A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide- semiconductor structures

Lee A. Walsh; Greg Hughes; Paul K. Hurley; Jun Lin; Joseph C. Woicik

doi:10.1063/1.4770380

A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO₂/Si(100) metal-oxide- semiconductor structures

Lee A. Walsh
, Greg Hughes
, Paul K. Hurley
, Jun Lin
, Joseph C. Woicik

Research output: Contribution to journal › Article › peer-review

Abstract

Combined hard x-ray photoelectron spectroscopy (HAXPES) and electrical characterisation measurements on identical Si based metal-oxide-semiconductor structures have been performed. The results obtained indicate that surface potential changes at the Si/SiO₂ interface due to the presence of a thin Al or Ni gate layer can be detected with HAXPES. Changes in the Si/SiO ₂ band bending at zero gate voltage and the flat band voltage for the case of Al and Ni gate layers derived from the silicon core levels shifts observed in the HAXPES spectra are in agreement with values derived from capacitance-voltage measurements.

Original language	English
Article number	241602
Journal	Applied Physics Letters
Volume	101
Issue number	24
DOIs	https://doi.org/10.1063/1.4770380
Publication status	Published - 10 Dec 2012

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https://hdl.handle.net/10468/4292Licence: CC BY-NC-ND

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title = "A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide- semiconductor structures",

abstract = "Combined hard x-ray photoelectron spectroscopy (HAXPES) and electrical characterisation measurements on identical Si based metal-oxide-semiconductor structures have been performed. The results obtained indicate that surface potential changes at the Si/SiO2 interface due to the presence of a thin Al or Ni gate layer can be detected with HAXPES. Changes in the Si/SiO 2 band bending at zero gate voltage and the flat band voltage for the case of Al and Ni gate layers derived from the silicon core levels shifts observed in the HAXPES spectra are in agreement with values derived from capacitance-voltage measurements.",

author = "Walsh, \{Lee A.\} and Greg Hughes and Hurley, \{Paul K.\} and Jun Lin and Woicik, \{Joseph C.\}",

year = "2012",

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doi = "10.1063/1.4770380",

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volume = "101",

journal = "Applied Physics Letters",

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AU - Walsh, Lee A.

AU - Hughes, Greg

AU - Hurley, Paul K.

AU - Lin, Jun

AU - Woicik, Joseph C.

PY - 2012/12/10

Y1 - 2012/12/10

N2 - Combined hard x-ray photoelectron spectroscopy (HAXPES) and electrical characterisation measurements on identical Si based metal-oxide-semiconductor structures have been performed. The results obtained indicate that surface potential changes at the Si/SiO2 interface due to the presence of a thin Al or Ni gate layer can be detected with HAXPES. Changes in the Si/SiO 2 band bending at zero gate voltage and the flat band voltage for the case of Al and Ni gate layers derived from the silicon core levels shifts observed in the HAXPES spectra are in agreement with values derived from capacitance-voltage measurements.

AB - Combined hard x-ray photoelectron spectroscopy (HAXPES) and electrical characterisation measurements on identical Si based metal-oxide-semiconductor structures have been performed. The results obtained indicate that surface potential changes at the Si/SiO2 interface due to the presence of a thin Al or Ni gate layer can be detected with HAXPES. Changes in the Si/SiO 2 band bending at zero gate voltage and the flat band voltage for the case of Al and Ni gate layers derived from the silicon core levels shifts observed in the HAXPES spectra are in agreement with values derived from capacitance-voltage measurements.

UR - https://www.scopus.com/pages/publications/84871305900

U2 - 10.1063/1.4770380

DO - 10.1063/1.4770380

M3 - Article

AN - SCOPUS:84871305900

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 241602

ER -

A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO₂/Si(100) metal-oxide- semiconductor structures

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