A 10 Gb/s linear burst-mode receiver in 0.25 μm SiGe:C BiCMOS

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Abstract

This paper presents a 10 Gb/s burst-mode receiver (BMRx) that was designed to have high linearity over a > 20dB (optical power) dynamic range. Such a linear BMRx (LBMRx) enables electronic dispersion compensation or multilevel modulation formats in bursty optical links. The LBMRx consists of a variable-gain transimpedance amplifier and a variable-gain post-amplifier. A gain from 47 dB Ω to 85 dB Ω was achieved on a single die. Fast (< 50ns) gain adjustment is achieved using replica based, feedforward automatic gain control and peak detectors, which are reset between bursts using an external reset signal. A sensitivity of-23.2 dBm at a bit-error rate of 1.1× 10 -3 was measured using a PIN photodiode. A 0.5 dB penalty is incurred if a 0 dBm burst precedes the burst under consideration; hence the LBMRx can support a dynamic range of 22.7 dB. A 150 ns preamble was used, the guard time between bursts was 25.6 ns. Total harmonic distortion (at 250 MHz) less than 5% was measured for an optical power ranging from-25 dBm to 0 dBm. The chip was designed in a 0.25 μ m SiGe:C BiCMOS technology, has an area of 2.4×, 2.1 mm2 and consumes 650 mW from 2.5 V/3.3 V supplies.

Original languageEnglish
Article number6363488
Pages (from-to)381-390
Number of pages10
JournalIEEE Journal of Solid-State Circuits
Volume48
Issue number2
DOIs
Publication statusPublished - 2013

Keywords

  • BiCMOS integrated circuits
  • burst-mode receiver
  • communication systems
  • optical receivers
  • transimpedance amplifier
  • variable gain amplifier

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