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Dive into the research topics where Paolo La Torraca is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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A Comparative Analysis of Direct Leakage Current Compensation and Positive-Up-Negative-Down in the Characterization of Leaky Ferroelectric Structures
Tan, T. T., Wu, T. L., Liu, H. Y., Yu, C. Y., Grenouillet, L., Torraca, P. L., Padovani, A., Puglisi, F. M., Raghavan, N. & Pey, K. L., 2025, 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025. Institute of Electrical and Electronics Engineers Inc., (9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025).Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review
Open Access -
Correction to: Dielectric breakdown of oxide films in electronic devices (Nature Reviews Materials, (2024), 9, 9, (607-627), 10.1038/s41578-024-00702-0)
Padovani, A., La Torraca, P., Strand, J., Larcher, L. & Shluger, A. L., Jan 2025, In: Nature Reviews Materials. 10, 1, p. 79 1 p.Research output: Contribution to journal › Comment/Debate
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Methodology and Test Structures for Studying β-Ga2O3 Dielectric and Contact Interfaces
Gruszecki, A. A., Roy, J., Agrawal, K. S., La Torraca, P., Cherkaoui, K., Hurley, P. K., Wallace, R. M. & Young, C. D., 2025, 2025 IEEE 37th International Conference on Microelectronic Test Structures (ICMTS).Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review
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Microscopic Analysis of Degradation and Breakdown Kinetics in HfO2Gate Dielectric after Ions Irradiation
Padovani, A., La Torraca, P., Aguirre, F. L., Ranjan, A., Raghavan, N., Pey, K. L., Palumbo, F. & Puglisi, F. M., 17 Sep 2025, In: ACS Applied Materials and Interfaces. 17, 37, p. 52814-52825 12 p.Research output: Contribution to journal › Article › peer-review
Open Access -
The characterization and understanding of electrically active defects in the HfO2/β-Ga2O3(2̄01) MOS system
Agrawal, K. S., La Torraca, P., Valentijn, J., Hawkins, R., Gruszecki, A. A., Roy, J., Lebedev, V., Jones, L., Wallace, R. M., Young, C. D., Hurley, P. K. & Cherkaoui, K., 1 Aug 2025, In: APL Materials. 13, 8, 081116.Research output: Contribution to journal › Article › peer-review
Open Access
Press/Media
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Investigators at University of Modena and Reggio Emilia Detail Findings in Materials Science (Dielectric Breakdown of Oxide Films In Electronic Devices)
2/09/24
1 item of Media coverage
Press/Media