TY  - JOUR
  - Zito, D.; Fonte, A.; Pepe, D.;
  - 2009
  - July
  - IEEE Microwave and Wireless Components Letters
  - Microwave Active Inductors
  - Validated
  - ()
  - 19
  - 7
  - 461
  - 463
  - In this letter, the experimental proofs of two microwave active inductors with very high quality factor, namely Differential Boot-Strapped Inductor (D-BSI) and Cross-Coupled Differential Boot-Strapped Inductor (CCD-BSI), are presented. These circuits can be effectively implemented in modern RF-CMOS processes for high-Q equivalent integrated inductors at high frequency. The cases of study at 13 GHz have been designed and implemented in a modern standard 90 nm bulk CMOS process. The measurements on the test-chips show an equivalent inductance close to 3.2 nH with an associated quality factor up to 400 and a wide linearity range..
  - DOI 10.1109/LMWC.2009.2022134
DA  - 2009/07
ER  - 

@article{V720584,
   = {Zito, D. and  Fonte, A. and  Pepe, D. and },
   = {2009},
   = {July},
   = {IEEE Microwave and Wireless Components Letters},
   = {Microwave Active Inductors},
   = {Validated},
   = {()},
   = {19},
   = {7},
  pages = {461--463},
   = {{In this letter, the experimental proofs of two microwave active inductors with very high quality factor, namely Differential Boot-Strapped Inductor (D-BSI) and Cross-Coupled Differential Boot-Strapped Inductor (CCD-BSI), are presented. These circuits can be effectively implemented in modern RF-CMOS processes for high-Q equivalent integrated inductors at high frequency. The cases of study at 13 GHz have been designed and implemented in a modern standard 90 nm bulk CMOS process. The measurements on the test-chips show an equivalent inductance close to 3.2 nH with an associated quality factor up to 400 and a wide linearity range..}},
   = {DOI 10.1109/LMWC.2009.2022134},
  source = {IRIS}
}