A physical compact model for direct tunneling from NMOS inversion layers

Typeset version

 

TY  - JOUR
  - Clerc,R.;O'Sullivan,P.;McCarthy,K.G.;Ghibaudo,G.;Pananakakis,G.;Mathewson,A.
  - 2001
  - October
  - Solid-State Electronics
  - A physical compact model for direct tunneling from NMOS inversion layers
  - Published
  - ()
  - 45
  - 10
  - 1705
  - 1716
DA  - 2001/10
ER  - 
@article{V352279,
   = {Clerc,R. and O'Sullivan,P. and McCarthy,K.G. and Ghibaudo,G. and Pananakakis,G. and Mathewson,A.},
   = {2001},
   = {October},
   = {Solid-State Electronics},
   = {A physical compact model for direct tunneling from NMOS inversion layers},
   = {Published},
   = {()},
   = {45},
   = {10},
  pages = {1705--1716},
  source = {IRIS}
}
AUTHORSClerc,R.;O'Sullivan,P.;McCarthy,K.G.;Ghibaudo,G.;Pananakakis,G.;Mathewson,A.
YEAR2001
MONTHOctober
JOURNAL_CODESolid-State Electronics
TITLEA physical compact model for direct tunneling from NMOS inversion layers
STATUSPublished
TIMES_CITED()
SEARCH_KEYWORD
VOLUME45
ISSUE10
START_PAGE1705
END_PAGE1716
ABSTRACT
PUBLISHER_LOCATION
ISBN_ISSN
EDITION
URL
DOI_LINK
FUNDING_BODY
GRANT_DETAILS