A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

Samuel Aldana; Pedro Garcia Fernandez; Alberto  Rodríguez-Fernández; Rocio Romero-Zaliz; Mireia Bargalló Gonzalez; Francisco Jiménez-Molinos; Francesca Campabadal; Francisco Gómez-Campos; Juan Bautista Roldán Aranda

doi:10.1088/1361-6463/aa7939

A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

Samuel Aldana
, Pedro Garcia Fernandez
, Alberto Rodríguez-Fernández
, Rocio Romero-Zaliz
, Mireia Bargalló Gonzalez
, Francisco Jiménez-Molinos
, Francesca Campabadal
, Francisco Gómez-Campos
, Juan Bautista Roldán Aranda

Research output: Contribution to journal › Article › peer-review

Abstract

A new RRAM simulation tool based on a 3D kinetic Monte Carlo algorithm has been implemented. The redox reactions and migration of cations are developed taking into consideration the temperature and electric potential 3D distributions within the device dielectric at each simulation time step. The filamentary conduction has been described by obtaining the percolation paths formed by metallic atoms. Ni/HfO 2/Si-n+ unipolar devices have been fabricated and measured. The different experimental characteristics of the devices under study have been reproduced with accuracy by means of simulations. The main physical variables can be extracted at any simulation time to clarify the physics behind resistive switching; in particular, the final conductive filament shape can be studied in detail.

Original language	English
Pages (from-to)	335103
Journal	Journal of Physics D: Applied Physics
Volume	50
Issue number	33
DOIs	https://doi.org/10.1088/1361-6463/aa7939
Publication status	Published - 23 Aug 2017
Externally published	Yes

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10.1088/1361-6463/aa7939

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Aldana, S., Garcia Fernandez, P., Rodríguez-Fernández, A., Romero-Zaliz, R., Bargalló Gonzalez, M., Jiménez-Molinos, F., Campabadal, F., Gómez-Campos, F., & Roldán Aranda, J. B. (2017). A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs. Journal of Physics D: Applied Physics, 50(33), 335103. https://doi.org/10.1088/1361-6463/aa7939

@article{d997217d65134d9e96da72962669d9c9,

title = "A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs",

abstract = "A new RRAM simulation tool based on a 3D kinetic Monte Carlo algorithm has been implemented. The redox reactions and migration of cations are developed taking into consideration the temperature and electric potential 3D distributions within the device dielectric at each simulation time step. The filamentary conduction has been described by obtaining the percolation paths formed by metallic atoms. Ni/HfO 2/Si-n+ unipolar devices have been fabricated and measured. The different experimental characteristics of the devices under study have been reproduced with accuracy by means of simulations. The main physical variables can be extracted at any simulation time to clarify the physics behind resistive switching; in particular, the final conductive filament shape can be studied in detail.",

author = "Samuel Aldana and \{Garcia Fernandez\}, Pedro and Alberto Rodr{\'i}guez-Fern{\'a}ndez and Rocio Romero-Zaliz and \{Bargall{\'o} Gonzalez\}, Mireia and Francisco Jim{\'e}nez-Molinos and Francesca Campabadal and Francisco G{\'o}mez-Campos and \{Rold{\'a}n Aranda\}, \{Juan Bautista\}",

year = "2017",

month = aug,

day = "23",

doi = "10.1088/1361-6463/aa7939",

language = "English",

volume = "50",

pages = "335103",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "Institute of Physics",

number = "33",

}

Aldana, S, Garcia Fernandez, P, Rodríguez-Fernández, A, Romero-Zaliz, R, Bargalló Gonzalez, M, Jiménez-Molinos, F, Campabadal, F, Gómez-Campos, F & Roldán Aranda, JB 2017, 'A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs', Journal of Physics D: Applied Physics, vol. 50, no. 33, pp. 335103. https://doi.org/10.1088/1361-6463/aa7939

TY - JOUR

T1 - A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

AU - Aldana, Samuel

AU - Garcia Fernandez, Pedro

AU - Rodríguez-Fernández, Alberto

AU - Romero-Zaliz, Rocio

AU - Bargalló Gonzalez, Mireia

AU - Jiménez-Molinos, Francisco

AU - Campabadal, Francesca

AU - Gómez-Campos, Francisco

AU - Roldán Aranda, Juan Bautista

PY - 2017/8/23

Y1 - 2017/8/23

N2 - A new RRAM simulation tool based on a 3D kinetic Monte Carlo algorithm has been implemented. The redox reactions and migration of cations are developed taking into consideration the temperature and electric potential 3D distributions within the device dielectric at each simulation time step. The filamentary conduction has been described by obtaining the percolation paths formed by metallic atoms. Ni/HfO 2/Si-n+ unipolar devices have been fabricated and measured. The different experimental characteristics of the devices under study have been reproduced with accuracy by means of simulations. The main physical variables can be extracted at any simulation time to clarify the physics behind resistive switching; in particular, the final conductive filament shape can be studied in detail.

AB - A new RRAM simulation tool based on a 3D kinetic Monte Carlo algorithm has been implemented. The redox reactions and migration of cations are developed taking into consideration the temperature and electric potential 3D distributions within the device dielectric at each simulation time step. The filamentary conduction has been described by obtaining the percolation paths formed by metallic atoms. Ni/HfO 2/Si-n+ unipolar devices have been fabricated and measured. The different experimental characteristics of the devices under study have been reproduced with accuracy by means of simulations. The main physical variables can be extracted at any simulation time to clarify the physics behind resistive switching; in particular, the final conductive filament shape can be studied in detail.

UR - http://dx.doi.org/10.1088/1361-6463/aa7939

U2 - 10.1088/1361-6463/aa7939

DO - 10.1088/1361-6463/aa7939

M3 - Article

SN - 0022-3727

VL - 50

SP - 335103

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 33

ER -

A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

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