TY  - 
  - Other
  - O'Sullivan, JA, Chen, WB, McCarthy, KG, Crean, GM
  - 2008
  - August
  - Advanced Test Structure Design For Dielectric Characterisation of Novel High-K Materials
  - Validated
  - 1
  - ()
  - The extremely high level of integration currently required within the wireless industry poses significant challenges at all technology steps from materials through processing to packaging. Capacitor design is a very important element of this technology integration challenge. Recently there has been strong interest in the use of PMNT (Pb(Mg, Nb)TiO3) as a thin-film layer in semiconductor processes [1]. The high dielectric constant of PMNT makes it an attractive material for the fabrication of MIM (Metal/Insulator/Metal) decoupling capacitors. Before PMNT can be used in conjunction with a modern Si process for capacitor design the PMNT layer must be accurately characterised. This paper addresses the issue of thin-film characterisation through wafer-probe measurements and electromagnetic simulation (EM) of coplanar waveguides. Based on the results obtained a design methodology for optimum test structure layout is presented..
  - 180
  - 184
DA  - 2008/08
ER  - 

@misc{V724050,
   = {Other},
   = {O'Sullivan,  JA and  Chen,  WB and  McCarthy,  KG and  Crean,  GM },
   = {2008},
   = {August},
   = {Advanced Test Structure Design For Dielectric Characterisation of Novel High-K Materials},
   = {Validated},
   = {1},
   = {()},
   = {{The extremely high level of integration currently required within the wireless industry poses significant challenges at all technology steps from materials through processing to packaging. Capacitor design is a very important element of this technology integration challenge. Recently there has been strong interest in the use of PMNT (Pb(Mg, Nb)TiO3) as a thin-film layer in semiconductor processes [1]. The high dielectric constant of PMNT makes it an attractive material for the fabrication of MIM (Metal/Insulator/Metal) decoupling capacitors. Before PMNT can be used in conjunction with a modern Si process for capacitor design the PMNT layer must be accurately characterised. This paper addresses the issue of thin-film characterisation through wafer-probe measurements and electromagnetic simulation (EM) of coplanar waveguides. Based on the results obtained a design methodology for optimum test structure layout is presented..}},
  pages = {180--184},
  source = {IRIS}
}