TY - GEN
T1 - 400V SiC in Next-Generation 3-Level Flying Capacitor Bridgeless Totem-pole PFC
AU - Beinarys, Rytis
AU - O'Driscoll, Seamus
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - This paper proposes the design and implementation of a 3-level flying capacitor bridgeless totem-pole power factor correction (3L-FC-BTP-PFC) converter utilizing recently launched 400V Silicon Carbide (SiC) devices. It outlines key considerations and design challenges associated with adopting 400V SiC devices in place of a low-voltage series-connected silicon (Si) MOSFET arrangement. The proposed topology combines the benefits of a bridgeless totem-pole arrangement with the advantages of SiC technology. This combination enables superior performance in terms of higher efficiency, reduced gate driver complexity, increased system robustness, and enhanced power density. A comprehensive overview of the converter's operation, gate driver design, proposed power stage architecture, along with corresponding real-world experimental test results is presented.
AB - This paper proposes the design and implementation of a 3-level flying capacitor bridgeless totem-pole power factor correction (3L-FC-BTP-PFC) converter utilizing recently launched 400V Silicon Carbide (SiC) devices. It outlines key considerations and design challenges associated with adopting 400V SiC devices in place of a low-voltage series-connected silicon (Si) MOSFET arrangement. The proposed topology combines the benefits of a bridgeless totem-pole arrangement with the advantages of SiC technology. This combination enables superior performance in terms of higher efficiency, reduced gate driver complexity, increased system robustness, and enhanced power density. A comprehensive overview of the converter's operation, gate driver design, proposed power stage architecture, along with corresponding real-world experimental test results is presented.
KW - bridgeless totem-pole (BTP)
KW - flying capacitor multilevel (FCML)
KW - hybrid flying capacitor voltage control
KW - low-cost isolated gate driver
KW - power factor correction (PFC)
KW - silicon carbide (SiC)
UR - https://www.scopus.com/pages/publications/105004817549
U2 - 10.1109/APEC48143.2025.10977447
DO - 10.1109/APEC48143.2025.10977447
M3 - Conference proceeding
AN - SCOPUS:105004817549
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 2009
EP - 2013
BT - APEC 2025 - 14th Annual IEEE Applied Power Electronics Conference and Exposition
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 14th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2025
Y2 - 16 March 2025 through 20 March 2025
ER -