Effect of processing options on ultra-low-loss lead-magnesium-niobium titanate thin films for high density capacitors

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TY  - JOUR
  - Chen, WB,McCarthy, KG,O'Brien, S,Copuroglu, M,Cai, M,Winfield, R,Mathewson, A
  - 2013
  - August
  - Thin Solid Films
  - Effect of processing options on ultra-low-loss lead-magnesium-niobium titanate thin films for high density capacitors
  - Validated
  - ()
  - Loss tangent PMNT Thin films Sol-gel
  - 541
  - 117
  - 120
  - This work studies the impact of annealing temperatures on PMNT (lead-magnesium niobate-lead titanate, Pb(Mg0.33Nb0.67)(0.65)Ti0.35O3) thin films grown on a silicon substrate. The electrical properties of the thin films, such as dielectric constant and loss tangent, are shown to depend strongly on the annealing temperature, with the best electrical properties being achieved at the highest annealing temperature. It is seen that the perovskite phase is highest in the sample annealed at 750 degrees C indicating that a relatively high temperature is necessary for complete transition of PMNT to the perovskite phase. The sample annealed at 400 degrees C exhibits the lowest loss tangent of approximately 0.007 at a frequency of 1 MHz. (C) 2013 Elsevier B.V. All rights reserved.
  - 10.1016/j.tsf.2012.12.092
DA  - 2013/08
ER  - 
@article{V243941364,
   = {Chen,  WB and McCarthy,  KG and O'Brien,  S and Copuroglu,  M and Cai,  M and Winfield,  R and Mathewson,  A },
   = {2013},
   = {August},
   = {Thin Solid Films},
   = {Effect of processing options on ultra-low-loss lead-magnesium-niobium titanate thin films for high density capacitors},
   = {Validated},
   = {()},
   = {Loss tangent PMNT Thin films Sol-gel},
   = {541},
  pages = {117--120},
   = {{This work studies the impact of annealing temperatures on PMNT (lead-magnesium niobate-lead titanate, Pb(Mg0.33Nb0.67)(0.65)Ti0.35O3) thin films grown on a silicon substrate. The electrical properties of the thin films, such as dielectric constant and loss tangent, are shown to depend strongly on the annealing temperature, with the best electrical properties being achieved at the highest annealing temperature. It is seen that the perovskite phase is highest in the sample annealed at 750 degrees C indicating that a relatively high temperature is necessary for complete transition of PMNT to the perovskite phase. The sample annealed at 400 degrees C exhibits the lowest loss tangent of approximately 0.007 at a frequency of 1 MHz. (C) 2013 Elsevier B.V. All rights reserved.}},
   = {10.1016/j.tsf.2012.12.092},
  source = {IRIS}
}
AUTHORSChen, WB,McCarthy, KG,O'Brien, S,Copuroglu, M,Cai, M,Winfield, R,Mathewson, A
YEAR2013
MONTHAugust
JOURNAL_CODEThin Solid Films
TITLEEffect of processing options on ultra-low-loss lead-magnesium-niobium titanate thin films for high density capacitors
STATUSValidated
TIMES_CITED()
SEARCH_KEYWORDLoss tangent PMNT Thin films Sol-gel
VOLUME541
ISSUE
START_PAGE117
END_PAGE120
ABSTRACTThis work studies the impact of annealing temperatures on PMNT (lead-magnesium niobate-lead titanate, Pb(Mg0.33Nb0.67)(0.65)Ti0.35O3) thin films grown on a silicon substrate. The electrical properties of the thin films, such as dielectric constant and loss tangent, are shown to depend strongly on the annealing temperature, with the best electrical properties being achieved at the highest annealing temperature. It is seen that the perovskite phase is highest in the sample annealed at 750 degrees C indicating that a relatively high temperature is necessary for complete transition of PMNT to the perovskite phase. The sample annealed at 400 degrees C exhibits the lowest loss tangent of approximately 0.007 at a frequency of 1 MHz. (C) 2013 Elsevier B.V. All rights reserved.
PUBLISHER_LOCATION
ISBN_ISSN
EDITION
URL
DOI_LINK10.1016/j.tsf.2012.12.092
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