A comparative study of the adsorption of CH2Cl2, CH3I and CH2I2 on GaAs(100) surfaces at 300 K

S. M. Francis; P. A. Goulding; M. E. Pemble

doi:10.1016/0042-207X(90)93819-5

A comparative study of the adsorption of CH₂Cl₂, CH₃I and CH₂I₂ on GaAs(100) surfaces at 300 K

S. M. Francis
, P. A. Goulding
, M. E. Pemble

Research output: Contribution to journal › Article › peer-review

Abstract

It is demonstrated that CH₂Cl₂, CH₃l and CH₂l₂ adsorb on a clean As-rich GaAs(100) substrate surface at 300 K. The reactivity of these species towards the GaAs(100) surface follows the order CH₂Cl₂ < CH₃l < CH₂l₂ with the l-containing species producing marked As-depletion. The implications of these data for the design of laser-assisted, selective-area etching processes are discussed.

Original language	English
Pages (from-to)	909-911
Number of pages	3
Journal	Vacuum
Volume	41
Issue number	4-6
DOIs	https://doi.org/10.1016/0042-207X(90)93819-5
Publication status	Published - 1990
Externally published	Yes

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title = "A comparative study of the adsorption of CH2Cl2, CH3I and CH2I2 on GaAs(100) surfaces at 300 K",

abstract = "It is demonstrated that CH2Cl2, CH3l and CH2l2 adsorb on a clean As-rich GaAs(100) substrate surface at 300 K. The reactivity of these species towards the GaAs(100) surface follows the order CH2Cl2 < CH3l < CH2l2 with the l-containing species producing marked As-depletion. The implications of these data for the design of laser-assisted, selective-area etching processes are discussed.",

author = "Francis, \{S. M.\} and Goulding, \{P. A.\} and Pemble, \{M. E.\}",

year = "1990",

doi = "10.1016/0042-207X(90)93819-5",

language = "English",

volume = "41",

pages = "909--911",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd",

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T1 - A comparative study of the adsorption of CH2Cl2, CH3I and CH2I2 on GaAs(100) surfaces at 300 K

AU - Francis, S. M.

AU - Goulding, P. A.

AU - Pemble, M. E.

PY - 1990

Y1 - 1990

N2 - It is demonstrated that CH2Cl2, CH3l and CH2l2 adsorb on a clean As-rich GaAs(100) substrate surface at 300 K. The reactivity of these species towards the GaAs(100) surface follows the order CH2Cl2 < CH3l < CH2l2 with the l-containing species producing marked As-depletion. The implications of these data for the design of laser-assisted, selective-area etching processes are discussed.

AB - It is demonstrated that CH2Cl2, CH3l and CH2l2 adsorb on a clean As-rich GaAs(100) substrate surface at 300 K. The reactivity of these species towards the GaAs(100) surface follows the order CH2Cl2 < CH3l < CH2l2 with the l-containing species producing marked As-depletion. The implications of these data for the design of laser-assisted, selective-area etching processes are discussed.

UR - https://www.scopus.com/pages/publications/0025550364

U2 - 10.1016/0042-207X(90)93819-5

DO - 10.1016/0042-207X(90)93819-5

M3 - Article

AN - SCOPUS:0025550364

SN - 0042-207X

VL - 41

SP - 909

EP - 911

JO - Vacuum

JF - Vacuum

IS - 4-6

ER -

A comparative study of the adsorption of CH₂Cl₂, CH₃I and CH₂I₂ on GaAs(100) surfaces at 300 K

Abstract

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