Improved Modelling and Parameter Extraction for Parasitic BJT Devices in CMOS

Typeset version

 

TY  - CONF
  - MacSweeney,D.; McCarthy,K.; Mathewson,A.; Mason,B.
  - IEE Colloquium on Advanced MOS and Bi-Polar Devices
  - Improved Modelling and Parameter Extraction for Parasitic BJT Devices in CMOS
  - London, U.K.
  - Oral Presentation
  - 1995
  - ()
  - 14-FEB-95
  - 14-FEB-95
  - N/A
DA  - 1995/NaN
ER  - 
@unpublished{V376302,
   = {MacSweeney,D. and  McCarthy,K. and  Mathewson,A. and  Mason,B.},
   = {IEE Colloquium on Advanced MOS and Bi-Polar Devices},
   = {{Improved Modelling and Parameter Extraction for Parasitic BJT Devices in CMOS}},
   = {London, U.K.},
   = {Oral Presentation},
   = {1995},
   = {()},
  month = {Feb},
   = {14-FEB-95},
   = {N/A},
  source = {IRIS}
}
AUTHORSMacSweeney,D.; McCarthy,K.; Mathewson,A.; Mason,B.
TITLEIEE Colloquium on Advanced MOS and Bi-Polar Devices
PUBLICATION_NAMEImproved Modelling and Parameter Extraction for Parasitic BJT Devices in CMOS
LOCATIONLondon, U.K.
CONFERENCE_TYPEOral Presentation
YEAR1995
TIMES_CITED()
PEER_REVIEW
START_DATE14-FEB-95
END_DATE14-FEB-95
ABSTRACT
FUNDED_BYN/A