15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
- J. Mitard
- , L. Witters
- , R. Loo
- , S. H. Lee
- , J. W. Sun
- , J. Franco
- , L. Ragnarsson
- , A. Brand
- , X. Lu
- , N. Yoshida
- , G. Eneman
- , D. P. Brunco
- , M. Vorderwestner
- , P. Storck
- , A. P. Milenin
- , A. Hikavyy
- , N. Waldron
- , P. Favia
- , D. Vanhaeren
- , A. Vanderheyden
Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review