@inproceedings{5df2aa27ddba400190647be2768d4d02,
title = "A Comparative Analysis of Direct Leakage Current Compensation and Positive-Up-Negative-Down in the Characterization of Leaky Ferroelectric Structures",
abstract = "Techniques such as the Positive-Up-Negative-Down (PUND) and Dynamic Leakage Current Compensation (DLCC) are often used to isolate the Ferroelectric (FE) switching component from other current artifacts during the characterization of FE memory devices, with DLCC being able to compensate for a wider range of measurement artifacts. An evaluation of both techniques was carried out in the context of leaky and non-leaky samples. However, it was observed that both PUND and DLCC were unable to fully compensate for large amounts of leakage currents in very leaky samples (<1 A/cm2 at 3 MV/cm applied voltage). In doing so, this work aims to showcase some of the resultant signatures of inadequate compensation in the I-V plots and P-V hysteresis loops, highlighting the need for more sophisticated current compensation methodologies.",
keywords = "Artifacts, Characterization, Dynamic leakage current compensation, Ferroelectric, HZO, Positive-Up-Negative-Down",
author = "Tan, \{Tiang Teck\} and Wu, \{Tian Li\} and Liu, \{Hsien Yang\} and Yu, \{Chen Yu\} and Laurent Grenouillet and Torraca, \{Paolo La\} and Andrea Padovani and Puglisi, \{Francesco Maria\} and Nagarajan Raghavan and Pey, \{Kin Leong\}",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025 ; Conference date: 09-03-2025 Through 12-03-2025",
year = "2025",
doi = "10.1109/EDTM61175.2025.11040726",
language = "English",
series = "9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "9th IEEE Electron Devices Technology and Manufacturing Conference",
address = "United States",
}