TY  - 
  - Articles
  - Chen, WB, McCarthy, KG, Mathewson, A
  - 2009
  - September
  - Practical Considerations For Measurements of Test Structures For Dielectric Characterization
  - Author
  - Validated
  - 0
  - ()
  - This paper presents a method for measuring the complex permittivity of dielectric material on a dielectric/metal stack. A series of circular capacitor and transmission line test structures are designed and fabricated. The methodology has been verified by measuring the dielectric constant of a known SiO2 layer using Capacitance-Voltage (C-V) measurement and scattering parameter (S-parameter) measurements. The combination of C-V measurement and S-parameter measurement is shown to be suitable for characterization of dielectric material on the complex cross-sections..
  - 221
  - 225
DA  - 2009/09
ER  - 

@article{V720818,
   = {Articles},
   = {Chen,  WB and  McCarthy,  KG and  Mathewson,  A },
   = {2009},
   = {September},
   = {Practical Considerations For Measurements of Test Structures For Dielectric Characterization},
   = {Author},
   = {Validated},
   = {0},
   = {()},
   = {{This paper presents a method for measuring the complex permittivity of dielectric material on a dielectric/metal stack. A series of circular capacitor and transmission line test structures are designed and fabricated. The methodology has been verified by measuring the dielectric constant of a known SiO2 layer using Capacitance-Voltage (C-V) measurement and scattering parameter (S-parameter) measurements. The combination of C-V measurement and S-parameter measurement is shown to be suitable for characterization of dielectric material on the complex cross-sections..}},
  pages = {221--225},
  source = {IRIS}
}