Jun Lin received her B.E. degree (first-class honors) in Electrical and Electronic Engineering from University College Cork (UCC), Cork, Ireland, and the bachelor’s degree from Guilin University of Electronic Technology (GUET), Guilin, China, in 2010 based on a joint program between UCC and GUET. Jun Lin started her PhD in January 2011 at Tyndall National Institute, UCC. Her research was focused on the electrical characterization of electrically active defects (including interface defects and border traps) and the passivation of these defects in high-k/III–V metal-oxide-semiconductor (MOS) capacitors. She successfully defended her thesis in December 2016. She started her postdoctoral research in February 2017 at Tyndall National Institute, working on large area growth of two-dimensional transition metal dichalcogenides (TMDs) using chemical vapor deposition (CVD) and atomic layer deposition (ALD), and the electrical characterization of the TMD films and TMD-based electronic devices. Her work has been extended to ALD of metal oxides and TMDs for photoelectrochemical cell (PEC) applications. Jun Lin is now the lab manager of Tyndall 300 mm Applied Materials ALD system and the Tyndall Hall Measurement System equipment responsible.

CVD, ALD, TMDs, high-k oxides, III-V materials, MOSFETs, PEC