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Dive into the research topics where Niamh Waldron is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies
Vais, A., Hsu, B., Syshchyk, O., Yu, H., Alian, A., Mols, Y., Kodandarama, K. V., Kunert, B., Waldron, N., Simoen, E. & Collaert, N., Mar 2021, 2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 9405095. (IEEE International Reliability Physics Symposium Proceedings; vol. 2021-March).Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review
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Application of an Sb Surfactant in InGaAs Nano-ridge Engineering on 300 mm Silicon Substrates
Kunert, B., Alcotte, R., Mols, Y., Baryshnikova, M., Waldron, N., Collaert, N. & Langer, R., 3 Mar 2021, In: Crystal Growth and Design. 21, 3, p. 1657-1665 9 p.Research output: Contribution to journal › Article › peer-review
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DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates
Yadav, S., Vais, A., Elkashlan, R. Y., Witters, L., Vondkar, K., Mols, Y., Walke, A., Yu, H., Alcotte, R., Ingels, M., Wambacq, P., Langer, R., Kunert, B., Waldron, N., Parvais, B. & Collaert, N., 10 Jan 2021, EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., p. 89-92 4 p. 9337489. (EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference).Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review
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Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C
Agopian, P. G. D., Carmo, G. J., Martino, J. A., Simoen, E., Peralagu, U., Parvais, B., Waldron, N. & Collaert, N., Nov 2021, In: Solid-State Electronics. 185, 108091.Research output: Contribution to journal › Article › peer-review
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Monolithic integration of nano-ridge engineered InGaP/GaAs HBTs on 300 mm Si substrate
Mols, Y., Vais, A., Yadav, S., Witters, L., Vondkar, K., Alcotte, R., Baryshnikova, M., Boccardi, G., Waldron, N., Parvais, B., Collaert, N., Langer, R. & Kunert, B., 1 Oct 2021, In: Materials. 14, 19, 5682.Research output: Contribution to journal › Article › peer-review
Open Access
Press/Media
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Centrifuger: lossless compression of microbial genomes for efficient and accurate metagenomic sequence classification
25/04/24
1 item of Media coverage
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US Patent Issued to IMEC VZW on May 9 for "Integration of a III-V construction on a group IV substrate" (Belgian Inventors)
10/05/23
1 item of Media coverage
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US Patent Issued to IMEC vzw on May 3 for "Cointegration of gallium nitride and silicon" (Belgian Inventors)
4/05/22
1 item of Media coverage
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US Patent Issued to IMEC VZW on Dec. 7 for "Integration of a III-V device on a Si substrate" (Belgian Inventors)
8/12/21
1 item of Media coverage
Press/Media
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US Patent Issued to IMEC vzw on May 11 for "Integrated circuit including at least one nano-ridge transistor" (Belgian Inventors)
12/05/21
1 item of Media coverage
Press/Media