Education, qualification

06.2010 - Candidate of physico-mathematical sciences (PhD) thesis: Optically pumped lasers based on GaN epitaxial layers and InGaN/GaN quantum well heterostructures on Si(111)‑substrates (Stepanov Institute of Physics, NAS of Belarus)

2000-2003 - Post-graduate courses at the Researchers Training Institute of the National Academy of Sciences of Belarus. Relevant modules include: Laser physics (specialisation), Computer science, Philosophy, English, and Belarusian – candidate’s exam passed.

1995-2000 - Belarusian State University, physics department, Distinction diploma. Speciality: physicist, specialisation: physicist, teacher of physics and computer sciences. Relevant modulus include: Higher mathematics (mathematical analysis, analytical geometry, differential equation, bases of vector and tensor analysis, probability theory and mathematical statistics), General physics (mechanics, molecular physics, electricity and magnetism, atomic and nuclear physics, optics), Mathematical physics, Thermodynamics and statistical physics, Electrodynamics, Theoretical mechanics, Quantum mechanics, Bases of relativity theory, Astronomy, Computer sciences (Bases of assembler, Pascal (Delphi), Gupta SQLWindows), Methods of teaching of physics, Methods of teaching of computer sciences, General courses (Philosophy, History, Pedagogy, Economics, English, etc. )

Work experience

11.2011 - to date: Researcher at Tyndall National Institute, UCC

08.2003-11.2011: Junior scientist at Stepanov Institute of Physics of NAS of Belarus

08-11.2000: Probationer-researcher at Stepanov Institute of Physics of NAS of Belarus

I am specialised in MOCVD growth (10+ years of experience), optical (20+ years) and structural (10+ years) characterisation and device fabrication of III-Nitride materials (InAlGaN). My PhD study was on radiative recombination and optical gain mechanisms in GaN epitaxial layers and InGaN/GaN QWs grown on silicon for which lasing at optical excitation was demonstrated for the first time. My post PhD experience included InAlN-based near UV LEDs, 250 nm AlGaN-based DUV LEDs, GaN nanocolumn-based Shottky diodes, AlN templates by nanopatterning and regrowth. In recent years, my main focus is on a novel fabrication approach for arrays of GaN nanocolumn- and GaN µ-pyramid-based µ-LEDs to be used as pixels in µ-displays for mixed and virtual reality applications.