A comprehensive study of bistable gated bipolar device

Xu Cheng; Russell Duane

doi:10.1109/TED.2006.882391

A comprehensive study of bistable gated bipolar device

Xu Cheng
, Russell Duane

Tyndall IPES (Integrated Power)

Research output: Contribution to journal › Article › peer-review

Abstract

Bistable gated bipolar (BGB) devices, a novel negative differential resistance (NDR) device, is investigated in this paper. Experimental demonstration for both n-channel and p-channel devices is carried out in a partially depleted silicon-on-insulator technology. The temperature dependence of its NDR characteristics is measured and found to be in good agreement with analytical models. A feasible scheme is proposed to implement this device in scaled CMOS technologies. As the basic principle for applications, the measured hysteresis characteristic of a storage cell utilizing the BGB device is reported for the first time. Potential applications for logic and memory are also discussed.

Original language	English
Pages (from-to)	2589-2597
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	10
DOIs	https://doi.org/10.1109/TED.2006.882391
Publication status	Published - 2006

Keywords

MOS devices
Negative resistance devices

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10.1109/TED.2006.882391

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abstract = "Bistable gated bipolar (BGB) devices, a novel negative differential resistance (NDR) device, is investigated in this paper. Experimental demonstration for both n-channel and p-channel devices is carried out in a partially depleted silicon-on-insulator technology. The temperature dependence of its NDR characteristics is measured and found to be in good agreement with analytical models. A feasible scheme is proposed to implement this device in scaled CMOS technologies. As the basic principle for applications, the measured hysteresis characteristic of a storage cell utilizing the BGB device is reported for the first time. Potential applications for logic and memory are also discussed.",

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AU - Duane, Russell

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AB - Bistable gated bipolar (BGB) devices, a novel negative differential resistance (NDR) device, is investigated in this paper. Experimental demonstration for both n-channel and p-channel devices is carried out in a partially depleted silicon-on-insulator technology. The temperature dependence of its NDR characteristics is measured and found to be in good agreement with analytical models. A feasible scheme is proposed to implement this device in scaled CMOS technologies. As the basic principle for applications, the measured hysteresis characteristic of a storage cell utilizing the BGB device is reported for the first time. Potential applications for logic and memory are also discussed.

KW - MOS devices

KW - Negative resistance devices

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DO - 10.1109/TED.2006.882391

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

A comprehensive study of bistable gated bipolar device

Abstract

Keywords

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