Abstract
One of the main requirements for thermophotovoltaic (TPV) systems powered by fuel combustion is a low level of pollution. To achieve this, low combustion temperatures are needed. The most efficient narrow band emitters emit at long wavelengths, necessitating low band gap cells. Erbium oxide emits around 1500nm and we report an InGaAs p-n cell which is well matched to this spectrum. Two more suitable emitters are thulium oxide and holmium oxide, which emit around 1700nm and 1950nm respectively, beyond the band gap of lattice matched InGaAs. To absorb this emission, lattice mismatched materials must be used. The technique of strain compensation can prevent the creation of dislocations within the structure. We present results of a strain-compensated InGaAs/lnGaAs Quantum Well Cell (QWC) which demonstrates the success of this structure in allowing wavelength response to be extended whilst displaying a lower dark current.
| Original language | English |
|---|---|
| Pages (from-to) | 1058-1061 |
| Number of pages | 4 |
| Journal | Conference Record of the IEEE Photovoltaic Specialists Conference |
| Publication status | Published - 2002 |
| Event | 29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 19 May 2002 → 24 May 2002 |
