Samuel Aldana is a physicist with a passion for developing physical simulators and exploring the physics of resistive switching and memristors. With a master's in Nanotechnology and a Ph.D. in Information Technology, he has conducted research at top universities in Germany, Spain and Ireland. Specifically, Dr. Aldana has developed kinetic Monte Carlo physical simulators for Valence Change Memories, Thermochemical Memories, Conductive Bridge Memories, 2D planar memristors, and Transition Metal Dichalcogenides crystal growth, with several publications on the topics. Notably, his simulators provide detailed insights into the resistive switching kinetics, variability, thermal degradation phenomena, and optimization routes for these devices. His research interests also extend to exploring the applications of 2D materials and memristors in areas such as storage memories and neuromorphic devices.