TY  - JOUR
  - CORDERO, N,MCCARTHY, K,LYDEN, C,KELLY, WM
  - 1993
  - August
  - IEE Proceedings-G Circuits Devices and Systems
  - ELECTRON-DRIFT VELOCITY MODEL FOR SIMULATION OF INGAAS JFETS
  - Validated
  - ()
  - JFETS NUMERICAL MODELING IN0.53GA0.47AS
  - 140
  - 261
  - 263
  - Simulations of InGaAs JFETs were carried out using a two-dimensional numerical simulator. The results show that the electron drift velocity field characteristic is very important in modelling the Id/V ds behaviour of these devices. From comparison with experimental results, we conclude that it is appropriate to use a velocity field dependence function for InGaAs, similar to the drift velocity function used for Si JFETs.
DA  - 1993/08
ER  - 

@article{V43340440,
   = {CORDERO,  N and MCCARTHY,  K and LYDEN,  C and KELLY,  WM },
   = {1993},
   = {August},
   = {IEE Proceedings-G Circuits Devices and Systems},
   = {ELECTRON-DRIFT VELOCITY MODEL FOR SIMULATION OF INGAAS JFETS},
   = {Validated},
   = {()},
   = {JFETS NUMERICAL MODELING IN0.53GA0.47AS},
   = {140},
  pages = {261--263},
   = {{Simulations of InGaAs JFETs were carried out using a two-dimensional numerical simulator. The results show that the electron drift velocity field characteristic is very important in modelling the Id/V ds behaviour of these devices. From comparison with experimental results, we conclude that it is appropriate to use a velocity field dependence function for InGaAs, similar to the drift velocity function used for Si JFETs.}},
  source = {IRIS}
}