Dr Badal Mondal is a Postdoctoral Researcher in the Photonics Theory Group at Tyndall National Institute. He holds a PhD in Physics from Philipps University Marburg, Germany.

A computational condensed matter physicist, Dr Mondal specialises in theoretical modeling and simulation of carrier transport and optical properties in III-V compound semiconductors. His research contributes to advancing energy-efficient and high-performance semiconductor technologies for future (opto-)electronic devices.

His current research at Tyndall focuses on developing multiscale simulation frameworks that integrate atomic-scale modeling, device-level simulations, and machine learning techniques. This work is aimed at the design and optimisation of next-generation high-electron mobility transistors (HEMTs) based on aluminum-rich, wide-bandgap III-Nitride semiconductors — devices tailored for high-power, high-frequency applications.

Dr Mondal's technical expertise includes first-principles calculations based on density functional theory (DFT), technology computer-aided design (TCAD) device simulations, and transport modeling. His work emphasises rigorous model and software development, and is conducted in close collaboration with experimental partners for device fabrication and testing.

• Developing multiscale simulation frameworks for semiconductor materials [atomistic first‑principles calculations (DFT), device‑scale technology computer‑aided design (TCAD), and data‑driven / machine‑learning approaches]
• Theoretical modeling and simulation of carrier transport and optical properties in III–V (e.g., AlGaN, GaAsP) and IV–IV (e.g., SiGe, SiSn) alloy semiconductors.
• Device characteristics simulation of wide‑bandgap III‑Nitride-based high‑power and high‑frequency transistors, such as high‑electron mobility transistors (HEMTs) and polarization field‑effect transistors (PolFETs).
• Polarization effects, heterostructure engineering, and transport phenomena in wide‑bandgap semiconductor devices

• Research Ireland - EPSRC joint funding (Grant no.: 23/EPSRC/3888, Project: Aluminium-Rich Nitride Electronics (ARNE))