TY  - JOUR
  - O'Sullivan, JA,McCarthy, KG,Murphy, AC,Murphy, PJ
  - 2006
  - April
  - IEEE Microwave and Wireless Components Letters
  - Investigation into SiGe HBT class E/F PA efficiency at 2 GHz for VDD from 1 to 1.8 V
  - Validated
  - ()
  - class E/F heterojunction bipolar transistor (HBT) RFIC power amplifier (PA) POWER-AMPLIFIER
  - 16
  - 170
  - 172
  - This letter presents a 2-GHz SiGe heterojunction bipolar transistor fully integrated class E/F power amplifier (PA) design operating at low supply voltage. A maximum measured power added efficiency (PAE) of 39% is achieved for a supply voltage of 1.8 V. At I V, a maximum PAE of 36% is measured. The PA was fabricated using an advanced 0.18-mu m BiCMOS process.
  - DOI 10.1109/LMWC.2006.872144
DA  - 2006/04
ER  - 

@article{V43336774,
   = {O'Sullivan,  JA and McCarthy,  KG and Murphy,  AC and Murphy,  PJ },
   = {2006},
   = {April},
   = {IEEE Microwave and Wireless Components Letters},
   = {Investigation into SiGe HBT class E/F PA efficiency at 2 GHz for VDD from 1 to 1.8 V},
   = {Validated},
   = {()},
   = {class E/F heterojunction bipolar transistor (HBT) RFIC power amplifier (PA) POWER-AMPLIFIER},
   = {16},
  pages = {170--172},
   = {{This letter presents a 2-GHz SiGe heterojunction bipolar transistor fully integrated class E/F power amplifier (PA) design operating at low supply voltage. A maximum measured power added efficiency (PAE) of 39% is achieved for a supply voltage of 1.8 V. At I V, a maximum PAE of 36% is measured. The PA was fabricated using an advanced 0.18-mu m BiCMOS process.}},
   = {DOI 10.1109/LMWC.2006.872144},
  source = {IRIS}
}