has been realized in a standard 90-nm CMOS technology and consists of a common-gate stage and two subsequent common-source stages. The common-gate input stage realizes a wideband input impedance matching to the source impedance of the receiver (i.e., the antenna), whereas the two subsequent common-source stages provide a wideband gain by exploiting RLC tanks. The measurements have exhibited a transducer gain of 22.7 dB at 5.2 GHz, a 4.9-GHz-wide B-3dB, an input reflection coefficient lower than -10.5 dB, and an input-referred 1-dB compression point of -19.7 dBm, which are in excellent agreement with the postlayout simulation results, confirming the approach validity and the design robustness.}}, = {10.1109/TCSII.2009.2027943}, source = {IRIS} }
Data as stored in IRIS
AUTHORS | Pepe, Domenico and Zito, Domenico | ||
YEAR | 2009 | ||
MONTH | Unknown | ||
JOURNAL_CODE | IEEE Transactions On Circuits ; Systems Ii | ||
TITLE | 22.7-dB Gain-19.7-dBm ICP1dB UWB CMOS LNA | ||
STATUS | Validated | ||
TIMES_CITED | () | ||
SEARCH_KEYWORD | |||
VOLUME | 56 | ||
ISSUE | 9 | ||
START_PAGE | 689 | ||
END_PAGE | 693 | ||
ABSTRACT | A fully differential CMOS ultrawideband low-noise amplifier (LNA) is presented. The LNA has been realized in a standard 90-nm CMOS technology and consists of a common-gate stage and two subsequent common-source stages. The common-gate input stage realizes a wideband input impedance matching to the source impedance of the receiver (i.e., the antenna), whereas the two subsequent common-source stages provide a wideband gain by exploiting RLC tanks. The measurements have exhibited a transducer gain of 22.7 dB at 5.2 GHz, a 4.9-GHz-wide B-3dB, an input reflection coefficient lower than -10.5 dB, and an input-referred 1-dB compression point of -19.7 dBm, which are in excellent agreement with the postlayout simulation results, confirming the approach validity and the design robustness. | ||
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DOI_LINK | 10.1109/TCSII.2009.2027943 | ||
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