500 μm diameter CMOS compatible avalanche photodiodes with 500 MHz bandwidth

A. M. Moloney; A. P. Morrison

doi:10.1049/el:20061455

500 μm diameter CMOS compatible avalanche photodiodes with 500 MHz bandwidth

A. M. Moloney
, A. P. Morrison

School of Engineering and Architecture

Technological University Dublin

Research output: Contribution to journal › Article › peer-review

Abstract

Novel silicon-on-insulator, large area (500m diameter), CMOS avalanche photodiodes for use with plastic optical fibre are presented. Patterns have been formed on the devices to reduce junction capacitance. Measurements on the patterned devices, at 650nm and 26V reverse bias, revealed bandwidths of >500MHz.

Original language	English
Pages (from-to)	819-820
Number of pages	2
Journal	Electronics Letters
Volume	42
Issue number	14
DOIs	https://doi.org/10.1049/el:20061455
Publication status	Published - 6 Jul 2006

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title = "500 μm diameter CMOS compatible avalanche photodiodes with 500 MHz bandwidth",

abstract = "Novel silicon-on-insulator, large area (500m diameter), CMOS avalanche photodiodes for use with plastic optical fibre are presented. Patterns have been formed on the devices to reduce junction capacitance. Measurements on the patterned devices, at 650nm and 26V reverse bias, revealed bandwidths of >500MHz.",

author = "Moloney, \{A. M.\} and Morrison, \{A. P.\}",

year = "2006",

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AU - Morrison, A. P.

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N2 - Novel silicon-on-insulator, large area (500m diameter), CMOS avalanche photodiodes for use with plastic optical fibre are presented. Patterns have been formed on the devices to reduce junction capacitance. Measurements on the patterned devices, at 650nm and 26V reverse bias, revealed bandwidths of >500MHz.

AB - Novel silicon-on-insulator, large area (500m diameter), CMOS avalanche photodiodes for use with plastic optical fibre are presented. Patterns have been formed on the devices to reduce junction capacitance. Measurements on the patterned devices, at 650nm and 26V reverse bias, revealed bandwidths of >500MHz.

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U2 - 10.1049/el:20061455

DO - 10.1049/el:20061455

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SP - 819

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JO - Electronics Letters

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ER -

500 μm diameter CMOS compatible avalanche photodiodes with 500 MHz bandwidth

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