Abstract
Modifications to the epitaxial growth of Vertical-Cavity Surface-Emitting Laser (VCSEL) material have recently led to improved characteristics. By offsetting the quantum-well gain peak from the cavity mode, and implementing lower barrier p-type Al0.67Ga0.33As/GaAs DBR mirrors with parabolic interface gradings, better high-temperature operation and lower voltages have been achieved. These effects combine to yield a peak wall plug efficiency of 17.3% for room temperature, CW operation.
| Original language | English |
|---|---|
| Pages (from-to) | 31-33 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 6 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 1994 |
| Externally published | Yes |