IRIS publication 160958264
Direct parameter extraction for hot-carrier reliability simulation
RIS format for Endnote and similar
TY - - Other - Minehane, S,Healy, S,OSullivan, P,McCarthy, K,Mathewson, A,Mason, B - 1997 - October - Direct parameter extraction for hot-carrier reliability simulation - Validated - 1 - () - DEGRADATION MODEL - This work describes the application of a novel direct parameter extraction strategy for the BSIM3v3 MOSFET model to the hot-carrier reliability simulation problem. The use of direct extraction procedures allows a very fast extraction of circuit reliability parameters, with a minimum of measurements, and produces physically relevant parameters. The evolution of the extracted parameters during a hot-carrier stress can then be investigated, and the fit of a power-law model to this evolution can be examined. (C) 1997 Elsevier Science Ltd. - 1437 - 1440 DA - 1997/10 ER -
BIBTeX format for JabRef and similar
@misc{V160958264, = {Other}, = {Minehane, S and Healy, S and OSullivan, P and McCarthy, K and Mathewson, A and Mason, B }, = {1997}, = {October}, = {Direct parameter extraction for hot-carrier reliability simulation}, = {Validated}, = {1}, = {()}, = {DEGRADATION MODEL}, = {{This work describes the application of a novel direct parameter extraction strategy for the BSIM3v3 MOSFET model to the hot-carrier reliability simulation problem. The use of direct extraction procedures allows a very fast extraction of circuit reliability parameters, with a minimum of measurements, and produces physically relevant parameters. The evolution of the extracted parameters during a hot-carrier stress can then be investigated, and the fit of a power-law model to this evolution can be examined. (C) 1997 Elsevier Science Ltd.}}, pages = {1437--1440}, source = {IRIS} }
Data as stored in IRIS
OTHER_PUB_TYPE | Other | ||
AUTHORS | Minehane, S,Healy, S,OSullivan, P,McCarthy, K,Mathewson, A,Mason, B | ||
YEAR | 1997 | ||
MONTH | October | ||
TITLE | Direct parameter extraction for hot-carrier reliability simulation | ||
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STATUS | Validated | ||
PEER_REVIEW | 1 | ||
TIMES_CITED | () | ||
SEARCH_KEYWORD | DEGRADATION MODEL | ||
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ABSTRACT | This work describes the application of a novel direct parameter extraction strategy for the BSIM3v3 MOSFET model to the hot-carrier reliability simulation problem. The use of direct extraction procedures allows a very fast extraction of circuit reliability parameters, with a minimum of measurements, and produces physically relevant parameters. The evolution of the extracted parameters during a hot-carrier stress can then be investigated, and the fit of a power-law model to this evolution can be examined. (C) 1997 Elsevier Science Ltd. | ||
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START_PAGE | 1437 | ||
END_PAGE | 1440 | ||
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